Ordering number:EN6427 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5801 DC/DC Converter Applications Package Dimensions unit:mm 2171 [CPH5801] 2.9 0.15 0.2 4 3 0.6 5 0.05 2.8 1.6 · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. · Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively. 0.6 Features 1 2 0.4 0.9 0.7 0.2 0.95 0.4 Specifications 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS 20 V ±10 V ID 1.4 A Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 5.6 A Allowable Power Dissipation Mounted on a ceramic board (600mm2×0.8mm) 1unit 0.9 W Channel Temperature PD Tch Storage Temperature Tstg 150 ˚C –55 to +125 ˚C VRRM VRSM 30 V 30 V IO 1 A [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle 10 A –55 to +125 ˚C –55 to +125 ˚C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2491 No.6427–1/5 CPH5801 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS VGS(off) Cutoff Voltage Forward Transfer Admittance 20 1.8 RDS(on)1 VDS=10V, ID=700mA ID=700mA, VGS=4V RDS(on)2 ID=400mA, VGS=2.5V Ciss Output Capacitance 10 µA ±10 µA 1.3 V 200 260 mΩ 260 360 mΩ VGS=±8V, VDS=0 0.4 Input Capacitance V VDS=20V, VGS=0 VDS=10V, ID=1mA | yfs | Static Drain-to-Source On-State Resistance ID=1mA, VGS=0 2.5 S 90 pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 28 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 20 ns td(off) See specified Test Circuit 20 ns tf See specified Test Circuit 20 ns nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 6 1 nC 2 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A Diode Forward Voltage VSD IS=1.4A, VGS=0 VR VF1 VF2 IR=1mA IF=0.5A IR VR=15V C VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. 0.9 1.2 V 0.35 0.4 0.42 0.47 V 500 µA [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time trr Rthj-a Thermal Resistance 30 V IF=2A 35 pF 15 Mounted on a ceramic board (600mm2×0.8mm) 110 V ns ˚C/W Marking : QA Electrical Connection (Top view) A S C G D Switching Time Test Circuit [MOSFET block] Reverse Recovery Time Test Circuit [SBD block] VDD=10V VIN ID=700mA 4V 0V PW=10µs D.C.≤1% G P.G 10µs 50Ω 100Ω 10Ω 10mA Duty≤10% D 100mA VOUT VIN 100mA RL=14.3Ω CPH5801 50Ω S --5V trr No.6427–2/5 CPH5801 ID -- VDS 2.0 1.0 0.8 0.6 VGS=1.5V 25° C Ta= --25 °C 3.0 °C 1.2 [MOSFET] 2.5 75 2.0V Drain Current, ID – A 3. 0V V 4.0 3.5 V 2.5 10. 0V Drain Current, ID – A 1.6 1.4 ID -- VGS 4.0 VDS=10V 8.0V 6.0V 1.8 [MOSFET] 2.0 1.5 1.0 0.4 0.5 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS – V RDS(on) -- VGS 500 1.0 0 [MOSFET] 2.0 2.5 3.0 3.5 IT01075 [MOSFET] 400 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 1.5 RDS(on) -- Ta 450 Ta=25°C 400 700mA 350 300 ID=400mA 250 200 150 100 50 0 1 2 3 4 5 7 6 8 9 Gate-to-Source Voltage, VGS – V yfs -- ID 10 10 7 Forward Current, IF – A 3 °C 25 = Ta 1.0 °C 75 7 5 150 100 50 --40 --20 0 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID – A 0.1 7 5 3 2 0 [MOSFET] td(off) tf 2 10 7 5 td(on) 80 120 140 160 IT01077 [MOSFET] 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD – V IT01079 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz 5 3 2 100 Ciss 7 Coss 5 3 3 100 7 Ciss, Coss, Crss – pF tr 3 0.3 1000 3 100 7 5 60 1.0 7 5 3 2 7 10 VDD=10V VGS=4V 2 40 VGS = 0 IT01078 SW Time -- ID 1000 7 5 20 IF -- VSD 0.01 7 5 3 2 0.001 3 0.1 0.01 200 10 7 5 3 2 5 --2 250 Ambient Temperature, Ta – ˚C VDS=10V 2 2.5V S= VG , A 400m V I D= =4.0 VGS , A 700m I D= 300 IT01076 [MOSFET] C 5° 350 0 --60 0 Forward Transfer Admittance, | yfs | – S 1.0 Gate-to-Source Voltage, VGS – V 450 Switching Time, SW Time – ns 0.5 IT01074 Ta=7 5° 25°C C --25° C 0 Crss 2 2 1.0 0.1 10 2 3 5 7 1.0 2 Drain Current, ID – A 3 5 7 10 IT01080 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS – V 18 20 IT01081 No.6427–3/5 CPH5801 VGS -- Qg 10 9 8 7 6 5 4 3 2 0 2 3 4 5 6 Total Gate Charge, Qg – nC DC 10 0m 0.1 7 5 s op era tio Operation in this area is limited by RDS(on). n Ta=25°C Single pulse 1unit Mounted on a ceramic board (600mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Drain-to-Source Voltage, VDS – V IT01083 IF -- VF [SBD] 1.0 7 °C 25 5 ce ram ic 0.6 bo ard (6 00 mm 0.4 2 ×0 .8m 0.1 7 5 3 m) 0.2 2 75 °C na 3 2 1u nit 0 25 °C do °C nte 0.8 =1 Ta 50 ou 0.9 0° C M 10 1.0 Forward Current, IF – A Allowable Power Dissipation, PD – W ms 7 5 3 2 s 10 ID=1.4A 0.1 [MOSFET] 100µs 1m 1.0 IT01082 PD -- Ta 1.2 0.01 20 40 100 7 5 3 2 60 80 100 120 140 Ambient Temperature, Ta – ˚C IT01084 IR -- VR [SBD] 5°C Ta=12 10 7 5 3 2 100°C 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.01 0 5 10 15 20 25 30 Reverse Voltage, VR – V 0.2 PF(AV) -- IO [SBD] ⁄Rectangular wave θ=60° ¤Rectangular wave θ=120° 0.8 ‹Rectangular wave θ=180° ›Sine wave θ=180° ¤ 0.7 3 2 10 7 5 3 2 ‹ › ⁄ 0.6 0.5 0.4 Rectangular wave θ 0.3 360° 0.2 Sine wave 0.1 180° 360° 1.0 0 0 0.2 0.4 0.6 0.8 1.2 1.4 IT00629 IS -- t [SBD] Current waveform : 50Hz sine wave 12 Surge Forward Current, IS (Peak) – A 100 7 5 0.5 Average Forward Current, IO -- A [SBD] 3 2 0.4 IT00627 1.0 0.9 0.3 Forward Voltage, VF – V f=1MHz 7 5 1.0 1.0 0.1 IT00628 C -- VR 1000 0 160 Average Forward Power Dissipation, PF(AV) -- W 0 Reverse Current, IR – mA 3 2 0.01 1 0 [MOSFET] IDP=5.6A 3 2 1 Interterminal Capacitance, C – pF ASO 10 7 5 Drain Current, ID – A Gate-to-Source Voltage, VGS – V [MOSFET] VDS=10V ID=1.4A Is 10 20ms t 8 6 4 2 0 2 3 5 7 10 Reverse Voltage, VR – V 2 3 5 IT00630 7 0.01 2 3 5 7 0.1 2 Time, t – s 3 5 7 1.0 2 3 IT00631 No.6427–4/5 CPH5801 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6427–5/5