2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 3 1 2 TO-220 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) Value Unit 2N6107 2N6111 80 40 V V CEX Collector-Emitter Voltage (R BE = 100 Ω) 80 40 V V CEO Collector-Emitter Voltage (I B = 0) 70 30 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 7 A IB Base Current 3 A o P tot Total Dissipation at T c = 25 C T stg Storage Temperature Tj Max. Operating Junction Temperature 40 W -65 to 150 o C 150 o C For PNP devices voltage and current values are negative June 1997 1/4 2N6107/2N6111 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 3.12 o C/W 70 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = - 1.5V) Test Conditions for for TC for for 2N6107 2N6111 o = 150 C 2N6107 2N6111 I CEO Collector Cut-off Current (I B = 0) for 2N6107 for 2N6111 I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-emitter Sustaining Voltage I C = 0.1 A for 2N6107 for 2N6111 V CER(sus) ∗ Collector-emitter Sustaining Voltage I C = 0.1 A for 2N6107 for 2N6111 V CE(sat) ∗ Collector-emitter Saturation Voltage IC = 3 A IC = 2 A IC = 7 A V BE(on) ∗ Base-emitter Voltage IC = 3 A IC = 2 A IC = 7 A DC Current Gain IC = 3 A IC = 2 A IC = 7 A hfe Small Signal Current Gain I C = 0.5 A fT Transition-Frequency Collector-base Capacitance h FE ∗ C cbo Min. Typ. Unit 0.1 0.1 mA mA V CE = 70 V V CE = 30 V 2 2 mA mA V CE = 60 V V CE = 20 V 1 1 mA mA 1 mA 70 30 V V 80 40 V V R BE = 100 Ω for 2N6107 for 2N6111 1 1 3.5 V V V V CE = 4 V V CE = 4 V V CE = 4 V for 2N6107 for 2N6111 1.5 1.5 3 V V V V CE = 4 V V CE = 4 V V CE = 4 V for 2N6107 for 2N6111 30 30 2.3 f = 50 KHz 20 I C = 0.5 A V CE = 4 V 4 V CB = 10 V f = 1 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. For PNP types voltage and current values are negative. For characteristic curves see the bd534 (PNP) series. 2/4 Max. V CE = 80 V V CE = 40 V I B = 0.3 A I B = 0.2 A I B = 3.0 A V CE = 4 V 150 150 MHz 250 pF 2N6107/2N6111 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 2N6107/2N6111 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4