STPS80L15TV LOW DROP OR-ing POWER SCHOTTKY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V K2 A2 K1 A1 K2 FEATURES AND BENEFITS VERY LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED HEATSINK INSULATED PACKAGE: Insulated voltage = 2500 V (RMS) Capacitance = 45 pF A2 K1 A1 DESCRIPTION Dual Schottky rectifier suited for Switched Mode Power Supplies and DC to DC power converters. Packaged in ISOTOPTM, this device is especially intended for use as an OR-ing diode in fault tolerant power supply equipments. ISOTOPTM ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 15 V IF(RMS) RMS forward current 100 A IF(AV) Average forward current Tc = 110°C δ=1 40 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 700 A IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz 2 A Tstg Storage temperature range - 65 to + 150 °C 125 °C 10000 V/µs Tj dV/dt * : Maximum operating junction temperature Critical rate of rise of reverse voltage 1 dPtot thermal runaway condition for a diode on its own heatsink < Rth(j−a) dTj ISOTOP is a trademark of STMicroelectronics July 1999 - Ed: 4A 1/4 STPS80L15TV THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Per diode Rth (c) Value Unit 1 °C/W Total 0.55 Coupling 0.1 STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Min. Tj = 100°C VR = 5V Tj = 25°C VR = 12V Forward voltage drop Pulse test : Max. 280 mA 0.44 Tj = 25°C IF = 40 A Tj = 125°C IF = 40 A Unit 11 Tj = 100°C VF * Typ. 0.28 1.1 A 0.43 V 0.33 * tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation : P = 0.19 x IF(AV) + 3.25 10-3 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 14 δ = 0.05 12 δ = 0.1 δ = 0.2 δ = 0.5 10 δ =1 8 6 4 T 2 0 Fig. 2: Average forward current versus ambient temperature (δ=1, per diode). δ=tp/T IF(av) (A) 0 2/4 5 10 15 20 25 30 35 tp 40 45 45 40 35 30 25 20 15 10 5 0 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=5°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 STPS80L15TV Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse(per diode). IM(A) 500 450 400 350 300 250 200 150 100 IM 50 0 1E-3 1.0 Zth(j-c)/Rth(j-c) 0.8 0.6 δ = 0.5 Tc=50°C 0.4 δ = 0.2 Tc=75°C 0.2 t δ = 0.1 Tc=110°C t(s) δ=0.5 tp(s) Single pulse 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) 0.0 1E-4 1E-3 1E-2 1E-1 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). 10 C(nF) 1E+3 F=1MHz Tj=25°C Tj=100°C Tj=75°C 1E+2 1E+0 5 1E+1 Tj=25°C 2 1E+0 VR(V) 1E-1 0 1 2 3 4 5 6 7 8 VR(V) 1 9 10 11 12 13 14 15 1 2 5 10 20 Fig. 7: Forward voltage drop versus forward current (per diode). IFM(A) 200.0 100.0 Tj=100°C (typical values) Tj=100°C (Maximum values) 10.0 1.0 Tj=25°C (Maximum values) VFM(V) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 3/4 STPS80L15TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Ordering type Marking STPS80L15TV STPS80L15TV Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Package Weight Base qty Delivery mode ISOTOP 28g (without screws) 10 Tube Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4