SANYO 2SK3280TP-FA

Ordering number:ENN6436
N-Channel Silicon MOSFET
2SK3280
DC/DC Converter Applications
Package Dimensions
· Low ON-resistance.
· 4V drive.
· Ultrahigh-speed switching.
unit:mm
2083B
[2SK3280]
2.3
5.5
1.5
6.5
5.0
4
0.5
7.0
Features
1.2
7.5
0.8
1.6
0.85
0.7
0.6
0.5
1
2
3
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
unit:mm
2092B
[2SK3280]
6.5
5.0
4
2.3
0.5
2.3
2
2.5
1
0.6
0.8
0.85
1.2
7.0
5.5
1.5
0.5
3
1.2
0 to 0.2
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2615 No.6436–1/4
2SK3280
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Conditions
Ratings
Unit
VDSS
VGSS
30
V
±20
V
ID
20
A
IDP
PW≤10µs, duty cycle≤1%
45
A
1
W
Allowable Power Dissipation
PD
30
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Tc=25˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Conditions
ID=1mA, VGS=0
Ratings
min
typ
30
V
VDS=30V, VGS=0
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0
RDS(on)1
ID=10A, VGS=10V
VDS=10V, ID=1mA
VDS=10V, ID=10A
Unit
max
1
µA
±10
µA
2.4
V
15
20
mΩ
31
mΩ
1.0
12
18
S
RDS(on)2
ID=10A, VGS=4.5V
22
Input Capacitance
Ciss
1000
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
410
pF
Reverse Transfer Capacitance
Crss
160
pF
Turn-ON Delay Time
td(on)
VDS=10V, f=1MHz
See specified Test Circuit
11
ns
tr
See specified Test Circuit
210
ns
td(off)
See specified Test Circuit
80
ns
tf
See specified Test Circuit
85
ns
Qg
VDS=10V, VGS=10V, ID=20A
17
nC
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=10V, ID=20A
VDS=10V, VGS=10V, ID=20A
3.3
Gate-to-Drain "Miller" Charge
1.7
nC
Diode Forward Voltage
VSD
IS=20A, VGS=0
1.0
1.2
V
Switching Time Test Circuit
VDD=15V
VIN
10V
0V
ID=10A
RL=1.5Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
P.G
2SK3280
50Ω
S
No.6436–2/4
2SK3280
ID -- VDS
16
1
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS – V
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-to-Source Voltage, VGS – V
IT01822
RDS(on) -- VGS
60
4.0
IT01823
RDS(on) -- Tc
60
Tc=25°C
35
30
ID=4A
20
15
10
5
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS – V
20
3
2
Forward Current, IF – A
2
°C
25
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID – A
7
10
IT01826
0.01
7
5
3
2
0.001
0.2
3
2
Crss
100
7
5
3
2
150
IT01825
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD – V
Gate-to-Source Voltage, VGS – V
Coss
125
1.0
7
5
3
2
0.1
7
5
3
2
1.1
1.2
IT01827
VGS -- Qg
10
Ciss
100
VGS=0
VDS=10V
ID=20A
9
1000
7
5
75
IF -- VSD
f=1MHz
3
2
50
10
7
5
3
2
Ciss, Coss, Crss -- VDS
10000
7
5
25
100
7
5
3
2
3
°C
--25
Tc=
C
75°
0
Case Temperature, Tc – ˚C
VDS=10V
10
7
5
--25
IT01824
yfs -- ID
100
7
5
10
C
4
20
25°
C
2
I =4A
4.5V, D
=
S
VG
10A
.0V, I D=
V GS=10
0
--50
0
0
30
75°
25
40
C
10A
40
50
Tc=
45
Static Drain-to-Source
On-State Resistance, RDS (on) – mΩ
50
--25
°
55
Static Drain-to-Source
On-State Resistance, RDS (on) – mΩ
25°C
4
0
Forward Transfer Admittance, | yfs | – S
6
2
0
Ciss, Coss, Crss – pF
8
5°C
3
10
Tc=
7
4
12
°C
5
VGS=2.5V
14
--2
5
10.0V
7
6
VDS=10V
18
Drain Current, ID – A
3.5
V
8.0V
8
Drain Current, ID – A
6.0V
4.5V
9
ID -- VGS
20
3.
0V
10
8
7
6
5
4
3
2
1
10
0
5
10
15
20
Drain-to-Source Voltage, VDS – V
25
30
IT01828
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17
Total Gate Charge, Qg – nC
IT01829
No.6436–3/4
2SK3280
SW Time -- ID
3
2
td(off)
100
7
5
tf
3
tr
2
td(on)
10
7
5
3
2
1.0
0.1
2
3
5
7
1.0
2
3
5
7
Drain Current, ID – A
3
ID=20A
DC
tio
n
Operation in this
area is limited by RDS(on).
3
2
0.1
7
5
3
2 Tc=25°C
Single pulse
0.01
0.01 2 3 5 7 0.1
0
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS – V
5 7 100
IT01831
PD -- Tc
40
0.5
op
era
IT01830
1.0
<10µs
1m 100µs
10 s
ms
1.0
7
5
Allowable Power Dissipation, PD – W
Allowable Power Dissipation, PD – W
2
10
IDP=45A
10
7
5
3
2
PD -- Ta
1.5
ASO
100
7
5
3
2
VDD=15V
VGS=10V
Drain Current, ID – A
Switching Time, SW Time – ns
1000
7
5
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – ˚C
140
160
IT01832
0
20
40
60
80
100
120
Case Temperature, Tc – ˚C
140
160
IT01833
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS No.6436–4/4