MCH5818 Ordering number : ENN7754 MCH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. [SBD] • Short reverse recovery time. • Low forward voltage. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ±12 V ID --1.5 A IDP PD Allowable Power Dissipation --12 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V --6.0 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 0.5 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 3 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QU Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62504 TS IM TA-3839 No.7754-1/5 MCH5818 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 VDS=--12V, VGS=0 --12 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±9.6V, VDS=0 VDS=--6V, ID=--1mA --1.0 Forward Transfer Admittance yfs RDS(on)1 VDS=--6V, ID=--0.8A 0.9 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage V --1 µA ±10 µA --2.4 1.4 V S ID=--0.8A, VGS=--10V ID=--0.4A, VGS=--4.5V 200 270 340 490 mΩ mΩ 370 530 mΩ Input Capacitance Ciss ID=--0.1A, VGS=--4V VDS=--6V, f=1MHz 145 pF Output Capacitance Coss VDS=--6V, f=1MHz 45 pF Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 35 pF Turn-ON Delay Time td(on) See specified Test Circuit 7.5 ns Rise Time tr td(off) See specified Test Circuit 20 ns See specified Test Circuit 16 ns tf See specified Test Circuit 12 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.5A 3.8 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.5A 0.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.5A 0.5 Diode Forward Voltage VSD IS=--1.5A, VGS=0 VR VF 1 IR=0.5mA IF=0.3A VF 2 Interterminal Capacitance IR C IF=0.5A VR=6V VR=10V, f=1MHz, 1 cycle Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. nC --0.94 --1.5 V 0.35 0.41 V 0.4 0.46 V 200 µA [SBD] Reverse Voltage Forward Voltage Reverse Current 0.25 Package Dimensions unit : mm 2195 V 20 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 0.15 1.6 0.65 5 2.0 4 (Bottom view) 0.85 0.25 1 2 3 Top view 0.07 1 2 ns Electrical Connection 0.3 3 pF 10 5 4 2.1 15 1 2 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 3 (Top view) SANYO : MCPH5 No.7754-2/5 MCH5818 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --10V Duty≤10% 100mA ID= --0.8A RL=12.5Ω VIN D 50Ω 100Ω 10Ω 100mA VOUT PW=10µs D.C.≤1% 10mA VIN 0V --10V 10µs --5V G trr MCH5818(MOSFET) 50Ω S --1.8 --1.0 VGS= --2.5V --0.8 --0.6 Ta= V --3.0 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 600 --0.1A 500 400 300 200 100 0 --4 --6 --1.5 --2.0 --2.5 --3.0 --3.5 IT07179 RDS(on) -- Ta 800 --0.8A --2 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C ID= --0.4A 700 --0.5 IT05613 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.9 RDS(on) -- VGS 800 0 25 °C --0.4 Ta =7 5°C --2 5° C --1.4 --1.2 Drain Current, ID -- A --1.6 75 °C VDS= --10V V .0 --4 --1.6 Drain Current, ID -- A ID -- VGS --2.0 .5V --4 --1.8 --6 . --1 0 V 0V ID -- VDS --2.0 --25 25 °C °C P.G --8 --10 Gate-to-Source Voltage, VGS -- V --12 IT07180 700 600 500 400 I D= --4.0V S= --4.5V S= VG , A .4 , VG --0.1A 0 I D= -- 300 --10V A, V GS= I D= --0.8 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT05616 No.7754-3/5 MCH5818 2 C 25° °C a= -25 T C 75° 1.0 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.4 5 7 --10 IT05617 Drain Current, ID -- A --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 IT05618 Ciss, Coss, Crss -- VDS 3 VDD= --10V VGS= --10V f=1MHz 2 Ciss 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 --2 5°C 25° C 3 VGS=0 Ta = 5 Forward Drain Current, IF -- A Forward Transfer Admittance, yfs -- S 7 IF -- VSD --10 7 5 VDS= --10V 75 ° C yfs -- ID 10 100 7 5 3 2 tf td(off) 10 7 5 td(on) 100 7 3 2 tr 3 Coss Crss 5 2 1.0 --0.01 10 2 3 5 7 --0.1 2 5 7 --1.0 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A 1 2 3 4 Total Gate Charge, Qg -- nC IT05621 PD -- Ta 1.0 0.8 s 3 2 n 0 Allowable Power Dissipation, PD -- W 7 5 s 0m io 0 m 10 --1.0 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 --1 10 ID= --1.5A at --2 100µs er --3 10µs op --4 3 2 --12 IT05620 ASO C --5 --10 IDP= --6A D --6 --8 s --8 --7 --6 1m --10 7 5 VDS= --10V ID= --1.5A --9 --4 Drain-to-Source Voltage, VDS -- V VGS -- Qg --10 --2 0 5 7 --10 IT05619 3 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT07173 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07174 No.7754-4/5 MCH5818 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7754-5/5