SANYO CPH5870

CPH5870
Ordering number : ENA1161
SANYO Semiconductors
DATA SHEET
CPH5870
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
•
•
•
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.
[MOSFET]
• Low ON-resistance
• Ultrahigh-speed switching
• 2.5V drive.
[SBD]
• Short reverse recovery time (trr max=10ns).
• Low forward voltage (VF max=0.55V).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
VDSS
VGSS
±10
60
V
V
ID
1.8
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
7.2
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate (600mm2✕0.8mm) 1unit
0.9
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +125
°C
Marking : YY
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51408PE TI IM TC-00001359 No. A1161-1/5
CPH5870
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
[SBD]
Repetitive Peak Reverse Voltage
VRRM
VRSM
50
55
V
Average Output Current
IO
800
mA
Surge Forward Current
IFSM
Nonrepetitive Peak Reverse Surge Voltage
50Hz sine wave, 1 cycle
V
5
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
ID=1mA, VGS=0V
VDS=60V, VGS=0V
60
V
1
μA
±10
μA
VGS(off)
⏐yfs⏐
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
RDS(on)1
RDS(on)2
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
170
220
mΩ
190
270
mΩ
VDS=20V, f=1MHz
VDS=20V, f=1MHz
325
pF
29
pF
VDS=20V, f=1MHz
See specified Test Circuit.
21
pF
11
ns
See specified Test Circuit.
17
ns
See specified Test Circuit.
40
ns
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
0.4
1.3
1.8
3.6
V
S
See specified Test Circuit.
27
ns
VDS=30V, VGS=4V, ID=1.8A
VDS=30V, VGS=4V, ID=1.8A
4.2
nC
1.1
nC
VDS=30V, VGS=4V, ID=1.8A
IS=1.8A, VGS=0V
1.1
nC
0.84
1.2
V
0.5
0.55
V
50
μA
[SBD]
Reverse Voltage
Forward Voltage
VR
VF
IR=200μA
IF=500mA
Reverse Current
IR
50
Interterminal Capacitance
C
VR=25V
VR=10V, f=1MHz, 1 cycle
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
Package Dimensions
V
17
pF
10
ns
Electrical Connection
unit : mm (typ)
7017A-005
4
3
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
0.15
2.9
5
4
3
0.9
0.05
1.6
0.2
0.6
2.8
0.2
0.6
5
1
1
2
0.95
0.4
2
Top view
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
No. A1161-2/5
CPH5870
Switching Time Test Circuit
trr Test Circuit
[SBD]
VDD=30V
VIN
4V
0V
Duty≤10%
D
100mA
ID=1A
RL=30Ω
VOUT
VIN
PW=10μs
D.C.≤1%
G
100Ω
10Ω
100mA
50Ω
10mA
[MOSFET]
10μs
--5V
P.G
50Ω
ID -- VDS
3.5
VGS=1.5V
0.8
0.6
2.5
2.0
1.5
1.0
0
0
0.1
0
0.4
0.5
0.6
0.7
0.8
0.9
0
1.0
Drain-to-Source Voltage, VDS -- V
IT06812
[MOSFET]
RDS(on) -- VGS
Ta=25°C
ID=1A
400
300
200
100
0
0
4
6
8
1.0
1.5
2.0
2.5
300
.5A
=0
, ID
V
5
.
250
=2
S
200
VG
A
=1
, ID
V
.0
=4
V GS
150
100
50
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, VGS -- V
IT06814
[MOSFET]
⏐yfs⏐ -- ID
IS -- VSD
7
5
VDS=10V
3.0
Gate-to-Source Voltage, VGS -- V
IT06813
[MOSFET]
RDS(on) -- Ta
350
0
--60
10
140
160
IT10367
[MOSFET]
VGS=0V
3
5
2
-25
=Ta
2
1.0
°C
C
25°
°C
75
7
5
3
1.0
7
5
Ta=
75°
C
25°
C
--25
°C
3
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
2
0.5
400
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.3
0.2
500
7
Ta=
2
0.5
0.2
10
5°C
0.4
--25°
C
1.0
3.0
75°C
Drain Current, ID -- A
3.0
V
2.5
V
2.0
1.2
[MOSFET]
VDS=10V
V
V
5.0
1.4
6.0
V
Drain Current, ID -- A
1.6
ID -- VGS
4.0
3.5
4.0
1.8
[MOSFET]
V
V
2.0
trr
CPH5870
S
3
2
0.1
7
5
3
2
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Drain Current, ID -- A
2
3
5
IT06816
0.01
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT06817
No. A1161-3/5
CPH5870
SW Time -- ID
100
1000
7
f=1MHz
7
5
Ciss
5
td(off)
3
tf
2
tr
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- VDS [MOSFET]
[MOSFET]
VDD=30V
VGS=4V
td(on)
2
100
7
5
Coss
Crss
3
10
2
7
10
7
5
0.1
2
3
5
7
2
1.0
3
Drain Current, ID -- A
VGS -- Qg
0
10
7
5
2
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Total Gate Charge, Qg -- nC
PD -- Ta
1.0
20
25
30
PW≤10μs
10
0μ
s
1m
s
ID=1.8A
10
DC
op
ms
10
0m
era
s
tio
n(T
Operation in this
a=
area is limited by RDS(on).
2
3
2
5°
C)
0.1
7
5
Ta=25°C
Single pulse
When mounted on ceramic substrate (600mm2✕0.8mm) 1unit
0.01
0.1
4.5
15
IDP=7.2A
1.0
7
5
3
2
0
2
3
IT06820
5 7 1.0
2
3
5 7 10
2
3
5 7 100
Drain-to-Source Voltage, VDS -- V
IT13497
IR -- VR
[SBD]
[MOSFET]
When mounted on ceramic substrate
(600mm2✕0.8mm) 1unit
0.9
Collector Dissipation, PD -- W
3
2
10
Drain-to-Source Voltage, VDS -- V
IT06819
[MOSFET]
ASO
2
3
0
5
[MOSFET]
VDS=30V
ID=2.0A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4
5
IT06818
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13498
IF -- VF
[SBD]
5
5
2
3
Reverse Current, IR -- μA
1.0
7
5
C
5°
12
=
Ta
3
25
°C
Forward Current, IF -- A
°C
Ta=125
1000
2
2
0.1
7
5
3
5
100°C
2
100
75°C
5
2
50°C
10
5
25°C
2
1.0
5
2
2
0.1
0.01
0
0.2
0.4
0.6
0.8
Forward Voltage, VF -- V
1.0
1.2
ID00339
0
10
20
30
40
50
Reverse Voltage, VR -- V
60
70
ID00340
No. A1161-4/5
PF(AV) -- IO
600
500
2
(4)
Rectangular
wave
(2)
θ
360°
Sine wave
100
180°
360°
0
0
200
100
300
400
500
Average Output Current, IO -- A
600
ID00341
IFSM -- t
7
Surge Forward Current, IFSM(Peak) -- A
(3)
(1)
200
[SBD]
f=1MHz
400
300
C -- VR
[SBD]
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Interterminal Capacitance, C -- pF
Average Forward Power Dissipation, PF(AV) -- mW
CPH5870
100
7
5
3
2
10
7
5
3
1.0
2
3
5
7
10
2
3
5
Reverse Voltage, VR -- V
7 100
ID00342
[SBD]
Current waveform 50Hz sine wave
6
IS
20ms
t
5
4
3
2
1
0
7 0.01
2
3
5
7
0.1
2
Time, t -- s
3
5
7
1.0
2
3
ID00343
Note on usage : Since the CPH5870 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1161-5/5