STS2DNFS30L N-CHANNEL 30V - 0.09Ω - 3A SO-8 STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS RDS(on) ID 30 V < 0.11 Ω 3A IF(AV) VRRM VF(MAX) 1A 30 V 0.46 V DESCRIPTION This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Value Unit 30 V 30 V ± 15 V ID Drain Current (continuos) at TC = 25°C 3 A ID Drain Current (continuos) at TC = 100°C 1.9 A Drain Current (pulsed) 12 A Total Dissipation at TC = 25°C 2 W IDM (●) PTOT SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Value Unit Repetitive Peak Reverse Voltage Parameter 30 V RMS Forward Current 7 A IF(AV) Average Forward Current TL = 135°C δ = 0.5 1 A IFSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal 45 A IRSM Non Repetitive Peak Reverse Current tp = 100 µs 1 A dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs (•)Pulse width limited by safe operating area August 2001 1/6 STS2DNFS30L THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY Maximum 100 °C/W Tstg Tl Storage Temperature Range Junction Temperature -55 to 150 °C 150 °C (*) Mounted on FR-4 board (Steady State) MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 30 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 15 V ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A 0.09 0.11 Ω VGS = 4.5V, ID = 1.5 A 0.13 0.15 Ω Typ. Max. Unit 1 V DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Test Conditions VDS = 15 V , ID = 1.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 2.5 S 121 pF Ciss Input Capacitance Coss Output Capacitance 45 pF Crss Reverse Transfer Capacitance 11 pF STS2DNFS30L 1. ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 15 V, ID = 1.5 A RG = 4.7 Ω VGS = 4.5 V (see test circuit, Figure 3) VDD = 24 V, ID = 3 A, VGS = 4.5 V Typ. Max. Unit 19 ns 20 ns 4.5 6 nC 1.7 nC 0.9 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 15 V, ID = 1.5 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) Typ. Max. 12 8 Unit ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 3 A, di/dt = 100A/µs, VDD = 30 V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 3 A 12 A 1.2 V 19 ns 8.1 nC 0.85 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol IR(*) VF(*) Parameter Reversed Leakage Current Forward Voltage Drop Typ. Max. Unit TJ = 25 °C , VR = 30 V TJ = 125 °C , VR = 30 V Test Conditions Min. 1.5 10 10 µA mA TJ = 25 °C , IF = 1 A TJ = 125 °C , IF = 1 A 0.37 0.55 0.46 V V 3/6 STS2DNFS30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STS2DNFS30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 5/6 STS2DNFS30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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