ROHM MP6Z1

Medium Power Transistor (-32V, -1A)
MP6Z1
Dimensions (Unit : mm)
Applications
Low frequency amplifier
MPT6
Features
1) Low VCE(sat)
VCE(sat) = -0.2V(Typ.)
(IC / IB = -500mA / -50mA)
2) Contains 2SD1664-die and 2SB1132-die
in a package.
(6)
(5)
(4)
(1)
(2)
(3)
Structure
Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Inner circuit
Taping
Code
(6)
(5)
(4)
Basic ordering unit(pieces)
(1) Emitter <Tr1>
(2) Base <Tr1>
(3) Collector <Tr2>
(4) Emitter <Tr2>
TR
1000
<Tr2>
<Tr1>
MP6Z1
(1)
(2)
(5) Base <Tr2>
(6) Collector <Tr1>
(3)
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Continuous
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
∗1
PD
∗2
Tj
Tstg
Limits
Tr1
40
32
5
Tr2
−40
−32
−5
1.0
2.0
−1.0
−2.0
2.0
1.4
150
−55 to 150
Unit
V
V
V
A
A
W / TOTAL
W / ELEMENT
°C
°C
∗1 Pw=10ms 1Pulse
∗2 Mounted on a ceramic board
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c 2010 ROHM Co., Ltd. All rights reserved.
○
1/6
2010.01 - Rev.B
MP6Z1
Data Sheet
Electrical characteristics (Ta=25C)
<Tr1>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
Parameter
BVCEO
32
−
−
V
IC=1mA
Collector-base breakdown voltage
BVCBO
40
−
−
V
IC=50μA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50μA
ICBO
−
−
500
nA
VCB=20V
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Conditions
IEBO
−
−
500
nA
VEB=4V
VCE(sat)∗
−
−
400
mV
IC=500mA, IB=50mA
hFE
120
−
390
−
−
150
−
MHz
Cob
−
15
−
pF
fT
∗
VCE=3V, IC=100mA
VCE=5V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
∗ Pulsed
<Tr2>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
−32
−
−
V
IC= −1mA
Collector-base breakdown voltage
BVCBO
−40
−
−
V
IC= −50μA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50μA
ICBO
−
−
−500
nA
VCB= −20V
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Conditions
IEBO
−
−
−500
nA
VEB= −4V
VCE(sat)∗
−
−
−500
mV
IC= −500A, IB= −50mA
hFE
120
−
390
−
VCE= −3V, IC= −100mA
−
150
−
MHz
−
20
−
pF
fT
Cob
∗
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
∗ Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
○
2/6
2010.01 - Rev.B
MP6Z1
Data Sheet
Electrical characteristics curves
<Tr1>
Ta=100°C
100
50
25°C
−55°C
20
10
5
400
4.5mA
2.0mA
1.5mA
300
1.0mA
200
0.5mA
100
Ta=25°C
1000
500
200
VCE=3V
1V
100
0
500
200
Ta=100°C
25°C
−55°C
100
50
2
5
10 20
50 100 200 500 1000
0.5
0.2
0.1
IC/IB=50
0.05
20
10
0.02
0.01
1
200
100
50
-10
-20
-50
-100
EMITTER CURRENT : IE(mA)
Fig.7
Gain bandwidth product vs.
emitter current
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c 2010 ROHM Co., Ltd. All rights reserved.
○
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.5
Ta=25°C
VCE=5V
-5
2
2
5
10 20
50 100 200
5001000
Collector-emitter saturation
voltage vs. collector current ( Ι )
Ta=25°C
f=1MHz
IE=0A
50
20
10
0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8
Collector output capacitance
vs. collector-base voltage
3/6
10 20
50 100 200
500 1000
Fig.3
DC current gain vs. collector
current ( Ι )
lC/lB=10
0.5
0.2
0.1
0.05
Ta=100°C
25°C
−40°C
0.02
0.01
1
2
5 10
20
50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
100
5
5
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (ΙΙ)
-2
1
Grounded emitter output
characteristics
Ta=25°C
COLLECTOR CURRENT : IC (mA)
20
-1
1.2
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
VCE=3V
1000
1
Fig.2
Grounded emitter propagation
characteristics
2000
0.8
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Fig.1
0.4
50
IB=0A
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE(V)
DC CURRENT GAIN : hFE
3.0mA
3.5mA
4.0mA
2000
2
1
0
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C
DC CURRENT GAIN : hFE
200
2.5mA
Fig.6
NORMALIZED TRANSIENT THERMAL
RESISTANCE : r(t)
COLLECTOR CURRENT : IC (mA)
VCE=6V
COLLECTOR CURRENT : IC (mA)
500
500
Collector-emitter saturation
voltage vs. collector current (ΙΙ)
10
Ta=25℃
1
0.1
0.01
0.001
0.1
10
1000
PULSE W IDTH : Pw(s)
Fig.9
Normalized thermal resistance (Element)
2010.01 - Rev.B
MP6Z1
Data Sheet
COLLECTOR CURRENT : IC (A)
10
10ms
1ms
1
100ms
DC
0.1
0.01
0.1
Ta=25
TR1
SIngle Pulse
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
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c 2010 ROHM Co., Ltd. All rights reserved.
○
4/6
2010.01 - Rev.B
MP6Z1
Data Sheet
Electrical characteristics curves
<Tr2>
-50
Ta=100 C
25 C
−55 C
-20
-10
-5
1000
−2.0
−1.5
−300
−1.0
−200
−0.5
−100
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
−0.4
−0.8
−1.2
500
VCE= −3V
−1V
200
100
50
IB=0mA
−1.6
−2.0
−1
−2
−5 −10 −20
−50 −100 −200 −500 −1000
Fig.1 Grounded emitter
propagation characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current(Ι)
1000
500
Ta=100 C
25 C
200
−55 C
100
50
−2
−5 −10 −20
−50 −100 −200 −500−1000
−0.2
−0.1
−0.05
−0.02
−0.01
−1 −2
−5 −10 −20
−1.0
Ta=25 C
−0.8
−0.6
lC= −500mA
−0.4
−0.2
lC= −300mA
0
−1
−50 −100 −200 −500 −1000 −2000
−2
−5
−10
−20
−50 −100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
BASE CURRENT : IB (mA)
Fig.4 DC current gain vs.
collector current(ΙΙ)
Fig.5 Collector-emitter saturation
voltage vs. collector current
Fig.6 Collector-emitter saturation
voltage vs. base current
Ta=25 C
VCE= −5V
200
100
50
20
−1
−0.5
Ta=25 C
IC/IB=10
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product
vs. emitter current
100
Ta=25 C
f=1MHz
IE=0A
50
20
10
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
NORMALIZED TRANSIENT THERMAL
RESISTANCE : r(t)
−1
−1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat )(V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
VCE= −3V
DC CURRENT GAIN : hFE
Ta=25 C
Ta=25 C
−2.5
-2
-1
0
TRANSITION FREQUENCY : fT (MHz)
−3.0
−3.5
−4.0
−400 −4.5
−5.0
DC CURRENT GAIN : hFE
-200
-100
−500
COLLECTOR CURRENT : IC (mA)
VCE= −6V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR CURRENT : IC (mA)
-500
10
Ta=25℃
1
0.1
0.01
0.001
Fig.9
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c 2010 ROHM Co., Ltd. All rights reserved.
○
5/6
0.1
10
1000
PULSE W IDTH : Pw(s)
Fig.8 Collector output capacitance
vs.collector-base voltage
Normalized thermal resistance (Element)
2010.01 - Rev.B
MP6Z1
Data Sheet
COLLECTOR CURRENT : IC (-A)
10
10ms
1ms
1
100ms
DC
0.1
0.01
0.1
Ta=25
SIngle Pulse
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.10 Safe operating area
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c 2010 ROHM Co., Ltd. All rights reserved.
○
6/6
2010.01 - Rev.B
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R1010A