Ordering number : ENN7312 FW503 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW503 DC / DC Converter Applications Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high8 density mounting. The FW503 incorporates two chips being equivalent to the MCH3306 and the SBS004 in one package. [FW503] 0.3 5 1 4 0.2 0.595 1.27 0.43 0.1 1.5 5.0 6.0 • Package Dimensions 4.4 • 1.8max Features 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID Drain Current (Pulse) PW≤10µs, duty cycle≤1% --20 V ±10 V --3 A --12 A Allowable Power Dissipation IDP PD 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 1 A Surge Forward Current 10 A Junction Temperature IFSM Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Mounted on a ceramic board (2000mm2✕0.8mm) ≤10S [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Marking : W503 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2502 TS IM TA-100186 No.7312-1/5 FW503 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=--1mA, VGS=0 VDS=--20V, VGS=0 --20 IGSS VGS(off) VGSS=±8V, VDS=0 VDS=--10V, ID=--1mA yfs RDS(on)1 VDS=--10V, ID=--3A RDS(on)2 RDS(on)3 V --0.3 3.5 --10 µA ±10 µA --1.0 V 5 S ID=--3A, VGS=--4.5V ID=--2.5A, VGS=--2.5V 130 170 mΩ 170 240 mΩ 230 340 mΩ Input Capacitance Ciss ID=--0.1A, VGS=--1.8V VDS=--10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 410 pF VDS=--10V, f=1MHz 60 pF Crss VDS=--10V, f=1MHz 40 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 27 ns See specified Test Circuit. 42 ns Turn-OFF Delay Time Fall Time tf Qg See specified Test Circuit. 38 ns VDS=--10V, VGS=--4.5V, ID=--3A 5.0 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4.5V, ID=--3A 0.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4.5V, ID=--3A 1.2 Diode Forward Voltage VSD IS=--3A, VGS=0 VR VF 1 IR=1mA IF=0.5A VF 2 Interterminal Capacitance IR C IF=1A VR=15V VR=10V, f=1MHz cycle Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Total Gate Charge nC --1.0 --1.2 V 0.3 0.35 V [SBD] Reverse Voltage Forward Voltage Reverse Current 15 V 0.35 0.4 V 500 µA 42 pF 15 ns Electrical Connection 6 5 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode (Top view) 1 2 3 4 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --10V Duty≤10% 100mA VIN 0V --4.5V ID= --3A RL=3.3Ω VIN D 50Ω 100Ω VOUT PW=10µs D.C.≤1% 10µs 10Ω 10mA 7 100mA 8 --5V G trr FW503 P.G 50Ω S No.7312-2/5 FW503 ID -- VDS [MOSFET] --1.5V 5°C --1 25 °C VGS= --1.0V 0 --25 °C --1 --2 Ta= 7 Drain Current, ID -- A 0V --2 ID -- VGS --3 VDS=10V V .8 --1 --4.0 V --2 .5 [MOSFET] --10 . Drain Current, ID -- A --3.0 V V --3 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 Drain-to-Source Voltage, VDS -- V IT05278 RDS(on) -- VGS [MOSFET] 400 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT05279 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 3.0A 200 2.5A ID=0.1A 150 100 50 300 --2 --8 5°C --2 = Ta °C 25°C 75 1.0 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --40 --20 0 20 40 60 80 100 IF -- VSD 120 140 160 IT05281 [MOSFET] VGS=0 3 2 --1.0 7 5 3 2 --0.1 7 5 SW Time -- ID 5 --0.01 --0.2 5 7 --10 IT05282 Drain Current, ID -- A [MOSFET] VDD= --10V VGS= --4V 3 7 td (off) 5 tf 3 tr 2 td(on) 10 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 Drain-to-Source Forward Voltage, VF -- V IT05283 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz 7 5 2 100 --0.3 1000 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns .0V V GS=4 3 2 2 0.1 --0.01 A, I D=3.0 --10 7 5 5 2 150 2.5V V GS= Ambient Temperature, Ta -- °C VDS=10V 3 .5A, I D=2 0 --60 --10 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S --6 200 50 IT05280 Gate-to-Source Voltage, VGS -- V [MOSFET] yfs -- ID 10 7 --4 .1A I D=0 100 0 0 =1.8V , V GS 250 °C 300 350 --25 350 Ta =7 5°C 25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C Ciss 3 2 100 7 Coss 5 Crss 3 7 2 5 3 --0.1 10 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 IT05284 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT05285 No.7312-3/5 FW503 VGS -- Qg [MOSFET] 3 2 VDD= --10V ID= --3A --10 7 5 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 --6 --4 --2 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 10 0µ 1m s s 10 m 0m s 10 s s 10 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (2000mm2✕0.8mm) ≤10S 1unit 2 3 IT05286 PD -- Ta 2.5 <10µs ID= --3A --0.01 --0.01 10 [MOSFET] IDP= --12A --1.0 7 5 3 2 0 Allowable Power Dissipation, PD -- W 3 2 ASO 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V IT05287 IR -- VR [SBD] [MOSFET] M 2.0 ou nte do na ce ram 1.5 ic bo ard (20 00 1.0 mm 2 ✕0 .8m m) 0.5 ≤1 0S 1u nit 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT05288 IF -- VF [SBD] 2 100 7 5 3 2 1.0 Reverse Current, IR -- mA 5 12 5 10 °C 0 75 °C ° 50 C ° 25° C C 3 2 Ta = Forward Current, IF -- A 7 0.1 7 5 3 2 0.01 100°C 10 7 5 3 2 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 Forward Voltage, VF -- V PF(AV) -- IO 0.8 0.6 Rectangular wave 0.5 (2) (4) (1) (3) 360° 0.3 0.2 Sine wave 0.1 0 0 0.2 0.4 0.6 10 15 IT02958 C -- VR 3 [SBD] f=1MHz 2 θ 0.4 5 Reverse Voltage, VR -- V [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.7 0 IT02957 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W 5°C 2 Ta=1 0.8 180° 360° 1.0 Average Forward Current, IO -- A 1.2 1.4 IT02959 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 Reverse Voltage, VR -- V 10 2 IT02960 No.7312-4/5 FW503 IS -- t Surge Forward Current, IFSM(Peak) -- A 12 [SBD] Current waveform 50Hz sine wave IS 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 IT00636 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2002. Specifications and information herein are subject to change without notice. PS No.7312-5/5