HITACHI 2SA778(K)

2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
Application
High voltage medium speed switching
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA778(K), 2SA778A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA778(K)
2SA778A(K)
Unit
Collector to base voltage
VCBO
–150
–180
V
Collector to emitter voltage
VCEO
–150
–180
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–50
–50
mA
Collector power dissipation
PC
200
200
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA778(K)
Item
Symbol
Min
Collector to base
breakdown voltage
V(BR)CBO
Collector to emitter
breakdown voltage
Collector cutoff current
Max
Unit
Test conditions
–180 —
—
V
I C = –50 µA, IE = 0
—
–180 —
—
V
I C = –50 µA,
RBE = 30 kΩ
—
–1.0
—
—
—
µA
VCB = –100 V, IE = 0
—
—
—
—
—
–1.0
µA
VCB = –150 V, IE = 0
I EBO
—
—
–1.0
—
—
–1.0
µA
VEB = –5 V, IC = 0
DC current transfer ratio hFE
30
100
—
40
100
200
Collector to emitter
saturation voltage
VCE(sat)
—
–0.3
–1.0
—
–0.3
–1.0
V
I C = –15 mA,
I B = –1 mA
Base to emitter
saturation voltage
VBE(sat)
—
–0.77 –1.0
—
–0.77 –1.0
V
I C = –15 mA,
I B = –1 mA
Collector output
capacitance
Cob
—
—
10
—
—
10
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Gain bandwidth product f T
—
50
—
—
50
—
MHz
VCE = –3 V,
I C = –15 mA
Turn on time
t on
—
135
—
—
135
—
ns
VCC = –10.3 V
Turn off time
t off
—
1.7
—
—
1.7
—
µs
I C = 10 IB1 = –10
I B2 = –10 mA
Storage time
t stg
—
—
1.0
—
—
1.0
µs
VCC = –10 V,
I C =–17 mA
IB1 = –1mA,
I B2 = –12 mA
Emitter cutoff current
2
Typ
2SA778A(K)
Max
Min
–150 —
—
V(BR)CER
–150 —
I CBO
—
Typ
VCE = –3 V,
I E = –15 mA
2SA778(K), 2SA778A(K)
Switching Time Test Circuit
Switching Time Test Circuit
ton, toff Test Circuit
D.U.T.
6k
6k
0.002
CRT
1k
2.4 k
0.002
50
P.G.
tr, tf ≤ 15ns
PW ≤ 5µs
duty ratio ≤ 10%
+
6V
– +
50
tstg Test Circuit
510
D.U.T
0.1
–
50
–10.3 V
Unit R : Ω
C : µF `
P.G.
tr, tf ≤ 5ns
PW ≥ 5µs
duty ratio = 50%
0.002
0.002
0.1
CRT
16
50
–
–3 V
+ +
50
–
50
–10 V
Unit R : Ω
C : µF
Response Waveform
0
Response Waveform
10%
Input
–13 V
0
Output
90%
tstg
10%
90%
90%
td
ton
10%
toff
+7 V
Input
0
0
Output
10%
10%
tstg
3
2SA778(K), 2SA778A(K)
Typical Output Characteristics (1)
–50
300
Collector Current IC (mA)
Collector power dissipation Pc (mW)
Maximum Collector Dissipation Curve
200
100
–40
P
.0
–0.9
–0.8
–0.7
–1
C
–0.6
–0.5
=
20
0
m
W
–0.4
–30
–0.3
–0.2
–0.15
–20
–0.1
–10
–0.05 mA
IB = 0
0
50
100
150
Ambient Temperature Ta (°C)
0
–1
–2
–3
–4
–5
Collector to Emitter Voltage VCE (V)
Collector Cutoff Current vs.
Collector to Base Voltage
Typical Output Characteristics (2)
–0.5
–300
–0.4
–0.3
–0.2
–0.1
–4
–3
–2
–1 µA
Collector Current ICBO (nA)
Collector Current IC (mA)
125
–100
100
–30
75
–10
–3
–1.0
50
Ta =
25°C
IB = 0
–0.3
0
4
–40
–80
–120 –160 –200
Collector to Emitter Voltage VCE (V)
0
–40 –80 –120 –160 –200
Collector to Base Voltage VCB (V)
2SA778(K), 2SA778A(K)
Collector to Emitter Saturation Voltage vs.
Collector Current
VCE = –3 V
75
120
50
25
100
0
80
Ta =
°C
–25
60
40
–1
–2
–5
–10
–20
Collector Current IC (mA)
–0.8
–0.6
–1.2
–0.8
–0.4
25
50
5°C
=7
–0.5
–0.4
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
Collector Current IC (mA)
–50
Input and Output Capacitance vs.
Voltage
–25
0
Ta
IC = 10 IB
0
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
Collector Current IC (mA)
IC = 10 IB
–0.7
–1.6
Collector output capacitance Cob (pF)
Emitter input capacitance Cib (pF)
–0.9
–2.0
–50
Base to Emitter Saturation Voltage vs.
Collector Current
Base to emitter saturation voltage
VBE (sat) (V)
DC current transfer ratio hFE
140
Collector to emitter saturation voltage
VCE (sat) (V)
DC Current Transfer Ratio vs.
Collector Current
–50
12
10
f = 1 MHz
Cib (IC = 0)
8
6
Cob (IE = 0)
4
2
0
–0.5 –1.0 –2
–5 –10 –20
–50
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
5
2SA778(K), 2SA778A(K)
Gain Bandwidth Product vs.
Collector Current
Switching Time vs. Collector Current
5
IC = 10 IB1 = –10 IB2
VCE = –3 V
40
30
20
1.0
toff
tstg
0.5
0.2
ton
0.1
0.05
td
10
0.02
0
–0.5 –1.0 –2
–5 –10 –20
Collector Current IC (mA)
6
2
50
Switching time t (µs)
Gain bandwidth product fT (MHz)
60
–50
0.01
–0.5–1.0 –2 –5 –10 –20 –50
Collector Current IC (mA)
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.