CPH5870 Ordering number : ENA1161 SANYO Semiconductors DATA SHEET CPH5870 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive. [SBD] • Short reverse recovery time (trr max=10ns). • Low forward voltage (VF max=0.55V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS ±10 60 V V ID 1.8 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 7.2 A Allowable Power Dissipation PD When mounted on ceramic substrate (600mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C Marking : YY Continued on next page. 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If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408PE TI IM TC-00001359 No. A1161-1/5 CPH5870 Continued from preceding page. Parameter Symbol Conditions Ratings Unit [SBD] Repetitive Peak Reverse Voltage VRRM VRSM 50 55 V Average Output Current IO 800 mA Surge Forward Current IFSM Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle V 5 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=1mA, VGS=0V VDS=60V, VGS=0V 60 V 1 μA ±10 μA VGS(off) ⏐yfs⏐ VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A RDS(on)1 RDS(on)2 ID=1A, VGS=4V ID=0.5A, VGS=2.5V 170 220 mΩ 190 270 mΩ VDS=20V, f=1MHz VDS=20V, f=1MHz 325 pF 29 pF VDS=20V, f=1MHz See specified Test Circuit. 21 pF 11 ns See specified Test Circuit. 17 ns See specified Test Circuit. 40 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 0.4 1.3 1.8 3.6 V S See specified Test Circuit. 27 ns VDS=30V, VGS=4V, ID=1.8A VDS=30V, VGS=4V, ID=1.8A 4.2 nC 1.1 nC VDS=30V, VGS=4V, ID=1.8A IS=1.8A, VGS=0V 1.1 nC 0.84 1.2 V 0.5 0.55 V 50 μA [SBD] Reverse Voltage Forward Voltage VR VF IR=200μA IF=500mA Reverse Current IR 50 Interterminal Capacitance C VR=25V VR=10V, f=1MHz, 1 cycle Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions V 17 pF 10 ns Electrical Connection unit : mm (typ) 7017A-005 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.15 2.9 5 4 3 0.9 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 1 1 2 0.95 0.4 2 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No. A1161-2/5 CPH5870 Switching Time Test Circuit trr Test Circuit [SBD] VDD=30V VIN 4V 0V Duty≤10% D 100mA ID=1A RL=30Ω VOUT VIN PW=10μs D.C.≤1% G 100Ω 10Ω 100mA 50Ω 10mA [MOSFET] 10μs --5V P.G 50Ω ID -- VDS 3.5 VGS=1.5V 0.8 0.6 2.5 2.0 1.5 1.0 0 0 0.1 0 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 Drain-to-Source Voltage, VDS -- V IT06812 [MOSFET] RDS(on) -- VGS Ta=25°C ID=1A 400 300 200 100 0 0 4 6 8 1.0 1.5 2.0 2.5 300 .5A =0 , ID V 5 . 250 =2 S 200 VG A =1 , ID V .0 =4 V GS 150 100 50 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C Gate-to-Source Voltage, VGS -- V IT06814 [MOSFET] ⏐yfs⏐ -- ID IS -- VSD 7 5 VDS=10V 3.0 Gate-to-Source Voltage, VGS -- V IT06813 [MOSFET] RDS(on) -- Ta 350 0 --60 10 140 160 IT10367 [MOSFET] VGS=0V 3 5 2 -25 =Ta 2 1.0 °C C 25° °C 75 7 5 3 1.0 7 5 Ta= 75° C 25° C --25 °C 3 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 2 0.5 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.3 0.2 500 7 Ta= 2 0.5 0.2 10 5°C 0.4 --25° C 1.0 3.0 75°C Drain Current, ID -- A 3.0 V 2.5 V 2.0 1.2 [MOSFET] VDS=10V V V 5.0 1.4 6.0 V Drain Current, ID -- A 1.6 ID -- VGS 4.0 3.5 4.0 1.8 [MOSFET] V V 2.0 trr CPH5870 S 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT06816 0.01 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 IT06817 No. A1161-3/5 CPH5870 SW Time -- ID 100 1000 7 f=1MHz 7 5 Ciss 5 td(off) 3 tf 2 tr 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] VDD=30V VGS=4V td(on) 2 100 7 5 Coss Crss 3 10 2 7 10 7 5 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A VGS -- Qg 0 10 7 5 2 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Total Gate Charge, Qg -- nC PD -- Ta 1.0 20 25 30 PW≤10μs 10 0μ s 1m s ID=1.8A 10 DC op ms 10 0m era s tio n(T Operation in this a= area is limited by RDS(on). 2 3 2 5° C) 0.1 7 5 Ta=25°C Single pulse When mounted on ceramic substrate (600mm2✕0.8mm) 1unit 0.01 0.1 4.5 15 IDP=7.2A 1.0 7 5 3 2 0 2 3 IT06820 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V IT13497 IR -- VR [SBD] [MOSFET] When mounted on ceramic substrate (600mm2✕0.8mm) 1unit 0.9 Collector Dissipation, PD -- W 3 2 10 Drain-to-Source Voltage, VDS -- V IT06819 [MOSFET] ASO 2 3 0 5 [MOSFET] VDS=30V ID=2.0A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4 5 IT06818 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13498 IF -- VF [SBD] 5 5 2 3 Reverse Current, IR -- μA 1.0 7 5 C 5° 12 = Ta 3 25 °C Forward Current, IF -- A °C Ta=125 1000 2 2 0.1 7 5 3 5 100°C 2 100 75°C 5 2 50°C 10 5 25°C 2 1.0 5 2 2 0.1 0.01 0 0.2 0.4 0.6 0.8 Forward Voltage, VF -- V 1.0 1.2 ID00339 0 10 20 30 40 50 Reverse Voltage, VR -- V 60 70 ID00340 No. A1161-4/5 PF(AV) -- IO 600 500 2 (4) Rectangular wave (2) θ 360° Sine wave 100 180° 360° 0 0 200 100 300 400 500 Average Output Current, IO -- A 600 ID00341 IFSM -- t 7 Surge Forward Current, IFSM(Peak) -- A (3) (1) 200 [SBD] f=1MHz 400 300 C -- VR [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- mW CPH5870 100 7 5 3 2 10 7 5 3 1.0 2 3 5 7 10 2 3 5 Reverse Voltage, VR -- V 7 100 ID00342 [SBD] Current waveform 50Hz sine wave 6 IS 20ms t 5 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00343 Note on usage : Since the CPH5870 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1161-5/5