rfRXD0420/0920 UHF ASK/FSK/FM Receiver • Single frequency receiver set by crystal frequency • Receive frequency range: Device Frequency Range rfRXD0420 300 MHz to 450 MHz rfRXD0920 800 MHz to 930 MHz • Maximum data rate: - ASK: 80 Kbps NRZ - FSK: 40 Kbps NRZ • IF frequency range: 455 kHz to 21.4 MHz • RSSI range: 70 dB • Frequency deviation range: ±5 kHz to ±120 kHz • Maximum FM modulation frequency: 15 kHz 2003 Microchip Technology Inc. VSS LNAGAIN LNAOUT 1IFIN VSS 1IF+ 1IFVDD 1 2 3 4 5 6 7 8 rfRXD0420 rfRXD0920 DEMOUTDEMOUT+ VSS RSSI OPA+ OPAOPA VDD 24 23 22 21 20 19 18 17 DEMIN 2IFOUT VDD FBC2 FBC1 2IFIN VSS 1IFOUT UHF ASK/FSK Receiver: LQFP 16 15 14 13 12 11 10 9 • Low cost single conversion superheterodyne receiver architecture • Compatible with rfPIC™ and rfHCS series of RF transmitters • Easy interface to PICmicro® microcontroller (MCU) and KEELOQ® decoders • VCO phase locked to quartz crystal reference: - Narrow receiver bandwidth - Maximizes range and interference immunity • Selectable LNA gain control for improved dynamic range • Selectable IF bandwidth via external ceramic IF filter • Received Signal Strength Indicator (RSSI) for signal strength indication (FSK, FM) and ASK demodulation • FSK/FM quadrature (phase coincidence) detector demodulator • 32-Lead LQFP package VDD LNAIN VSS LF ENRX VDD XTAL VSS Pin Diagram: 32 31 30 29 28 27 26 25 Features: Applications: • • • • • • • Wireless remote command and control Wireless security systems Remote Keyless Entry (RKE) Low power telemetry Low power FM receiver Home automation Remote sensing Bi-CMOS Technology: • Wide operating voltage range • Low current consumption in Active and Standby modes - rfRXD0420 - 8.2 mA (typical, LNA High Gain mode) - <100 nA standby - rfRXD0920 - 9.2 mA (typical, LNA High Gain mode) - <100 nA standby • Wide temperature range: - Industrial: -40°C to +85°C Preliminary DS70090A-page 1 rfRXD0420/0920 1.0 DEVICE OVERVIEW The rfRXD0420/0920 are low cost, compact single frequency short-range radio receivers requiring only a minimum number of external components for a complete receiver system. The rfRXD0420 covers the receive frequency range of 300 MHz to 450 MHz and the rfRXD0920 covers 800 MHz to 930 MHz. The rfRXD0420 and rfRXD0920 share a common architecture. They can be configured for Amplitude Shift Keying (ASK), Frequency Shift Keying (FSK), or FM modulation. The rfRXD0420/0920 are compatible with rfPIC™ and rfHCS series of RF transmitters. • High frequency stability over temperature and power supply variations • Low spurious signal emission • High large-signal handling capability with selectable LNA gain control for improved dynamic range • Selectable IF bandwidth via external low cost ceramic IF filter. The IF Frequency range is selectable between 455 kHz to 21.4 MHz. This facilitates the use of readily available low cost 10.7 MHz ceramic IF filters in a variety of bandwidths. • ASK or FSK for digital data reception • FM modulation for analog signal reception • FSK/FM demodulation using quadrature detector (phase coincidence detector) • Received Signal Strength Indication (RSSI) for signal strength indication and ASK detection • Wide supply voltage range • Low active current consumption • Very low standby current DS70090A-page 2 The rfRXD0420/0920 is a single conversion superheterodyne architecture. A block diagram is illustrated in Figure 1-1. The rfRXD0420/0920 consists of: • Low-noise amplifier (LNA) - Gain selectable • Mixer for down-conversion of the RF signal to the Intermediate Frequency (IF) followed by an IF preamplifier • Fully integrated Phase-Locked Loop (PLL) frequency synthesizer for generation of the Local Oscillator (LO) signal. The frequency synthesizer consists of: - Crystal oscillator - Phase-frequency detector and charge pump - High-frequency Voltage Controlled Oscillator (VCO) - Fixed feedback divider - rfRXD0420 = divide by 16 - rfRXD0920 = divide by 32 • IF limiting amplifier to amplify and limit the IF signal and for Received Signal Strength Indication (RSSI) generation • Demodulator (DEMOD) section consists of a phase detector (MIXER2) and amplifier creating a quadrature detector (also known as a phase coincidence detector) to demodulate the IF signal in FSK and FM modulation applications • Operational amplifier (OPA) that can be configured as a comparator for ASK or FSK data decision or as a filter for FM modulation. • Bias circuitry for bandgap biasing and circuit shutdown Preliminary 2003 Microchip Technology Inc. 30 VSS 31 LNA IN 32 VDD LNA 3 4 VSS MIXER1 5 7 1IF- 29 8 1IF OUT 28 Bias 27 Phase Detector and Charge Pump 9 VSS 12 13 26 Crystal Oscillator 25 IF Limiting Amplifier with RSSI 11 Frequency Synthesizer 10 14 15 2IF OUT 24 - 16 DEM OUT- VDD IF Preamp Fixed Divide by 16: rfRXD0420 32: rfRXD0920 1IF+ Voltage Controlled Oscillator 6 LF FBC1 VSS 2 VDD 2IF IN XTAL Preliminary ENRX DEM IN 23 + 22 VDD DEMOD 17 MIXER2 2003 Microchip Technology Inc. DEM OUT+ 19 OPA- 21 RSSI 20 OPA+ OPA OPA + - 18 FIGURE 1-1: VSS 1 rfRXD0420/0920 rfRXD0420/0920 BLOCK DIAGRAM DS70090A-page 3 VDD FBC2 1IF IN LNA OUT LNA GAIN VSS rfRXD0420/0920 TABLE 1-1: Pin Name rfRXD0420/0920 PINOUT I/O DESCRIPTION Pin Number Pin Type Buffer Type Description LNAGAIN 2 I CMOS LNA gain control (with hysteresis) LNAOUT 3 O Analog LNA output (open collector) 1IFIN 4 I Analog 1st IF stage input 1IF+ 6 -- Analog MIXER1 bias (open collector) 1IF- 7 -- Analog MIXER1 bias (open collector) 1IFOUT 9 O Analog 1st IF stage output 2IFIN 11 I Analog 2nd IF stage input FBC1 12 -- Analog Limiter IF Amplifier external feedback capacitor FBC2 13 -- Analog Limiter IF Amplifier external feedback capacitor 2IFOUT 15 O Analog 2nd IF stage output DEMIN 16 I Analog Demodulator input OPA 18 O Analog Operational amplifier output OPA- 19 I Analog Operational amplifier input (negative) OPA+ 20 I Analog Operational amplifier input (positive) RSSI 21 O Analog Received signal strength indicator output DEMOUT+ 23 O Analog Demodulator output (positive) DEMOUT- 24 O Analog Demodulator output (negative) XTAL 26 I Analog Crystal oscillator input ENRX 28 I CMOS Receiver enable input LF 29 I Analog External loop filter connection. Common node of charge pump output and VCO tuning input. LNAIN 31 I Analog LNA input VDD 8, 14, 17, 27, 32 P Positive supply VSS 1, 5, 10, 25, 30 P Ground reference Legend: I = Input, O = Output, I/O = Input/Output, P = Power, CMOS = CMOS compatible input or output DS70090A-page 4 Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 2.0 CIRCUIT DESCRIPTION This section gives a circuit description of the internal circuitry of the rfRXD0420/0920 receiver. External connections and components are given in the APPLICATION CIRCUITS section. 2.1 Bias Circuitry Bias circuitry provides bandgap biasing and circuit shutdown capabilities. The ENRX (Pin 28) modes are summarized in Table 2-1. The ENRX pin is a CMOS compatible input and is internally pulled down to Vss. TABLE 2-1: BIAS CIRCUITRY CONTROL ENRX(1) Description 0 Standby mode 1 Receiver enabled The PLL consists of a phase-frequency detector, charge pump, voltage-controlled oscillator (VCO), and fixed divide-by-16 (rfRXD0420) or divide-by-32 (rfRXD0920) divider. The rfRXD0420/0920 employs a charge pump PLL that offers many advantages over the classical voltage phase detector PLL: infinite pull-in range and zero steady state phase error. The charge pump PLL allows the use of passive loop filters that are lower cost and minimize noise. Charge pump PLLs have reduced flicker noise thus limiting phase noise. An external loop filter is connected to pin LF (Pin 29). The loop filter controls the dynamic behavior of the PLL, primarily lock time and spur levels. The application determines the loop filter requirements. The VCO gain for the rfRXD0420/0920 receivers are listed in Table 2-2. TABLE 2-2: Note 1: ENRX has internal pull-down to Vss 2.2 Frequency Synthesizer The Phase-locked Loop (PLL) frequency synthesizer generates the Local Oscillator (LO) signal. It consists of: • • • • Crystal oscillator Phase-frequency detector and charge pump Voltage Controlled Oscillator (VCO) Fixed feedback divider: - rfRXD0420 = divide by 16 - rfRXD0920 = divide by 32 2.2.1 PLL PARAMETERS Device KVCO(1) ICP(1) Divider rfRXD0420 250 MHz/V at 433 MHz 60 µA 16 rfRXD0920 300 MHz/V at 868 MHz 60 µA 32 Note 1: Typical value The LF pin is illustrated in Figure 2-2. FIGURE 2-2: CRYSTAL OSCILLATOR VDD The internal crystal oscillator is a Colpitts type oscillator. It provides the reference frequency to the PLL. A crystal is normally connected to the XTAL (Pin 26) and ground. The internal capacitance of the crystal oscillator is 15 pF. Alternatively, a signal can be injected into the XTAL pin from a signal source. The signal should be AC coupled via a series capacitor at a level of approximately 600 mVpp. The XTAL pin is illustrated in Figure 2-1. FIGURE 2-1: BLOCK DIAGRAM OF XTAL PIN VDD VDD XTAL 30 pF VSS 40 µA 30 pF VSS 2003 Microchip Technology Inc. VSS 200 Ω LF 29 400 Ω VSS 4 pF VSS VSS 2.3 Low Noise Amplifier The Low-Noise Amplifier (LNA) is a high-gain amplifier whose primary purpose is to lower the overall noise figure of the entire receiver thus enhancing the receiver sensitivity. The LNA is an open-collector cascode design. The benefits of a cascode design are: • • • • VDD 50 kΩ 26 BLOCK DIAGRAM OF LOOP FILTER PIN high gain with low noise high-frequency wide bandwidth low effective input capacitance with stable input impedance • high output resistance • high reverse isolation that provides improved stability and reduces LO leakage Preliminary DS70090A-page 5 rfRXD0420/0920 Approximate LNA noise figures are listed in Table 2-3. TABLE 2-3: LNA NOISE FIGURES Device Noise Figure(1) rfRXD0420 TBD rfRXD0920 TBD The 1IF+ (Pin 6) and 1IF- (Pin 7) are bias connections to the MIXER1 balanced collectors. Both pins are open-collector outputs and are individually pulled up to VDD by a load resistor. The MIXER1 bias pins are illustrated in Figure 2-5. 1IFOUT (Pin 9) has an approximately 330 Ω singleended output impedance. The 330 Ω impedance provides a direct match to low cost ceramic IF filters. The 1IFOUT pins is illustrated in Figure 2-6. Note 1: Approximate value LNAIN (Pin 31) has an input impedance of approximately 26 Ω || 2 pF single-ended. FIGURE 2-4: BLOCK DIAGRAM OF MIXER1 PIN LNAOUT (Pin 3) has an open-collector output and is pulled up to VDD via a tuned circuit. VDD Important: To ensure LNA stability the VSS pin (Pin 1) must be connected to a low impedance ground. The LNA pins are illustrated in Figure 2-3. FIGURE 2-3: 13 Ω VSS LNAOUT 1.6V VDD 4 BLOCK DIAGRAM OF LNA PINS FIGURE 2-5: 5 kΩ VSS VDD VDD LNA IN 31 VDD 20 pF 20 pF 1IF+ VSS 7 VSS VSS VSS 500 µA The gain of the LNA can be selected between High and Low Gain modes by the LNAGAIN pin (Pin 2). LNAGAIN is a CMOS input with hysteresis. Table 2-4 summarizes the voltage levels and modes for LNA gain. In the High Gain mode the LNA operates normally. In Low Gain mode the gain of the LNA is reduced approximately 25 dB, reduces total supply current, and increases maximum input signal levels (see Electrical Characteristics section for values). Description < 0.8 V High Gain mode > 1.4 V Low Gain mode FIGURE 2-6: 1IFIN (Pin 4) has an approximately 33 Ω single-ended input impedance. The 1IFIN pin is illustrated in Figure 24. DS70090A-page 6 VDD 6.8 kΩ 130 Ω 1IFOUT 230 µA VSS MIXER1 performs down-conversion of the RF signal to the Intermediate Frequency (IF) and is followed by an IF preamplifier. VDD VDD 2.5 VSS BLOCK DIAGRAM OF IF PREAMP PIN 9 MIXER1 and IF Preamp 500 µA VSS TABLE 2-4: LNA GAIN CONTROL LNAGAIN 1IF- 6 1 VSS 2.4 500 µA VSS BLOCK DIAGRAM OF MIXER1 BIAS PINS 3 0.8V 13 Ω 1IFIN VSS IF Limiting Amplifier with RSSI The IF Limiting Amplifier amplifies and limits the IF signal at the 2IFIN pin (Pin 11). It also generates the Received Signal Strength Indicator (RSSI) signal (Pin 21). 2.5.1 IF LIMITING AMPLIFIER Magnitude control circuitry is used in the last stage of the receiver to keep the signal constant for demodulation. It can consist of a limiting or Automatic Gain Control (AGC) amplifier. A limiting amplifier is Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 employed in this design because it can handle a larger dynamic range while consuming less power with simple circuitry than AGC circuitry. The internal resistance of the 2IFIN pin is approximately 2.2 kΩ. In order to terminate ceramic IF filters whose output impedance is 330 Ω, a 390 Ω resistor can be paralleled to the 2IFIN and FBC2 pins. For FSK and FM demodulation, the RSSI represents the received signal strength of the incoming RF signal. The RSSI pin is illustrated in Figure 2-9. FIGURE 2-9: FBC1 (Pin 12) and FBC2 (Pin 13) are connected to external feedback capacitors. BLOCK DIAGRAM OF RSSI PIN VDD The IF Limiting Amplifier pins are illustrated in Figures 2-7 and 2-8. I (Pi) 50 Ω RSSI 21 36 kΩ VSS FIGURE 2-7: BLOCK DIAGRAM OF IF LIMITING AMPLIFIER INPUT PINS VDD FBC1 11 12 VSS 2.2 kΩ 2.2 kΩ VDD VSS 200 µA FBC2 VSS FIGURE 2-8: BLOCK DIAGRAM OF IF LIMITING AMPLIFIER OUTPUT PIN VDD VDD 40 µA VSS 2.5.2 The external tuned circuit can be constructed from simple inductor-capacitor (LC) components but will require one of the elements to be tunable. A no-tune solution can be constructed with a ceramic discriminator. The output voltage of the DEMOD amplifier (DEMout+ and DEMout-, Pins 23 and 24) depends on the peak deviation of the FSK or FM signal and the Q of the external tuned circuit. DEMout+ and DEMout- are high impedance outputs with only a 20 µA current capability. 2IFOUT 15 Demodulator The in-phase signal comes directly from the output of the IF limiting amplifier to MIXER2. The quadrature signal is created by an external tuned circuit from the output of the IF limiting amplifier (2IFOUT, Pin 15) ACcoupled to the MIXER2 DEMIN (Pin 16) input. The input impedance of the DEMIN pin is approximately 47 kΩ. Vss 13 2.6 The demodulator (DEMOD) section consists of a phase detector (MIXER2) and amplifier creating a quadrature detector (also known as a phase coincidence detector) to demodulate the IF signal in FSK and FM modulation applications. The quadrature detector provides all the IF functions required for FSK and FM demodulation with only a few external parts. VDD 2IFIN VSS VSS The Demodulator pins are illustrated in Figures 2-10 and 2-11. RECEIVED SIGNAL STRENGTH INDICATOR (RSSI) FIGURE 2-10: BLOCK DIAGRAM OF DEMODULATOR INPUT PIN The RSSI signal is proportional to the log of the signal at 2IFIN. The 2IFIN input RSSI range is approximately 40 µV to 160 mV. The slope of the RSSI output is approximately 26 mV/dB of RF signal. The RSSI output has an internal 36 kΩ resister to Vss fed by a current source. This resistor converts the RSSI current to voltage. For Amplitude Shift Keying (ASK) demodulation, RSSI is compared to a reference voltage (static or dynamic). Post detector filtering is easily implemented by connecting a capacitor to ground from the RSSI pin effectively creating an RC filter with the internal 36 kΩ resistor. 2003 Microchip Technology Inc. Preliminary VDD VDD VDD 47 kΩ DEM IN 16 VSS DS70090A-page 7 rfRXD0420/0920 FIGURE 2-11: BLOCK DIAGRAM OF DEMODULATOR OUTPTUT PINS VDD 50 Ω DEM OUT+ 23 20 µA VSS 20 µA VSS VSS VDD 50 Ω DEM OUT24 20 µA VSS 2.7 20 µA VSS VSS Operational Amplifier The internal operational amplifier (OPA) can be configured as a comparator for ASK or FSK or as a filter for FM modulation applications. The Op Amp pins are illustrated in Figures 2-12 and 2-13. FIGURE 2-12: BLOCK DIAGRAM OF OP AMP INPUT PINS VDD VDD 50 Ω OPA- VDD 20 µA 50 Ω OPA+ 19 20 VSS VSS FIGURE 2-13: BLOCK DIAGRAM OF OP AMP OUTPUT PIN VDD VDD 50 Ω OPA 18 VSS DS70090A-page 8 VSS Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 This subsection lists connections and components that are common between applications. The following subsections give specific circuit connections and components for ASK, FSK and FM applications. 3.1.1 BYPASS CAPACITORS Bypass capacitors should be placed as physically close as possible to VDD pins 8, 14, 17, 27 and 32 respectively. Additional bypassing and board level lowpass filtering of the power supply may be required depending on the application. 3.1.2 FREQUENCY PLANNING The rfRXD0420/0920 receivers are single-conversion superheterodyne architecture with a single IF frequency. The receive frequency is set by the crystal frequency (fXTAL) and intermediate frequency (fif). For a majority of applications an external crystal is connected to XTAL (Pin 26). Figure 3-1 illustrates an example circuit with an optional trim capacitor. 433.95 433.90 433.85 433.80 5 pF 10 pF 12 pF 15 pF 18 pF 22 pF 27 pF 33 pF 39 pF 433.75 Note that a 0 Ω resistor, in the lower left of the graph, represents an infinite capacitance. This will be the lowest frequency obtainable for the crystal and PCB combination. Calculation of the crystal frequency requires knowledge of the receive frequency (frf) and intermediate frequency (fif). Figure 3-3 is a worksheet to assist the designer in calculating the crystal frequency. Table 3-1 lists crystal frequencies for popular receive frequencies. Table 3-2 lists crystal parameters required for ordering crystals. For background information on crystal selection see Application Note AN826, Crystal Oscillator Basics and Crystal Selection for rfPICTM and PICmicro® Devices. TABLE 3-1: CRYSTAL FREQUENCIES FOR POPULAR RECEIVE FREQUENCIES Receive Frequency XTAL EXAMPLE CIRCUIT WITH OPTIONAL TRIM CAPACITOR 26 434.00 Trim Capacitor (pF) Crystal Frequency rfRXD0420 XTAL FIGURE 3-1: 434.05 47 pF General 434.10 0 ohms 3.1 RECEIVE FREQUENCY VS. TRIM CAPACITANCE 56 pF Performance of the radio system (transmitter and receiver) is affected by component selection and the environment in which it operates. Each system design has its own unique requirements. Specifications for a particular design requires careful analysis of the application and compromises for a practical implementation. FIGURE 3-2: 68 pF This section provides general information on application circuits for the rfRXD0420/0920 receiver. The following connections and external components provide starting points for designs and list the minimum circuitry recommended for general purpose applications. effect the trim capacitor has on the receive frequency for the rfRXD0420 at 433.92 MHz. Keep in mind that this graph represents one example circuit and the actual results depends on the crystal and PCB layout. 82 pF APPLICATION CIRCUITS Receive Frequency (MHz) 3.0 315 MHz 20.35625 MHz (2) 433.92 MHz 26.45125 MHz (1) rfRXD0920 C TRIM (OPTIONAL) 868.3 MHz 26.8 MHz (1) 915 MHz 28.259375 MHz (1) (1) Low-side injection (2) High-side injection X1 TABLE 3-2: CRYSTAL PARAMETERS The crystal load capacitance should be specified to include the internal load capacitance of the XTAL pin of 15 pF plus PCB stray capacitance (approximately 2 to 3 pF). A trim capacitor can be used to trim the crystal on frequency within the limitations of the crystal’s trim sensitivity and pullability. Figure 3-2 illustrates the 2003 Microchip Technology Inc. Parameter Value Frequency: (see Figure 3-1) Mode: Fundamental Load Capacitance: 15-20 pF ESR: 60 Ω Maximum These values are for design guidance only. Preliminary DS70090A-page 9 rfRXD0420/0920 FIGURE 3-3: FREQUENCY PLANNING WORKSHEET Step 1: Identify receive (frf) and IF frequency (fif). fif frf frf = ____________________ fif = ____________________ flo Step 2: Calculate crystal frequencies for high- and low-side injection: fXTAL x PLL divide ratio High-side Injection fXTAL-HIGH = ( frf + ) fif = PLL divide ratio ( _________ ) + _________ 16 if rfRXD0420 32 if rfRXD0920 = _______________ Low-side Injection fXTAL-LOW = ( frf - ) fif = PLL divide ratio ( _________ - _________ ) 16 if rfRXD0420 32 if rfRXD0920 = _______________ Step 3: Calculate Local Oscillator (LO) frequencies (flo) using fXTAL-HIGH and fXTAL-LOW: High-side Injection flo-HIGH = fXTAL-HIGH x PLL Divide Ratio = _________ x 16 if rfRXD0420 32 if rfRXD0920 = _____________ Low-side Injection flo-LOW = fXTAL-LOW x PLL Divide Ratio = _________ x 16 if rfRXD0420 32 if rfRXD0920 = _____________ Step 4: Select high-side injection (flo-HIGH) or low-side injection (flo-LOW) that corresponds to the LO frequency that is between the ranges of: Device LO Frequency Range rfRXD0420 300 to 430 MHz rfRXD0920 800 to 915 MHz Step 5: From the chosen injection mode in Step 4, write the selected crystal frequency (fXTAL) and circle injection mode. (circle one) fXTAL = ____________________ High-side Injection Low-side Injection Step 6: Calculate image frequency (frf-image) for the Injection mode chosen: if High-side Injection frf-image = frf + (2 x fif) = ___________ + ( 2 x ___________ ) = ______________ = ___________ - ( 2 x ___________ ) = ______________ if Low-side Injection frf-image = Note: frf - (2 x fif) Image frequency should be sufficiently filtered by the preselector for the application. DS70090A-page 10 Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 3.1.3 PLL LOOP FILTER An external PLL loop filter is connected to pin LF (Pin 29). The loop filter controls the dynamic behavior of the PLL, primarily lock time and spur levels. Generally, the PLL lock time is a small fraction of the overall receiver start-up time (see Electrical Characteristics Section). The crystal oscillator is the largest contributor to start-up time. Thus, for the majority of applications, design loop filter values for a wide loop bandwidth to suppress noise. Figure 3-4 illustrates an example filter circuit for a wide frequency range suitable for a majority of applications. The SAW filter has the added advantage of filtering wide-band noise and improving the signal-to-noise ratio (SNR) of the receiver. SAW filters require impedance matching. Refer to the manufacturers' data sheet and application notes for SAW filter pinouts, specified impedances and recommended matching circuits. Figure 3-5 shows a SAW filter example circuit. A secondary purpose of the preselector is to provide impedance matching between the antenna and LNAIN (Pin 31). 3.1.5 PLL LOOP FILTER EXAMPLE CIRCUIT 29 LF FIGURE 3-4: C2 OPTIONAL C1 1000 pF ANTENNA Receiver performance and device packaging influence antenna selection. There are many third-party antennas to choose from. Third-party antennas typically have an impedance of 50 Ω. The preselector components should be chosen to match the impedance of the antenna to the LNAIN (Pin 31) impedance of 26 Ω || 2 pF. The designer can chose to use a simple wire antenna. The length of the wire should be one-quarter the wavelength (λ) of the receive frequency. For example, the wavelength of 433.92 MHz is: R1 10 kΩ λ = c / frf where c = 3 x 108 m/s λ = 3 x 108 m/s / 433.92 x 106 Hz 3.1.4 λ = 0.69 m PRESELECTOR Receiver performance is heavily influenced by the preselector (also known as the front-end filter). The purpose of the preselector is to filter unwanted signals and noise from entering the receiver. The most important unwanted signal is the image frequency (frf-image). Pay particular attention to the image frequency calculated in Figure 3-3 as this will be the frequency that needs to be filtered out by the preselector. The preselector can be designed using a simple LC filter or a Surface Acoustic Wave (SAW) filter. A simple LC filter provides a low cost solution but will have the least effect filtering the image frequency. A SAW filter can effectively filter the image frequency with a minimum of 40 dB attenuation. FIGURE 3-5: therefore 0.25λ = 17.3 cm or 6.8 inches Finally, the wire antenna should be impedance matched to the preselector. The typical impedance of a one-quarter wavelength wire antenna is 36 Ω. 3.1.6 LNA GAIN For a majority of applications, LNAGAIN can be tied to Vss (ground) enabling High Gain mode. If the application requires short range communications, LNAGAIN can be tied to VDD (pulled up) enabling Low Gain mode. More Information on LNAGAIN operation can be found in the Circuit Description section. SAW FILTER EXAMPLE CIRCUIT L1 Antenna C1 Note: 2003 Microchip Technology Inc. F1 SAW Filter 2 Input Output 5 1 Input Gnd Output Gnd 6 Case Gnd 3 4 7 8 L2 LNAIN C2 Refer to SAW filter manufacturer’s data sheet for pin outs and values for impedance matching components. Preliminary DS70090A-page 11 rfRXD0420/0920 3.1.8 The LNAOUT (Pin 3) has an open-collector output. It is pulled up to VDD via a tuned circuit. It is also connected to 1IFIN (Pin 4) via a series decoupling capacitor. The 1IFIN input impedance is approximately 33 Ω || 1.5 pF. Important: To ensure LNA stability the VSS pin (Pin 1) must be connected to a low impedance ground. As shown in Figure 3-6, components C1 and L1 make up the tuned circuit and provide collector current via pull-up. Together with decoupling capacitor C2, they provided impedance matching between the LNA and MIXER1. To a lesser extent, C1, L1, and C2 provide band-pass filtering at the receive frequency (frf). Component values depend on the selected receive frequency. The challenge is to design the circuit with the fewest components setting Q as high as possible as limited by component tolerances. For a majority of applications it is best to design a wide bandwidth tuned circuit to account for manufacturing and component tolerances. The best approach is to design the tuned circuit using a filter simulation program. Table 3-3 lists example component values for popular receive frequencies. FIGURE 3-6: LNA OUTPUT TO MIXER1 EXAMPLE CIRCUIT. 1IF IN C2 LNAOUT MIXER1 BIAS EXAMPLE CIRCUIT VDD VDD R1 470 Ω 6 3.1.9 R2 470 Ω 7 INTERMEDIATE FREQUENCY (IF) FILTER The IF filter defines the overall adjacent signal selectivity of the receiver. For a majority of applications, lowcost 10.7 MHz ceramic IF filters are used. These are available in a variety of bandwidths and packages. The typical input and output impedance of ceramic filters is 330 Ω. 1IFOUT (Pin 9) has an approximately 330 Ω single-ended output impedance and provides a direct match to the ceramic IF filter. The internal resistance of the 2IFIN (Pin 11) is approximately 2.2 kΩ. In order to terminate ceramic IF filters a 390 Ω resistor can be paralleled to the 2IFIN and FBC2 (Pin 13). Figure 3-8 shows an example circuit schematic using a 10.7 MHz ceramic IF filter. L1 4 FIGURE 3-7: • modulation (ASK, FSK or FM) • signal bandwidth • frequency and temperature tolerances of the transmitter and receiver components C Bypass 3 The 1IF+ (Pin 6) and 1IF- (Pin 7) are bias connections to the MIXER1 balanced collectors. Both pins are open-collector outputs and are individually pulled up to VDD by a load resistor. Figure 3-7 shows a MIXER1 bias example circuit. IF filter bandwidth selection is a function of: VDD C1 MIXER1 BIAS 1IF- LNA TUNED CIRCUIT 1IF+ 3.1.7 3.1.10 IF LIMITING AMPLIFIER EXTERNAL FEEDBACK CAPACITORS TABLE 3-3: LNA TUNED CIRCUIT EXAMPLE COMPONENT VALUES frf C1 L1 C2 315 MHz 7.0 pF 22 nH 6.0 pF 433.92 MHz 3.0 pF 15 nH 6.0 pF 868.3 MHz 2.0 pF 7.6 nH 3.0 pF 915 MHz 2.0 pF 6.8 nH 3.0 pF FBC1 (Pin 12) and FBC2 (Pin 13) are connected to external feedback capacitors. Figure 3-8 shows component values and connections for these capacitors. These values are for design guidance only. DS70090A-page 12 Preliminary 2003 Microchip Technology Inc. 2003 Microchip Technology Inc. IF Preamp 9 1IF OUT Ceramic Filter 10.7 MHz 390 Ω 1000 pF 33000 pF IF Limiting Amplifier with RSSI 12 FBC1 11 2IFIN 2.2 kΩ FBC2 13 R1 50 Ω Preliminary R2 36 kΩ - DEMOD - 2IFOUT + MIXER2 16 DEM IN + 2.2 kΩ 15 21 RSSI 23 DEM OUT+ 24 DEM OUT- FIGURE 3-8: 1000 pF External Feedback Capacitors rfRXD0420/0920 IF FILTER, LIMITING AMPLIFIER AND DEMODULATOR BLOCK DIAGRAM DS70090A-page 13 TO ANTENNA MATCHING NETWORK ANT C14 330 pF +V 30 VSS 31 LNA IN 32 VDD 1 LNA 2 LNA GAIN 3 LNA OUT 4 C17 L3 1IF IN 7 29 +V VDD 1IF OUT R3 10 kΩ 27 C3 +V 330 pF C11 1000pF 28 Bias Phase Detector and Charge Pump 9 VSS +V 12 13 33000 pF C8 26 Crystal Oscillator 14 +V VDD 15 X1 16 NC 24 - 17 +V NC 23 + DEMOD NC NC C7 330pF C9 OPTIONAL CRYSTAL TRIM CAPACITOR 25 IF Limiting Amplifier with RSSI 11 R2 390 Ω C12 1000 pF Frequency Synthesizer 10 C16 330 pF F2 10.7 MHz IF Preamp 8 R4 470 Ω Fixed Divide by 16: rfRXD0420 32: rfRXD0920 1IF+ Voltage Controlled Oscillator 6 C10 OPTIONAL LOOP FILTER CAPACITOR MIXER1 5 R5 470 Ω VSS C15 1IF- C13 1000 pF FBC2 C18 330 pF LF 2IF IN XTAL 2IF OUT +V VDD FBC1 VSS DEM IN DEM OUT- Preliminary ENRX MIXER2 DS70090A-page 14 DEM OUT+ VDD 22 19 OPA- 21 RSSI 20 OPA+ OPA OPA + - 18 C4 330pF C1 1800 pF R1 100 kΩ C2 47000 pF RxDATA FIGURE 3-9: VSS +V rfRXD0420/0920 ASK APPLICATION CIRCUIT 2003 Microchip Technology Inc. VSS rfRXD0420/0920 3.2 Amplitude Shift Keying (ASK) Figure 3-9 illustrates an example ASK applications circuit. The IF Limiting Amplifier with RSSI is used as an ASK detector. The RSSI signal is post detector filtered and then compared to a reference voltage to determine if the incoming RF signal is a logical one or zero. The reference voltage can be configured as a dynamic voltage level determined by the incoming RF signal strength or by a predetermined fixed level. 3.2.1 RSSI POST DETECTOR FILTERING The RSSI signal is low-passed filtered to remove high frequency and pulse noise to aid the decision making process of the comparator and increase the sensitivity of the receiver. The RSSI signal low-pass filter is a RC filter created by the RSSI output impedance of 36 kΩ and capacitor C1. Setting the time constant (RC = τ) of the RC filter depends on the signal period and when the signal decision will be made. 3.2.1.1 Once the signal decision time and time period of the signal period are known, then capacitor C1 can be selected. Once C1 is selected, the designer should observe the RSSI signal with an oscilloscope and perform operational and/or bit error rate testing to confirm receiver performance. FIGURE 3-11: NEAR END OF THE SIGNAL PERIOD DECISION RSSI LOWPASS FILTERED Signal Decision OOK Signal Signal Period Signal Period Optimum sensitivity of the receiver with reasonable pulse distortion occurs when the RC filter time constant is between 1 and 2 times the signal period. If the time constant of the RC filter is set too short, there is little noise filtering benefit. However, if the time constant of the RC filter is set too long, the data pulses will become elongated causing inter-symbol interference. 3.2.1.2 If the bit decision occurs near the end of the signal period, then the time constant should be set at less than or equal to the signal period. Figure 3-11 illustrates this method. RSSI Signal 1τ to 2τ 3.2.2 Signal Decision If the bit decision occurs in the center of the signal period (such as KEELOQ decoders), then one or two times the RC filter time constant should be set at less than or equal to half the signal period. Figure 3-10 illustrates this method. The top trace represents the received on-off keying (OOK) signal. The bottom trace shows the RSSI signal after the RC low-pass filter. FIGURE 3-10: CENTER SIGNAL PERIOD DECISION RSSI LOW-PASS FILTERED Signal Decision OOK Signal Signal Period RSSI Signal COMPARATOR The internal operational amplifier is configured as a comparator. The RSSI signal is applied to OPA+ (Pin 20) and compared with a reference voltage on OPA(Pin 19) to determine the logic level of the received signal. The reference voltage can be dynamic or static. The choice of dynamic versus static reference voltage depends in part on the ratio of logical ones versus zeros of the data (this can also be thought of as the AC content of the data). Provided the ratio has an even number of logical ones versus zeros, a dynamic reference voltage can be generated with a simple low-pass filter. The advantage of the dynamic reference voltage is the increased receiver sensitivity compared to a fixed reference voltage. However, the comparator will output random data. The decoder (for example, a programmed PICmicro MCU or KEELOQ decoder) must distinguish between random noise and valid data. The choice of a static reference voltage depends in part on the DC content of the data. That is, the data has an uneven number of logical ones versus zeros. The disadvantage of the static reference voltage is decreased receiver sensitivity compared to a dynamic reference voltage. In this case, the comparator will output data without random noise. 1τ to 2τ 2003 Microchip Technology Inc. Preliminary DS70090A-page 15 rfRXD0420/0920 3.2.2.1 DYNAMIC REFERENCE VOLTAGE A dynamic reference voltage can be derived by averaging the received signal with a low-pass filter. The example ASK application circuit shown in Figure 3-9, the low-pass filter is formed by R1 and C2. The output of the low-pass filter is then fed to OPA-. The setting of the R1-C2 time constant depends on the ratio of logical ones versus zeros and a trade off in stability versus receiver reaction time. If the received signal has an even number of logical ones versus zeros, the time constant can be set relatively short. Thus the reference voltage can react quickly to changes in the received signal amplitude and differences in transmitters. However, it may not be as stable and can fluctuate with the ratio of logical ones and zeros. If the time constant is set long, the reference voltage will be more stable. However, the receiver cannot react as quickly upon the reception of a received signal. FIGURE 3-12: Selection of component values for R1 and C2 is an iterative process. First start with a time constant between 10 to 100 times the signal rate. Second, view the reference voltage against the RSSI signal to determine if the values are suitable. Figure 3-12 is an oscilloscope screen capture of an incoming RF square wave modulated signal (ASK on-off keying). The top trace is the data output of OPA (Pin 18). The two bottom traces are the RSSI signal (Pin 21, bottom square wave) and generated reference voltage (Pin 19, bottom trace centered in the RSSI square wave). The goal is to select values for R1 and C2 such that the reference voltage is in the middle of the RSSI signal. This reference voltage level provides the optimum data comparison of the incoming data signal. 3.2.2.2 STATIC REFERENCE VOLTAGE A static reference voltage can be derived by a voltage divider network. RSSI AND REFERENCE VOLTAGE COMPARISON OPA (Pin 18) RSSI OPA- (Pin 21) (Pin 19) DS70090A-page 16 Preliminary 2003 Microchip Technology Inc. TO ANTENNA MATCHING NETWORK ANT C14 330 pF +V 30 VSS 31 LNA IN 32 VDD 1 LNA 2 LNA GAIN 3 4 C17 MIXER1 5 7 29 VDD 28 Bias 10 kΩ 27 C3 +V 330 pF C11 1000 pF R3 1IF OUT Phase Detector and Charge Pump 9 VSS +V 12 13 33000 pF C8 26 Crystal Oscillator LNA OUT 14 15 X1 C1 10-47 pF 24 - 16 1.0 pF C33 C7 330 pF C9 OPTIONAL CRYSTAL TRIM CAPACITOR 25 IF Limiting Amplifier with RSSI 11 R2 390 Ω C12 1000 pF Frequency Synthesizer 10 F2 10.7 MHz IF Preamp 8 R4 470 Ω Fixed Divide by 16: rfRXD0420 32: rfRXD0920 1IF+ Voltage Controlled Oscillator 6 R5 470 Ω C10 OPTIONAL LOOP FILTER CAPACITOR 1IF IN C16 330 pF VDD 23 + DEMOD 17 680 pF C32 +V 10-12 pF C31 F3 OPA + - 18 RSSI 21 OPA+ 20 OPA19 C4 330 pF C30 330 pF RSSI RxDATA NOTE: Demodulator output low-pass capacitors C2 dependent on signal rate 10-47 pF 22 VDD L3 VSS C15 1IF- C13 1000 pF FBC2 +V 2IF OUT C18 330 pF LF FBC1 VSS DEM IN +V DEM OUT- +V VDD 2IF IN XTAL Preliminary ENRX MIXER2 DEM OUT+ OPA 2003 Microchip Technology Inc. VSS +V rfRXD0420/0920 FIGURE 3-13: FSK APPLICATION CIRCUIT DS70090A-page 17 VSS rfRXD0420/0920 3.3 Frequency Shift Keying (FSK) Figure 3-13 illustrates an example FSK application circuit. 3.3.1 FIGURE 3-14: LC DISCRIMINATOR EXAMPLE CIRCUIT R1 4.7 kΩ IF FILTER CONSIDERATIONS C3 0-56 pF As mentioned in the Section 3.1 above, IF filter bandwidth selection is a function of: • modulation (ASK, FSK or FM) • signal bandwidth • frequency and temperature tolerances of the transmitter and receiver components C1 1.0 pF C2 680 pF IF BWmin = (2 x 2400) + (2 x 24000) IF BWmin = 52800 Hz Add to this value the frequency and temperature tolerances of the transmitter and receiver components. FSK signals are more sensitive to group delay variations of the IF filter. Therefore, a filter with a low group delay variation should be used. As an alternative, a filter with wider than required bandwidth can be used because the group delay variation in the center of the bandpass will be relatively constant. FSK DETECTOR The demodulator (DEMOD) section consists of a phase detector (MIXER2) and amplifier creating a quadrature detector (also known as a phase coincidence detector) to demodulate the IF signal in FSK and FM modulation applications. The in-phase signal comes directly from the output of the IF limiting amplifier to MIXER2. The quadrature signal is created by an external tuned circuit from the output of the IF limiting amplifier (2IFOUT, Pin 15) AC-coupled to the MIXER2 DEMIN (Pin 16) input. 3.3.2.2 Ceramic Discriminator A no-tune solution can be constructed with a ceramic discriminator. Figure 3-15 illustrates an example ceramic discriminator circuit. The ceramic discriminator acts as a parallel tuned circuit at the IF frequency (for example, 10.7 MHz). The parallel capacitor C3 tunes the ceramic resonator. The high Q of this circuit enables higher output of the detector for small frequency deviations. However, smaller frequency deviations require better frequency tolerances at the transmitter and receiver. In order to detect wider deviation or off-frequency signals, the detector bandwidth has to be increased. This can be accomplished by reducing the Q of the tuned circuit. One method is to parallel a resistor across the ceramic discriminator. A second is to increase the value of the coupling capacitor C1 increasing the load on the detector. The result of reducing the Q of the discriminator will be that the detector output will be smaller. FIGURE 3-15: CERAMIC DISCRIMINATOR EXAMPLE CIRCUIT F1 CERAMIC DISCRIMINATOR LC Discriminator Preliminary C1 1.0 pF C3 10-12 pF C2 680 pF 15 16 DEM IN The external tuned circuit can be constructed from simple inductor-capacitor (LC) components. This type circuit produces and excellent output. However, one of the elements (L or C) must be tunable. Figure 3-14 illustrates an example LC discriminator circuit using a tunable capacitor. A similar circuit with a tunable inductor is also possible. Resistor R1 = 4.7 kΩ reduces the Q of the circuit so that frequency deviations of up to 75 kHz can be demodulated. DS70090A-page 18 DEM IN 16 2IF OUT 3.3.2.1 15 2IF OUT The occupied bandwidth of binary FSK signals is 2 times the peak frequency deviation plus 2 times the signal bandwidth. For example, if the data rate is 2400 bits per second Manchester encoded, the signal bandwidth is 4800 baud or 1200 Hz, and if the peak frequency deviation is 24 kHz, the minimum bandwidth of the IF filter is: 3.3.2 L1 3.3 µH 2003 Microchip Technology Inc. rfRXD0420/0920 3.3.3 POST DETECTOR FILTERING Care should be taken in selecting the values of capacitors C1 and C2 (Figure 3-13) so that the output of the detector is not distorted and receiver sensitivity improved. These values are chosen depending on the data signal rate. Generally, if the data signal rate is fast then the filter time constant can be set short. Conversely, if the signal rate is slow, the filter time constant can be set long. The designer should observe the output of the detector with an oscilloscope and perform operational and/or bit error rate testing to confirm receiver performance. 3.3.4 COMPARATOR The output of the DEMOD amplifier (DEMOUT+ and DEMOUT-, Pins 23 and 24) depends on the peak deviation of the FSK or FM signal and the Q of the external tuned circuit. DEMout+ and DEMout- are high impedance outputs with only a 20 µA current capability. The capacitance on these pins limit the maximum data signal rate. The nominal output voltage of these pins is 1.23V. 2003 Microchip Technology Inc. Preliminary DS70090A-page 19 C14 TO ANTENNA MATCHING NETWORK ANT 330 pF +V 30 VSS 31 LNAIN 32 VDD 1 LNA 2 LNA GAIN C15 3 4 C17 L3 LNA OUT 1IF IN 7 29 VDD IF Preamp 8 R4 470 Ω 9 10 kΩ R3 27 C3 +V 330 pF C11 1000 pF 28 Bias Phase Detector and Charge Pump Fixed Divide by 16: rfRXD0420 32: rfRXD0920 1IF+ Voltage Controlled Oscillator 6 C18 OPTIONAL LOOP FILTER CAPACITOR MIXER1 5 R5 470 Ω F1 10.7 MHz VSS +V 12 26 Crystal Oscillator 14 15 X1 24 NC - 16 1.0 pF C33 C4 330 pF C9 OPTIONAL CRYSTAL TRIM CAPACITOR 25 13 33000 pF C8 IF Limiting Amplifier with RSSI 11 Frequency Synthesizer 10 R2 390 Ω C12 1000 pF VDD 23 + DEMOD 17 680 pF C32 +V 10-12 pF C31 F3 22 VDD C16 330 pF 2IF OUT C1 330 pF VSS C13 1000 pF FBC2 +V DEM IN +V DEM OUT- +V FBC1 VSS 1IFLF 1IF OUT VDD 2IF IN XTAL Preliminary ENRX MIXER2 DEMOUT+ OPA + - 18 R33 33 kΩ RSSI 21 20 OPA+ 19 OPA- C4 330 pF OPA DS70090A-page 20 VSS +V 33 kΩ R32 100 pF C35 C34 100 pF R31 12 kΩ R30 6.8 kΩ RSSI C30 330 pF RxAudio rfRXD0420/0920 FIGURE 3-16: FM APPLICATION CIRCUIT 2003 Microchip Technology Inc. VSS rfRXD0420/0920 3.4 Frequency Modulation (FM) Figure 3-16 illustrates an example FM application circuit. 3.4.1 FSK DETECTOR FM demodulation is performed in the same manner as described in the FSK section above. 3.4.2 OPERATIONAL AMPLIFIER The internal operational amplifier is configured as an active low-pass filter. FM audio is typically de-emphasized. It is recommended that de-emphasis circuitry be connected at the output of the operational amplifier rather than the output of the detector. 2003 Microchip Technology Inc. Preliminary DS70090A-page 21 rfRXD0420/0920 4.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Supply voltage...................................................................................................................................................0 to +7.0V Input voltage...........................................................................................................................................-0.3 to VCC+0.3V Input RF level .........................................................................................................................................................10dBm Storage temperature .................................................................................................................................... -40 to +125C † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DS70090A-page 22 Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 4.1 DC Characteristics: rfRXD0420 (Industrial) Standard Operating Conditions (unless otherwise stated) Operating Temperature -40°C ≤ TA ≤ +85°C DC CHARACTERISTICS Param No. * Sym Characteristic VCC Supply Voltage ISTBY Standby Current ICC Supply Current Max Units 2.5 — 5.5 V 2.7 — Conditions frf < 400 MHz 5.5 V frf > 400 MHz 100 nA ENRX = 0 5.0 6.5 8.0 mA LNAGAIN = 1 6.5 8.2 10.0 mA LNAGAIN = 0 VOPA Op Amp input voltage offset -20 — 20 mV IOPA Op Amp input current offset -50 — 50 nA IBIAS Op Amp input bias current -100 VRSSI RSSI voltage 100 nA 0.5 1.0 1.5 V LNAGAIN = 1 1.25 1.9 2.45 V LNAGAIN = 0 Data in “Typ” column is at 3V, 23°C unless otherwise stated. These parameters are for design guidance only and are not tested. 4.2 AC Characteristics: rfRXD0420 (Industrial) Standard Operating Conditions (unless otherwise stated) Operating Temperature -40°C ≤ TA ≤ +85°C AC CHARACTERISTICS Param No. † Typ† These parameters are characterized but not tested. † * Min Sym Characteristic TFSK Start-up time - FSK/FM TASK Start-up time - ASK Min Typ† Max Units Conditions 0.9 ms ENRX = 0 to 1 R1xC1 +TFSK ms Note 1 dBm Note 2 Sensitivity - Narrowband FSK -111 Sensitivity - Wideband FSK -104 dBm Note 3 Sensitivity - Narrowband ASK -109 dBm Note 4 Sensitivity - Wideband ASK -106 dBm Note 5 Input RF level maximum FSK/ FM 0 dBm LNAGAIN = 1 Input RF level maximum ASK -10 dBm LNAGAIN = 1 These parameters are characterized but not tested. Data in “Typ” column is at 3V, 23°C, frf = 433.6 MHz, IF = 10.7 MHz unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Dependant on ASK detector time constant. 2: IF bandwidth = 40 kHz, ∆f = +/- 15 kHz, BER <= 3 x 10-3 3: IF bandwidth = 150 kHz, ∆f = +/- 50 kHz, BER <= 3 x 10-3 4: IF bandwidth = 40 kHz, BER <= 3 x 10-3 5: IF bandwidth = 150 kHz, BER <= 3 x 10-3 2003 Microchip Technology Inc. Preliminary DS70090A-page 23 rfRXD0420/0920 4.3 DC Characteristics: rfRXD0920 (Industrial) Standard Operating Conditions (unless otherwise stated) Operating Temperature -40°C ≤ TA ≤ +85°C DC CHARACTERISTICS Param No. * Sym Characteristic VCC Supply Voltage ISTBY Standby Current ICC Supply Current Max Units 2.5 — 5.5 V frf < 900 MHz 3.3 — Conditions 5.5 V frf > 900 MHz 100 nA ENRX = 0 6.0 7.5 9.0 mA LNAGAIN = 1 7.5 9.2 11.0 mA LNAGAIN = 0 VOPA Op Amp input voltage offset -20 — 20 mV IOPA Op Amp input current offset -50 — 50 nA IBIAS Op Amp input bias current -100 VRSSI RSSI voltage 100 nA 0.5 1.0 1.5 V LNAGAIN = 1 1.25 1.9 2.45 V LNAGAIN = 0 Data in “Typ” column is at 3V, 23°C unless otherwise stated. These parameters are for design guidance only and are not tested. AC Characteristics: rfRXD0920 (Industrial) 4.4 Standard Operating Conditions (unless otherwise stated) Operating Temperature -40°C ≤ TA ≤ +85°C AC CHARACTERISTICS Param No. † Typ† These parameters are characterized but not tested. † * Min Sym Characteristic TFSK Start-up time - FSK/FM TASK Start-up time - ASK Min Typ† Max Units Conditions 0.9 ms ENRX = 0 to 1 R1xC1 + TFSK ms Note 1 Sensitivity - Narrowband FSK -109 dBm Note 2 Sensitivity - Wideband FSK -102 dBm Note 3 Sensitivity - Narrowband ASK -108 dBm Note 4 Sensitivity - Wideband ASK -104 dBm Note 5 Input RF level maximum FSK/ FM 0 dBm LNAGAIN = 1 Input RF level maximum ASK -10 dBm LNAGAIN = 1 These parameters are characterized but not tested. Data in “Typ” column is at 3V, 23°C, frf = 433.6 MHz, IF = 10.7 MHz unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Dependant on ASK detector time constant. 2: IF bandwidth = 40 kHz, ∆f = +/- 15 kHz, BER <= 3 x 10-3 3: IF bandwidth = 150 kHz, ∆f = +/- 50 kHz, BER <= 3 x 10-3 4: IF bandwidth = 40 kHz, BER <= 3 x 10-3 5: IF bandwidth = 150 kHz, BER <= 3 x 10-3 DS70090A-page 24 Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 32-Lead LQFP Example XXXXXXXXXXXX XXXXXXXXXXXX XXXXXXXXXXXX YYWWNNN Legend: Note: * XX...X Y YY WW NNN rfRXD0420 02123ABC Customer specific information* Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. Standard PICmicro device marking consists of Microchip part number, year code, week code, and traceability code. For PICmicro device marking beyond this, certain price adders apply. Please check with your Microchip Sales Office. For QTP devices, any special marking adders are included in QTP price. 2003 Microchip Technology Inc. Preliminary DS70090A-page 25 rfRXD0420/0920 5.2 Package Details The following section gives the technical details of the package. 32-Lead Plastic Low Profile Quad Flat Package (LQ) 7 x 7 x 1.4 mm Body Not available at this time. DS70090A-page 26 Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 ON-LINE SUPPORT Microchip provides on-line support on the Microchip World Wide Web site. The web site is used by Microchip as a means to make files and information easily available to customers. To view the site, the user must have access to the Internet and a web browser, such as Netscape® or Microsoft® Internet Explorer. Files are also available for FTP download from our FTP site. Connecting to the Microchip Internet Web Site SYSTEMS INFORMATION AND UPGRADE HOT LINE The Systems Information and Upgrade Line provides system users a listing of the latest versions of all of Microchip's development systems software products. Plus, this line provides information on how customers can receive the most current upgrade kits.The Hot Line Numbers are: 1-800-755-2345 for U.S. and most of Canada, and 1-480-792-7302 for the rest of the world. The Microchip web site is available at the following URL: 092002 www.microchip.com The file transfer site is available by using an FTP service to connect to: ftp://ftp.microchip.com The web site and file transfer site provide a variety of services. Users may download files for the latest Development Tools, Data Sheets, Application Notes, User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also available, including listings of Microchip sales offices, distributors and factory representatives. Other data available for consideration is: • Latest Microchip Press Releases • Technical Support Section with Frequently Asked Questions • Design Tips • Device Errata • Job Postings • Microchip Consultant Program Member Listing • Links to other useful web sites related to Microchip Products • Conferences for products, Development Systems, technical information and more • Listing of seminars and events 2003 Microchip Technology Inc. Preliminary DS70090A-page 27 rfRXD0420/0920 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this document. To: Technical Publications Manager RE: Reader Response Total Pages Sent ________ From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Device: rfRXD0420/0920 Y N Literature Number: DS70090A Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS70090A-page 28 Preliminary 2003 Microchip Technology Inc. rfRXD0420/0920 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X Temperature Range /XX XXX Package Pattern Device rfRXD0420-I/LQ UHF ASK/FSK/FM Receiver rfRXD0920-I/LQ UHF ASK/FSK/FM Receiver rfRXD0420T-I/LQ UHF ASK/FSK/FM Receiver (Tape & Reel) rfRXD0920T-I/LQ UHF ASK/FSK/FM Receiver (Tape & Reel) Temperature Range I Package LQ = Pattern Special Requirements = Examples: a) rfRXD0420-I/LQ = Industrial temp, LQFP package b) rfRXD0920-I/LQ = Industrial temp, LQFP package -40°C to +85°C LQFP32 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2003 Microchip Technology Inc. Preliminary DS70090A-page29 rfRXD0420/0920 NOTES: DS70090A-page30 Preliminary 2003 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE and PowerSmart are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Accuron, dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo, PowerTool, rfPIC, Select Mode, SmartSensor, SmartShunt, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2003, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2003 Microchip Technology Inc. Preliminary DS70090A - page 31 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Japan Corporate Office Australia 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 Atlanta 3780 Mansell Road, Suite 130 Alpharetta, GA 30022 Tel: 770-640-0034 Fax: 770-640-0307 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401-2402, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1812, 18/F, Building A, United Plaza No. 5022 Binhe Road, Futian District Shenzhen 518033, China Tel: 86-755-82901380 Fax: 86-755-82966626 China - Qingdao Rm. B503, Fullhope Plaza, No. 12 Hong Kong Central Rd. Qingdao 266071, China Tel: 86-532-5027355 Fax: 86-532-5027205 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 12/05/02 DS70090A-page 32 Preliminary 2003 Microchip Technology Inc.