TI 1P1G3157QDBVRQ1

SN74LVC1G3157-Q1
www.ti.com ............................................................................................................................................................ SCES463E – JUNE 2003 – REVISED APRIL 2008
SINGLE-POLE DOUBLE-THROW ANALOG SWITCH
FEATURES
1
•
•
•
•
•
•
•
•
Qualified for Automotive Applications
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
1.65-V to 5.5-V VCC Operation
Useful for Both Analog and Digital
Applications
Specified Break-Before-Make Switching
•
•
Rail-to-Rail Signal Handling
High Degree of Linearity
High Speed, Typically 0.5 ns
(VCC = 3 V, CL = 50 pF)
Low On-State Resistance, Typically ≈6 Ω
(VCC = 4.5 V)
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
DBV PACKAGE
(TOP VIEW)
B2
1
DCK PACKAGE
(TOP VIEW)
6
S
GND
2
5
VCC
B1
3
4
A
B2
1
6
S
GND
2
5
VCC
B1
3
4
A
See mechanical drawings for dimensions.
DESCRIPTION/ORDERING INFORMATION
This single-pole double-throw (SPDT) analog switch is designed for 1.65-V to 5.5-V VCC operation.
The SN74LVC1G3157 can handle both analog and digital signals. The device permits signals with amplitudes of
up to VCC (peak) to be transmitted in either direction.
Applications include signal gating, chopping, modulation or demodulation (modem), and signal multiplexing for
analog-to-digital and digital-to-analog conversion systems.
ORDERING INFORMATION (1)
TA
–40°C to 125°C
(1)
(2)
PACKAGE (2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
SOT (SOT-23) – DBV
Reel of 3000
1P1G3157QDBVRQ1
CC50
SOT (SC-70) – DCK
Reel of 3000
1P1G3157QDCKRQ1
C50
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
FUNCTION TABLE
CONTROL
INPUTS
ON
CHANNEL
L
B1
H
B2
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2008, Texas Instruments Incorporated
SN74LVC1G3157-Q1
SCES463E – JUNE 2003 – REVISED APRIL 2008 ............................................................................................................................................................ www.ti.com
LOGIC DIAGRAM (POSITIVE LOGIC)
B2
S
B1
1
6
4
A
3
Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage range (2)
–0.5
6.5
V
VIN
Control input voltage range (2) (3)
–0.5
6.5
V
–0.5
VCC + 0.5
(2) (3) (4) (5)
VI/O
Switch I/O voltage range
IIK
Control input clamp current
VIN < 0
IIOK
I/O port diode current
VI/O < 0
II/O
On-state switch current
VI/O = 0 to VCC
(6)
Continuous current through VCC or GND
θJA
Package thermal impedance (7)
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
(7)
2
V
–50
mA
–50
mA
±128
mA
±100
mA
DBV package
165
DCK package
258
–65
UNIT
150
°C/W
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground, unless otherwise specified.
The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
VI, VO, VA, and VBn are used to denote specific conditions for VI/O.
II, IO, IA, and IBn are used to denote specific conditions for II/O.
The package thermal impedance is calculated in accordance with JESD 51-7.
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Recommended Operating Conditions (1)
MIN
MAX
UNIT
VCC
1.65
5.5
V
VI/O
0
VCC
V
VIN
0
5.5
V
VIH
High-level input voltage, control input
VIL
Low-level input voltage, control input
Δt/Δv
VCC = 1.65 V to 1.95 V
VCC × 0.75
VCC × 0.25
VCC = 1.65 V to 1.95 V
VCC × 0.3
VCC = 2.3 V to 5.5 V
Input transition rise/fall time
VCC = 1.65 V to 1.95 V
20
VCC = 2.3 V to 2.7 V
20
VCC = 3 V to 3.6 V
10
VCC = 4.5 V to 5.5 V
TA
(1)
V
VCC × 0.7
VCC = 2.3 V to 5.5 V
V
ns/V
10
–40
125
°C
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
Copyright © 2003–2008, Texas Instruments Incorporated
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Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
On-state switch resistance (2)
ron
rrange
See Figure 1
and Figure 2
VI = 0 V,
IO = 4 mA
VI = 1.65 V,
IO = –4 mA
VI = 0 V,
IO = 8 mA
VI = 2.3 V,
IO = –8 mA
VI = 0 V,
IO = 24 mA
VI = 3 V,
IO = –24 mA
VI = 0 V,
IO = 30 mA
VI = 2.4 V,
IO = –30 mA
VI = 4.5 ,
IO = –30 mA
0 ≤ VBn ≤ VCC
(see Figure 1 and Figure 2)
On-state switch resistance
over signal range (2) (3)
VCC
Difference in on-state
resistance between
switches (2) (4) (5)
See Figure 1
On-state resistance
flatness (2) (4) (6)
3V
4.5 V
20
15
50
8
12
11
30
7
9.5
9
20
6
7.5
7
12
7
140
IA = –8 mA
2.3 V
45
IA = –24 mA
3V
18
4.5 V
1.65 V
0.5
VBn = 1.6 V,
IA = –8 mA
2.3 V
0.1
VBn = 2.1 V,
IA = –24 mA
3V
0.1
4.5 V
0.1
IA = –4 mA
1.65 V
110
IA = –8 mA
2.3 V
26
IA = –24 mA
3V
9
IA = –30 mA
4.5 V
4
1.65 V
to 5.5 V
Ω
Ω
10
VBn = 1.15 V, IA = –4 mA
0 ≤ VBn ≤ VCC
UNIT
15
1.65 V
VBn = 3.15 V, IA = –30 mA
ron(flat)
2.3 V
MAX
11
IA = –4 mA
IA = –30 mA
Δron
1.65 V
MIN TYP (1)
Ω
Ω
±1
µA
Ioff (7)
Off-state switch leakage current 0 ≤ VI, VO ≤ VCC (see Figure 3)
IS(on)
On-state switch leakage current VI = VCC or GND, VO = Open (see Figure 4)
IIN
Control input current
0 ≤ VIN ≤ VCC
ICC
Supply current
VIN = VCC or GND
5.5 V
ΔICC
Supply-current change
VIN = VCC – 0.6 V
5.5 V
Cin
Control input
capacitance
S
5V
2.7
pF
Cio(off)
Switch input/output
capacitance
Bn
5V
5.2
pF
Cio(on)
Switch input/output
capacitance
(1)
(2)
(3)
(4)
(5)
(6)
(7)
4
±0.05
±1
5.5 V
0V
to 5.5 V
Bn
5V
A
±1 (1)
±0.1 (1)
±1
µA
µA
±0.05
±1 (1)
1
10
µA
500
µA
17.3
17.3
pF
TA = 25°C
Measured by the voltage drop between I/O pins at the indicated current through the switch. On-state resistance is determined by the
lower of the voltages on the two (A or B) ports.
Specified by design
Δron = ron(max) – ron(min) measured at identical VCC, temperature, and voltage levels
This parameter is characterized, but not tested in production.
Flatness is defined as the difference between the maximum and minimum values of on-state resistance over the specified range of
conditions.
Ioff is the same as IS(off) (off-state switch leakage current).
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Analog Switch Characteristics
TA = 25°C
FROM
(INPUT)
PARAMETER
Frequency response
(switch on) (1)
A or Bn
Crosstalk
(between switches) (2)
A or Bn
Charge injection (3)
S
Total harmonic distortion
TEST CONDITIONS
A or Bn
VCC
RL = 50 Ω,
fin = sine wave
(see Figure 6)
Bn or A
B1 or B2
Feedthrough attenuation
(switch off) (2)
(1)
(2)
(3)
TO
(OUTPUT)
RL = 50 Ω,
fin = 10 MHz (sine wave)
(see Figure 7)
B2 or B1
Bn or A
CL = 5 pF, RL = 50 Ω,
fin = 10 MHz (sine wave)
(see Figure 8)
A
CL = 0.1 nF, RL = 1 MΩ
(see Figure 9)
VI = 0.5 Vp-p, RL = 600 Ω,
fin = 600 Hz to 20 kHz
(sine wave)
(see Figure 10)
Bn or A
TYP
UNIT
1.65 V
300
2.3 V
300
3V
300
4.5 V
300
1.65 V
–54
2.3 V
–54
3V
–54
4.5 V
–54
1.65 V
–57
2.3 V
–57
3V
–57
4.5 V
–57
3.3 V
3
5V
7
1.65 V
0.1
2.3 V
0.025
3V
0.015
4.5 V
0.01
MHz
dB
dB
pC
%
Adjust fin voltage to obtain 0 dBm at output. Increase fin frequency until dB meter reads –3 dB.
Adjust fin voltage to obtain 0 dBm at input.
Specified by design
Switching Characteristics
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 5 and Figure 11)
PARAMETER
tpd (1)
ten
FROM
(INPUT)
TO
(OUTPUT)
A or Bn
Bn or A
S
Bn
(2)
tdis (3)
tB-M (4)
(1)
(2)
(3)
(4)
VCC = 1.8 V
± 0.15 V
MIN
VCC = 2.5 V
± 0.2 V
MAX
MIN
2
MAX
VCC = 3.3 V
± 0.3 V
MIN
1.2
MAX
VCC = 5 V
± 0.5 V
MIN
0.8
0.3
7
24
3.5
14
2.5
7.6
1.7
5.7
3
13
2
7.5
1.5
5.3
0.8
3.8
0.5
0.5
0.5
UNIT
MAX
0.5
ns
ns
ns
tpd is the slower of tPLH or tPHL. Propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and
the specified load capacitance when driven by an ideal voltage source (zero output impedance).
ten is the slower of tPZL or tPZH.
tdis is the slower of tPLZ or tPHZ.
Specified by design
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PARAMETER MEASUREMENT INFORMATION
VCC
VCC
S
VIL or VIH
S
1
VIL
2
VIH
1
B1
SW
B2
VO
2
A
VI = VCC or GND
SW
GND
IO
r on +
V
Ť
Ť
VI * VO
W
IO
VI – VO
Figure 1. On-State Resistance Test Circuit
120
VCC = 1.65 V
100
ron − W
80
60
40
VCC = 2.3 V
20
VCC = 3 V
VCC = 4.5 V
0
0
1
2
3
4
5
VI − V
Figure 2. Typical ron as a Function of Input Voltage (VI) for VI = 0 to VCC
6
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PARAMETER MEASUREMENT INFORMATION (continued)
VCC
VCC
S
VIL or VIH
SW
B1
VI
1
VIL
2
VIH
1
SW
B2
S
VO
2
A
A
GND
Condition 1: VI = GND, VO = VCC
Condition 2: VI = VCC, VO = GND
Figure 3. Off-State Switch Leakage-Current Test Circuit
VCC
VCC
S
VIL or VIH
SW
B1
VI
1
VIL
2
VIH
1
SW
B2
S
VO
VO = Open
2
A
A
GND
VI = VCC or GND
Figure 4. On-State Switch Leakage-Current Test Circuit
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PARAMETER MEASUREMENT INFORMATION (continued)
VLOAD
S1
RL
From Output
Under Test
CL
(see Note A)
Open
GND
RL
TEST
S1
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
Open
VLOAD
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
VCC
VCC
≤2 ns
≤2 ns
≤2.5 ns
≤2.5 ns
VM
VLOAD
CL
RL
V∆
VCC/2
VCC/2
VCC/2
VCC/2
2 × VCC
2 × VCC
2 × VCC
2 × VCC
50 pF
50 pF
50 pF
50 pF
500 Ω
500 Ω
500 Ω
500 Ω
0.3 V
0.3 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tw
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
Output
VM
VOL
tPHL
VM
VM
0V
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
tPLZ
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VM
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + V∆
VOL
tPHZ
VM
VOH − V∆
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 5. Load Circuit and Voltage Waveforms
8
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PARAMETER MEASUREMENT INFORMATION (continued)
VCC
VCC
S
VIL or VIH
SW
S
1
VIL
2
VIH
1
B1
SW
B2
2
A
VO
RL
50 Ω
GND
50 Ω
fin
Figure 6. Frequency Response (Switch On)
S
VCC
VIL or VIH
TEST CONDITION
VIL
20log10(VO2/VI)
VIH
20log10(VO1/VI)
VCC
S
B1
VB1
fin
VB2
A
Analyzer
B2
GND
50 Ω
RL
50 Ω
Figure 7. Crosstalk (Between Switches)
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PARAMETER MEASUREMENT INFORMATION (continued)
VCC
VCC
S
VIL or VIH
SW
S
1
VIL
2
VIH
1
B1
SW
Analyzer
B2
A
2
RL
50 Ω
GND
fin
50 Ω
Figure 8. Feedthrough
VCC
VCC
S
1
B1
Logic
Input
SW
B2
VOUT
2
RGEN
VGE
A
GND
RL
CL
RL/CL = 1 MΩ/100 pF
Logic
Input
OFF
ON
OFF
∆VOUT
VOUT
Q = (∆VOUT)(CL)
Figure 9. Charge-Injection Test
10
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PARAMETER MEASUREMENT INFORMATION (continued)
VCC
VCC
S
VIL or VIH
B1
1
SW
S
1
VIL
2
VIH
10 µF
SW
B2
A
2
VO
RL
10 kΩ
CL
50 pF
GND
600 Ω
fin
VCC/2
VCC = 1.65 V, VI = 1.4 VP-P
VCC = 2.30 V, VI = 2.0 VP-P
VCC = 3.00 V, VI = 2.5 VP-P
VCC = 4.50 V, VI = 4.0 VP-P
Figure 10. Total Harmonic Distortion
VCC
VCC
S
B1
VI = VCC/2
B2
VO
A
GND
VS
RL
CL
RL/CL = 50 Ω/35 pF
VO
0.9 y VO
tB-M
Figure 11. Break-Before-Make Internal Timing
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PACKAGE OPTION ADDENDUM
www.ti.com
8-Jul-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
1P1G3157QDBVRQ1
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
1P1G3157QDCKRQ1
ACTIVE
SC70
DCK
6
3000 Green (RoHS &
no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF SN74LVC1G3157-Q1 :
• Catalog: SN74LVC1G3157
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 1
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