Transistors with built-in Resistor UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 For amplification of the low frequency 1.5 ■ Absolute Maximum Ratings Parameter Ratings UN1231 20 VCBO UN1231A 3 UN1231 Collector to emitter voltage UN1231A 20 VCEO 1.0 2 2.5 1:Base 2:Collector 3:Emitter M Type Mold Package V 50 IC 0.7 A Peak collector current ICP 1.5 A Total power dissipation PT* 1.0 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. Parameter 1 Unit Collector current ■ Electrical Characteristics 0.45±0.05 V 60 4.5±0.1 0.55±0.1 2.5 Collector to base voltage 4.1±0.2 0.85 (Ta=25˚C) Symbol 2.4±0.2 2.0±0.2 R 0. 7 3.5±0.1 R0.9 1.25±0.05 ● High forward current transfer ratio hFE. M type mold package. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1.0 1.5 R0.9 0.4 ● 1.0±0.1 ■ Features ● 2.5±0.1 Internal Connection C R1(1kΩ) B R2 (47kΩ) E (Ta=25˚C) Symbol Conditions min typ max Unit 1 µA ICBO VCB = 15V, IE = 0 ICEO VCE = 15V, IB = 0 10 µA IEBO VEB = 14V, IC = 0 0.5 mA VCBO IC = 10µA, IE = 0 VCEO IC = 1mA, IB = 0 Forward current transfer ratio hFE VCE = 10V, IC = 150mA* Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 5mA* Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage UN1231 UN1231A UN1231 UN1231A Input resistance R1 Resistance ratio R1/R2 20 V 60 20 V 50 800 0.7 2100 1 0.4 V 1.3 kΩ 0.021 *Pulse measurement 1 Transistors with built-in Resistor UN1231/1231A PT — Ta IC — VCE 1.4 1.0 1.2 1.0 0.8 0.6 0.4 IB=1.2mA 1.0mA 0.8mA 0.8 0.6mA 0.6 0.4mA 0.4 0.2mA 0.2 0.2 0 40 80 120 0 160 0 Ambient temperature Ta (˚C) 2 6 8 10 12 hFE — IC Cob — VCB 30 Collector output capacitance Cob (pF) VCE=10V 2000 1600 Ta=75˚C 25˚C 1200 –25˚C 800 400 0 0.01 0.03 0.1 0.3 1 Collector current IC 3 (A) 10 25 20 15 10 5 0 0.1 0.3 1 3 10 Collector to base voltage 30 IC/IB=100 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector to emitter voltage VCE (V) 2400 Forward current transfer ratio hFE 4 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 100 1.2 Collector current IC (A) Total power dissipation PT (W) 1.6 100 VCB (V) 10