STE50DE100 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1000 V - 50 A - 0.026 W POWER MODULE Figure 1: Package Table 1: General Features n n n n n VCS(ON) IC RCS(ON) 1.3 V 50 A 0.026 W HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz ULTRA LOW CISS LOW DYNAMIC VCS(ON) APPLICATION n INDUSTRIAL CONVERTERS n WELDING DESCRIPTION The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STE50DE100 is designed for use in industrial converters and/or welding equipment. ISOTOP Figure 2: Internal Schematic Diagram Electrical Symbol Device Structure Table 2: Order Code Part Number Marking Package Packaging STE50DE100 STE50DE100 ISOTOP TUBE October 2004 Rev. 1 1/9 STE50DE100 Table 3: Absolute Maximum Ratings Symbol Parameter VCS(SS) Collector-Source Voltage (VBS = VGS = 0 V) VBS(OS) Base-Source Voltage (IC= 0, VGS = 0 V) VSB(OS) Source-Base Voltage (IC= 0, VGS = 0 V) VGS IC ICM IB Value Unit 1000 V 40 V 12 V ± 20 V Collector Current 50 A Collector Peak Current (tp < 5ms) 150 A Base Current 10 A Gate-Source Voltage IBM Base Peak Current (tp < 1ms) 50 A Ptot Total Dissipation at TC ≤ 25 oC 160 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Insulation Withstand Voltage (AC-RMS) from All Four Leads to External Heatsink 2500 V 0.78 oC/W 0.05 oC/W VISO Table 4: Thermal Data Rthj-case Rthc-h Thermal Resistance Junction-Case Max Thermal Resistance Case-heatsink with Conductive Grease Applied Max Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-Source Current (VBS = VGS = 0 V) VCS(SS) = 1000 V 100 mA IBS(OS) Base-Source Current VBS(OS) = 40 V 10 mA VSB(OS) = 10 V 100 mA 500 nA (IC = 0 , VGS = 0 V) ISB(OS) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage VGS = ± 20 V VCS(ON) Collector-Source ON Voltage IC = 50 A IB = 10 A VGS = 10 V 1.3 V IC = 30 A IB = 3 A VGS = 10 V 1.1 V hFE DC Current Gain (see figure 14) IC = 50 A VCS = 1 V VGS = 10 V 3 7 6 13 IC = 50 A VCS = 1 V VGS = 10 V IB = 10 A VGS = 10 V IC = 30 A IB = 3 A IC = 30 A VBS(ON) Base-Source ON Voltage VGS(th) Ciss VGS = 10 V 3 2.2 V 1.4 V Gate Threshold Voltage VBS = VGS IB = 250 mA Input Capacitance VCS = 25 V f = 1MHZ 2500 3.7 4.5 pF V VCS = 25 V VGS = 10 V 60 nC VCB = 0 IC = 50 A VGS = VCB = 0 QGS(tot) Gate-Source Charge 2/9 STE50DE100 Symbol Parameter Test Conditions INDUCTIVE LOAD VGS = 10 V VClamp = 800 V ts Storage Time RG = 47 W tp = 4 ms tf Fall Time IC = 25 A IB = 5 A (see figure 15) INDUCTIVE LOAD VGS = 10 V VClamp = 800 V ts Storage Time RG = 47 W tp = 4 ms tf Fall Time IC = 25 A IB = 2.5 A (see figure 15) Maximum Collector-Source RG = 47 W hFE = 5 A IC = 35 A Voltage without Snubber VCS(dyn) Collector-Source Dynamic VCC = VClamp = 300 V VGS = 10 V Voltage RG = 47 W IB = 5 A (500 ns) IBpeak = IC = 25 A tpeak = 500 ns VCSW VCS(dyn) Collector-Source Dynamic Voltage (1ms) Min. VCC = VClamp = 300 V RG = 47 W IBpeak = IC = 25 A VGS = 10 V Typ. Max. Unit 0.65 ms 10 ns 0.43 ms 6 ns 1000 V 5.5 V 4.8 V IB = 5 A tpeak = 500 ns 3/9 STE50DE100 Figure 3: Output Characteristics Figure 6: Gate Threshold Voltage vs Temperature Figure 4: Reverse Biased Safe Operating Area Figure 7: Dynamic Collector-Emitter Saturation Voltage Figure 5: DC Current Gain 4/9 STE50DE100 Figure 8: Collector-Source On Voltage Figure 11: Collector-Source On Voltage Figure 9: Base-Source On Voltage Figure 12: Base-Source On Voltage Figure 10: Inductive Load Switching Time Figure 13: Inductive Load Switching Time 5/9 STE50DE100 Figure 14: Static VCS(ON) Test Circuit Figure 15: Inductive Load Switching and RBSOA Test Circuit Figure 16: Inductive Load Turn-on Switching and Dynamic VCS(ON) Test Circuit 6/9 STE50DE100 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 0.157 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 8.2 0.307 0.322 A G B O F E H D N J K C L M 7/9 STE50DE100 Table 6: Revision History 8/9 Date Release 06-Oct-2004 1 Change Designator First Release. STE50DE100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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