SANYO 3LP03SS

3LP03SS
Ordering number : EN8649
P-Channel Silicon MOSFET
3LP03SS
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance.
High-speed switching.
2.5V drive.
High resistance to damage from ESD (TYP 300V)
[with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
Gate-to-Source Voltage (*1)
VGSS
--10
V
--0.25
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
V
--1
A
0.15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
min
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=--8V, VDS=0V
--30
VDS=--10V, ID=--100µA
VDS=--10V, ID=--120mA
--0.4
Forward Transfer Admittance
VGS(off)
yfs
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--120mA, VGS=--4V
ID=--60mA, VGS=--2.5V
Input Capacitance
RDS(on)3
Ciss
ID=--10mA, VGS=--1.5V
VDS=--10V, f=1MHz
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
Conditions
IDSS
IGSS
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
0.24
typ
Unit
max
V
--1
µA
--1
µA
--1.4
V
1.5
1.9
Ω
2.0
2.8
Ω
4.0
8.0
0.4
S
40
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
Marking : XG
Ω
pF
8
pF
4.5
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83005PE MS IM TA-101198 No.8649-1/4
3LP03SS
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9.5
Rise Time
tr
td(off)
See specified Test Circuit.
5
ns
See specified Test Circuit.
15
ns
Turn-OFF Delay Time
Fall Time
tf
Qg
Total Gate Charge
ns
See specified Test Circuit.
13
ns
VDS=--10V, VGS=--4V, ID=--250mA
0.8
nC
0.3
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--250mA
VDS=--10V, VGS=--4V, ID=--250mA
Diode Forward Voltage
VSD
IS=--250mA, VGS=0V
0.2
nC
--0.9
Package Dimensions
--1.2
V
Switching Time Test Circuit
unit : mm
7029-003
VDD= --15V
VIN
0V
--4V
Top View
0.3
1.4
ID= --120mA
RL=125Ω
VIN
0.25
D
VOUT
PW=10µs
D.C.≤1%
0.8
1.4
3
2
1
G
0.1
0.3
0.2
0.45
3LP03SS
P.G
0.07
1 : Gate
2 : Source
3 : Drain
SANYO : SSFP
--0.40
--0.25
--0.20
5°C
--0.15
25°
C
--0.10
--0.05
--0.05
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
--1.0
IT07653
C
25°
--0.30
0
--0.5
--1.0
C
VGS=1.5V
--0.10
Drain Current, ID -- A
4.0
4.5
V
V
--0.15
--0.35
C
--0.45
6.0
Drain Current, ID -- A
--0.20
VDS= --10V
5°C
V
5V
2.
3.0
3.5
V
2.0V
V
--0.25
ID -- VGS
--0.50
75°
ID -- VDS
--0.30
Ta=
--2
Bottom View
Ta=
7
3
--25
°
2
1
S
0.07
0.6
50Ω
--1.5
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V
--3.0
--3.5
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No.8649-2/4
3LP03SS
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
4.0
ID=120mA
3.5
3.0
60mA
2.5
2.0
1.5
1.0
0.5
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
°C
25
5
3
0.5
--40
--20
0
20
40
60
80
100
120
140
IT07656
IS -- VSD
VGS=0V
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
2
3
5 7 --0.01
2
3
5 7 --0.1
2
3
Drain Current, ID -- A
5 7 --1.0
IT07657
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
3
--1.4
IT07658
Ciss, Coss, Crss -- VDS
60
VDS= --15V
VGS= --4V
2
50
td (off)
tf
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
1.0
3
2
2
0.01
--0.001
10
td(on)
7
tr
5
Ciss
40
30
20
10
3
2
5
3
Drain Current, ID -- A
0
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0.1
0.2
0.3
0.4
0.5
--10
0.6
Total Gate Charge, Qg -- nC
0.7
0.8
IT07661
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT08163
RDS(on) -- ID
5
VDS= --10V
ID= --0.25A
0
--5
IT07659
VGS -- Qg
--4.0
--3.5
Coss
Crss
0
2
--0.1
Gate-to-Source Voltage, VGS -- V
I D=
1.5
0V
= --4.
, VGS
mA
--120
°C
C
5°
--2
=
°C
Ta
75
7
--6
I D=
2.0
--1.0
7
5
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
3
0.1
, VG
0mA
Ambient Temperature, Ta -- °C
5
2
.5V
--2
S=
2.5
0
--60
--10
VDS= --10V
7
3.0
IT08162
yfs -- ID
1.0
--9
3.5
25°C
--25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
4.5
0
RDS(on) -- Ta
4.0
Ta=25°C
Ta=7
5
5.0
VGS= --4V
3
Ta=75°C
2
25°C
--25°C
1.0
7
5
--0.01
2
3
5
7
--0.1
2
Drain Current, ID -- A
3
5
7 --1.0
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No.8649-3/4
3LP03SS
RDS(on) -- ID
3
Ta=75°C
2
--25°C
25°C
1.0
7
--0.01
2
3
5
7
2
--0.1
3
Drain Current, ID -- A
5
7
--1.0
IT08165
PD -- Ta
0.20
Allowable Power Dissipation, PD -- W
RDS(on) -- ID
7
VGS= --2.5V
VGS= --1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5
5
Ta=75°C
--25°C
25°C
3
2
--0.01
2
3
5
7
--0.1
2
3
5
Drain Current, ID -- A
7 --1.0
IT08166
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07665
Note on usage : Since the 3LP03SS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2005. Specifications and information herein are subject
to change without notice.
PS No.8649-4/4