Ordering number:ENN6436 N-Channel Silicon MOSFET 2SK3280 DC/DC Converter Applications Package Dimensions · Low ON-resistance. · 4V drive. · Ultrahigh-speed switching. unit:mm 2083B [2SK3280] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SK3280] 6.5 5.0 4 2.3 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 0.5 3 1.2 0 to 0.2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60800TS (KOTO) TA-2615 No.6436–1/4 2SK3280 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Conditions Ratings Unit VDSS VGSS 30 V ±20 V ID 20 A IDP PW≤10µs, duty cycle≤1% 45 A 1 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions ID=1mA, VGS=0 Ratings min typ 30 V VDS=30V, VGS=0 IGSS VGS(off) | yfs | VGS=±16V, VDS=0 RDS(on)1 ID=10A, VGS=10V VDS=10V, ID=1mA VDS=10V, ID=10A Unit max 1 µA ±10 µA 2.4 V 15 20 mΩ 31 mΩ 1.0 12 18 S RDS(on)2 ID=10A, VGS=4.5V 22 Input Capacitance Ciss 1000 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 410 pF Reverse Transfer Capacitance Crss 160 pF Turn-ON Delay Time td(on) VDS=10V, f=1MHz See specified Test Circuit 11 ns tr See specified Test Circuit 210 ns td(off) See specified Test Circuit 80 ns tf See specified Test Circuit 85 ns Qg VDS=10V, VGS=10V, ID=20A 17 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=20A VDS=10V, VGS=10V, ID=20A 3.3 Gate-to-Drain "Miller" Charge 1.7 nC Diode Forward Voltage VSD IS=20A, VGS=0 1.0 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=10A RL=1.5Ω VIN D VOUT PW=10µs D.C.≤1% G P.G 2SK3280 50Ω S No.6436–2/4 2SK3280 ID -- VDS 16 1 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS – V 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS – V IT01822 RDS(on) -- VGS 60 4.0 IT01823 RDS(on) -- Tc 60 Tc=25°C 35 30 ID=4A 20 15 10 5 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS – V 20 3 2 Forward Current, IF – A 2 °C 25 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID – A 7 10 IT01826 0.01 7 5 3 2 0.001 0.2 3 2 Crss 100 7 5 3 2 150 IT01825 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD – V Gate-to-Source Voltage, VGS – V Coss 125 1.0 7 5 3 2 0.1 7 5 3 2 1.1 1.2 IT01827 VGS -- Qg 10 Ciss 100 VGS=0 VDS=10V ID=20A 9 1000 7 5 75 IF -- VSD f=1MHz 3 2 50 10 7 5 3 2 Ciss, Coss, Crss -- VDS 10000 7 5 25 100 7 5 3 2 3 °C --25 Tc= C 75° 0 Case Temperature, Tc – ˚C VDS=10V 10 7 5 --25 IT01824 yfs -- ID 100 7 5 10 C 4 20 25° C 2 I =4A 4.5V, D = S VG 10A .0V, I D= V GS=10 0 --50 0 0 30 75° 25 40 C 10A 40 50 Tc= 45 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 50 --25 ° 55 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 25°C 4 0 Forward Transfer Admittance, | yfs | – S 6 2 0 Ciss, Coss, Crss – pF 8 5°C 3 10 Tc= 7 4 12 °C 5 VGS=2.5V 14 --2 5 10.0V 7 6 VDS=10V 18 Drain Current, ID – A 3.5 V 8.0V 8 Drain Current, ID – A 6.0V 4.5V 9 ID -- VGS 20 3. 0V 10 8 7 6 5 4 3 2 1 10 0 5 10 15 20 Drain-to-Source Voltage, VDS – V 25 30 IT01828 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Total Gate Charge, Qg – nC IT01829 No.6436–3/4 2SK3280 SW Time -- ID 3 2 td(off) 100 7 5 tf 3 tr 2 td(on) 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 Drain Current, ID – A 3 ID=20A DC tio n Operation in this area is limited by RDS(on). 3 2 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 0.01 2 3 5 7 0.1 0 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS – V 5 7 100 IT01831 PD -- Tc 40 0.5 op era IT01830 1.0 <10µs 1m 100µs 10 s ms 1.0 7 5 Allowable Power Dissipation, PD – W Allowable Power Dissipation, PD – W 2 10 IDP=45A 10 7 5 3 2 PD -- Ta 1.5 ASO 100 7 5 3 2 VDD=15V VGS=10V Drain Current, ID – A Switching Time, SW Time – ns 1000 7 5 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT01832 0 20 40 60 80 100 120 Case Temperature, Tc – ˚C 140 160 IT01833 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. PS No.6436–4/4