FAIRCHILD FD6M033N06

Power-SPMTM
FD6M033N06
tm
60V/73A Synchronous Rectifier Module
General Features
General Description
The FD6M033N06 is one product in the Power-SPMTM family
that Fairchild has newly developed and designed to be most
suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and
telecom system power supplies. For higher efficiency, it includes
built-in very low RDS(ON) MOSFETs. This Power-SPM device
can be used in the secondary side of the PWM transformer of
forward/bridge converter to provide high current rectification at
output voltages ranging from 12 Volts down to 5 Volts. With this
product, it is possible to design the secondary side of power
supply systems with reduced parasitic elements resulting in
minimized voltage spike and EMI noise.
• Very High Rectification Efficiency at Output 12V
• Integrated Solution for Saving Board Space
• RoHS Compliant
MOSFET Features
Applications
• VDSS = 60V
• High Current Isolated Converter
• QG(TOTAL) = 99nC(Typ.), VGS = 10V
• Distributed Power Architectures
• RDS(ON) = 2.6mΩ(Typ.), VGS = 10V, ID = 40A
• Synchronous Rectification
• Low Miller Charge
• DC/DC Converter
• Low Qrr Body Diode
• Battery Supplied Application
• UIS Capability (Single Pulse and Repetitive Pulse)
• ORing MOSFET
• Fully Isolated Package
1
15
EPM15 Package
Block Diagram
10
9
G2
D2
15
8
Q2
14
G1
6
13
S2
12
7
11
Q1
S1
D1
1
2
3
4
5
Figure 1. FD6M033N06 Module Block Diagram
©2008 Fairchild Semiconductor Corporation
FD6M033N06 Rev. A
1
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FD6M033N06 60V/73A Synchronous Rectifier Module
March 2008
FD6M033N06 60V/73A Synchronous Rectifier Module
Pin Configuration and Pin Description
Top View
D1
S1
G1
NC
NC
G2
S2
D2
NC
Figure 2. Pinmap of FD6M033N06
Pin Number
Pin Name
Pin Description
1
D1
Drain of Q1, MOSFET
2~5
S1
Source of Q1, MOSFET
6
G1
Gate of Q1, MOSFET
7
NC
No Connection
8
NC
No Connection
9
NC
No Connection
10
G2
Gate of Q2, MOSFET
11 ~ 14
S2
Source of Q2, MOSFET
15
D2
Drain of Q2, MOSFET
Absolute Maximum Ratings TC = 25°C,
Symbol
Unless Otherwise Specified
Parameter
Rating
Unit
60
V
Gate to Source Voltage
±20
V
Drain Current, Continuous (VGS = 10V)
(Note1)
73
A
EAS
Single Pulse Avalanche Energy
(Note1,2)
924
mJ
TJ, TSTG
Operating and Storage Temperature Range
-40 ~ 150
°C
VDS
Drain to Source Voltage
VGS
ID
(Note1)
Thermal Resistance
Symbol
RθJC
Parameter
Junction to Case Thermal Resistance
(Note1)
Min.
Typ.
Max.
Unit
-
-
3.9
°C/W
Note:
1. Each MOSFET Switch
2. Starting TJ = 25°C, VD = 40V, L = 0.2mH, IAS = 55.5A
FD6M033N06 Rev. A
2
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Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Synchronous Rectifier Switch Part (Each Switch)
BVDSS
Drain to Source Breakdown Voltage
ID= 250μA, VGS = 0V
60
-
-
V
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS = 48V
-
-
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(TH)
Gate Threshold Voltage
VD = 20V, IDS = 250μA
2.0
-
4.0
V
RDS(ON)
Drain to Source On Resistance
ID = 40A, VGS = 10V
-
2.6
3.3
-
4.88
-
-
6010
-
pF
-
1145
-
pF
-
365
-
pF
TJ = 150°C
mΩ
Dynamic Charateristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
-
99
129
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
-
11
14
nC
Qgs
Gate to Source Gate Charge
VDD = 40V
-
27
-
nC
Qgs2
Gate Charge Threshold to Plateau
ID = 40A
-
16
-
nC
Qgd
Gate to Drain “MIller” Charge
Ig = 1.0mA
-
28
-
nC
VDS = 25V, VGS = 0V,
f = 1MHz
Switching Charateristics (VGS = 10V)
tON
Turn-On Time
-
-
90
ns
td(on)
Turn-On Delay Time
-
23
-
ns
tr
Rise Time
-
27
-
ns
td(off)
Turn-Off Delay Time
-
52
-
ns
tf
Fall Time
-
33
-
ns
tOFF
Turn-Off Time
-
-
135
ns
ISD = 80A, VGS = 0V
-
-
1.25
ISD = 40A, VGS = 0V
-
-
1.0
ID = 40A
VGS = 10V, VDD = 40V, RG = 5Ω
Drain-Source Diode Charateristics
VSD
Source to Drain Diode Voltage
V
trr
Reverse Recovery Time
ISD = 40A, dISD/dt = 100A/μs
-
36
-
ns
Qrr
Reverse Recovery Charge
ISD = 40A, dISD/dt = 100A/μs
-
38
-
nC
FD6M033N06 Rev. A
3
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FD6M033N06 60V/73A Synchronous Rectifier Module
Electrical Characteristics TC = 25°C, Unless Otherwise Specified
FD6M033N06 60V/73A Synchronous Rectifier Module
Typical Performance Characteristics
Each Switch, Unless Otherwise Specified
Figure 3. On-Region Characteristics
120
VGS
10.0 V
7.0 V
6.0 V
Bottom : 5.0 V
ID, Drain Current[A]
Top :
80
VDS
ID
D
VGS
G
40
VGS,STEP
*Notes :
1. 250μs Pulse Test
o
2. TC = 25 C
0
0.0
0.5
1.0
VDS
FD6M033N06
S
1.5
VDS, Drain-Source Voltage[V]
Figure 4. Transfer Characteristics
160
VDS
120
ID, Drain Current[A]
ID
D
VGS
G
VDS
VGS
o
150 C
80
o
25 C
o
-40 C
40
*Notes :
1. VDS = 15V
2. 250μs Pulse Test
FD6M033N06
S
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS, Input Voltage[V]
Figure 5. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 6. Output Capacitance Characteristic
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
8
o
150 C
Capacitance [nF]
IS, Reverse Drain Current [A]
100
o
25 C
10
*Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.6
0.8
1.0
0
0.1
1.2
VSD, Body Diode Forward Voltage [V]
FD6M033N06 Rev. A
4
Coss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
1
0.4
iss
Ciss
1
10
60
VDS, Drain-Source Voltage [V]
4
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Figure 8. On-Resistance Variation
vs. Temperature
1.20
2.5
* Notes:
1. VGS = 0V
2. ID = 250μA
1.10
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.00
0.90
0.85
-50
0
50
100
150
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 40 A
0.5
0.0
200
-50
TJ, Junction Temperature [°C]
0
50
100
150
TJ, Junction Temperature [°C]
200
Figure 9. Transient Thermal Response Curve
Thermal Response [ZθJC]
10
0.5
1
0.2
0.1
0.05
0.1
PDM
0.02
t1
0.01
t2
*Notes:
o
0.01
1. ZθJC(t) = 3.9 C/W Typ.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
-5
10
-4
10
-3
10
-2
-1
10
0
10
1
10
2
10
10
Rectangular Pulse Duration [sec]
Figure 10. Maximum Safe Operating Area
Figure 11. Unclamped Inductive Switching
Capability
300
400
100μs
IAS, Avalanche Current [A]
ID, Drain Current [A]
100
1ms
100
10ms
DC
10
Operation in This Area
is Limited by R DS(on)
1
* Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.1
0.1
FD6M033N06 Rev. A
1
10
VDS, Drain-Source Voltage [V]
o
Starting TJ = 25 C
10
o
Starting TJ = 125 C
1
0.01
100
If R = 0
tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD)
If R ? 0
tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1]
0.1
1
10
100
1000
tAV, Time In Avalanche [ms]
5
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FD6M033N06 60V/73A Synchronous Rectifier Module
Typical Performance Characteristics (Continued)
IAS
tp
VDS
D
VDS
IAS
L
VGS
VDD
VGS
G
VDD
tp
FD6M033N06
S
0
tAV
Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms
VDS
D
RL
VGS
R 13. G
Figure
Switching Test WaveformsVDD
G
FD6M033N06
PULSE
S
Figure 13. Switching Test Circuit
tON
tOFF
td(ON)
td(OFF)
tr
tf
90%
90%
VDS
10%
10%
90%
VGS
10%
50%
50%
PULSE WIDTH
Figure 14. Switching Test Waveforms
FD6M033N06 Rev. A
6
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FD6M033N06 60V/73A Synchronous Rectifier Module
AC Test Circuits and Waveforms
VIN
VOUT
9
10
15
G2
D2
8
Q2
6
14
G1
13
7
S2
12
PWM
Controller
Q1
11
S1
D1
1
2
3
4
5
OPTO
Feedback
Figure 15. Application Circuit of Forward Converter with FD6M033N06
LF
VIN
9
10
VOUT
15
G2
D2
CF
Q1
8
Q2
CR
6
14
G1
VOUT_FB
13
7
FOD817
S2
12
Q1
Q2
KA431
11
S1
D1
1
2
3
4
5
LF
Figure 16. Application Circuit of Asymmetrical HB Converter with FD6M033N06
LF
VIN
Q1
Q3
9
10
VOUT
15
G2
D2
CF
8
Q2
6
14
G1
13
7
FOD817
S2
12
Q2
VOUT_FB
Q1
Q4
KA431
11
S1
D1
1
2
3
4
5
LF
Figure 17. Application Circuit of Full Bridge Converter with FD6M033N06
FD6M033N06 Rev. A
7
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FD6M033N06 60V/73A Synchronous Rectifier Module
Application circuits
26.20
25.80
2.70
2.30
23.10
22.90
(0.50)
(R0.50)
5.35
5.15
10.70
10.30
(12.00)
14.50
13.50
18.50
17.50
(1.50)
(R0.55)
(0.77)
(R0.55)
0.70
0.30
MAX 3.07
MAX 0.80
2.97
2.77
0.70
0.50
(6.00)
0.60
0.40
3.48
2.88
1.27
22.86
(R0.50)
2.70
2.30
Figure 18. EPM15 Package
Dimensions in Millimeters
FD6M033N06 Rev. A
8
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FD6M033N06 60V/73A Synchronous Rectifier Module
Detailed Package Outline Drawings
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
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FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
®
PDP SPM™
Power-SPM™
PowerTrench®
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QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
SMART START™
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STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
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TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published
at a later date. Fairchild Semiconductor reserves the right to make changes at
any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
© 2008 Fairchild Semiconductor Corporation
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