Ordering number:ENN6003 N-Channel Silicon MOSFET 2SK2976 DC-DC Converter Applications Features Package Dimensions · Low ON resistance. · 4V drive. unit:mm 2083B [2SK2976] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 3 2.3 2.3 2092B [2SK2976] 6.5 5.0 4 2.3 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 0.5 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2139 No.6003–1/4 2SK2976 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Ratings Unit 30 V ±20 V ID 15 A Drain Current (DC) Drain Current (Pulse) Conditions VDSS VGSS IDP PW≤10µs, duty cycle≤1% 45 A 1 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=1mA, VGS=0 VGS=±16V, VDS=0 RDS(on)1 ID=7A, VGS=10V ID=4A, VGS=4V RDS(on)2 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Ratings min typ max 30 VDS=10V, ID=1mA VDS=10V, ID=7A 10 µA ±10 µA 2.4 V 28 36 mΩ 42 58 mΩ 1.0 8 Unit V VDS=30V, VGS=0 IGSS VGS(off) | yfs | Input Capacitance 12 S VDS=10V, f=1MHz VDS=10V, f=1MHz 700 pF 380 pF 180 pF td(on) VDS=10V, f=1MHz See specified Test Circuit 15 ns tr See specified Test Circuit 280 ns td(off) See specified Test Circuit 80 ns tf See specified Test Circuit 80 ns 22 nC 5 nC Rise Time Turn-OFF Delay Time Conditions Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, VGS=10V, ID=7A 6 IS=7A, VGS=0 0.85 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=7A RL=2.1Ω VIN PW=10µs D.C.≤1% VOUT D G P.G 50Ω S No.6003–2/4 2SK2976 I D - VDS I D - VGS 10 VDS =10V 3.0 V 9 8 2 5 5°C 4 3 2 1 1 VGS=2.0V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 0 0.5 | yf s | - I D 100 7 5 VDS=10V 3 2 10 7 5 =Tc 25° C °C 25 5°C 7 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 60 ID=7A ID=4A 50 40 30 20 10 0 0 2 Forward Current, IF – A 12 14 16 18 20 0.9 1.0 I F - VSD 3 2 5°C 10V , VGS = 3 2 0.1 7 5 3 2 -40 -20 0 20 40 60 80 100 120 140 160 0.01 0 0.1 Case Temperature, Tc – ˚C 1000 7 5 Ciss Coss 3 2 Crss 100 7 5 3 2 15 20 25 Drain-to-Source Voltage, VDS – V 30 Gate-to-Source Voltage, VGS – V 3 2 10 0.3 0.4 0.5 0.6 0.7 0.8 VGS - Q g 10 f = 1MHz 5 0.2 Diode Forward Voltage, VSD – V Ciss, Coss, Crss - VDS 10000 7 5 Ciss, Coss, Crss – pF 10 Tc=7 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ =4V 10 10 0 8 1.0 7 5 20 0 -60 6 10 VGS= 0 7 5 60 30 4 Gate-to-Source Voltage, VGS – V 70 ID =7A 3.0 Tc=25°C 70 5 7 100 80 40 2.5 80 90 A,VGS ID =4 2.0 90 R DS(on) - Tc 50 1.5 R DS(on) - VGS 100 Drain Current, ID – A 100 1.0 Gate-to-Source Voltage, VGS – V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Forward Transfer Admittance, | yfs | – S Drain-to-Source Voltage, VDS – V - 25°C 0.1 25°C 0 0 C 3 6 Tc= 7 2.5V 4 7 25° C 5 Drain Current, ID – A 6 10V Drain Current, ID – A 7 3.5 V 4.0V 8.0V 6.0V -25° 8 VDS=10V 9 ID =7A 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 Total Gate Charge, Qg – nC No.6003–3/4 2SK2976 SW Time - I D 1000 5 Drain Current, ID – A 3 2 t d(off) 100 tf 7 5 tr Switching Time, SW Time – ns 7 3 2 t d(on) 10 7 7 0.1 2 3 5 7 1.0 2 3 5 7 10 10 7 5 3 2 2 Allowable Power Dissipation, PD – W Ta he at sin k 0.4 0.2 0 0 20 40 60 80 100 op era tio 1m s n Operation in this area is limited by RDS(on). 1.0 7 5 3 2 7 1.0 2 3 5 7 2 10 3 5 P D - Tc 24 0.8 No 10 ms 100µs Drain-to-Source Voltage, VDS – V 1.0 0.6 I D =15A 0.1 7 5 Tc=25°C Single pulse 3 2 3 5 Allowable Power Dissipation, PD – W PD - 10µs DC Drain Current, ID – A 1.2 A S O 100 7 I =45A 5 DP 3 2 VDD =15V VGS=10V 120 Ambient Temperature, Ta – ˚C 140 160 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc – ˚C Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6003–4/4