BC177 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 is a silicon planar epitaxial PNP transistors in TO-18 metal case. It is suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The NPN complement is BC107. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) -50 V V CEO Collector-Emitter Voltage (I B = 0) -45 V V EBO Emitter-Base Voltage (I C = 0) IC I CM Parameter Collector Current Collector Peak Current o P t ot Total Dissipation at T amb ≤ 25 C T stg St orage Temperature Tj Max. Operating Junction Temperature November 1997 -5 V -100 mA -200 mA 0.3 W -65 to 175 o C 175 o C 1/6 BC177 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 200 500 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Test Cond ition s Min. Typ . Max. Un it -1 -100 -10 nA µA Collector Cut-off Current (V BE = 0) V CE =-20 V V CE =-20 V Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 µA -50 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -2 mA -45 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -10 µA -5 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -10 mA I C = -100 mA I B = -0.5 mA IB = -5 mA -75 -200 V BE(s at)∗ Base-Emitter Saturation Voltage I C = -10 mA I C = -100 mA I B = -0.5 mA IB = -5 mA -720 -860 V BE(on) ∗ Base-Emitter O n Voltage I C = -2 mA VCE = -5 V Small Signal Current Gain I C = -2 mA Gr. A Gr. B Transition F requency I C = -10 mA V CE = -5 V f = 100 MHz Collector Base Capacitance IE = 0 NF Noise Figure I C = -0.2 mA V CE = -5 V f = 1KHz R g = 2KΩ B = 200Hz hie Input Impedance I C = -2 mA Gr. A Gr. B V CE = -5 V I C = -2 mA Gr. A Gr. B V CE = -5 V I C = -2 mA Gr. A Gr. B V CE = -5 V V (BR)CES hfe ∗ fT C CBO hre h oe Reverse Voltage Ratio Output Admittance ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/6 Tamb = 150 o C V CE = -5 V -550 -250 mV mV mV mV -640 -750 125 240 260 500 mV f = 1KHz V CB = -10 V 200 MHz 5 pF 2 10 dB f = 1KHz 2.7 5.2 KΩ KΩ 2.7 4.5 10 -4 10 25 35 µS µS f = 1KHz -4 f = 1KHz BC177 DC Transconductance. DC Normalized Current Gain. Collector-emitter Saturation Voltage. Normalized h Parameters. Normalized h Parameters. Collector-base Capacitance. 3/6 BC177 Transition Frequency. 4/6 Power Rating Chart. BC177 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 5/6 BC177 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6