2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA778(K), 2SA778A(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA778(K) 2SA778A(K) Unit Collector to base voltage VCBO –150 –180 V Collector to emitter voltage VCEO –150 –180 V Emitter to base voltage VEBO –5 –5 V Collector current IC –50 –50 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SA778(K) Item Symbol Min Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage Collector cutoff current Max Unit Test conditions –180 — — V I C = –50 µA, IE = 0 — –180 — — V I C = –50 µA, RBE = 30 kΩ — –1.0 — — — µA VCB = –100 V, IE = 0 — — — — — –1.0 µA VCB = –150 V, IE = 0 I EBO — — –1.0 — — –1.0 µA VEB = –5 V, IC = 0 DC current transfer ratio hFE 30 100 — 40 100 200 Collector to emitter saturation voltage VCE(sat) — –0.3 –1.0 — –0.3 –1.0 V I C = –15 mA, I B = –1 mA Base to emitter saturation voltage VBE(sat) — –0.77 –1.0 — –0.77 –1.0 V I C = –15 mA, I B = –1 mA Collector output capacitance Cob — — 10 — — 10 pF VCB = –10 V, IE = 0, f = 1 MHz Gain bandwidth product f T — 50 — — 50 — MHz VCE = –3 V, I C = –15 mA Turn on time t on — 135 — — 135 — ns VCC = –10.3 V Turn off time t off — 1.7 — — 1.7 — µs I C = 10 IB1 = –10 I B2 = –10 mA Storage time t stg — — 1.0 — — 1.0 µs VCC = –10 V, I C =–17 mA IB1 = –1mA, I B2 = –12 mA Emitter cutoff current 2 Typ 2SA778A(K) Max Min –150 — — V(BR)CER –150 — I CBO — Typ VCE = –3 V, I E = –15 mA 2SA778(K), 2SA778A(K) Switching Time Test Circuit Switching Time Test Circuit ton, toff Test Circuit D.U.T. 6k 6k 0.002 CRT 1k 2.4 k 0.002 50 P.G. tr, tf ≤ 15ns PW ≤ 5µs duty ratio ≤ 10% + 6V – + 50 tstg Test Circuit 510 D.U.T 0.1 – 50 –10.3 V Unit R : Ω C : µF ` P.G. tr, tf ≤ 5ns PW ≥ 5µs duty ratio = 50% 0.002 0.002 0.1 CRT 16 50 – –3 V + + 50 – 50 –10 V Unit R : Ω C : µF Response Waveform 0 Response Waveform 10% Input –13 V 0 Output 90% tstg 10% 90% 90% td ton 10% toff +7 V Input 0 0 Output 10% 10% tstg 3 2SA778(K), 2SA778A(K) Typical Output Characteristics (1) –50 300 Collector Current IC (mA) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 200 100 –40 P .0 –0.9 –0.8 –0.7 –1 C –0.6 –0.5 = 20 0 m W –0.4 –30 –0.3 –0.2 –0.15 –20 –0.1 –10 –0.05 mA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 –1 –2 –3 –4 –5 Collector to Emitter Voltage VCE (V) Collector Cutoff Current vs. Collector to Base Voltage Typical Output Characteristics (2) –0.5 –300 –0.4 –0.3 –0.2 –0.1 –4 –3 –2 –1 µA Collector Current ICBO (nA) Collector Current IC (mA) 125 –100 100 –30 75 –10 –3 –1.0 50 Ta = 25°C IB = 0 –0.3 0 4 –40 –80 –120 –160 –200 Collector to Emitter Voltage VCE (V) 0 –40 –80 –120 –160 –200 Collector to Base Voltage VCB (V) 2SA778(K), 2SA778A(K) Collector to Emitter Saturation Voltage vs. Collector Current VCE = –3 V 75 120 50 25 100 0 80 Ta = °C –25 60 40 –1 –2 –5 –10 –20 Collector Current IC (mA) –0.8 –0.6 –1.2 –0.8 –0.4 25 50 5°C =7 –0.5 –0.4 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) –50 Input and Output Capacitance vs. Voltage –25 0 Ta IC = 10 IB 0 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) IC = 10 IB –0.7 –1.6 Collector output capacitance Cob (pF) Emitter input capacitance Cib (pF) –0.9 –2.0 –50 Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE (sat) (V) DC current transfer ratio hFE 140 Collector to emitter saturation voltage VCE (sat) (V) DC Current Transfer Ratio vs. Collector Current –50 12 10 f = 1 MHz Cib (IC = 0) 8 6 Cob (IE = 0) 4 2 0 –0.5 –1.0 –2 –5 –10 –20 –50 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) 5 2SA778(K), 2SA778A(K) Gain Bandwidth Product vs. Collector Current Switching Time vs. Collector Current 5 IC = 10 IB1 = –10 IB2 VCE = –3 V 40 30 20 1.0 toff tstg 0.5 0.2 ton 0.1 0.05 td 10 0.02 0 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) 6 2 50 Switching time t (µs) Gain bandwidth product fT (MHz) 60 –50 0.01 –0.5–1.0 –2 –5 –10 –20 –50 Collector Current IC (mA) Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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