3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389 1st. Edition Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S ±8 V Gate 2 to source voltage VG2S ±8 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 3SK297 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 12 — — V I D = 200 µA , VG1S = –3 V, VG2S = –3 V Gate 1 to source breakdown voltage V(BR)G1SS ±8 — — V I G1 = ±10 µA, VG2S = VDS = 0 Gate 2 to source breakdown voltage V(BR) G2SS ±8 — — V I G2 = ±10 µA, VG1S = VDS = 0 Gate 1 cutoff current I G1SS — — ±100 nA VG1S = ±6 V, VG2S = VDS = 0 Gate 2 cutoff current I G2SS — — ±100 nA VG2S = ±6 V, VG1S = VDS = 0 Drain current I DS(on) 0.5 — 10 mA VDS = 6 V, VG1S = 0.75V, VG2S = 3 V Gate 1 to source cutoff voltage VG1S(off) 0 — +1.0 V VDS = 10 V, VG2S = 3V, I D = 100 µA Gate 2 to source cutoff voltage VG2S(off) 0 — +1.0 V VDS = 10 V, VG1S = 3V, I D = 100 µA Forward transfer admittance |yfs| 16 20 — mS VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz Input capacitance Ciss 2.4 2.9 3.4 pF VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Output capacitance Coss 0.8 1.0 1.4 pF Reverse transfer capacitance Crss — 0.023 0.04 pF Power gain PG 22 25 — dB Noise figure NF — 1.0 1.8 dB Power gain PG 12 15 — dB Noise figure NF — 3.2 4.5 dB Noise figure NF — 2.8 3.5 dB VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 200 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 60 MHz Note: Marking is “ZP–” 3 3SK297 20 200 100 50 16 1.2 V 12 1.0 V 8 0.8 V 0.6 V 4 0 50 100 150 200 Ambient Temperature Ta (°C) Drain Current vs. Gate2 to Source Voltage V DS = 6 V 2.0 V Pulse test 1.5 V 2.5 V 12 1.0 V 8 4 16 2.0 V 2.5 V 1 2 3 Gate1 to source voltage 4 5 VG1S (V) Pulse test 1.5 V 12 1.0 V 8 4 VG1S = 0.5 V VG2S = 0.5 V 0 V DS = 6 V 3.0 V Drain current I D (mA) 3.0 V 16 2 4 6 8 10 Drain to source voltage VDS (V) 20 20 I D (mA) Pulse test VG1S = 0.4 V Drain Current vs. Gate1 to Source Voltage 4 1.4 V I D (mA) 150 0 Drain current Typical Output Characteristics VG2S = 3 V Drain current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 0 1 2 3 4 5 Gate2 to source voltage VG2S (V) 3SK297 Power Gain vs. Drain Current 30 VDS = 6 V f = 1 kHz 24 PG (dB) 30 V G2S = 3.0 V 18 2.0 V 12 1.5 V 6 0.4 0.8 1.2 12 VDS = 6 V VG2S = 3 V f = 200 MHz 6 1.0 V 0.5 V 0 24 18 2.5 V Power gain Forward transfer admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 to Source Voltage 1.6 0 1 2.0 Gate1 to source voltage VG1S (V) PG (dB) 24 18 Power gain NF (dB) Noise figure I D (mA) 30 1.8 1.2 0.6 0 1 20 10 Power Gain vs. Drain to Source Voltage VDS = 6 V VG2S = 3 V f = 200 MHz 2.4 5 Drain current Noise Figure vs. Drain Current 3.0 2 12 VG2S = 3 V I D = 10 mA f = 200 MHz 6 2 5 Drain current 10 I D (mA) 20 0 2 4 6 Drain to source voltage 8 VDS 10 (V) 5 3SK297 Noise Figure vs. Drain to Source Voltage Power Gain vs. Drain Current 20 PG (dB) 1.6 0.8 VG2S = 3 V I D = 10 mA f = 200 MHz 0.4 0 16 12 1.2 Power gain Noise figure NF (dB) 2.0 2 4 6 Drain to source voltage VDS 0 1 PG (dB) Power gain NF (dB) Noise figure 20 I D (mA) 16 12 4 2 8 VG2S = 3 V I D = 10 mA f = 900 MHz 4 2 5 Drain current 6 10 20 6 0 1 5 Power Gain vs. Drain to Source Voltage VDS = 6 V VG2S = 3 V f = 900 MHz 8 2 Drain current (V) Noise Figure vs. Drain Current 10 VDS = 6 V VG2S = 3 V f = 900 MHz 4 10 8 8 10 I D (mA) 20 0 2 4 6 Drain to source voltage 8 10 VDS (V) 3SK297 Noise Figure vs. Drain to Source Voltage Noise figure NF (dB) 5 4 3 2 VG2S = 3 V I D = 10 mA f = 900 MHz 1 0 2 4 6 Drain to source voltage 8 10 VDS (V) 7 3SK297 S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency Scale: 0.5 / div. 90° 1.5 .6 60° 120° 2 .4 3 4 5 .2 30° 150° 10 .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –.4 –30° –150° –3 –2 –.6 –.8 –1 –90° Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.002 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1.0 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) 8 –2 –.6 –.8 –1 –1.5 Condition: V DS = 6 V , V G2S = 3 V I D = 10 mA , Zo = 50 Ω 50 to 1000 MHz (50 MHz step) 3SK297 S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 ) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 50 0.994 –5.8 2.04 173.6 0.00116 76.9 0.993 –2.2 100 0.993 –11.0 2.02 167.4 0.00132 85.7 0.993 –4.5 150 0.986 –16.8 2.00 161.5 0.00229 78.2 0.991 –6.4 200 0.980 –22.5 1.98 155.5 0.00313 73.5 0.990 –8.5 250 0.973 –27.8 1.94 149.6 0.00427 68.7 0.987 –10.5 300 0.950 –33.0 1.90 142.6 0.00473 63.9 0.985 –12.5 350 0.936 –38.3 1.86 137.1 0.00536 64.3 0.982 –14.4 400 0.924 –43.4 1.83 131.6 0.00561 64.5 0.979 –16.2 450 0.912 –48.0 1.77 126.8 0.00562 60.9 0.975 –18.2 500 0.893 –52.5 1.71 121.0 0.00640 53.5 0.971 –20.2 550 0.874 –57.3 1.67 115.5 0.00638 49.3 0.967 –22.0 600 0.859 –62.0 1.64 111.1 0.00647 49.0 0.964 –23.9 650 0.846 –66.1 1.58 106.7 0.00667 50.2 0.960 –25.8 700 0.829 –69.8 1.50 102.1 0.00694 49.3 0.955 –27.6 750 0.810 –74.2 1.46 97.1 0.00661 46.6 0.952 –29.4 800 0.802 –78.0 1.44 92.7 0.00618 43.7 0.948 –31.2 850 0.791 –81.6 1.38 88.9 0.00622 44.7 0.944 –33.2 900 0.778 –84.6 1.34 84.2 0.00615 43.6 0.940 –35.1 950 0.756 –88.5 1.30 80.2 0.00576 45.1 0.935 –36.8 1000 0.751 –92.2 1.26 75.9 0.00562 40.7 0.932 –38.5 9 Unit: mm 0.95 0 – 0.1 0.65 0.1 0.6 +– 0.05 0.16 – 0.06 2.8 1.5 ± 0.15 + 0.1 0.4 – 0.05 + 0.1 0.65 + 0.1 0.4 – 0.05 0.4 – 0.05 + 0.2 – 0.6 + 0.1 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.85 1.1 – 0.1 + 0.2 0.3 1.8 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-4 — Conforms 0.013 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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