STMICROELECTRONICS STP70NS04ZC

STP70NS04ZC
N-channel clamped 8mΩ - 80A TO-220
Fully protected SAFeFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STP70NS04ZC
Clamped
< 10mΩ
80A
■
Low capacitance and gate charge
■
100% avalanche tested
■
175°C maximum junction temperature
3
1
2
TO-220
Description
This fully clamped Power MOSFET is produced
by using the latest advanced company’s Mesh
OVERLAY process which is based on a novel
strip layout. The inherent benefits of the new
technology coupled with the extra clamping
capabilities make this product particularly suitable
for the harshest operation conditions such as
those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
Internal schematic diagram
Applications
■
Switching applications
– ABS, solenoid drivers
– Motor control
– Dc-dc converters
Order code
Part number
Marking
Package
Packaging
STP70NS04ZC
P70NS04ZC
TO-220
Tube
May 2007
Rev 1
1/13
www.st.com
13
Contents
STP70NS04ZC
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/13
................................................ 9
STP70NS04ZC
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDG
Parameter
Drain-source voltage (VGS = 0)
drain-gate voltage
Value
Unit
33 (1)
V
(1)
V
33
VGS
Gate-source voltage
ID (2)
Drain current (continuous) at TC = 25°C
80
A
(2)
Drain current (continuous) at TC=100°C
63
A
IDG
Drain gate current (continuous)
±50
A
IGS
Gate-source current (continuous)
±50
A
IDM (3)
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25°C
180
W
Derating factor
1.2
W/°C
VESD(G-S)
Gate-source ESD (HBM-C=100pF, R=1.5KΩ)
±8
kV
VESD(G-D)
Gate-drain ESD (HBM-C=100pF, R=1.5KΩ)
±8
kV
VESD(D-S)
Drain-source ESD (HBM-C=100pF, R=1.5KΩ)
±8
kV
-55 to 175
°C
Value
Unit
ID
TJ
Tstg
Operating junction temperature
Storage temperature
±20
(1)
V
1. Voltage is limited by zener diodes
2. Current limited by wire bonding
3. Pulse width limited by safe operating area
Table 2.
Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
0.83
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
30
A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID=IAS, VDD=50V)
720
mJ
3/13
Electrical characteristics
2
STP70NS04ZC
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DG
On/off states
Parameter
Test conditions
Typ.
Max.
Unit
Clamped voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 16V
1
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±10V
2
µA
VGSS
Gate-source breakdown
voltage
IGS =±100µA
18
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 1mA
2
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 40A
Table 5.
Symbol
gfs (1)
Ciss
Coss
Crss
tr(Voff)
Parameter
Test conditions
Forward transconductance
VDS =15V, ID = 30A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
VCLAMP=32V, ID=60A,
VGS=10V, RG=4.7Ω
VDD=32V, ID = 60A
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
RG
Internal gate resistor
tc
Qg
Qgs
33
V
V
3
4
V
8
11
mΩ
Typ.
Max.
Unit
Dynamic
Off voltage rise time
Fall time
Cross-over time
tf
(see Figure 14)
VGS =10V
(see Figure 15)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/13
Min.
Min.
35
S
1930
700
230
pF
pF
pF
110
90
140
ns
ns
ns
58
14
26
nC
nC
nC
14
Ω
STP70NS04ZC
Electrical characteristics
Table 6.
Symbol
ISD
ISDM
(1)
VSD(2)
trr
Qrr
IRRM
Source drain diode
Parameter
Test conditions
Min.
Typ.
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD=80A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80A, di/dt = 100A/µs,
VDD= 30 V, Tj=150°C
(see Figure 19)
90
0.18
4
Max.
Unit
80
320
A
A
1.5
V
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/13
Electrical characteristics
STP70NS04ZC
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/13
STP70NS04ZC
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized BVDSS vs temperature
7/13
Electrical characteristics
Figure 13. Normalized IDSS vs temperature
8/13
STP70NS04ZC
STP70NS04ZC
3
Test circuit
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
Figure 17. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/13
Package mechanical data
4
STP70NS04ZC
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STP70NS04ZC
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.49
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/13
Revision history
5
STP70NS04ZC
Revision history
Table 7.
12/13
Revision history
Date
Revision
04-May-2007
1
Changes
First release
STP70NS04ZC
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