SCH2401 Ordering number : EN8975 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2401 General-Purpose Switching Device Applications Features • • • • • The SCH2401 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling high-density mounting. Low ON-resistance. High-speed switching. 2.5V drive. High ESD voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage (*1) VGSS 10 V ID 0.7 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2.8 A 0.65 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C (*1) : Since the diode between Gate-to-Source for gate prevention serves as one side direction, this product should be careful in circuitry. Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V Forward Transfer Admittance VGS(off) yfs VGS=8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=350mA Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=350mA, VGS=4V ID=200mA, VGS=2.5V Input Capacitance RDS(on)3 Ciss ID=10mA, VGS=1.5V VDS=10V, f=1MHz Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : LA VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min typ Unit max 30 V 0.4 0.48 1 µA 1 µA 1.3 0.8 V S 0.7 0.9 Ω 0.8 1.15 Ω 1.6 2.4 30 Ω pF 7 pF 3.5 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2906PE TI IM TB-00000177 No.8975-1/4 SCH2401 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 6 ns See specified Test Circuit. 10 ns tf See specified Test Circuit. 8 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=700mA VDS=10V, VGS=10V, ID=700mA 1 Gate-to-Source Charge 0.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=700mA 0.2 Diode Forward Voltage VSD IS=700mA, VGS=0V Package Dimensions nC 0.93 1.2 V Switching Time Test Circuit unit : mm (typ) 7028-006 VDD=15V VIN 4V 0V 1.6 0.05 0.2 0.2 6 5 4 ID=350mA RL=42Ω VIN 1.5 1 2 3 0.5 VOUT G 0.25 0.56 0.05 1.6 D PW=10µs D.C.≤1% 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SCH2401 P.G 50Ω S SANYO : SCH6 25 0.2 0.1 2.5 3.0 0.4 75 °C °C VGS=1.5V 0.6 --25 0.2 0.8 Ta = 0.3 1.0 °C Drain Current, ID -- A 4.0V V 0.5 25° 75° C C 1.2 2.0V 6.0 Drain Current, ID -- A 25° C 3.0 2.5 V V VDS=10V 0.6 0.4 ID -- VGS 1.4 Ta= -- ID -- VDS 0.7 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 1.2 IT08472 0 0.5 1.0 1.5 2.0 Gate-to-Source Voltage, VGS -- V 3.5 4.0 IT08473 No.8975-2/4 SCH2401 RDS(on) -- VGS 5.0 RDS(on) -- Ta 1.6 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4.0 ID=200mA 3.0 350mA 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Gate-to-Source Voltage, VGS -- V =2.5V VGS 1.0 A, 200m I D= 0.8 =4.0V A, V GS 0m I D=35 0.6 0.4 0.2 --40 --20 0 20 40 60 80 100 VGS=0V 2 2 1.0 7 5°C 5 Ta= --2 C 5° 7 3 °C 25 2 7 5 3 2 0.1 7 5 3 0.1 2 --25°C 1.0 7 2 3 5 7 0.1 2 3 5 2 7 1.0 Drain Current, ID -- A 0.01 0.2 3 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT08476 SW Time -- ID 100 1.4 IT08477 Ciss, Coss, Crss -- VDS 60 f=1MHz 7 5 50 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 140 IT08475 IS -- VSD 3 VDS=10V 5 0.01 2 td(off) td(on) tf tr 10 7 5 40 Ciss 30 20 3 Coss 10 2 1.0 0.1 5 3 7 2 1.0 0 3 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.5 2.0 1.5 1.0 0.5 0 0.2 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT07517 RDS(on) -- ID VGS=4V 3.0 0.1 10 3 VDS=10V ID=0.7A 0 5 IT08478 VGS -- Qg 4.0 3.5 Crss 0 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 120 Ambient Temperature, Ta -- °C IT08474 Source Current, IS -- A Forward Transfer Admittance, yfs -- S 1.2 0 --60 8.0 yfs -- ID 3 1.4 Ta=75 °C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C 0.3 0.4 0.5 0.6 0.7 Total Gate Charge, Qg -- nC 0.8 0.9 1.0 IT08479 2 1.0 Ta=75°C 25°C --25°C 7 5 3 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT07519 No.8975-3/4 SCH2401 RDS(on) -- ID Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2 Ta=75°C 1.0 25°C --25°C 7 5 3 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A 3 1.0 IT07520 Drain Current, ID -- A 7 5 ≤10µs 1m ID=0.7A m DC op 0m s s tio n 0.1 Operation in this area is limited by RDS(on). 7 5 2 10 era 2 3 s 10 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 3 Ta=75°C 2 --25°C 25°C 1.0 7 2 3 5 5 7 10 Drain-to-Source Voltage, VDS -- V 2 7 2 0.1 Drain Current, ID -- A 3 IT07521 PD -- Ta 0.7 IDP=2.8A 2 1.0 VGS=1.5V 5 5 0.01 7 ASO 5 RDS(on) -- ID 7 VGS=2.5V Allowable Power Dissipation, PD -- W Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3 0.65 M 0.6 ou nt 0.5 ed on ac er am ic 0.4 bo ar 0.3 d (9 00 m 0.2 m2 ✕ 0. 8m m )1 un 0.1 it 0 3 5 IT08480 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08481 Note on usage : Since the SCH2401 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No.8975-4/4