STD60N3LH5 STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET Features Type VDSS RDS(on) Max ID STD60N3LH5 30V 0.008Ω 48A STU60N3LH5 30V 0.0084Ω 48A 3 3 ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses 2 1 DPAK 1 IPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order codes Marking Package Packaging STD60N3LH5 60N3LH5 DPAK Tape and reel STU60N3LH5 60N3LH5 IPAK Tube September 2008 Rev 2 1/15 www.st.com 15 Contents STD60N3LH5 - STU60N3LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ............................................... 8 STD60N3LH5 - STU60N3LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 30 V VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V VGS Gate-Source voltage ± 22 V ID (1) Drain current (continuous) at TC = 25°C 48 A ID Drain current (continuous) at TC = 100°C 42.8 A IDM (2) Drain current (pulsed) 192 A PTOT Total dissipation at TC = 25°C 60 W Derating factor 0.4 W/°C EAS (3) Single pulse avalanche energy 160 mJ Tj Operating junction temperature Storage temperature -55 to 175 °C Tstg 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, Id = 24A, Vdd = 12V Table 3. Symbol Thermal resistance Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.5 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj 3/15 Electrical characteristics 2 STD60N3LH5 - STU60N3LH5 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Symbol V(BR)DSS Static Parameter Drain-source breakdown Voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 22V Gate threshold voltage VDS= VGS, ID = 250µA VGS= 5V, ID= 24A VGS= 5V, ID= 24A Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 RG 4/15 µA µA ±100 nA V 0.008 Ω 0.0076 0.0084 Ω 0.0088 0.011 Ω 0.0092 0.0114 Ω 0.0072 SMD version Table 5. 1 10 1 VGS= 10V, ID= 24A Unit V VDS = 30V,Tc = 125°C SMD version Static drain-source on resistance Max. 30 VGS= 10V, ID= 24A RDS(on) Typ. VDS = 30V IDSS VGS(th) Min. Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1MHz, VGS=0 Total gate charge Gate-source charge Gate-drain charge VGS =5V Pre Vth gate-to-source charge Post Vth gate-to-source charge VGS =5V Gate input resistance Min Typ. Max. Unit 1350 265 32 pF pF pF (Figure 14) 8.8 4.7 2.2 nC nC nC VDD=15V, ID = 48A 2.2 nC (Figure 19) 2.5 nC f=1MHz gate bias Bias= 0 test signal level=20mV open drain 1.1 Ω VDD=15V, ID = 48A STD60N3LH5 - STU60N3LH5 Table 6. Symbol Electrical characteristics Switching on/off (resistive load) Parameter Test conditions Min. Typ. Max. Unit VDD=10V, ID= 24A, td(on) tr Turn-on delay time Rise time RG=4.7Ω, VGS= 10V (Figure 13 and Figure 18) 6 33 ns ns 19 4.2 ns ns VDD=10V, ID= 24A, td(off) tf Table 7. Symbol ISD Turn-off delay time Fall time RG=4.7Ω, VGS= 10V (Figure 13 and Figure 18) Source drain diode Parameter Test conditions (1) Source-drain current (pulsed) VSD Forward on voltage ISD=24A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=48A, di/dt =100A/µs, VDD=20V, Tj = 25°C Qrr IRRM Typ. Source-drain current ISDM trr Min. (Figure 15) 25 18.5 1.5 Max. Unit 48 192 A A 1.1 V ns nC A 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/15 Electrical characteristics STD60N3LH5 - STU60N3LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/15 STD60N3LH5 - STU60N3LH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/15 Test circuit 3 STD60N3LH5 - STU60N3LH5 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/15 Figure 18. Switching time waveform STD60N3LH5 - STU60N3LH5 Test circuit Figure 19. Gate charge waveform 9/15 Package mechanical data 4 STD60N3LH5 - STU60N3LH5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STD60N3LH5 - STU60N3LH5 Package mechanical data DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 11/15 Package mechanical data STD60N3LH5 - STU60N3LH5 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. A inch TYP. 2.2 MAX. MIN. 2.4 0.086 TYP. MAX. 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 12/15 STD60N3LH5 - STU60N3LH5 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 13/15 Revision history 6 STD60N3LH5 - STU60N3LH5 Revision history Table 8. 14/15 Document revision history Date Revision Changes 19-Oct-2007 1 First release 23-Sep-2008 2 VGS value has been changed on Table 2 and Table 5 STD60N3LH5 - STU60N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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