FAIRCHILD FDMS3016DC

FDMS3016DC
N-Channel Dual CoolTM PowerTrench® MOSFET
30 V, 49 A, 6.0 mΩ
Features
„ Dual Cool
General Description
TM
Top Side Cooling PQFN package
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
advanced
PowerTrench®
process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
„ Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A
„ High performance technology for extremely low rDS(on)
„ RoHS Compliant
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation
Pin 1
S
S
S
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
G
D
D
D
D
Power 56
Top
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
Ratings
30
Units
V
±20
V
49
78
(Note 1a)
-Pulsed
18
A
200
EAS
Single Pulse Avalanche Energy
(Note 3)
72
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 4)
1.3
V/ns
(Note 1a)
3.3
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
60
Operating and Storage Junction Temperature Range
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
5.7
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
2.1
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
°C/W
Package Marking and Ordering Information
Device Marking
3016
Device
FDMS3016DC
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
Package
Dual CoolTM Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET
July 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
3.0
V
30
V
17
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.0
1.9
-6
mV/°C
VGS = 10 V, ID = 12 A
5.0
6.0
VGS = 4.5 V, ID = 10 A
7.0
9.0
VGS = 10 V, ID = 12 A, TJ = 125 °C
7.5
9.4
VDS = 5 V, ID = 12 A
44
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1038
1385
pF
513
685
pF
87
135
pF
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 12 A
Qgd
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 12 A,
VGS = 10 V, RGEN = 6 Ω
9
18
ns
3
10
ns
19
35
ns
2
10
ns
16
23
nC
7.6
10.6
nC
3
nC
2.5
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
VGS = 0 V, IS = 12 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
IF = 12 A, di/dt = 100 A/μs
2
0.82
1.3
0.73
1.2
V
25
45
ns
9
18
nC
www.fairchildsemi.com
FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
5.7
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
2.1
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.
4. ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC.
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
3
www.fairchildsemi.com
FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET
Thermal Characteristics
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
6
VGS = 10V
ID, DRAIN CURRENT (A)
40
VGS = 4.5V
VGS = 3.5V
30
VGS = 4V
20
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
10
VGS = 3V
0
0
1
2
3
4
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
5
VGS = 3V
4
VGS = 3.5V
3
VGS = 4V
1
VGS = 10V
0
5
0
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
50
50
ID = 12A
VGS = 10V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
40
ID = 12A
30
20
TJ = 125oC
10
TJ = 25oC
0
150
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
IS, REVERSE DRAIN CURRENT (A)
50
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
40
ID, DRAIN CURRENT (A)
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
0.6
-50
20
ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
1.6
VGS = 4.5V
2
VDS = 5V
30
20
TJ = 150oC
TJ = 25oC
10
TJ = -55oC
0
1
2
3
4
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
0.1
TJ = -55oC
0.01
0.001
0.0
5
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
4
1.2
www.fairchildsemi.com
FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10
3000
VGS, GATE TO SOURCE VOLTAGE(V)
ID = 12A
Ciss
8
1000
CAPACITANCE (pF)
VDD = 10V
VDD = 15V
6
VDD = 20V
4
Coss
100
f = 1MHz
VGS = 0V
2
0
0
3
6
9
12
15
Crss
30
0.1
18
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
80
30
o
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
RθJC = 2.1 C/W
10
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
10
60
VGS = 10 V
40
0
25
100
50
tAV, TIME IN AVALANCHE(ms)
P(PK), PEAK TRANSIENT POWER (W)
2000
1000
ID, DRAIN CURRENT (A)
100 us
10
1 ms
10 ms
100 ms
1s
THIS AREA IS
LIMITED BY rDS(on)
10 s
SINGLE PULSE
TJ = MAX RATED
DC
RθJA = 81 oC/W
TA = 25 oC
0.001
0.01
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
150
SINGLE PULSE
o
RθJA = 81 C/W
o
TA = 25 C
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
0.01
100
o
500
0.1
75
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
VGS = 4.5 V
Limited by package
20
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 81 C/W
0.001
0.0005
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
6
www.fairchildsemi.com
FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
4
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
8
www.fairchildsemi.com
FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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Power-SPM™
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Quiet Series™
GTO™
CTL™
TinyBuck™
RapidConfigure™
IntelliMAX™
Current Transfer Logic™
TinyCalc™
ISOPLANAR™
DEUXPEED®
™
TinyLogic®
Dual Cool™
MegaBuck™
TINYOPTO™
EcoSPARK®
Saving our world, 1mW/W/kW at a time™
MICROCOUPLER™
TinyPower™
EfficentMax™
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MicroPak™
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