Ordering number:ENN6390 N-Channel Silicon MOSFET FW204 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2129 [FW204] 8 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 0.2 1.8max 1 6.0 4.4 · Low ON resistance. · Ultrahigh-speed switching. · Composite type with 2 N-channel MOSFETs driving from a 2.5V supply voltage contained in a single package, facilitating high-density mounting. · Matched pair capability. 0.3 Features Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 20 V ±10 V 2 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation Mounted on a ceramic board (1200mm2×0.8mm) 1unit Total Dissipation PD PT 1.8 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1200mm2×0.8mm) 8 A 1.6 W Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=1mA, VGS=0 VDS=20V, VGS=0 IGSS VGS(off) VGS=±8V, VDS=0 | yfs | Static Drain-to-Source On-State Resistance Conditions RDS(on)1 RDS(on)2 VDS=10V, ID=1mA VDS=10V, ID=1A Ratings min typ max 20 V 100 µA ±10 µA 1.5 V 140 200 mΩ 200 320 mΩ 0.5 1.8 ID=1A, VGS=4V ID=0.5A, VGS=2.5V Marking : W204 Unit 2.8 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2642 No.6390-1/4 FW204 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=10V, f=1MHz 170 pF Output Capacitance Coss 145 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 50 pF Turn-ON Delay Time td(on) See specified Test Circuit 15 ns tr See specified Test Circuit 20 ns td(off) See specified Test Circuit 50 ns tf See specified Test Circuit 35 ns Qg VDS=10V, VGS=10V, ID=2A 7.6 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=2A VDS=10V, VGS=10V, ID=2A 0.9 Gate-to-Drain "Miller" Charge 1.1 nC Diode Forward Voltage VSD IS=2A, VGS=0 0.8 Switching Time Test Circuit 1.2 V Electrical Connection VDD=10V 4V 0V VIN PW=10µs D.C.≤1% ID=1A RL=10Ω VIN D1 D1 D2 D2 S1 G1 S2 G2 VOUT D G P.G 50Ω FW204 S ID -- VDS C 25° 2.0V 1.2 1.8V 0.8 Drain Current, ID – A 1.2V 2 1 °C --2 5°C 1.6V 0.4 3 Ta =7 5 Drain Current, ID – A VDS=10V V .2 2 1.6 1.4V 0 0 0 0.4 0.8 1.2 1.6 Drain-to-Source Voltage, VDS – V 2.0 0.4 0.8 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 240 ID=0.5A 1.0A 160 120 80 40 0 1.2 1.6 2.0 2.4 Gate-to-Source Voltage, VGS – V 2.8 IT00597 RDS(on) -- ID 1000 280 200 0 IT00596 RDS(on) -- VGS 320 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ ID -- VGS 4 V 2.4 4.0V 2.6V 2.0 (Top view) 7 5 3 VGS=2.5V 2 4.0V 100 7 5 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS – V 9 10 11 IT00598 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID – A 2 3 5 7 IT00599 No.6390-2/4 FW204 RDS(on) -- Ta 280 240 =2.5A A, V GS I D=0.5 =4.0A A, V GS .0 1 = ID 200 160 120 80 40 0 --60 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – ˚C VDS=10V 7 5 3 2 5 --2 1.0 °C = Ta 7 25 C 5° 5 °C 7 3 2 0.1 7 7 0.01 160 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID – A IT00600 IF -- VSD 7 5 yfs -- ID 10 Forward Transfer Admittance, | yfs | – S Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 320 5 7 IT00601 Ciss, Coss, Crss -- VDS 1000 f=1MHz 7 3 5 Ciss, Coss, Crss – pF 1.0 7 5 3 2 0.1 7 5 2 Ciss 100 Coss 0.01 0 0.2 0.4 0.6 0.8 1.2 1.0 Diode Forward Voltage, VSD – V 10 1.4 VDD=10V VGS=4V 100 7 tr 5 tf 3 td(off) 2 td(on) 10 12 20 16 IT00603 VGS -- Qg VDS=10V ID=2A 9 8 7 6 5 4 3 2 0 2 0.1 3 5 7 2 1.0 3 Drain Current, ID – A 5 0 ID=2A DC 1.0 7 5 100µs 1m s 10 ms 10 0m s op era tio Operation in this area is limited by RDS(on). n Ta=25°C Single pulse 1 unit 0.01 Mounted on 2 3 0.1 a ceramic board (1200mm2×0.8mm) 5 7 1.0 2 3 5 2 7 10 Drain-to-Source Voltage, VDS – V 2 3 5 IT00605 3 4 5 6 7 Total Gate Charge, Qg – nC Allowable Power Dissipation (FET1), PD – W ≤10µs IDP=8A 1 IT00604 ASO 2 Drain Current, ID – A 8 1 7 3 2 4 10 5 0.1 7 5 0 Drain-to-Source Voltage, VDS – V 7 3 2 Crss IT00602 SW Time -- ID 2 3 2 5 2 25°C --25°C Ta=75 °C 2 10 7 5 7 3 3 Switching Time, SW Time – ns 3 Gate-to-Source Voltage, VGS – V Forward Current, IF – A 2 8 IT00660 PD(FET1) -- PD(FET2) 2.0 M 1.6 ou nte do na ce ram 1.2 ic bo ard (1 20 0m 0.8 m2 ×0 .8m 0.4 m) 1u nit 0 0 0.4 0.8 1.2 1.6 2.0 Allowable Power Dissipation (FET2), PD – W IT00606 No.6390-3/4 FW204 PD -- Ta Allowable Power Dissipation, PD – W 2.0 Mounted on a ceramic board (1200mm2×0.8mm) 1.8 1.6 To ta 1.2 lD iss 1 ip un it 0.8 at io n 0.4 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT00607 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6390-4/4