Power-SPMTM FD6M045N06 tm 60V/60A Synchronous Rectifier Module General Features General Description The FD6M045N06 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS(ON) MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise. • Very High Rectification Efficiency at Output 12V • Integrated Solution for Saving Board Space • RoHS Compliant MOSFET Features Applications • VDSS = 60V • High Current Isolated Converter • QG(TOTAL) = 66nC(Typ.), VGS = 10V • Distributed Power Architectures • RDS(ON) = 3.6mΩ(Typ.), VGS = 10V, ID = 40A • Synchronous Rectification • Low Miller Charge • DC/DC Converter • Low Qrr Body Diode • Battery Supplied Application • UIS Capability (Single Pulse and Repetitive Pulse) • ORing MOSFET • Fully Isolated Package 1 15 EPM15 Package Block Diagram 10 9 G2 D2 15 8 Q2 14 G1 6 13 S2 12 7 11 Q1 S1 D1 1 2 3 4 5 Figure 1. FD6M045N06 Module Block Diagram ©2008 Fairchild Semiconductor Corporation FD6M045N06 Rev. A1 1 www.fairchildsemi.com FD6M045N06 60V/60A Synchronous Rectifier Module March 2008 FD6M045N06 60V/60A Synchronous Rectifier Module Pin Configuration and Pin Description Top View D1 S1 G1 NC NC G2 S2 D2 NC Figure 2. Pinmap of FD6M045N06 Pin Number Pin Name Pin Description 1 D1 Drain of Q1, MOSFET 2~5 S1 Source of Q1, MOSFET 6 G1 Gate of Q1, MOSFET 7 NC No Connection 8 NC No Connection 9 NC No Connection 10 G2 Gate of Q2, MOSFET 11 ~ 14 S2 Source of Q2, MOSFET 15 D2 Drain of Q2, MOSFET Absolute Maximum Ratings TC = 25°C, Symbol Unless Otherwise Specified Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current, Continuous (VGS = 10V) EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Temperature Range Rating Unit 60 V ±20 V (Note1) 60 A 794 mJ -40 ~ 150 °C (Note1) (Note1,2) Thermal Resistance Symbol RθJC Parameter Junction to Case Thermal Resistance (Note1) Min. Typ. Max. Unit - - 3.9 °C/W Note: 1. Each MOSFET Switch 2. Starting TJ = 25°C, VD = 40V, L = 0.25mH, IAS = 46A FD6M045N06 Rev. A1 2 www.fairchildsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Synchronous Rectifier Switch Part (Each Switch) BVDSS Drain to Source Breakdown Voltage ID= 250μA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 48V - - 1 μA IGSS Gate to Source Leakage Current VGS = ±20V VGS(TH) Gate Threshold Voltage VD = 20V, IDS = 250μA RDS(ON) Drain to Source On Resistance ID = 40A, VGS = 10V TJ = 150°C - - ±100 nA 2.0 - 4.0 V - 3.55 4.5 - 6.7 - - 3890 - pF - 755 - pF - 270 - pF mΩ Dynamic Charateristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 66 87 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 7 10 nC Qgs Gate to Source Gate Charge - 18 - nC Qgs2 Gate Charge Threshold to Plateau - 11 - nC Qgd Gate to Drain “MIller” Charge - 20 - nC VDS = 25V, VGS = 0V f = 1MHz VDD = 40V ID = 40A Ig = 1.0mA Switching Charateristics (VGS = 10V) tON Turn-On Time - - 60 ns td(on) Turn-On Delay Time - 18 - ns tr Rise Time - 19 - ns td(off) Turn-Off Delay Time - 35 - ns tf Fall Time - 23 - ns tOFF Turn-Off Time - - 100 ns ISD = 80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.0 ID = 40A VGS = 10V, VDD = 40V, RG = 5Ω Drain-Source Diode Charateristics VSD Source to Drain Diode Voltage V trr Reverse Recovery Time ISD = 40A, dISD/dt = 100A/μs - 33 - ns Qrr Reverse Recovery Charge ISD = 40A, dISD/dt = 100A/μs - 34 - nC FD6M045N06 Rev. A1 3 www.fairchildsemi.com FD6M045N06 60V/60A Synchronous Rectifier Module Electrical Characteristics TC = 25°C, Unless Otherwise Specified FD6M045N06 60V/60A Synchronous Rectifier Module Typical Performance Characteristics Each Switch, Unless Otherwise Specified Figure 3. On-Region Characteristics 120 VGS 10.0 V 8.0 V 7.0 V 6.0 V Bottom : 5.0 V ID, Drain Current[A] Top : 80 ID VDS D VGS G 40 VGS,STEP *Notes : 1. 250μs Pulse Test o 2. TC = 25 C 0 0.0 0.5 1.0 VDS FD6M045N06 S 1.5 VDS, Drain-Source Voltage[V] Figure 4. Transfer Characteristics 160 ID VDS ID, Drain Current[A] 120 D VGS G VDS VGS o 150 C 80 o 25 C o -40 C 40 *Notes : 1. VDS = 15V 2. 250μs Pulse Test FD6M045N06 S 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VGS, Input Voltage[V] Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Output Capacitance Characteristics 8 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6 o 150 C Capacitance [nF] IS, Reverse Drain Current [A] 100 o 25 C 10 *Notes : 1. VGS = 0V 2. 250μs Pulse Test 0.6 0.8 Coss * Notes : 1. VGS = 0 V 2. f = 1 MHz 2 0 0.1 1.0 VSD, Body Diode Forward Voltage [V] FD6M045N06 Rev. A1 4 Crss 1 0.4 Ciss 1 10 60 VDS, Drain-Source Voltage [V] 4 www.fairchildsemi.com Figure 8. On-Resistance Variation vs. Temperature 1.20 2.5 * Notes: 1. VGS = 0V 2. ID = 250μA 1.10 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.00 0.90 0.85 -50 0 50 100 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 40 A 0.5 0.0 200 -50 TJ, Junction Temperature [°C] 0 50 100 150 TJ, Junction Temperature [°C] 200 Figure 9. Transient Thermal Response Curve Thermal Response [ZθJC] 10 0.5 1 0.2 0.1 0.05 0.1 PDM 0.02 t1 0.01 t2 *Notes: o 0.01 1. ZθJC(t) = 3.9 C/W Typ. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 -4 10 -3 10 -2 -1 10 0 10 1 10 2 10 10 Rectangular Pulse Duration [sec] Figure 10. Maximum Safe Operating Area Figure 11. Unclamped Inductive Switching Capability 200 100 400 IAS, Avalanche Current [A] ID, Drain Current [A] 1ms 100μs 100 10ms 10 DC Operation in This Area is Limited by R DS(on) 1 * Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.1 0.1 FD6M045N06 Rev. A1 1 10 VDS, Drain-Source Voltage [V] o Starting TJ = 25 C 10 o Starting TJ = 125 C 1 0.01 100 If R = 0 tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD) If R ? 0 tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1] 0.1 1 10 100 1000 tAV, Time In Avalanche [ms] 5 www.fairchildsemi.com FD6M045N06 60V/60A Synchronous Rectifier Module Typical Performance Characteristics (Continued) IAS tp VDS D VDS IAS L VGS VDD VGS G VDD tp FD6M045N06 S 0 tAV Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms VDS D RL VGS G RG VDD FD6M045N06 PULSE S Figure 13. Switching Test Circuit tON tOFF td(ON) td(OFF) tr tf 90% 90% VDS 10% 10% 90% VGS 10% 50% 50% PULSE WIDTH Figure 14. Switching Test Waveforms FD6M045N06 Rev. A1 6 www.fairchildsemi.com FD6M045N06 60V/60A Synchronous Rectifier Module AC Test Circuits and Waveforms VIN VOUT 9 10 15 G2 D2 8 Q2 6 14 G1 13 7 S2 12 PWM Controller Q1 11 S1 D1 1 2 3 4 5 OPTO Feedback Figure 3. Application Circuit of Forward Converter with FD6M045N06 LF VIN 9 10 VOUT 15 G2 D2 CF Q1 8 Q2 CR 6 14 G1 VOUT_FB 13 7 FOD817 S2 12 Q1 Q2 KA431 11 S1 D1 1 2 3 4 5 LF Figure 4. Application Circuit of Asymmetrical HB Converter with FD6M045N06 LF VIN Q1 Q3 9 10 VOUT 15 G2 D2 CF 8 Q2 6 14 G1 13 7 FOD817 S2 12 Q2 VOUT_FB Q1 Q4 KA431 11 S1 D1 1 2 3 4 5 LF Figure 5. Application Circuit of Full Bridge Converter with FD6M045N06 FD6M045N06 Rev. A1 7 www.fairchildsemi.com FD6M045N06 60V/60A Synchronous Rectifier Module Application circuits 26.20 25.80 2.70 2.30 23.10 22.90 (0.50) (R0.50) 5.35 5.15 10.70 10.30 (12.00) 14.50 13.50 18.50 17.50 (1.50) (R0.55) (0.77) (R0.55) 0.70 0.30 MAX 3.07 MAX 0.80 2.97 2.77 0.70 0.50 (6.00) 0.60 0.40 3.48 2.88 1.27 22.86 (R0.50) 2.70 2.30 Figure 6. EPM15 Package Dimensions in Millimeters FD6M045N06 Rev. A1 8 www.fairchildsemi.com FD6M045N06 60V/60A Synchronous Rectifier Module Detailed Package Outline Drawings The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 FD6M045N06 Rev. A1 9 www.fairchildsemi.com FD6M045N06 60V/60A Synchronous Rectifier Module TRADEMARKS