ETC 2SJ553(L)|2SJ553(S)

2SJ553(L), 2SJ553(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-650B (Z)
3rd. Edition
Jul. 1998
Features
• Low on-resistance
R DS(on) = 0.028Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
4
4
D
1
G
1
S
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SJ553(L),2SJ553(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–30
A
–120
A
–30
A
–30
A
77
mJ
75
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP
Note1
Note3
EAR
Note3
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SJ553(L),2SJ553(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
–60
—
—
V
I D = –10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
–10
µA
VDS = –60 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –1mA, VDS = –10V
Static drain to source on state
RDS(on)
—
0.028
0.037
Ω
I D = –15A, VGS = –10V Note4
resistance
RDS(on)
—
0.038
0.055
Ω
I D = –15A, VGS = –4V Note4
Forward transfer admittance
|yfs|
15
25
—
S
I D = –15A, VDS = –10V Note4
Input capacitance
Ciss
—
2500
—
pF
VDS = –10V
Output capacitance
Coss
—
1300
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
25
—
ns
VGS = –10V, ID = –15A
Rise time
tr
—
150
—
ns
RL = 2Ω
Turn-off delay time
t d(off)
—
350
—
ns
Fall time
tf
—
220
—
ns
Body–drain diode forward voltage VDF
—
–0.95
—
V
I F = –30A, VGS = 0
Body–drain diode reverse
recovery time
—
100
—
ns
I F = –30A, VGS = 0
diF/ dt =50A/µs
Note:
t rr
4. Pulse test
3
2SJ553(L),2SJ553(S)
Main Characteristics
Power vs. Temperature Derating
Drain Current I D (A)
Channel Dissipation Pch (W)
60
40
20
10
–100
50
100
Case Temperature
150
200
–1
s
s
0m
s
Ta = 25 °C
–1
–10
Drain to Source Voltage V
–100
(V)
DS
–50
–8 V
–3.5 V
–5 V
Pulse Test
–40
–4 V
VGS = –10 V
–3 V
–20
–2.5 V
V DS = –10 V
Pulse Test
–40
Drain Current I D (A)
Drain Current I D (A)
=1
Typical Transfer Characteristics
Typical Output Characteristics
–10
Op
0µ
1m
(1
er
sh
ot)
(T atio
c= n
Operation in
2
5
this area is
°C
)
limited by R DS(on)
–0.1
–50
–30
DC
–10
Tc (°C)
µs
10
PW
–0.1
0
Maximum Safe Operation Area
–1000
80
–30
–20
–10
Tc = 75 °C
25 °C
-25 °C
–2 V
0
4
–2
–4
–6
–8
–10
Drain to Source Voltage V DS(V)
0
–1
–2
–3
Gate to Source Voltage V
–4
(V)
GS
–5
2SJ553(L),2SJ553(S)
–4
–3
–2
I D = –50 A
–1
–20 A
–10 A
0
Static Drain to Source on State Resistance
R DS(on) ( W)
Pulse Test
–4
–8
–12
Gate to Source Voltage
0.08
–20 A
I D = –50 A
0.04
0
–40
0.2
0.1
VGS = –4 V
–10 V
0.02
–16
–20
V GS (V)
–10 A
–50 A
V GS = –4 V
0.02
0.5
Pulse Test
0.01
Static Drain to Source on State Resistance
vs. Temperature
0.1
Pulse Test
0.06
Static Drain to Source on State Resistance
vs. Drain Current
1
0.05
–10,–20A
V GS = –10 V
0
40
80
120
160
Case Temperature Tc (°C)
–1
–3
–10
–30
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–5
Drain to Source On State Resistance
R DS(on) ( W)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
–100 –300
–1000
I D (A)
Forward Transfer Admittance vs.
Drain Current
30
Tc = –25 °C
25 °C
10
3
75 °C
1
0.3
V DS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1
–3
–10 –30
Drain Current I D (A)
–100
5
2SJ553(L),2SJ553(S)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
Coss
300
30
10
0
–8
–80
V DD = –10 V
–25 V
–50 V
160
40
80
120
Gate Charge Qg (nc)
–12
–16
–20
200
V GS (V)
–4
V GS
–60
–30
–40
–50
1000
Switching Time t (ns)
–40
–100
0
6
I D = –30 A
–20
Switching Characteristics
0
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
–20
V DS
–10
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DD = –10 V
–25 V
–50 V
Crss
100
10
100
30
3
1
0.3
Reverse Drain Current I DR (A)
0
Ciss
1000
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
20
10
0.1
3000
VGS = 0
f = 1 MHz
500
200
100
t d(off)
tf
tr
50
t d(on)
20
10
–0.1 –0.3
V GS = –10 V, V DD = –30 V
PW = 5 µs, duty <
=1%
–3
–1
–10 –30
Drain Current I D (A)
–100
2SJ553(L),2SJ553(S)
Maximum Avalanche Energy vs.
Channel Temperature Derating
–50
Reverse Drain Current I DR (A)
Pulse Test
–40
–5 V
–30
V GS = 0
–10 V
–20
–10
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
100
I AP = –30 A
V DD = –25 V
duty < 0.1 %
Rg > 50 W
80
60
40
20
0
25
50
V SD (V)
Avalanche Test Circuit
V DS
Monitor
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
–15 V
50W
0
VDD
7
2SJ553(L),2SJ553(S)
Normalized Transient Thermao Impedance g s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
q ch – c(t) = g s (t) • q ch – c
q ch – c = 1.67 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
1
10
Waveform
Vin
10%
D.U.T.
RL
90%
Vin
-10 V
50W
V DD
= –30 V
Vout
td(on)
8
90%
90%
10%
10%
tr
td(off)
tf
2SJ553(L),2SJ553(S)
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (L)
—
—
1.4 g
9
2SJ553(L),2SJ553(S)
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
7.8
7.0
(1.5)
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
10
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
LDPAK (S)-(1)
—
—
1.3 g
2SJ553(L),2SJ553(S)
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
11
2SJ553(L),2SJ553(S)
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Colophon 2.0
12