TLPxxM/G/G-1 TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any sensitive telecom equipment requiring protection against lightning : Analog and ISDN line cards Main Distribution Frames GND TIP RING TIP RING TIP RING TIP RING TIP RING Terminal and transmission equipment Gas-tube replacement PowerSO-10TM TLPxxM DESCRIPTION The TLPxxM/G/G-1 series are tripolar transient surge arrestors used for primary and secondary protectionin sensitive telecom equipment. GND FEATURES TAB GND TRIPOLAR CROWBAR PROTECTION TIP VOLTAGE RANGE SELECTED TELECOM APPLICATIONS FOR RING D2PAK TLPxxG REPETITIVE PEAK PULSE CURRENT : IPP = 100 A (10 / 1000 µs) HOLDING CURRENT : IH = 150 mA LOW CAPACITANCE : C = 110 pF typ. LOW LEAKAGE CURRENT : IR = 5 µA max GND TAB BENEFITS No ageing and no noise. If destroyed, the TLPxxM/G/G-1 falls into short circuit, still ensuring protection. TIP GND RING I2PAK TLPxxG-1 Access to Surface Mount applications thanks to the PowerSO-10TM and D2PAK package. TM: ASD and PowerSO-10 are trademarks of ST Microelectronics. September 1998 - Ed : 3C 1/14 TLPxxM/G/G-1 COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K20 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 FIRST LEVEL BELLCORE TR-NWT-001089 SECOND LEVEL CNET I31-24 Peak Surge Voltage (V) Voltage Waveform (µs) Current Waveform (µs) Admissible Ipp (A) Necessary Resistor (Ω) 4000 10/700 5/310 100 - 4000 10/700 5/310 100 - 4000 level 4 level 4 1500 800 1000 1.2/50 10/700 1.2/50 10/160 10/560 5/320 1/20 5/310 8/20 10/160 10/560 5/320 100 100 100 200 100 25 - 2500 1000 2/10 10/1000 2/10 10/1000 500 100 - 5000 2/10 2/10 500 - 4000 0.5/700 0.8/310 100 - TYPICAL APPLICATION Primary protection module TLPxxM/G/G-1 Analog Line Card Main Distribution Frame Analog line card protection - Vbat PTC LCP1511D TLPxxM/G/G-1 LINE A RING RELAY SLIC 220nF LINE B PTC 2/14 TLPxxM/G/G-1 TYPICAL APPLICATION ISDN: U interface protection 1/2 DA108S1 TLPxxM/G/G-1 +5V R3 R4 R5 Internal circuitry Power Feeder PARAMETER MEASUREMENT INFORMATION Symbol Description IPP Peak pulse current ITSM Maximum peak on-state current IPP IR Leakage current IRM Leakage current IH IH Holding current IR IRM VRM VR VBO VBR Breakdown voltage VR Continuous reverse voltage VRM Maximum stand-off voltage VBO Breakover voltage C Capacitance ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter IPP Peak pulse current (longitudinal & transversal mode) : 10/1000 µs (open circuit voltage waveform 1 kV 10/1000 µs) 8/20 µs (open circuit voltage waveform 4 kV 1.2/50 µs) 2/10 µs (open circuit voltage waveform 2.5kV 2/10 µs) Mains power induction t = 200ms VRMS = 300V, R = 600Ω Mains power contact ITSM VRMS = 220V, R = 10Ω (Fail-Safe threshold) t = 200 ms VRMS = 220V, R = 600Ω t = 15 mn Tstg Storage temperature range Tj TL Maximum operating junction temperature Maximum lead temperature for soldering during 10 s TOP Operating temperature range Value Unit 100 250 500 0.7 A A A A 31 0.42 A A - 55 to + 150 °C 150 260 °C °C - 40 to + 85 °C 3/14 TLPxxM/G/G-1 THERMAL RESISTANCE Symbol Parameter Rth (j-c) Junction to case Rth (j-a) Junction to ambient TLPxxM TLPxxG TLPxxG-1 TLPxxM TLPxxG TLPxxG-1 Value Unit 1.0 1.0 1.0 see table page 14 see table page 14 see table page 14 °C/W °C/W ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING (Tamb = 25°C) IRM @ VRM max. Type IR @ VR C typ. max. note TLP140M/G/G-1 µA 5 V 120 µA 50 V 140 pF 35 TLP200M/G/G-1 5 180 50 200 35 TLP270M/G/G-1 5 230 50 270 35 Note : VR = 50 V bias, VRMS = 1V, F = 1 MHz. ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND (Tamb = 25°C) IRM @ VRM Type max. IR @ V R max. VBO @ IBO max. note 1 max. note 2 IH C @ VR min. typ. note 3 note 4 note 5 µA V µA V V mA mA pF pF TLP200M/G/G-1 5 5 120 180 50 50 140 200 200 290 500 500 150 150 110 110 40 40 TLP270M/G/G-1 5 230 50 270 400 500 150 110 40 TLP140M/G/G-1 Note 1: IR measured at VR guarantees V BR min > VR. Note 2: Measured at 50 Hz. Note 3: See functional holding current test circuit. Note 4: VR = 0V bias, VRMS = 1V, F = 1 MHz. Note 5: VR = 50V bias, VRMS = 1V, F = 1 MHz (TIP or RING (-) / GND (+)). 4/14 TLPxxM/G/G-1 FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT: GO-NO GO TEST R - VP VBAT = - 48 V D.U.T. Surge generator This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : IPP = 10A, 10/1000µs. - The D.U.T. will come back to the off-state within a duration of 50ms max. MARKING Package PowerSO-10 D2PAK I2PAK Types Marking TLP140M TLP200M TLP270M TLP140G TLP200G TLP270G TLP140M TLP200M TLP270M TLP140G TLP200G TLP270G TLP140G-1 TLP200G-1 TLP270G-1 TLP140G TLP200G TLP270G ORDER CODE TPL Tripolar Line Protection Breakdown Voltage 270 M - TR Packaging: -TR=tapeandreelonlyfor”M”version(600pcs) = tube (50 pcs) Package: M : Power SO10 G : D2PAK G-1 : I2PAK 5/14 TLPxxM/G/G-1 Fig. 1: Maximum peak on-state current versus pulse duration. Fig. 2: Relative variation of IH versus Tamb. ITSM(A) IH (Tamb) / IH (25°C) 100 2 90 TIP or RING vs GND 80 1.8 F=50Hz Tj initial=25°C 1.6 70 60 1.4 50 1.2 40 1 30 0.8 20 0.6 10 t(s) 0 0.01 0.1 1 10 100 1000 Fig. 3-1 :junction capacitance versus applied reverse voltage (typical values) (TLP140M/G/G-1). F=1MHz Vosc=1VRMS Tj=25°C 100 0 200 LINE / LINE 40 60 80 F=1MHz Vosc=1VRMS Tj=25°C LINE+ / GND- 50 LINE / LINE LINE- / GND+ LINE- / GND+ 20 20 VR(V) 10 20 C(pF) 100 LINE+ / GND- 50 -20 Fig. 3-2 :junction capacitance versus applied reverse voltage (typical values) (TLP200M/G/G-1). C(pF) 200 Tamb (°C) 0.4 -40 1 VR(V) 10 100 200 Fig. 3-3 :junction capacitance versus applied reverse voltage (typical values) (TLP270M/G/G-1). 10 1 10 100 200 Fig. 4: Test diagram for breakover voltage measurement. C(pF) 200 F=1MHz Vosc=1VRMS Tj=25°C 100 LINE+ / GND- 50 10 / 1000 µs 100 A surge generator VBO TIP RING VBO TIP - GND GND LINE / LINE RING LINE- / GND+ 20 VR(V) 10 TIP 1 6/14 10 100 300 TLPxxM/G/G-1 Fig. 5-1 : Breakover voltage measurement (TLP140M/G/G-1). 2.6 Fig. 5-2 : Breakover voltage measurement (TLP200M/G/G-1). Vbr/Vbr 2.6 2.4 Vbo/Vbr 2.4 TIP RING 2.2 2.2 2 2 1.8 1.8 1.6 1.6 1.4 TIP RING 1.4 TIP+ GND - 1.2 1 0.01 0.1 1 10 100 TIP+ GND - 1.2 TIP- GND + 1,000 10,000 100,000 dV/dt 1 0.01 TIP- GND + 0.1 1 10 100 1,000 10,000 100,000 dV/dt Fig. 5-3 : Breakover voltage measurement (TLP270M/G/G-1). 2.6 Vbo/Vbr 2.4 TIP RING 2.2 2 1.8 1.6 1.4 TIP+ GND - 1.2 1 0.01 TIP- GND + 0.1 1 10 100 1,000 10,000 100,000 dV/dt 7/14 TLPxxM/G/G-1 PACKAGE MECHANICAL DATA D2PAK Plastic DIMENSIONS REF. A E D L L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 FOOT-PRINT D2PAK 16.90 10.30 5.08 1.30 3.70 8.90 8/14 Inches Min. Typ. Max. Min. Typ. Max. C2 L2 Millimeters A A1 4.30 2.49 4.60 0.169 2.69 0.098 0.181 0.106 A2 0.03 0.23 0.001 0.009 B B2 0.70 C 0.45 0.60 0.017 0.024 C2 D 1.21 8.95 1.36 0.047 9.35 0.352 0.054 0.368 E 10.00 10.28 0.393 0.405 G L L2 4.88 15.00 1.27 5.28 0.192 15.85 0.590 1.40 0.050 0.208 0.624 0.055 L3 R V2 1.40 1.75 0.055 0.069 0.93 0.027 1.40 0.40 0° 0.037 0.055 0.016 8° 0° 8° TLPxxM/G/G-1 PACKAGE MECHANICAL DATA I2PAK Plastic REF. DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A A1 4.30 2.49 4.60 0.169 2.69 0.098 0.181 0.106 B B1 0.70 1.20 0.93 0.028 1.38 0.047 0.037 0.054 B2 C 1.25 0.45 C2 1.21 1.36 0.048 0.054 D e 8.95 2.44 9.35 0.352 2.64 0.096 0.368 0.104 E 10.00 10.28 0.394 0.405 L L1 13.10 3.48 13.60 0.516 3.78 0.137 0.535 0.149 L2 1.27 1.40 0.050 0.055 V V4 1.40 5° 45° 0.049 0.055 0.60 0.018 0.024 5° 45° 9/14 TLPxxM/G/G-1 PACKAGE MECHANICAL DATA Power-SO10 B 0.10 A B 10 H 6 E E3 E1 E2 1 5 SEATING PLANE e B A DETAIL ”A” C 0.25 M Q D D1 h A F SEATING PLANE A1 A1 L DETAIL ”A” a E4 REF. DIMENSIONS Millimeters Inches Min. Typ. Max. A A1 3.35 0.00 Min. Typ. 3.65 0.131 0.10 0.00 DIMENSIONS REF. Max. Inches Min. Typ. Max. 0.143 0.0039 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e F 1.25 1.35 0.0492 0.0531 H 13.80 14.40 0.543 0.567 B 0.40 0.60 0.0157 0.0236 C D 0.35 9.40 0.55 0.0137 9.60 0.370 0.0217 0.378 D1 7.40 7.60 0.291 0.299 E E1 E2 9.30 7.20 7.20 9.50 0.366 7.40 0.283 7.60 0.283 0.374 0.291 0.299 10/14 Millimeters Min. Typ. Max. h L 1.27 0.50 1.20 Q a 0.05 0.019 1.80 0.0472 1.70 0° 0.0708 0.067 8° 0° 8° TLPxxM/G/G-1 FOOT PRINT Power-SO10 MOUNTING PAD LAYOUT RECOMMENDED HEADER SHAPE Dimensions in millimeters Dimensions in millimeters SHIPPING TUBE DIMENSIONS (mm) C B A TYP A B C Length tube 18 12 0,8 532 Quantity per tube 50 Surface mount film taping : contact sales office 11/14 TLPxxM/G/G-1 SOLDERING RECOMMENDATION The soldering process causes considerable thermal stress to a semiconductor component. This has to be minimized to assure a reliable and extended lifetime of the device. The PowerSO-10 package can be exposed to a maximum temperature of 260°C for 10 seconds. However a proper soldering of the package could be done at 215°C for 3 seconds. Any solder temperature profile should be within these limits. As reflow techniques are most common in surface mounting, typical heating profiles are given in Figure 1,either for mounting on FR4 or on metal-backed boards. For each particular board, the appropriate heat profile has to be adjusted experimentally. The present proposal is just a starting point. In any case, the following precautions have to be considered : - always preheat the device - peak temperatureshould be at least 30 °C higher than the melting point of the solder alloy chosen - thermal capacity of the base substrate Voids pose a difficult reliability problem for large surface mount devices. Such voids under the package result in poor thermal contact and the high thermal resistance leads to component failures. The PowerSO-10 is designed from scratch to be solely a surfacemount package, hence symmetry in the x- and y-axis gives the package excellent weight balance. Moreover, the PowerSO-10 offers the unique possibility to control easily the flatness and quality of the soldering process. Both the top and the bottom soldered edges of the package are accessible for visual inspection (soldering meniscus). Coplanarity between the substrate and the package can be easily verified. The quality of the solder joints is very important for two reasons : (I) poor quality solder joints result directly in poor reliability and (II) solder thickness affects the thermal resistance significantly. Thus a tight control of this parameter results in thermally efficient and reliable solder joints. Fig. 1 : Typical reflow soldering heat profile Temperature (o C) 250 245 oC 215oC 200 Soldering Epoxy FR4 board 150 Preheating Cooling 100 Metal-backed board 50 0 0 40 80 120 160 200 Time (s) 12/14 240 280 320 360 TLPxxM/G/G-1 SUBSTRATES AND MOUNTING INFORMATION The use of epoxy FR4 boards is quite common for surface mounting techniques, however, their poor thermal conduction compromises the otherwise outstanding thermal performanceof the PowerSO10. Some methods to overcome this limitation are discussed below. One possibility to improve the thermal conduction is the use of large heat spreader areas at the copper layer of the PC board. This leads to a reduction of thermal resistance to 35 °C for 6 cm2 of the board heatsink (see fig. 2). Use of copper-filled through holes on conventional FR4 techniques will increase the metallization and decrease thermal resistance accordingly. Using a configurationwith 16 holes under the spreader of the package with a pitch of 1.8 mm and a diameter of 0.7 mm, the thermal resistance (junction heatsink) can be reduced to 12°C/W (see fig. 3). Beside the thermal advantage, this solution allows multi-layer boards to be used. However, a drawback of this traditional material prevents its use in very high power, high current circuits. For instance, it is not advisable to surface mount devices with currents greater than 10 A on FR4 boards. A Power Mosfet or Schottky diode in a surface mount power package can handle up to around 50 A if better substrates are used. Fig. 2 : Mounting on epoxy FR4 head dissipation by extending the area of the copper layer Copper foil FR4 board Fig. 3 : Mounting on epoxy FR4 by using copper-filled through holes for heat transfer Copper foil heatsink FR4 board heat transfer 13/14 TLPxxM/G/G-1 A new technologyavailable today is IMS - an Insulated Metallic Substrate. This offers greatly enhanced thermal characteristics for surface mount components. IMS is a substrate consisting of three different layers, (I) the base material which is available as an aluminium or a copper plate, (II) a thermal conductive dielectrical layer and (III) a copper foil, which can be etched as a circuit layer. Using this material a thermal resistance of 8°C/W 2 with 40 cm of board floating in air is achievable (see fig. 4). If even higher power is to be dissipated an external heatsink could be applied which leads to an Rth(j-a) of 3.5°C/W (see Fig. 5), assuming that Rth (heatsink-air) is equal to Rth (junctionheatsink). This is commonly applied in practice, leading to reasonable heatsink dimensions. Often power devices are defined by considering the maximum junction temperature of the device. In practice , however, this is far from being exploited. A summary of various power management capabilities is made in table 1 based on a reasonable delta T of 70°C junction to air. The PowerSO-10 concept also represents an attractive alternative to C.O.B. techniques. PowerSO-10 offers devices fully tested at low and high temperature. Mounting is simple - only conventional SMT is required - enabling the users to get rid of bond wire problems and the problem to control the high temperature soft soldering as well. An optimized thermal management is guaranteed through PowerSO-10 as the power chips must in any case be mounted on heat spreaders before being mounted onto the substrate. Fig. 4 : Mounting on metal backed board Fig. 5 : Mounting on metal backed board with an external heatsink applied Copper foil FR4 board Copper foil Insulation Aluminium Aluminium heatsink TABLE 1 Printed circuit board material Rth (j-a) P Diss 1.FR4 using the recommended pad-layout 50 °C/W 1.5 W 2.FR4 with heatsink on board (6cm2) 35 °C/W 2.0 W 3.FR4 with copper-filled through holes and external heatsink applied 12 °C/W 5.8 W 4. IMS floating in air (40 cm2) 8 °C/W 8.8 W 3.5 °C/W 20 W 5. IMS with external heatsink applied Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. 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