FDB2552_F085
N-Channel PowerTrench® MOSFET
150V, 37A, 36mΩ
Features
Applications
• r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A
• DC/DC Converters and Off-line UPS
• Qg(tot) = 39nC (Typ.), VGS = 10V
• Distributed Power Architectures and VRMs
• Low Miller Charge
• Primary Switch for 24V and 48V Systems
• Low QRR Body Diode
• High Voltage Synchronous Rectifier
• UIS Capability (Single Pulse and Repetitive Pulse)
• Direct Injection / Diesel Injection Systems
• Qualified to AEC Q101
• 42V Automotive Load Control
• RoHS Compliant
• Electronic Valve Train Systems
D
GATE
G
SOURCE
TO-263AB
DRAIN
(FLANGE)
S
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
150
Units
V
VGS
Gate to Source Voltage
±20
V
Continuous (TC = 25oC, VGS = 10V)
37
A
Continuous (TC = 100oC, VGS = 10V)
26
A
5
A
Drain Current
ID
Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 43oC/W
Pulsed
EAS
PD
TJ, TSTG
See Figure 4
A
Single Pulse Avalanche Energy (Note 1)
390
mJ
Power dissipation
150
W
Derate above 25oC
1.0
W/oC
Operating and Storage Temperature
o
-55 to 175
C
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-220, TO-263
1.0
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
62
o
C/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
o
C/W
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
1
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
April 2012
Device Marking
FDB2552
Device
FDB2552_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
150
-
-
V
-
-
1
-
-
250
µA
VGS = ±20V
-
-
±100
nA
V
V DS = 120V
VGS = 0V
TC = 150oC
On Characteristics
VGS(TH)
rDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2
-
4
ID = 16A, VGS = 10V
-
0.032
0.036
ID = 16A, VGS = 10V,
TJ = 175oC
-
0.084
0.097
-
2800
-
-
285
-
pF
-
55
-
pF
39
51
nC
-
5.2
6.8
nC
-
13.5
-
nC
-
8.4
-
nC
-
8.3
-
nC
ns
Ω
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0V to 2V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
V DS = 25V, VGS = 0V,
f = 1MHz
VDD = 75V
ID = 16A
Ig = 1.0mA
pF
Switching Characteristics (VGS = 10V)
tON
Turn-On Time
-
-
62
td(ON)
Turn-On Delay Time
-
12
-
ns
tr
Rise Time
-
29
-
ns
td(OFF)
Turn-Off Delay Time
-
36
-
ns
tf
Fall Time
-
29
-
ns
tOFF
Turn-Off Time
-
-
97
ns
V
V DD = 75V, ID = 16A
VGS = 10V, RGS = 8.2Ω
Drain-Source Diode Characteristics
ISD = 16A
-
-
1.25
ISD = 8A
-
-
1.0
V
Reverse Recovery Time
ISD = 16A, dISD/dt = 100A/µs
-
-
90
ns
Reverse Recovered Charge
ISD = 16A, dISD/dt = 100A/µs
-
-
242
nC
VSD
Source to Drain Diode Voltage
trr
QRR
Notes:
1: Starting TJ = 25°C, L = 7.8mH, IAS = 10A.
2: Pulse Width = 100s
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
2
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
1.2
40
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
30
20
10
0.2
0
0
0
25
50
75
100
150
125
175
25
50
75
TC , CASE TEMPERATURE (oC)
100
125
TC, CASE TEMPERATURE
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
150
175
(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
ZθJC, NORMALIZED
THERMAL IMPEDANCE
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t , RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
700
IDM, PEAK CURRENT (A)
TC = 25oC
FOR TEMPERATURES
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
VGS = 10V
100
30
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
3
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
100
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10µs
100µs
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
100
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
DC
STARTING TJ = 25 oC
10
STARTING TJ = 150o C
0.1
1
1
10
100
300
0.1
1
tAV, TIME IN AVALANCHE (ms)
0.01
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
80
VGS = 10V
60
40
TJ =
25oC
20
TJ = 175oC
60
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
TJ =
VGS = 6V
40
VGS = 5V
20
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-55oC
0
0
3.0
3.5
4.0
4.5
5.0
5.5
VGS , GATE TO SOURCE VOLTAGE (V)
6.0
0
Figure 7. Transfer Characteristics
1
2
3
4
VDS , DRAIN TO SOURCE VOLTAGE (V)
5
Figure 8. Saturation Characteristics
42
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
DRAIN TO SOURCE ON RESISTANCE(mΩ)
10
40
VGS = 6V
38
36
34
VGS = 10V
32
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
VGS = 10V, ID = 16A
0.5
30
0
10
20
ID, DRAIN CURRENT (A)
30
-80
40
Figure 9. Drain to Source On Resistance vs Drain
Current
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
4
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
1.2
1.4
VGS = VDS, ID = 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID = 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
0.9
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
VGS , GATE TO SOURCE VOLTAGE (V)
4000
CISS = CGS + CGD
C, CAPACITANCE (pF)
1.0
0.8
-80
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1000
1.1
C OSS ≅ CDS + CGD
CRSS = CGD
100
VDD = 75V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 37A
ID = 16A
2
VGS = 0V, f = 1MHz
10
0
0.1
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
0
150
20
30
40
Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source
Voltage
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
10
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
5
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics TC = 25°C unless otherwise noted
VDS
BVDSS
tP
L
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
IAS
+
RG
VDD
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01Ω
tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT)
VDS
L
VGS
VGS
VGS = 10V
+
Qgs2
VDD
DUT
VGS = 2V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
tf
90%
90%
+
VGS
VDD
-
10%
0
10%
DUT
90%
RGS
VGS
50%
50%
PULSE WIDTH
VGS
0
Figure 19. Switching Time Test Circuit
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
10%
Figure 20. Switching Time Waveforms
6
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FDB2552_F085 N-Channel PowerTrench® MOSFET
Test Circuits and Waveforms
RθJA = 26.51+ 19.84/(0.262+Area) EQ.2
RθJA = 26.51+ 128/(1.69+Area) EQ.3
60
RθJA (o C/W)
(T
–T )
JM
A
P D M = ----------------------------R θ JA
80
40
(EQ. 1)
In using surface mount devices such as the TO-263
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
power dissipation ratings. Precise determination of PDM is
complex and influenced by many factors:
20
0.1
1
10
(0.645)
(6.45)
AREA, TOP COPPER AREA in2 (cm2 )
(64.5)
Figure 21. Thermal Resistance vs Mounting
Pad Area
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the RθJA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
R
θ JA
19.84
( 0.262 + Area )
= 26.51 + -------------------------------------
(EQ. 2)
Area in Inches Squared
R
θ JA
128
( 1.69 + Area )
= 26.51 + ----------------------------------
(EQ. 3)
Area in Centimeters Squared
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
7
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, PDM , in an
application.
Therefore the application’s ambient
temperature, TA (oC), and thermal resistance RθJA (oC/W)
must be reviewed to ensure that TJM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
rev May 2002
LDRAIN
DPLCAP
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
RLDRAIN
RSLC1
51
5
51
ESLC
EVTHRES
+ 19 8
+
LGATE
GATE
1
11
+
17
EBREAK 18
-
50
RDRAIN
6
8
ESG
DBREAK
+
RSLC2
Ebreak 11 7 17 18 178
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
DRAIN
2
5
EVTEMP
RGATE + 18 22
9
20
21
16
DBODY
MWEAK
6
MMED
MSTRO
RLGATE
Lgate 1 9 7.15e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 2.3e-9
LSOURCE
CIN
8
7
SOURCE
3
RSOURCE
RLSOURCE
RLgate 1 9 71.5
RLdrain 2 5 10
RLsource 3 7 23
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
S1A
12
S2A
13
8
15
14
13
S1B
CA
RBREAK
17
18
RVTEMP
S2B
13
CB
6
8
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.5e-2
Rgate 9 20 1.04
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 4.6e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
5
8
EDS
-
IT
14
+
+
EGS
19
VBAT
+
-
8
22
RVTHRES
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*75),3))}
.MODEL DbodyMOD D (IS=2.6E-11 N=1.09 RS=2.6e-3 TRS1=3.0e-3 TRS2=1.5e-6
+ CJO=1.9e-9 M=0.62 TT=5.1e-8 XTI=4.2)
.MODEL DbreakMOD D (RS=0.3 TRS1=3.0e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=5.7e-10 IS=1.0e-30 N=10 M=0.58)
.MODEL MmedMOD NMOS (VTO=3.5 KP=6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.04)
.MODEL MstroMOD NMOS (VTO=4.15 KP=80 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.91 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=10.4 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-2e-6)
.MODEL RdrainMOD RES (TC1=8.5e-3 TC2=2.5e-5)
.MODEL RSLCMOD RES (TC1=3.4e-3 TC2=1.5e-6)
.MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-4.3e-3 TC2=-1.6e-5)
.MODEL RvtempMOD RES (TC1=-4.1e-3 TC2=1.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.0 VOFF=-4.0)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.0 VOFF=-6.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-0.5)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-2)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
8
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
PSPICE Electrical Model
.SUBCKT FDP2552 2 1 3 ;
Ca 12 8 1e-9
Cb 15 14 1e-9
Cin 6 8 2.65e-9
spe.ebreak n11 n7 n17 n18 = 178
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
GATE
1
DBREAK
50
-
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
EVTEMP
RGATE +
18 22
9
20
21
11
DBODY
16
MWEAK
6
EBREAK
+
17
18
-
MMED
MSTRO
RLGATE
CIN
DRAIN
2
8
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
i.it n8 n17 = 1
S1A
12
l.lgate n1 n9 = 7.15e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 2.3e-9
S2A
14
13
13
8
S1B
15
17
18
RVTEMP
S2B
13
CA
res.rlgate n1 n9 = 71.5
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 23
RBREAK
CB
6
8
EGS
-
19
IT
14
+
+
VBAT
5
8
EDS
-
+
8
22
RVTHRES
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.1e-3,tc2=-2e-6
res.rdrain n50 n16 = 2.5e-2, tc1=8.5e-3,tc2=2.5e-5
res.rgate n9 n20 = 1.04
res.rslc1 n5 n51 = 1.0e-6, tc1=3.4e-3,tc2=1.5e-6
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 4.6e-3, tc1=4.0e-3,tc2=1.0e-6
res.rvthres n22 n8 = 1, tc1=-4.3e-3,tc2=-1.6e-5
res.rvtemp n18 n19 = 1, tc1=-4.1e-3,tc2=1.5e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/75))** 3))
}
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
9
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
SABER Electrical Model
REV May 2002
template FDP2552 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2.6e-11,nl=1.09,rs=2.6e-3,trs1=3.0e-3,trs2=1.5e-6,cjo=1.9e-9,m=0.62,tt=5.1e-8,xti=4.2)
dp..model dbreakmod = (rs=0.3,trs1=3.0e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=5.7e-10,isl=10.0e-30,nl=10,m=0.58)
m..model mmedmod = (type=_n,vto=3.5,kp=6,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=4.15,kp=80,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=2.91,kp=0.03,is=1e-30, tox=1,rs=0.1)
LDRAIN
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-6.0,voff=-4.0)
DPLCAP
5
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-4.0,voff=-6.0)
10
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-2,voff=-0.5)
RLDRAIN
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.5,voff=-2)
RSLC1
51
c.ca n12 n8 = 1e-9
RSLC2
c.cb n15 n14 = 1e-9
ISCL
c.cin n6 n8 = 2.65e-9
th
JUNCTION
FDP2552T
CTHERM1 TH 6 1e-2
CTHERM2 6 5 1.5e-2
CTHERM3 5 4 2e-2
CTHERM4 4 3 2.1e-2
CTHERM5 3 2 2.2e-2
CTHERM6 2 TL 9e-2
CTHERM1
RTHERM1
6
RTHERM1 TH 6 2.7e-2
RTHERM2 6 5 2.8e-2
RTHERM3 5 4 7.8e-2
RTHERM4 4 3 9e-2
RTHERM5 3 2 2.7e-1
RTHERM6 2 TL 2.87e-1
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model FDP2552T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =1e-2
ctherm.ctherm2 6 5 =1.5e-2
ctherm.ctherm3 5 4 =2e-2
ctherm.ctherm4 4 3 =2.1e-2
ctherm.ctherm5 3 2 =2.2e-2
ctherm.ctherm6 2 tl =9e-2
CTHERM3
RTHERM3
4
CTHERM4
RTHERM4
rtherm.rtherm1 th 6 =2.7e-2
rtherm.rtherm2 6 5 =2.8e-2
rtherm.rtherm3 5 4 =7.8e-2
rtherm.rtherm4 4 3 =9e-2
rtherm.rtherm5 3 2 =2.7e-1
rtherm.rtherm6 2 tl =2.87e-1
}
3
CTHERM5
RTHERM5
2
CTHERM6
RTHERM6
tl
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
10
CASE
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
SPICE Thermal Model
REV 23 May 2002
tm
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Rev. I61
©2012 Fairchild Semiconductor Corporation
FDB2552_F085 Rev. B1
11
www.fairchildsemi.com
FDB2552_F085 N-Channel PowerTrench® MOSFET
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