STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STL28NF3LL 30 V < 0.0065 Ω 28 A ■ ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance. PowerFLAT™(5x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC CONVERTERS ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 16 V ID(#) Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C 28 17.5 A A IDM () Drain Current (pulsed) 112 A PTOT Total Dissipation at TC = 25°C 80 W 0.64 W/°C 2 J –55 to 150 °C Derating Factor EAS (1) Tstg Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area (#) Limited by Wire Bonding November 2002 (1) Starting Tj = 25°C, ID = 14A, VDD = 18V 1/6 STL28NF3LL THERMAL DATA Rthj-case Rthj-pcb (#) Thermal Resistance Junction-case Max 1.56 °C/W Thermal Resistance Junction-ambient Max 31.2 °C/W (*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec. ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16V V(BR)DSS Min. Typ. Max. 30 Unit V 1 VDS = Max Rating, TC = 125 °C µA 10 µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 14 A 0.0055 0.0065 Ω VGS = 4.5 V, ID = 14A 0.0065 0.0095 Ω Typ. Max. Unit 1 V DYNAMIC Symbol gfs (1) 2/6 Parameter Test Conditions Forward Transconductance VDS = 15 V, ID = 14 A Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Coss Crss Min. 32 S 2780 pF Output Capacitance 890 pF Reverse Transfer Capacitance 195 pF STL28NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 15 V, ID = 14 A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 15 V, ID = 28 A, VGS = 5 V Typ. Max. Unit 25 ns 82 ns 32 13 18 43 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 15 V, ID = 14 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) 42 35 ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 28 A Source-drain Current (pulsed) 112 A Forward On Voltage ISD = 28 A, VGS = 0 Reverse Recovery Time Reverse Recovery ChargeReverse Recovery Current ISD = 28 A, di/dt = 100A/µs, VDD = 25 V, Tj = 150°C (see test circuit, Figure 5) Min. Typ. 1.2 50 82 3.3 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STL28NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STL28NF3LL PowerFLAT™(5x5) MECHANICAL DATA mm. DIM. MIN. TYP MAX. A 0.90 A1 MIN. TYP. MAX. 1.00 0.035 0.039 0.02 0.05 0.001 0.002 b 0.43 0.51 0.58 0.017 0.020 0.023 c 0.33 0.41 0.48 0.013 0.016 0.019 D 5.00 0.197 E 5.00 0.197 E2 e 5/6 inch 3.10 3.18 1.27 3.25 0.122 0.125 0.050 0.128 STL28NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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