2N4014 HIGH-VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT (300 MHz) and tight control on storage time. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 80 V V CES Collector-emitter Voltage (V BE = 0) 80 V V CEO Collector-emitter Voltage (I B = 0) 50 V V EBO Emitter-base Voltage (I C = 0) 6 V Collector Current 1 A 0.36 1.2 W W – 65 to 200 °C IC Pt o t T s t g, T j October 1988 Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature 1/6 2N4014 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 146 486 ELECTRICAL CHARACTERISITCS(T a mb = 25 °C unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit 1.7 120 µA µA Collector Cutoff Current (I E = 0) V CB = 60 V V CB = 60 V V( BR)CB O Collector-base Breakdown Voltage (I E = 0) I C = 10 µA 80 V V (B R)CES Collector-emitter Breakdown Voltage (V BE = 0) I C =10 µA 80 V V (BR)CE O * Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA 50 V V (B R)E BO Emitter-Base Breakdown Voltage (I C = 0) I E =10 µA 6 V V CE( sat )* Collector-Emitter Saturation Voltage IC IC IC IC IC IC = 10 mA = 100 mA = 300 mA = 500 mA = 800 mA = 1000 mA IB IB IB IB IB IB =1 mA =10 mA = 30 mA = 50 mA = 80 mA = 100 mA 0.19 0.21 0.31 0.4 0.5 0.6 0.25 0.26 0.4 0.52 0.8 0.95 V V V V V V V BE( sat )* Base-Emitter Saturation Voltage IC IC IC IC IC IC = 10 mA = 100 mA = 300 mA = 500 mA = 800 mA = 1000 mA IB IB IB IB IB IB = = = = = = 0.64 0.75 0.89 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V IC IC IC IC IC IC = 10 mA = 100 mA = 300 mA = 1000 mA = 800 mA = 500 mA V CE V CE V CE V CE V CE V CE h F E* hfe DC Current Gain 1 mA 10 mA 30 mA 50 mA 80 mA 100 mA =1 =1 =1 =5 =2 =1 V V V V V V 0.9 1.0 1.1 30 60 40 25 20 35 60 90 60 65 40 150 High Frequency Current Gain I C = 50 mA f = 100 MHz V CE = 10 V C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V 10 pF C EBO Emitter-base Capacitance IC = 0 f = 1 MHz V E B = 0.5 V 55 pF t o n ** Turn-on Time I C = 500 mA V CC = 30 V I B = 50 mA 35 ns t o f f** Turn-off Time I C = 500 mA V CC = 30 V I B1 = – I B2 = 50 mA 60 ns * Pulsed : pulse duration = 300 ms, duty cycle = 1 %. ** See test circuit. 2/6 T amb = 100 °C 3 2N4014 DC Current Gain. Collector-emitter Saturation Voltage. Base-emitter Saturation Voltage. Contours of Constant Transition Frequency. Switching Characteristics. Switching Characteristics. 3/6 2N4014 Test Circuit for ton, toff. PULSE GENERATOR : tr, tf < 1.0 ns PW ≈ 1.0 µs ZIN = 50 Ω DC < 2 % 4/6 TO OSCILLOSCOPE : tr ≈ 1.0 ns ZIN > 100 KΩ 2N4014 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 5/6 2N4014 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6