SANYO MCH6629

MCH6629
Ordering number : EN8239A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
MCH6629
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
1.5V drive.
High ESD voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage (*1)
VGSS
--10
V
ID
--0.4
A
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--1.6
A
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
Ratings
min
typ
Unit
max
--30
VGS=--8V, VDS=0V
VDS=--10V, ID=--100µA
--0.4
VDS=--10V, ID=--0.2A
0.25
V
--1
µA
--1
µA
--1.4
V
1.9
Ω
Ω
Forward Transfer Admittance
VGS(off)
yfs
ID=--0.2A, VGS=--4V
ID=--0.1A, VGS=--2.5V
1.5
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
2.0
2.8
ID=--10mA, VGS=--1.5V
VDS=--10V, f=1MHz
4.0
8.0
Input Capacitance
RDS(on)3
Ciss
0.42
S
40
Ω
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
8
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
4.5
pF
Marking : YL
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306 TI IM TC-00000383 / 22805PE TS IM TB-00001232 No.8239-1/5
MCH6629
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
td(off)
See specified Test Circuit.
5
ns
See specified Test Circuit.
10
ns
tf
See specified Test Circuit.
5
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
nC
Qgs
VDS=--10V, VGS=--4V, ID=--0.4A
VDS=--10V, VGS=--4V, ID=--0.4A
0.83
Gate-to-Source Charge
0.25
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--0.4A
0.17
Diode Forward Voltage
VSD
IS=--0.4A, VGS=0V
--1.0
Package Dimensions
0.25
6
5
4
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
3
0.65
0.3
0.85
0.07
5
4
2.1
1.6
0.25
2
6
0.15
0 to 0.02
1
V
Electrical Connection
unit : mm (typ)
7022A-006
2.0
nC
--1.5
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
SANYO : MCPH6
Switching Time Test Circuit
VDD= --15V
VIN
0V
--4V
ID= --0.2A
RL=75Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
P.G
MCH6629
50Ω
S
No.8239-2/5
MCH6629
ID -- VDS
--0.45
--0.40
--0.15
Drain Current, ID -- A
Drain Current, ID -- A
--0.20
Ta=
--25
°C
75°
C
25°
C
V
--3.
5
V
--2.0
--6. --4.5V
0V
--4.
0V
--0.25
ID -- VGS
--0.50
--3
.0V
--2
.5
V
--0.30
--0.35
VDS= --10V
--0.30
--0.25
VGS= --1.5V
--0.20
--0.10
25°
C
--0.10
--0.05
Ta=
75 °
C
--25
°C
--0.15
--0.05
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
0
--1.0
--1.0
--1.5
--2.0
--2.5
--3.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
5.0
--0.5
IT07653
--3.5
IT07654
RDS(on) -- Ta
4.0
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
3.0
--0.1A
2.5
2.0
1.5
1.0
0.5
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
0.1
°C
25
7
1.5
1.0
0.5
--40
--20
5
3
0
20
40
60
80
100
120
140
IT09248
IS -- VSD
--1.0
7
5
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
C
5°
--2
=
°C
Ta
75
2
V
= --4.0
A, V GS
Ambient Temperature, Ta -- °C
5
3
= --2
VGS
.1A,
0.2
I D= --
IT09247
VDS= --10V
7
--0
I D=
2.0
0
--60
--10
yfs -- ID
1.0
VGS=0V
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
2
0.01
--0.001
2
3
5 7 --0.01
2
3
5 7 --0.1
2
3
Drain Current, ID -- A
5 7 --1.0
IT07657
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
--1.4
IT09249
Ciss, Coss, Crss -- VDS
60
VDS= --15V
VGS= --4V
2
50
td(on)
10
td (off)
7
tr
5
tf
Ciss
40
30
20
10
3
2
--0.1
--0.001
--0.2
Ciss, Coss, Crss -- pF
3
Switching Time, SW Time -- ns
--9
.5V
2.5
°C
0
3.0
--25°C
ID= --0.2A
3.5
3.5
25°C
4.0
Ta=7
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
4.5
Coss
Crss
0
2
3
Drain Current, ID -- A
5
7
IT09250
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT08163
No.8239-3/5
MCH6629
VGS -- Qg
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Total Gate Charge, Qg -- nC
--25°C
1.0
7
2
3
5
7
2
--0.1
3
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25°C
1.0
2
3
5
7
2
--0.1
3
5
Drain Current, ID -- A
s
1m
--1.0
7
ID= --0.4A
--1.0
IT08165
PW≤10µs
10
0µ
s
10
3
DC
2
10
m
0m
op
s
s
er
--0.1
ati
on
Operation in this
area is limited by RDS(on).
7
5
3
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
Ta=75°C
--25°C
25°C
3
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
5
7
5
IT09252
3
5
7 --1.0
IT08166
PD -- Ta
0.8
M
ou
nt
ed
on
a
0.6
0.4
ce
ra
m
ic
bo
ar
d
0.2
0
3
2
--0.1
Drain Current, ID -- A
1.0
IDP= --1.6A
7 --1.0
IT08164
RDS(on) -- ID
2
--0.01
7
ASO
3
5
Drain Current, ID -- A
Allowable Power Dissipation, PD -- W
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25°C
VGS= --1.5V
--25°C
7
--0.01
Drain Current, ID -- A
Ta=75°C
7
Ta=75°C
2
2
VGS= --2.5V
2
5
3
IT09251
3
2
VGS= --4V
5
--0.01
0.9
RDS(on) -- ID
5
RDS(on) -- ID
5
VDS= --10V
ID= --0.4A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V
--4.0
0
20
40
60
80
(9
00
m
m2
✕0
.8m
m
)1
un
it
100
120
Ambient Temperature, Ta -- °C
140
160
IT09253
No.8239-4/5
MCH6629
Note on usage : Since the MCH6629 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of December, 2006. Specifications and information herein are subject
to change without notice.
PS No.8239-5/5