FAIRCHILD FGK60N6S2D

FGK60N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
Features
The FGK60N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially designed for:
• 100kHz Operation at 390V, 52A
•
•
•
•
•
•
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC
• Low Gate Charge . . . . . . . . 140nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• Low Conduction Loss
IGBT formerly Developmental Type TA49346
Diode formerly Developmental Type TA49393
Package
Symbol
JEDEC STYLE STRETCH TO-247
E
C
C
G
G
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
75
A
IC110
Collector Current Continuous, TC = 110°C
75
A
Collector Current Pulsed (Note 1)
320
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
ICM
200A at 600V
EAS
Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V
700
PD
Power Dissipation Total TC = 25°C
625
W
5
W/°C
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
Power Dissipation Derating TC > 25°C
TJ
TSTG
mJ
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
June 2002
Device Marking
60N6S2D
Device
FGK60N6S2D
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCES
Collector to Emitter Breakdown Voltage
IC = 250µA, VGE = 0
ICES
Collector to Emitter Leakage Current
VCE = 600V
IGES
Gate to Emitter Leakage Current
VGE = ± 20V
TJ = 25°C
TJ = 125°C
600
-
-
V
-
-
250
µA
-
-
3
mA
-
-
±250
nA
On State Characteristics
VCE(SAT)
VEC
Collector to Emitter Saturation Voltage
Diode Forward Voltage
IC = 40A,
VGE = 15V
TJ = 25°C
-
1.9
2.5
V
TJ = 125°C
-
1.65
2.2
V
-
2.1
2.6
V
VGE = 15V
-
140
175
nC
VGE = 20V
-
180
228
nC
IEC = 40A
Dynamic Characteristics
QG(ON)
VGE(TH)
VGEP
Gate Charge
IC = 40A,
VCE = 300V
Gate to Emitter Threshold Voltage
IC = 250µA, VCE = VGE
3.5
4.3
5.0
V
Gate to Emitter Plateau Voltage
IC = 40A, VCE = 300V
-
6.5
8.0
V
Switching Characteristics
SSOA
Switching SOA
TJ = 150°C, RG = 3Ω, VGE =
15V, L = 100µH, VCE = 600V
200
-
-
A
td(ON)I
Current Turn-On Delay Time
IGBT and Diode at TJ = 25°C,
ICE =40A,
VCE = 390V,
VGE = 15V,
RG =3Ω
L = 100µH
Test Circuit - Figure 26
-
18
-
ns
-
15
-
ns
-
70
-
ns
-
50
-
ns
-
400
-
µJ
-
490
-
µJ
-
310
450
µJ
-
27
-
ns
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
td(ON)I
Current Turn-On Delay Time
trI
td(OFF)I
tfI
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
EON1
Turn-On Energy (Note 2)
EON2
Turn-On Energy (Note 2)
EOFF
Turn-Off Energy (Note 3)
trr
Diode Reverse Recovery Time
IGBT and Diode at TJ = 125°C
ICE = 40A,
VCE = 390V,
VGE = 15V,
RG = 3Ω
L = 100µH
Test Circuit - Figure 26
-
32
-
ns
-
110
150
ns
-
77
90
ns
-
400
450
µJ
-
750
850
µJ
-
688
950
µJ
IEC =40A, dIEC/dt = 200A/µs
-
75
90
ns
IEC = 1A, dIEC/dt = 200A/µs
-
50
60
ns
-
-
0.2
°C/W
0.75
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
IGBT
Diode
NOTE:
2. Values
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss
of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ
as the IGBT. The diode type is specified in figure 26.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
Package Marking and Ordering Information
FGK60N6S2D
Typical Performance Curves
TJ = 150oC
150
125
100
PACKAGE LIMITED
75
50
25
225
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
0
100
TC , CASE TEMPERATURE (oC)
Figure 1. DC Collector Current vs Case
Temperature
400
500
VGE = 15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
50
VGE = 10V
(DUTY FACTOR = 50%)
RØJC = 0.2oC/W, SEE NOTES
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
TC = 75oC
500
100
50
30
10
1100
VCE = 390V, RG = 3Ω, TJ = 125oC
14
1000
12
900
ISC
10
800
8
700
6
600
tSC
4
500
2
400
300
0
30
5
700
600
16
TJ = 125oC, RG = 3Ω, L = 100µH, V CE = 390V
fMAX, OPERATING FREQUENCY (kHz)
300
Figure 2. Minimum Switching Safe Operating Area
1000
9
100
11
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
12
13
14
16
15
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
80
80
DUTY CYCLE < 0.5%, VGE = 10V
PULSE DURATION = 250µs
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
175
60
50
TJ = 125oC
40
30
20
TJ =
150oC
TJ = 25oC
10
0
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
70
60
50
40
TJ = 125oC
30
TJ = 25oC
20
TJ = 150oC
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGK60N6S2D Rev. A1
FGK60N6S2D
Typical Performance Curves (Continued)
4.0
2.00
RG = 3Ω, L = 100µH, VCE = 390V
3.5
EOFF TURN-OFF ENERGY LOSS (mJ)
EON2 , TURN-ON ENERGY LOSS (mJ)
RG = 3Ω, L = 100µH, VCE = 390V
TJ = 25oC, TJ = 125oC, VGE = 10V
3.0
2.5
2.0
1.5
1.0
0.5
1.75
1.50
1.25
1.00
TJ = 125oC, VGE = 10V, VGE = 15V
0.75
0.50
0.25
TJ = 25oC, VGE = 10V, VGE = 15V
TJ = 25oC, TJ = 125oC, VGE = 15V
0
0
10
20
30
40
50
60
0.0
80
70
0
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
30
40
50
60
70
80
90
RG = 3Ω, L = 100µH, VCE = 390V
30
RG = 3Ω, L = 100µH, VCE = 390V
80
28
70
26
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
20
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
32
TJ = 25oC, TJ = 125oC, VGE = 10V
24
22
20
18
60
50
TJ = 25oC, TJ = 125oC, VGE = 10V
40
30
20
16
TJ = 25oC, TJ = 125oC, VGE = 15V
14
10
12
0
10
20
30
40
50
60
70
TJ = 25oC, TJ = 125oC, VGE = 15V
0
80
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
120
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
90
RG = 3Ω, L = 100µH, VCE = 390V
RG = 3Ω, L = 100µH, VCE = 390V
100
70
VGE = 10V, VGE = 15V, TJ = 125oC
80
60
VGE = 10V, VGE = 15V, TJ =
25oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
80
TJ = 25oC, TJ = 125oC, VGE = 10V
60
50
40
TJ = 25oC, TJ = 125oC, VGE = 15V
40
30
20
0
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
©2002 Fairchild Semiconductor Corporation
20
0
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGK60N6S2D Rev. A1
FGK60N6S2D
Typical Performance Curves (Continued)
16
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
175
IG(REF) = 1mA, RL = 7.5Ω
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
150
125
100
TJ = 25oC
75
50
TJ = 125oC
25
14
12
10
VCE = 600V
VCE = 400V
8
6
VCE = 200V
4
2
TJ = -55oC
0
3.0
0
4.0
3.5
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
8.0
20
40
60
80
100
QG , GATE CHARGE (nC)
VGE, GATE TO EMITTER VOLTAGE (V)
5
RG = 3Ω, L = 100µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
4
ICE = 80A
3
2
ICE = 40A
1
ICE = 20A
0
25
50
75
100
125
100
TJ = 125oC, L = 100µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 80A
ICE = 40A
1
ICE = 20A
0.1
1
150
10
TC , CASE TEMPERATURE (oC)
1000
100
RG, GATE RESISTANCE (Ω)
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
10
2.8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
CIES
C, CAPACITANCE (nF)
140
Figure 14. Gate Charge
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
Figure 13. Transfer Characteristic
120
1
COES
0.1
CRES
0.01
0
20
40
60
80
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
Figure 17. Capacitance vs Collector to Emitter
Voltage
©2002 Fairchild Semiconductor Corporation
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
2.6
2.4
2.2
ICE = 60A
2.0
ICE = 40A
1.8
ICE = 20A
1.6
6
7
8
9
10
11
12
13
14
15
16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
FGK60N6S2D Rev. A1
FGK60N6S2D
Typical Performance Curves (Continued)
300
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
dIEC/dt = 200A/µs, VCE = 390V
trr, REVERSE RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
80
60
40
125oC
25oC
20
250
125oC trr
200
125oC tb
150
25oC ta, tb
100
0
28
36
50
0.5
1.0
1.5
2.0
2.5
4
3.0
8
12
VEC , FORWARD VOLTAGE (V)
24
32
40
Figure 20. Recovery Times vs Forward Current
Qrr , REVERSE RECOVERY CHARGE (µC)
IEC = 40A, VCE = 390V
200
125oC tb
150
25oC ta
125oC ta
50
0
200
20
2.00
250
100
16
IEC , FORWARD CURRENT (A)
Figure 19. Diode Forward Current vs Forward
Voltage Drop
ta, tb, REVERSE RECOVERY TIMES (ns)
25oC trr
0
0
25oC tb
300
400
500
600
700
800
900
1000
VCE = 390V
1.50
125oC, IEC = 20A
1.25
1.00
0.75
25oC, IEC = 40A
0.50
25oC, IEC = 20A
0.25
0
200
VCE = 390V, TJ = 125°C
3.5
IEC = 40A
2.5
2.0
IEC = 20A
1.0
0.5
0
200
300
400
500
600
700
800
900
1000
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
©2002 Fairchild Semiconductor Corporation
400
500
600
700
900
800
1000
Figure 22. Stored Charge vs Rate of Change of
Current
IRRM, MAX REVERSE RECOVERY CURRENT (A)
4.0
1.5
300
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
Figure 21. Recovery Times vs Rate of Change of
Current
3.0
125oC, IEC = 40A
1.75
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
S, REVERSE RECOVERY SOFTNESS FACTOR
125oC ta
40
VCE = 390V, TJ = 125°C
35
IEC = 40A
30
25
IEC = 20A
20
15
10
5
200
300
400
500
600
700
800
900
1000
dIEC/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
FGK60N6S2D Rev. A1
FGK60N6S2D
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves (Continued)
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 25. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGK60N6S2D
DIODE TA49393
90%
10%
VGE
EON2
EOFF
L = 100µH
VCE
RG = 3Ω
90%
+
FGK60N6S2D
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
Figure 26. Inductive Switching Test Circuit
©2002 Fairchild Semiconductor Corporation
Figure 27. Switching Test Waveforms
FGK60N6S2D Rev. A1
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler’s
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (ICE) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. td(OFF)I and td(ON)I are
defined in Figure 27. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than TJM . td(OFF)I is important
when controlling output ripple under a lightly loaded
condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2).
The allowable dissipation (PD) is defined by
PD = (TJM - TC)/RθJC. The sum of device switching
and conduction losses must not exceed PD. A 50%
duty factor was used (Figure 3) and the conduction
losses (PC) are approximated by PC = (VCE x ICE)/
2.
EON2 and EOFF are defined in the switching
waveforms shown in Figure 27. EON2 is the integral
of the instantaneous power loss (ICE x VCE) during
turn-on and EOFF is the integral of the instantaneous
power loss (ICE x VCE) during turn-off. All tail losses
are included in the calculation for EOFF; i.e., the
collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1
FGK60N6S2D
Handling Precautions for IGBTs
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effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H7