STMICROELECTRONICS BFY51

BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BFY50
BFY51
V CBO
Collector-Base Voltage (IE = 0)
80
60
V
V CEO
Collector-Emitter Voltage (I B = 0)
35
30
V
V EBO
Emitter-Base Voltage (I C = 0)
6
V
Collector Current
1
A
IC
I CM
Collector Peak Current (tp < 5 ms)
P t ot
Total Dissipation at T amb ≤ 25 C
at T case ≤ 25 o C
T stg
St orage Temperature
Tj
o
Max. Operating Junction Temperature
November 1997
1.5
A
0.8
5
W
W
-65 to 200
o
C
200
o
C
1/5
BFY50/BFY51
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
35
218
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CBO
I EBO
Parameter
Collector Cut-off
Current (IE = 0)
Test Cond ition s
for BFY50
V CB = 60 V
V CB = 60 V
for BFY51
V CB = 40 V
V CB = 40 V
Min.
Typ .
Max.
Un it
o
50
2.5
nA
µA
o
50
2.5
nA
µA
50
2.5
nA
µA
T ca s e = 100 C
T ca s e = 100 C
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V EB = 5 V
Collector-Base
Breakdown Voltage
(IE = 0)
I C = 100 µA
for BFY50
for BFY51
80
60
V
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 30 mA
for BFY50
for BFY51
35
30
V
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I C = 100 µA
6
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 150 mA
for BFY50
for BFY51
IC = 1 A
for BFY50
for BFY51
V (BR)CBO
V BE(s at)∗
h FE∗
hfe ∗
fT
C CBO
Base-Emitter
Saturation Voltage
I C = 150 mA
IC = 1 A
DC Current G ain
for BFY50
I C = 10 mA
I C = 150 mA
I C = 1A
for BFY51
I C = 10 mA
I C = 150 mA
I C = 1A
Small Signal Current
Gain
Transition F requency
Collector Base
Capacitance
I B = 15 mA
I B = 15 mA
I B = 0.1 A
0.2
0.35
V
V
0.7
0.7
1
1.6
V
V
0.95
1.5
1.3
2
V
V
V CE = 10 V
V CE = 10 V
V CE = 10 V
20
30
15
40
55
30
V CE = 10 V
V CE = 10 V
V CE = 10 V
30
40
15
55
70
40
f = 1KHz
I C = 50 mA
for BFY50
for BFY51
VCE = 10 V
IE = 0
0.14
0.14
I B = 0.1 A
V CE = 6 V
I C = 1 mA
for BFY50
for BFY51
I C = 10 mA
for BFY50
for BFY51
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/5
T case = 100 oC
25
30
45
60
V CB = 10 V
60
50
f = 1MHz
100
110
MHz
MHz
10
pF
BFY50/BFY51
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
hie
hre
h oe
Parameter
Input Impedance
Reverse Voltage Ratio
Output Admittance
Test Cond ition s
I C = 10 mA
for BFY50
for BFY51
VCE = 5 V
I C = 10 mA
for BFY50
for BFY51
VCE = 5 V
I C = 10 mA
for BFY50
for BFY51
VCE = 5 V
Min.
Typ .
f = 1KHz
Max.
Un it
180
220
Ω
Ω
55
70
10
10 -6
30
35
µS
µS
f = 1KHz
f = 1KHz
-6
td
Delay Time
I C = 150 mA
I B1 = 15 mA
VCC = 10 V
V BE = -2 V
15
ns
tr
Rise Time
I C = 150 mA
I B1 = 15 mA
VCC = 10 V
V BE = -2 V
40
ns
ts
Storage Time
I C = 150 mA
VCC = 10 V
I B1 = -IB2 = 15 mA
300
ns
tf
Fall T ime
I C = 150 mA
VCC = 10 V
I B1 = -IB2 = 15 mA
60
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
3/5
BFY50/BFY51
TO-39 MECHANICAL DATA
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
12.7
TYP.
MAX.
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
45o (typ.)
L
D
A
G
I
E
F
H
B
L
P008B
4/5
BFY50/BFY51
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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