Power-SPMTM FD6M016N03 tm 30V/80A Synchronous Rectifier Module General Features General Description • Very High Rectification Efficiency at Output 12V The FD6M016N03 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS(ON) MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise. • Integrated Solution for Saving Board Space • RoHS Compliant MOSFET Features Applications • VDSS = 30V • High Current Isolated Converter • QG(TOTAL) = 132nC(Typ.), VGS = 5V • Distributed Power Architectures • RDS(ON) = 1.3mΩ(Typ.), VGS = 10V, ID = 40A • Synchronous rectifivation • Low Miller Charge • DC/DC Converter • Low Qrr Body Diode • Battery supplied application • UIS Capability (Single Pulse and Repetitive Pulse) • ORing MOSFET • Fully Isolated package 1 15 EPM15 Package Block Diagram 10 9 G2 D2 15 8 14 G1 6 13 S2 12 7 11 S1 D1 1 2 3 4 5 Figure 1. FD6M016N03 Module Block Diagram ©2008 Fairchild Semiconductor Corporation FD6M016N03 Rev. A 1 www.fairchildsemi.com FD6M016N03 30V/80A Synchronous Rectifier Module June 2008 FD6M016N03 30V/80A Synchronous Rectifier Module Pin Configuration and Pin Description Top View D1 S1 G1 NC NC G2 S2 D2 NC Figure 2. Pinmap of FD6M016N03 Pin Number Pin Name Pin Description 1 D1 Drain of Q1, MOSFET 2~5 S1 Source of Q1, MOSFET 6 G1 Gate of Q1, MOSFET 7 NC No Connection 8 NC No Connection 9 NC No Connection 10 G2 Gate of Q2, MOSFET 11 ~ 14 S2 Source of Q2, MOSFET 15 D2 Drain of Q2, MOSFET Absolute Maximum Ratings TC = 25°C, Symbol Unless Otherwise Specified Parameter Rating Unit 30 V Gate to Source Voltage ±20 V Drain Current, Continuous (VGS = 10V) (Note1) 80 A EAS Single Pulse Avalanche Energy (Note1,2) 1584 mJ TJ, TSTG Operating and Storage Temperature Range -40 ~ 150 °C VDS Drain to Source Voltage VGS ID (Note1) Thermal Resistance Symbol RθJC Parameter Junction to Case Thermal Resistance (Note1) Min. Typ. Max. Unit - - 3.9 °C/W Note: 1. Each MOSFET Switch 2. Starting TJ = 25°C, VD = 20V, L = 0.25mH, IAS = 65A FD6M016N03 Rev. A 2 www.fairchildsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units - V Synchronous Rectifier Switch Part (Each Switch) BVDSS Drain to Source Breakdown Voltage ID= 250μA, VGS = 0V 30 - IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 24V - - 1 μA IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate Threshold Voltage VD = 5V, IDS = 250μA 1 - 3 V RDS(ON) Drain to Source On Resistance ID = 40A, VGS = 10V - 1.3 1.6 - 1.96 - - 11535 - pF - 2195 - pF TJ = 150°C mΩ Dynamic Charateristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance - 1580 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V - 227 295 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 121 158 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 9.3 13 nC Qgs Gate to Source Gate Charge VDD = 15V - 29 - nC Qgs2 Gate Charge Threshold to Plateau ID = 40A - 20 - nC Qgd Gate to Drain “MIller” Charge Ig = 1.0mA - 46 - nC VDS = 15V, VGS = 0V, f = 1MHz Switching Charateristics (VGS = 5V) tON Turn-On Time - - 165 ns td(on) Turn-On Delay Time - 26 - ns tr Rise Time - 65 - ns td(off) Turn-Off Delay Time - 90 - ns tf Fall Time - 60 - ns tOFF Turn-Off Time - - 255 ns ISD = 80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.0 ID = 40A VGS = 5V, VDD = 15V, RG = 2.5Ω Drain-Source Diode Charateristics VSD Source to Drain Diode Voltage V trr Reverse Recovery Time ISD = 40A, dISD/dt = 100A/μs - 38 - ns Qrr Reverse Recovery Charge ISD = 40A, dISD/dt = 100A/μs - 32 - nC FD6M016N03 Rev. A 3 www.fairchildsemi.com FD6M016N03 30V/80A Synchronous Rectifier Module Electrical Characteristics TC = 25°C, Unless Otherwise Specified FD6M016N03 30V/80A Synchronous Rectifier Module Typical Performance Characteristics 1. Each Switch, Unless Otherwise Specified Figure 3. On-Region Characteristics 120 VGS 10.0 V 5.0 V 3.5 V Bottom : 3.0 V ID, Drain Current[A] Top : 80 VDS ID D VGS G 40 VGS,STEP *Notes : 1. 250μs Pulse Test o 2. TC = 25 C 0 0.0 0.5 1.0 VDS FD6M016N03 S 1.5 VDS, Drain-Source Voltage[V] Figure 4. Transfer Characteristics 200 160 ID, Drain Current[A] ID VDS D VGS o 150 C 120 G VDS VGS FD6M016N03 o 25 C o 80 -40 C 40 *Notes: 1. VDS = 15V 2. 250μs Pulse Test S 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Input Voltage[V] Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Output Capacitance Characteristic Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 100 o 125 C Capacitance [nF] IS, Reverse Drain Current [A] 20 o 25 C 10 * Notes : 1. VGS = 0V 2. 250μs Pulse Test 1 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] FD6M016N03 Rev. A 15 10 * Note: 1. VGS = 0 V 2. f = 1 MHz Coss 5 0 0.1 1.2 Ciss iss Crss 1 10 30 VDS, Drain-Source Voltage [V] 4 www.fairchildsemi.com Figure 8. On-Resistance Variation vs. Temperature 1.15 2.0 * Notes: 1. VGS = 0V 2. ID = 250μA 1.10 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.00 0.90 0.85 -50 0 50 100 150 1.5 1.0 0.5 * Notes : 1. VGS = 10 V 2. ID = 40 A 0.0 200 -50 0 50 100 150 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] 200 Figure 9. Transient Thermal Response Curve Thermal Response [ZθJC] 10 0.5 1 0.2 0.1 0.05 0.1 PDM 0.02 t1 0.01 t2 *Notes: o 0.01 1. ZθJC(t) = 3.9 C/W Typ. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 -4 10 -3 -2 10 -1 10 0 10 1 10 2 10 10 Rectangular Pulse Duration [sec] Figure 10. Maximum Safe Operating Area Figure 11. Unclamped Inductive Switching Capability 500 500 ID, Drain Current [A] IAS, Avalanche Current [A] 10μs 100 100 1ms 10ms DC Operation in This Area is Limited by R DS(on) 10 1 * Notes : o 1. TC = 25 C o 2. TJ = 125 C 3. Single Pulse 0.1 0.1 FD6M016N03 Rev. A 1 10 VDS, Drain-Source Voltage [V] o Starting TJ = 25 C 10 o Starting TJ = 100 C 1 0.01 50 If R = 0 tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1] 0.1 1 10 100 1000 tAV, Time In Avalanche [ms] 5 www.fairchildsemi.com FD6M016N03 30V/80A Synchronous Rectifier Module Typical Performance Characteristics (Continued) IAS D VGS tp VDS VDS IAS L VDD VGS G VDD tp FD6M016N03 S 0 tAV Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms VDS D VGS RL R 13. G Figure Switching Test WaveformsVDD G FD6M016N03 PULSE S Figure 13. Switching Test Circuit tON tOFF td(ON) td(OFF) tr tf 90% 90% VDS 10% 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 14. Switching Test Waveforms FD6M016N03 Rev. A 6 www.fairchildsemi.com FD6M016N03 30V/80A Synchronous Rectifier Module AC Test Circuits and Waveforms VIN VOUT 9 10 G2 15 D2 8 6 14 G1 7 S2 13 12 PWM Controller 11 S1 D1 1 2 3 4 5 OPTO Feedback Figure 15. Application Circuit of Forward Converter with FD6M016N03 VOUT LF VIN G2 9 10 15 D2 CF Q1 8 CR 6 14 G1 7 S2 VOUT_FB 13 12 FOD817 KA431 11 Q2 S1 D1 1 2 3 4 5 LF Figure 16. Application Circuit of Asymmetrical HB Converter with FD6M016N03 VOUT LF VIN Q1 Q3 G2 9 10 15 D2 CF 8 6 14 G1 7 S2 13 12 Q2 VOUT_FB FOD817 KA431 11 Q4 S1 D1 1 2 3 4 5 LF Figure 17. Application Circuit of Full Bridge Converter with FD6M016N03 FD6M016N03 Rev. A 7 www.fairchildsemi.com FD6M016N03 30V/80A Synchronous Rectifier Module Application circuits 26.20 25.80 2.70 2.30 23.10 22.90 (0.50) (R0.50) 5.35 5.15 10.70 10.30 (12.00) 14.50 13.50 18.50 17.50 (1.50) (R0.55) (0.77) (R0.55) 0.70 0.30 MAX 3.07 MAX 0.80 2.97 2.77 0.70 0.50 (6.00) 0.60 0.40 3.48 2.88 1.27 22.86 (R0.50) 2.70 2.30 Figure 18. EPM15 Package Dimensions in Millimeters FD6M016N03 Rev. A 8 www.fairchildsemi.com FD6M016N03 30V/80A Synchronous Rectifier Module Detailed Package Outline Drawings The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. FD6M016N03 Rev. A Rev. I34 9 www.fairchildsemi.com FD6M016N03 30V/80A Synchronous Rectifier Module TRADEMARKS