SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) () ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25C Unless Otherwise Noted) Parameter Gate-Source Voltage TC = 25C Continuous Drain Current (TJ = 175C) TC = 125C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25C (TO-220AB and TO-263) Power Dissipation TA = 25C (TO-263)d Operating Junction and Storage Temperature Range Symbol Limit Unit VGS 20 V 75a ID 55 IDM 240 IAR 60 EAR 280 A mJ 187c PD TJ, Tstg 3.7 –55 to 175 W C Thermal Resistance Ratings Parameter Symbol PCB Mount (TO-263)d Junction to Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Limit Unit 40 RthJA RthJC 62.5 C/W 0.8 Notes a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283. A SPICE Model data sheet is available for this product (FaxBack document #70527). Siliconix S-47969—Rev. D, 08-Jul-96 1 SUP/SUB75N06-08 Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 2.0 3.0 4.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currentb ID(on) Unit Static Gate Threshold Voltage V "100 VDS = 60 V, VGS = 0 V, TJ = 175C VDS = 5 V, VGS = 10 V Drain-Source On-State rDS(on) A 0.007 VGS = 10 V, ID = 30 A, TJ = 125C gfs VDS = 15 V, ID = 30 A 0.008 0.012 VGS = 10 V, ID = 30 A, TJ = 175C Forward Transconductance b mA 150 120 VGS = 10 V, ID = 30 A Resistanceb nA W 0.016 30 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 270 Total Gate Chargec Qg 85 Gate-Source Chargec Qgs 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 75 A pF 910 120 nC 28 Gate-Drain Chargec Qgd 26 Turn-On Delay Timec td(on) 20 40 95 200 65 120 20 60 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDD = 30 V,, RL = 0.47 W ID ^ 75 A, A VGEN = 10 V, V RG = 2.5 25W tf ns Continuous Current IS 75 Pulsed Current ISM 240 Forward Voltageb VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 75 A , VGS = 0 V trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms A 1.0 1.3 V 67 120 ns 6 8 A 0.2 0.48 mC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test: pulse width v 300 msec, duty cycle v 2%. c. Independent of operating temperature. 2 Siliconix S-47969—Rev. D, 08-Jul-96 SUP/SUB75N06-08 Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics Transfer Characteristics 200 250 VGS = 10, 9, 8 V 7V 6V I D – Drain Current (A) I D – Drain Current (A) 200 150 100 5V 50 150 100 TC = 125C 50 25C 4V 0 –55C 0 0 2 4 6 8 0 10 2 VDS – Drain-to-Source Voltage (V) Transconductance 8 10 On-Resistance vs. Drain Current 0.010 TC = –55C 100 25C 80 rDS(on) – On-Resistance ( ) g fs – Transconductance (S) 6 VGS – Gate-to-Source Voltage (V) 120 125C 60 40 20 0 0.008 VGS = 10 V 0.006 VGS = 20 V 0.004 0.002 0 0 20 40 60 80 0 100 20 VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Ciss 5000 4000 3000 2000 Coss Crss 60 80 100 120 Gate Charge 20 6000 1000 40 ID – Drain Current (A) Capacitance 7000 C – Capacitance (pF) 4 0 VDS = 30 V ID = 75 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Siliconix S-47969—Rev. D, 08-Jul-96 60 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) 3 SUP/SUB75N06-08 Typical Characteristics (25C Unless Otherwise Noted) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A 2.0 I S – Source Current (A) rDS(on) – On-Resistance ( ) (Normalized) 2.5 1.5 1.0 TJ = 150C TJ = 25C 10 0.5 0 –50 –25 1 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Thermal Ratings Maximum Avalanche and Drain Current vs. Case Temperature 100 Safe Operating Area 500 Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 80 60 40 100 100 ms 1 ms 10 TC = 25C Single Pulse 20 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (C) 100 ms dc 100 1 10 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 10 ms 1 0 1 10 ms Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) 4 Siliconix S-47969—Rev. D, 08-Jul-96