2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L −π−MOSV) 2SK2614 Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 ± 0.15 Absolute Maximum Ratings (Ta = 25°C) Rating Unit Drain-source voltage VDSS 50 V Drain-gate voltage (RGS = 20 kΩ) VDGR 50 V Gate-source voltage VGSS ±20 V (Note 1) ID 20 A Pulse (Note 1) IDP 50 A Drain power dissipation (Tc = 25°C) PD 40 W Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current DC 1.1 ± 0.2 Symbol 1 Max Unit Thermal resistance, channel to case Rth (ch−c) 3.125 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W This transistor is an electrostatic-sensitive device. Handle with care. 2 1 3 JEDEC ― JEITA SC-64 TOSHIBA 2-7B5B Weight: 0.36 g (typ.) 6.8 MAX. 5.5 ± 0.2 5.2 ± 0.2 0.6 ± 0.15 0.95 MAX. 0.6 MAX. 0.6 ± 0.15 0.6 MAX. 2.3 2.3 1 2 2.3 Symbol 3 GATE DRAIN （HEAT SINK） 3. SOURSE Thermal Characteristics Characteristic 2 1. 2. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.6 MAX. 2.3 1.7 ± 0.2 Characteristic 2.3 1.5 ± 0.2 : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) 2.5 MAX. z Enhancement mode 12.0 MIN. 0.95 MAX. 9.6 ± 0.3 : |Yfs| = 13 S (typ.) : IDSS = 100 μA (max) (VDS = 50 V) 2.5 MAX. z High forward transfer admittance z Low leakage current 3 2.3 1.1 ± 0.2 : RDS (ON) = 0.032 Ω (typ.) 0.1 ± 0.1 z Low drain-source ON-resistance 5.5 ± 0.2 z 4-V gate drive 0.6 MAX. 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE 3 JEDEC ― JEITA ― TOSHIBA 2 1 2-7B7B Weight: 0.36 g (typ.) 1 2009-12-21 2SK2614 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = 50 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 5 A — 0.055 0.08 VGS = 10 V, ID = 10 A — 0.032 0.046 VDS = 10 V, ID = 10 A 7 13 — — 900 — — 130 — — 370 — — 15 — — 25 — — 30 — — 100 — — 25 — — 19 — — 6 — Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ID = 10 A 10 V ton Switching time Fall time tf VGS 0V 4.7 Ω Turn-on time Ω S pF VOUT RL = 3 Ω Drain-source breakdown voltage ns VDD ≈ 30 V Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“Miller”) charge Qgd Duty ≤ 1%, tw = 10 μs VDD ≈ 40 V, VGS = 10 V, ID = 20 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 20 A Pulse drain reverse current (Note 1) IDRP — — — 50 A Forward voltage (diode) VDSF — — −1.7 V Reverse recovery time trr — 60 — ns Reverse recovery charge Qrr — 45 — μC IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / μs Marking Note 3 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K2614 Part No. (or abbreviation code) Lot No. Note 3 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SK2614 ID – VDS Common source Tc = 25°C Pulse test 16 8 6 10 5 10 40 4 15 ID (A) ID ID – VDS 50 Common source Tc = 25°C Pulse test 6 8 15 5 (A) 20 12 30 4.5 Drain current Drain current 3.5 8 VGS = 3 V 4 4 20 3.5 10 VGS = 3 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 0 1.0 (V) 2 4 6 Drain-source voltage 8 VDS 2.0 Common source Tc = 25°C Pulse test Common source 25 Tc = −55°C 100 20 10 0 0 4 2 6 Gate-source voltage 1.6 VDS Pulse test Drain-source voltage ID (A) Drain current (V) VDS = 10 V 30 8 VGS 1.2 12 0.4 6 0 0 10 ID = 25 A 0.8 (V) 4 8 Common source Drain-source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) Tc = −55°C 25 100 10 5 3 3 VGS 20 (V) Common source Tc = 25°C 0.5 Pulse test 30 1 1 16 RDS (ON) – ID 1 VDS = 10 V 50 12 Gate-source voltage |Yfs| – ID 100 (V) VDS – VGS ID – VGS 50 40 10 5 10 30 50 0.3 0.1 Drain current ID (A) VGS = 4 V 10 0.05 0.03 0.01 1 100 Pulse test 3 5 10 30 50 100 Drain current ID (A) 3 2009-12-21 2SK2614 RDS (ON) – Tc 0.20 IDR – VDS 100 Common source Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (Ω) Pulse test 0.16 0.12 ID = 12 A 6 0.08 ID = 25 A VGS = 4 V 6 0.04 12 50 Common source Tc = 25°C Pulse test 30 10 5 10 3 5 1 3 VGS = 0, −1 V VGS = 10 V 0 −80 −40 0 40 80 120 1 0 160 −0.2 Case temperature Tc (°C) −0.4 −0.6 −0.8 −1.0 Drain-source voltage Capacitance – VDS −1.2 VDS −1.4 −1.6 (V) Vth – Tc 5000 2.0 3000 Gate threshold voltage Vth (V) 300 Coss 100 Crss 50 Common source V =0V 30 GS f = 1 MHz 1.2 0.8 0.4 Ta = 25°C 10 0.1 0.3 1 3 10 Drain-source voltage 30 0 −80 100 Common source VDS = 10 V ID = 1 mA Pulse test −40 VDS (V) 0 (V) Drain-source voltage 30 20 10 80 120 160 50 20 40 16 VDS 40 40 120 Dynamic input / output characteristics 50 0 0 80 Case temperature Tc (°C) PD – Tc Drain power dissipation PD (W) 40 160 30 Case temperature Tc (°C) 12 10 Common source ID = 20 A VGS 20 VDD = 40 V Ta = 25°C 8 Pulse test 10 0 0 200 20 VDS 4 10 20 30 40 VGS (V) Capacitance C 500 Gate-source voltage (pF) 1.6 Ciss 1000 0 50 Total gate charge Qg (nC) 4 2009-12-21 Normalized transient thermal impedance rth (t)/Rth (ch-a) 2SK2614 SINGLE PULSE Pulse width tw (s) SAFE OPERATING AREA 300 Drain current ID (A) 100 50 ID max (pulse)* 100 μs* 30 ID max (continuous) 1 ms* 10 5 3 1 0.5 0.3 DC OPERATION Ta =25°C * Single pulse Tc=25°C Curves must be derated linearly with increase in temperature. 0.1 0.3 1 3 VDSS max 10 Drain-source voltage 30 100 300 VDS (V) 5 2009-12-21 2SK2614 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-12-21