DCX100NS Lead-free Green 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS NEW PRODUCT General Description · DCX100NS is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor which can support continuous maximum current up to 100 mA. It also contains an NPN transistor which can be used as a control switch and also it can be biased using higher supply. The component devices can be used as part of a circuit or as stand alone discrete devices. 4 5 6 3 2 1 Fig. 1: SOT-563 Features · · · · · Built in Biasing Resistors Epitaxial Planar Die Construction CQ1 BQ2 EQ2 6 5 4 Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) Ideally Suited for Automated Assembly Processes Mechanical Data R4 Q2 R1 · · Case: SOT-563 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking & Type Code Information: See Page 5 10k Q1 DDTC114EE_DIE 1k Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 R2 10k R3 DDTA113ZE_DIE 10k Terminal Connections: See Fig. 2 SOT563 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Ordering Information: See Page 5 and 6 1 2 3 EQ1 BQ1 CQ2 Fig. 2: Schematic and Pin Configuration Weight: 0.005 grams (approximate) Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3, R4 (NOM) Figure DDTA113ZE_DIE Q1 PNP 1KW 10KW ¾ 2 DDTC114EE_DIE Q2 NPN ¾ ¾ 10KW 2 Maximum Ratings: Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Symbol Value Unit Pd 150 mW Thermal Resistance, Junction to Ambient Air (Note 3) RqJA 833 °C/W Operating and Storage Junction Temperature Range Tj, Tstg -55 to +150 °C Collector Current (using PNP as Pass Transistor) IC(max) 100 mA Sub-Component Device - Pre-Biased PNP Transistor Characteristic Value Unit Supply Voltage Vcc -50 V Input Voltage Vin +5 to -10 V Ic -100 mA Output Current Notes: Symbol @ TA = 25°C unless otherwise specified 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30761 Rev. 4 - 2 1 of 7 www.diodes.com DCX100NS ã Diodes Incorporated Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Supply Voltage Vcc 50 V Input Voltage Vin -10 to +40 V Ic 50 mA Output Current Electrical Characteristics: Pre-Biased PNP Transistor Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit VI(off) -0.3 ¾ ¾ V VCC = -5V, IO = -100uA Input Voltage Output Voltage Test Condition VI(on) ¾ ¾ -3.0 V VO = -0.3V, IO = -20mA VO(on) ¾ -0.1 -0.3 V IO/II = -10mA / -0.5mA II ¾ ¾ -7.2 mA VI = -5V IO(off) ¾ ¾ -0.5 uA VCC = -50V, VI = 0V GI 33 ¾ ¾ ¾ VO = -5V, IO = -5mA Input Resistor Tolerance DR1 -30 ¾ +30 % ¾ Resistor Ratio Tolerance R2/R1 0.8 1 1.2 % Gain-Bandwidth Product fT ¾ 250 ¾ MHz Input Current Output Current DC Current Gain Electrical Characteristics: Pre-Biased NPN Transistor Characteristic ¾ VCE = -10V, IE = -5mA, f = 100 MHz @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit VI(off) 0.5 1.18 ¾ V VCC = 5V, IO = 100uA Input Voltage Test Condition VI(on) ¾ 1.85 3 V VO = 0.3V, IO = 10mA VO(on) ¾ 0.1 0.3 V IO/II = 10mA / 0.5mA II ¾ ¾ 0.88 mA VI = 5V IO(off) ¾ ¾ 0.5 uA VCC = 50V, VI = 0V GI 30 ¾ ¾ ¾ VO = 5V, IO = 5mA Input Resistor Tolerance DR1 -30 ¾ +30 % Resistor Ratio Tolerance R2/R1 0.8 1 1.2 ¾ Gain-Bandwidth Product fT ¾ 250 ¾ MHz Output Voltage Input Current Output Current DC Current Gain Typical Characteristics ¾ ¾ VCE = 10V, IE = 5mA, f = 100 MHz @ Tamb = 25°C unless otherwise specified 250 Pd, POWER DISSIPATION (mW) NEW PRODUCT Sub-Component Device - Pre-Biased NPN Transistor 200 150 100 50 0 -50 DS30761 Rev. 4 - 2 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Derating Curve (Total Device) 2 of 7 www.diodes.com DCX100NS @ Tamb = 25°C unless otherwise specified 0.2 300 Ib = 18mA Ib = 16mA TA = 150°C VCE = 5V 250 0.16 Ib = 14mA 0.14 0.12 Ib = 20mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 0.18 Ib = 12mA Ib = 10mA 0.1 Ib = 8mA 0.08 Ib = 6mA Ib = 4mA Ib = 2mA 0.06 TA = 125°C 200 TA = 85°C 150 TA = 25°C 100 TA = -55°C 0.04 50 0.02 0 0 0.2 0.4 0.6 0.8 1.2 1 1.4 0 2 1.8 1.6 0.1 100 Ic/Ib=10 10 1 TA = 150°C TA = 125°C 0.1 TA = -55°C TA = 25°C TA = 85°C 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 VCE(SAT) vs IC 1000 VCE(SAT), COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 4 VCE(SAT) vs. IC VCE(SAT), COLLECTOR EMITTER VOLTAGE (V) 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain 1000 100 Ic/Ib=20 10 1 TA =150°C TA =125°C TA = -55°C 0.1 TA = 25°C TA = 85°C 0.01 0.1 10 1 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 7 VCE(SAT) vs IC 2 15 VBE(0N), BASE EMITTER VOLTAGE (V) VCE = 0.3V 12 INPUT VOLTAGE (V) NEW PRODUCT Characteristics Curves of PNP Transistor (Q1) 9 6 3 TA = -55°C TA =125°C TA = 25°C TA = 85°C TA =150°C 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 8 Input Voltage vs. Output Current DS30761 Rev. 4 - 2 VCE = 5V 1.8 1.6 1.4 TA = -55°C 1.2 1 TA = 25°C 0.8 0.6 TA = 150°C 0.4 TA = 85°C 0.2 TA = 125°C 0 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 VBE(ON) vs IC 3 of 6 www.diodes.com DCX100NS VBE(SAT), BASE EMITTER VOLTAGE (V) 12 9 6 TA = -55°C 3 TA = 85°C TA = 25°C TA = 150°C VBE(SAT), BASE EMITTER VOLTAGE (V) 8 IC/IB = 10 Ic/Ib=20 7 6 5 4 3 TA = -55°C 2 TA = 25°C 0 1 TA = 125°C 0 10 1 IC, COLLECTOR CURRENT (mA) Fig. 10 VBE(SAT) vs IC 0.1 100 0.1 Characteristics Curves of NPN Transistor (Q2) 0.1 10 1 IC, COLLECTOR CURRENT (mA) Fig. 11 VBE(SAT) vs IC 100 @ Tamb = 25°C unless otherwise specified 300 Ib = 1.5mA 0.09 Ib = 1.75mA Ib = 2mA VCE = 5V 0.07 0.06 0.05 0.04 0.03 Ib = 0.5mA Ib = 0.25mA Ib = 0.75mA 0.02 TA = 150°C 250 Ib = 1.25mA 0.08 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 150°C TA = 85°C TA = 125°C Ib = 1mA TA = 125°C 200 TA = 85°C 150 100 TA = 25°C TA = -55°C 50 0.01 0 0 0 0.4 0.8 1.2 1.6 2 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig.12 VCE vs IC 0.1 100 100 10 1 IC, COLLECTOR CURRENT (mA) Fig. 13 DC Current Gain 1000 100 Ic/Ib=20 Ic/Ib=20 VCE(SAT), COLLECTOR EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER VOLTAGE (V) NEW PRODUCT 15 10 1 TA = 150°C TA = 125°C 0.1 TA = 85°C TA = 25°C TA = -55°C 1 10 1 TA = 150°C TA = 125°C 0.1 100 1000 TA = 25°C 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 15 VCE(SAT) vs IC IC, COLLECTOR CURRENT (mA) Fig. 14 VCE(SAT) vs IC DS30761 Rev. 4 - 2 TA = -55°C TA = 85°C 0.01 0.01 0.1 10 4 of 7 www.diodes.com DCX100NS 25 INPUT VOLTAGE (V) 20 15 10 5 TA = 25°C TA = -55°C TA = 85°C TA = 125°C TA = 150°C 0 0.1 1 10 VCE = 5V 20 15 TA = 150°C TA = 125°C 10 TA = 85°C 5 TA = -55°C 0.1 Ic/Ib=10 24 18 TA = -55°C 12 TA = 25°C TA = 85°C 6 TA = 125°C TA = 150°C 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 18 VBE(ON) vs IC Ordering Information Notes: VBE(SAT), BASE EMITTER VOLTAGE (V) 30 TA = 25°C 0 100 IC, COLLECTOR CURRENT (mA) Fig. 16 Input Voltage vs Output Current VBE(SAT), BASE EMITTER VOLTAGE (V) NEW PRODUCT VCE = 0.3V VBE(ON), BASE EMITTER VOLTAGE (V) 25 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 17 VBE(ON) vs IC 100 30 Ic/Ib = 20 24 18 12 TA = -55°C 6 TA = 150°C TA = 25°C TA = 125°C TA = 85°C 0 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 19 VBE(SAT) vs IC 100 (Note 4) Device Marking Code Packaging Shipping DCX100NS-7 C01 SOT-563 3000/Tape & Reel 4. For Packaging Details, please see page 6 or go to our website at http://www.diodes.com/datasheets/ap02007.pdf. DS30761 Rev. 4 - 2 5 of 7 www.diodes.com DCX100NS NEW PRODUCT Marking Information C01 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 9 = September C01YM Fig. 20 Date Code Key Year 2005 2006 2007 2008 2009 2010 2011 2012 Code S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Mechanical Details SOT-563 A C01YM B C Dim Min Max Typ A 0.15 0.3 0.25 B 1.1 1.25 1.2 C 1.55 1.7 1.6 D D G M K H 0.5 G 0.90 1.1 1.00 H 1.5 1.7 1.6 K 0.56 0.6 0.6 L 0.15 0.25 0.2 M 0.1 0.18 0.11 All Dimensions in mm L Fig. 21 Suggested Pad Layout: (Based on IPC-SM-782) E Z E C G Y Figure 22 Dimensions SOT-563 Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 X Fig. 22 DS30761 Rev. 4 - 2 6 of 7 www.diodes.com DCX100NS NEW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30761 Rev. 4 - 2 7 of 7 www.diodes.com DCX100NS