STMICROELECTRONICS STN851

STN851
®
LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
■
■
■
■
Ordering Code
Marking
Shipment
STN851
N851
Tape & Reel
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
HIGH CURRENT GAIN CHARACTERISTIC
FAST-SWITCHING SPEED
SURFACE-MOUNTING SOT-223 MEDIUM
POWER PACKAGE IN TAPE & REEL
APPLICATIONS:
EMERGENCY LIGHTING
■ VOLTAGE REGULATORS
■ RELAY DRIVERS
■ HIGH EFFICIENCY LOW VOLTAGE
SWITCHING APPLICATIONS
■
2
1
2
3
SOT-223
DESCRIPTION
The device is manufactured in NPN Planar
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CBO
Collector-Base Voltage (I E = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
I BM
Collector Current
Unit
150
V
60
V
7
V
5
A
10
A
Base Current
1
A
Base Peak Current (t p < 5 ms)
2
A
Collector Peak Current (t p < 5 ms)
o
P tot
Total Dissipation at T amb = 25 C
T stg
Storage Temperature
Tj
Value
Max. Operating Junction Temperature
September 2003
1.6
W
-65 to 150
o
C
150
o
C
1/7
STN851
THERMAL DATA
R thj-amb
Thermal Resistance Junction-ambient
• Device mounted on a P.C.B. area of 1 cm
Max
o
78
C/W
2
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
50
1
nA
µA
10
nA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 120 V
V CB = 120 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 7 V
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 100 µA
150
V
I C = 10 mA
60
V
7
V
V (BR)CBO
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 100 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
V BE(sat) ∗
Base-Emitter
Saturation Voltage
V BE(on) ∗
h FE ∗
fT
C CBO
t on
ts
tf
T j = 100 o C
I B = 5 mA
I B = 50 mA
I B = 50 mA
I B = 200 mA
10
70
140
320
50
120
250
500
mV
mV
mV
mV
IC = 4 A
I B = 200 mA
1
1.15
V
Base-Emitter On
Voltage
IC = 4 A
V CE = 1 V
0.89
1
V
DC Current Gain
IC
IC
IC
IC
V CE = 1 V
V CE = 1 V
V CE = 1 V
V CE = 1 V
=
=
=
=
=
=
=
=
100 mA
1A
2A
5A
10 mA
2A
5A
10 A
150
150
90
30
300
270
140
50
350
Transition frequency
V CE = 10 V
I C = 100 mA
130
MHz
Collector-Base
Capacitance
V CB = 10 V
f = 1 MHz
50
pF
IC = 1 A
I B1 = - I B2 = 0.1 A
V CC = 10 V
50
1.35
120
ns
µs
ns
RESISTIVE LOAD
Turn- on Time
Storage Time
Fall Time
* Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
2/7
Min.
STN851
Derating Curve
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
3/7
STN851
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Inductive Load
Switching Times Inductive Load
4/7
STN851
Figure 1: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
STN851
SOT-223 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
1.80
MAX.
0.071
B
0.60
0.70
0.80
0.024
0.027
0.031
B1
2.90
3.00
3.10
0.114
0.118
0.122
c
0.24
0.26
0.32
0.009
0.010
0.013
D
6.30
6.50
6.70
0.248
0.256
0.264
e
2.30
0.090
e1
4.60
0.181
E
3.30
3.50
3.70
0.130
0.138
0.146
H
6.70
7.00
7.30
0.264
0.276
0.287
10o
V
A1
10o
0.02
P008B
6/7
STN851
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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