STP70NS04ZC N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET Features Type VDSS RDS(on) ID STP70NS04ZC Clamped < 10mΩ 80A ■ Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature 3 1 2 TO-220 Description This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended. Internal schematic diagram Applications ■ Switching applications – ABS, solenoid drivers – Motor control – Dc-dc converters Order code Part number Marking Package Packaging STP70NS04ZC P70NS04ZC TO-220 Tube May 2007 Rev 1 1/13 www.st.com 13 Contents STP70NS04ZC Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/13 ................................................ 9 STP70NS04ZC 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDG Parameter Drain-source voltage (VGS = 0) drain-gate voltage Value Unit 33 (1) V (1) V 33 VGS Gate-source voltage ID (2) Drain current (continuous) at TC = 25°C 80 A (2) Drain current (continuous) at TC=100°C 63 A IDG Drain gate current (continuous) ±50 A IGS Gate-source current (continuous) ±50 A IDM (3) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25°C 180 W Derating factor 1.2 W/°C VESD(G-S) Gate-source ESD (HBM-C=100pF, R=1.5KΩ) ±8 kV VESD(G-D) Gate-drain ESD (HBM-C=100pF, R=1.5KΩ) ±8 kV VESD(D-S) Drain-source ESD (HBM-C=100pF, R=1.5KΩ) ±8 kV -55 to 175 °C Value Unit ID TJ Tstg Operating junction temperature Storage temperature ±20 (1) V 1. Voltage is limited by zener diodes 2. Current limited by wire bonding 3. Pulse width limited by safe operating area Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 0.83 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche data Symbol Parameter Value Unit IAS Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 30 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD=50V) 720 mJ 3/13 Electrical characteristics 2 STP70NS04ZC Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DG On/off states Parameter Test conditions Typ. Max. Unit Clamped voltage ID = 1mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 16V 1 µA IGSS Gate body leakage current (VDS = 0) VGS = ±10V 2 µA VGSS Gate-source breakdown voltage IGS =±100µA 18 VGS(th) Gate threshold voltage VDS= VGS, ID = 1mA 2 RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A Table 5. Symbol gfs (1) Ciss Coss Crss tr(Voff) Parameter Test conditions Forward transconductance VDS =15V, ID = 30A Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 VCLAMP=32V, ID=60A, VGS=10V, RG=4.7Ω VDD=32V, ID = 60A Qgd Total gate charge Gate-source charge Gate-drain charge RG Internal gate resistor tc Qg Qgs 33 V V 3 4 V 8 11 mΩ Typ. Max. Unit Dynamic Off voltage rise time Fall time Cross-over time tf (see Figure 14) VGS =10V (see Figure 15) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/13 Min. Min. 35 S 1930 700 230 pF pF pF 110 90 140 ns ns ns 58 14 26 nC nC nC 14 Ω STP70NS04ZC Electrical characteristics Table 6. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD=80A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, di/dt = 100A/µs, VDD= 30 V, Tj=150°C (see Figure 19) 90 0.18 4 Max. Unit 80 320 A A 1.5 V ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/13 Electrical characteristics STP70NS04ZC 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STP70NS04ZC Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/13 Electrical characteristics Figure 13. Normalized IDSS vs temperature 8/13 STP70NS04ZC STP70NS04ZC 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/13 Package mechanical data 4 STP70NS04ZC Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STP70NS04ZC Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/13 Revision history 5 STP70NS04ZC Revision history Table 7. 12/13 Revision history Date Revision 04-May-2007 1 Changes First release STP70NS04ZC Please Read Carefully: Information in this document is provided solely in connection with ST products. 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