STMICROELECTRONICS BUH1215

BUH1215

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
DESCRIPTION
The
BUH1215
is
manufactured
using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V CBO
Collector-Base Voltage (I E = 0)
1500
V
V CEO
Collector-Emitter Voltage (IB = 0)
700
V
V EBO
Emitter-Base Voltage (IC = 0)
10
V
Collector Current
16
A
Collector Peak Current (tp < 5 ms)
22
A
9
A
IC
I CM
IB
Parameter
Base Current
I BM
Base Peak Current (tp < 5 ms)
P t ot
Total Dissipation at Tc = 25 C
T stg
St orage Temperature
Tj
o
Max. Operating Junction Temperature
January 1999
12
A
200
W
-65 to 150
o
C
150
o
C
1/7
BUH1215
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
0.63
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
0.2
2
mA
mA
100
µA
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
Collector-Emitter
Sustaining Voltage
I C = 100 mA
700
V
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
10
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 12 A
IB = 2.4 A
1.5
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
I C = 12 A
IB = 2.4 A
1.5
V
DC Current Gain
I C = 12 A
I C = 12 A
I EBO
V CEO(sus)
V EBO
h F E∗
o
Tj = 125 C
VCE = 5 V
VCE = 5 V
ts
tf
RESISTIVE LO AD
Storage Time
Fall Time
V CC = 400 V
I B1 = 2 A
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
I C = 12 A
I B1 = 2 A
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 6 A
I B1 = 1 A
o
Tj = 100 C
I C = 12 A
I B2 = -6 A
f = 31250 Hz
I B2 = -1.5 A
 π 6
V c eflybac k = 1050 sin  10  t V
5

f = 64 KHz
V BE(off ) = -2 A
π

V c eflybac k = 1200 sin  106 t V
5


∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/7
Thermal Impedance
7
5
10
14
1.5
110
µs
ns
4
220
µs
ns
3.5
180
µs
ns
BUH1215
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 64 KHz
Switching Time Inductive Load at 64 KHz
(see figure 2)
3/7
BUH1215
Reverse Biased SOA
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided the
transistor to turn off (retrace phase).
Most of the dissipation, especially in the
deflection application, occurs at switch-off so it is
essential to determine the value of IB2 which
minimizes power losses, fall time tf and,
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a
function of IB1 at 64 KHz scanning frequencies for
4/7
choosing the optimum negative drive. The test
circuit is illustrated in figure 1.
The values of L and C are calculated from the
following equations:
1
1
L (IC)2 = C (VCEfly)2
2
2
1
ω = 2 πf =
L C

√
Where IC = operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BUH1215
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/7
BUH1215
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
¯
R
6/7
1
2
3
P025A
BUH1215
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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