Ordering number : ENN6600 2SK2631 N-Channel Silicon MOSFET 2SK2631 Ultrahigh-Speed Switching Applications Features unit : mm 2083B [2SK2631] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.3 SANYO : TP unit : mm 2092B [2SK2631] 6.5 5.0 4 0.5 0.5 0.85 1 0.6 2.3 2 1.2 7.0 5.5 1.5 2.3 2.5 • Package Dimensions Low ON resistance. Smaller amount of total gate charge. 0.8 • 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 63000 TS IM TA-3024 No.6600-1/5 2SK2631 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 800 Gate-to-Source Voltage VGSS ±30 V 1 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Tc=25°C V 3 A 30 W Allowable Power Dissipation PD 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Conditions Ratings min typ max V(BR)DSS IDSS ID=1mA, VGS=0 VDS=800V, VGS=0 IGSS VGS(off) VGS=±30V, VDS=0 VDS=10V, ID=1mA 3.5 |yfs| VDS=10V, ID=0.5A 370 RDS(on) Ciss 300 pF 85 pF 40 pF 8 nC ns Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Output Capacitance Coss ID=0.5A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz Reverse Transfer Capacitance Crss VDS=20V, f=1MHz Input Capacitance Total Gate Charge Qg VDS=200V, ID=1A, VGS=10V 800 Unit V 1.0 mA ±100 nA 5.5 740 7.5 V ms 10 Ω Turn-ON Delay Time td(on) See specified Test Circuit 12 Rise Time tr td(off) See specified Test Circuit 8 ns See specified Test Circuit 27 ns Turn-OFF Delay Time Fall Time tf VSD Diode Forward Voltage See specified Test Circuit IS=1A, VGS=0 16 0.82 ns 1.2 V Marking : K2631 Switching Time Test Circuit VDD=200V 15V 0V VIN ID=0.5A RL=400Ω VIN PW=1µs D.C.≤0.5% D VOUT G 2SK2631 P.G RGS 50Ω S No.6600-2/5 2SK2631 ID -- VDS 3.0 VDS=10V 15V 10V 2.5 1.8 Drain Current, ID -- A 2.0 1.5 7V 1.0 Tc= --25°C 1.6 8V Drain Current, ID -- A ID -- VGS 2.0 1.4 25°C 1.2 1.0 75°C 0.8 0.6 0.4 0.5 VGS=6V 0.2 0 0 0 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 0 50 RDS(on) -- VGS 16 5 10 15 20 Gate-to-Source Voltage, VGS -- V IT02479 IT02480 RDS(on) -- Tc 18 ID=1.0A Static Drain-to-Source ON State Resistance, RDS(on) -- Ω Static Drain-to-Source ON State Resistance, RDS(on) -- Ω Tc=25°C 14 0.5A 12 10 0.1A 8 2 4 6 8 10 12 14 16 18 20 0V =1 S V , V G =15 .5A V GS 0 = , ID .5A =0 ID 10 8 6 4 2 --50 --25 0 25 50 75 100 VDS=10V ID=1mA 6 Cutoff Voltage, VGS(off) -- V 2 Tc= 3 2 °C --25 C 25° 1.0 7 5 0.1 7 5 3 150 IT02482 VGS(off) -- Tc 7 VDS=10V 3 125 Case Temperature, Tc -- °C 5 4 3 2 1 2 0.01 2 0.1 3 5 7 1.0 2 Drain Current, ID -- A 0 --50 3 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C IT02483 IF -- VSD 10 7 5 3 2 150 IT02484 Ciss, Coss, Crss -- VDS 1000 VGS=0 f=1MHz 7 5 Ciss, Coss, Crss -- pF 1.0 7 5 3 2 C 0.01 7 5 3 2 --25° 75° C 25°C 0.1 7 5 3 2 Tc= Forward Current, IF -- A 12 IT02481 |yfs| -- ID 10 7 5 75°C Forward Transfer Admittance, |yfs| -- S Gate-to-Source Voltage, VGS -- V 14 0 --75 6 0 16 Ciss 3 2 Coss 100 7 Crss 5 3 2 10 0.001 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VSD -- V 1.2 1.4 IT02485 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT02486 No.6600-3/5 2SK2631 VGS -- Qg 10 VDD=200V VGS=15V 7 Switching Time, SW Time -- ns Gate-to-Sourse Voltage, VGS -- V 9 SW Time -- ID 100 VDS=200V ID=1A 8 7 6 5 4 3 2 5 td (off) 3 2 tf td(on) 10 tr 7 5 1 3 0.1 0 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 10µs 10 0µ s 2 ID=1A 1.0 7 5 1m DC 3 s 10 op ms era tio 2 n Operation in this area is limited by RDS(on). 0.1 7 5 3 Tc=25°C Single pulse 2 0.01 1.0 2 3 5 7 2 1.0 IT02488 PD -- Tc 35 30 25 20 15 10 5 0 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 7 1000 IT02489 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT02490 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 3 Drain Current, ID -- A 40 IDP=3A 3 2 IT02487 ASO 10 7 5 Drain Current, ID -- A 8 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02491 No.6600-4/5 2SK2631 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. PS No.6600-5/5