2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Products approved to CECC 50002-104 available on request. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-base Voltage (I E = 0) 75 V V CER Collector-emitter Voltage (R BE ≤ 10 Ω) 50 V V EBO Emitter-base Voltage (I C = 0) IC Pt o t T s t g, T j January 1989 Parameter 7 V Collector Current 500 mA Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C 0.8 3 1.7 W W W – 65 to 200 °C Storage and Junction Temperature 1/5 2N1613-2N1711 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 58 219 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter I CBO Collector Cutoff Current (I E = 0) V CB = 60 V V CB = 60 V I E BO Emitter Cutoff Current (I C = 0) V EB = 5 V V ( BR) CBO V (BR)CE R * V ( BR) EBO V CE (s at )* V BE (s at ) h F E* h F E* hfe ft * Test Conditions Typ. Max. Unit T am b = 150 °C 10 10 nA µA for 2N 16 13 for 2N 17 11 10 5 nA nA Collector-base Breakdown I C = 0.1 mA Voltage 75 V Collector-emitter Breakdown Voltage (R B E ≤ 10 Ω) I C = 10 mA 50 V Emitter-base Breakdown Voltage (I C = 0) I E = 0.1 mA 7 V Collector-emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.5 1.5 V Base-emitter Saturation Voltage I C = 150 mA I B = 15 mA 0.95 1.3 V for 2 N16 13 I C = 0.01 mA I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 10 mA T amb = –55 °C V CE V CE V CE V CE V CE V CE for 2 N17 11 I C = 0.01 mA I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA I C = 10 mA T amb = 55 °C V CE V CE V CE V CE V CE V CE DC Current Gain DC Current Gain Small Signal Current Gain for 2 N16 13 I C = 1 mA f = 1 kHz for 2 N17 11 I C = 1 mA f = 1 kHz Transition Frequency I C = 50 mA f = 20 MHz = = = = = = = = = = = = 10 10 10 10 10 10 10 10 10 10 10 10 V V V V V V V V V V V V 20 35 40 20 35 50 80 80 55 20 35 20 35 60 80 130 130 75 120 300 65 V CE = 10 V 30 70 150 70 135 300 60 70 80 100 V CE = 10 V V CE = 10 V for 2N 16 13 for 2N 17 11 MHz MHz C EBO Emitter-base Capacitance IC = 0 f = 1 MHz V EB = 0.5 V 50 80 pF C CBO Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V 18 25 pF * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/5 Min. 2N1613-2N1711 ELECTRICAL CHARACTERISTICS (continued) Symbol NF h ie hre hoe Parameter Noise Figure Input Impedance Reverse Voltage Ratio Output Admittance Test Conditions Typ. Max. Unit V CE = 10 V f = 1 kHz for 2N 16 13 for 2N 17 11 6 3.5 12 8 dB dB I C = 1 mA f = 1 KHz V CE = 5 V for 2N 16 13 for 2N 17 11 2.2 4.4 I C = 1 mA f = 1 kHz V CE = 5 V for 2N 16 13 for 2N 17 11 3.6x10– 4 7.3x10– 4 I C = 1 mA f = 1 kHz V CE = 5 V for 2N 16 13 for 2N 17 11 12.5 23.8 I C = 0.3 mA R 9 = 510 Ω Min. kΩ kΩ µS µS * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 3/5 2N1613-2N1711 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 2N1613-2N1711 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5