ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Order this document
by MRF373/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
470 – 860 MHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
• Excellent Thermal Stability
CASE 360B–05, STYLE 1
NI–360
MRF373R1
ARCHIVED 2005
• 100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
• In Tape and Reel. R1 = 500 units per 32 mm,
13 inch Reel.
CASE 360C–05, STYLE 1
NI–360S
MRF373SR1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
ID
7
Adc
PD
173
1.33
W
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Drain Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MRF373SR1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
MRF373SR1
RθJC
0.75
°C/W
Thermal Resistance, Junction to Case
MRF373R1
RθJC
1
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA
RF DEVICE DATA
Motorola,
Inc. 2002
MRF373R1 MRF373SR1
1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
–
–
1
µAdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
–
–
1
µAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.6
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.9
–
S
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
–
79
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
–
46
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
–
4
–
pF
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
Gps
13
14.7
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
η
50
54
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
ψ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID =1 µA)
ON CHARACTERISTICS
ARCHIVED 2005
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS, CW Operation
No Degradation in Output Power
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
Gps
–
11.2
–
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
η
–
40
–
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD
–
–30
–
dBc
MRF373R1 MRF373SR1
2
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ARCHIVED 2005
C1
C2
C3
C4, C5, C6
C7, C8
C9
C10, C13
C11
C12
C14
C15
L1
R1
R2
4.7 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
6.8 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
47 pF, B Case Chip Capacitor, ATC
0.2 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 50 V, Kemet P/N C1825C225
22 mF, 50 V, Kemet P/N T491D226K50AS
2) 1.0 mF, 50 V, Kemet P/N C1825C105
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils, εr = 2.55
Heatsink
Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3″ x 5″ Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2
Insert for LDMOS m250 3″ x 5″ Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373R1)
MRF373
Figure 2. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373R1)
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
3
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Figure 3. MRF373R1 Narrowband Test Fixture Photo
ARCHIVED 2005
C1, C2
C3
C4, C11
C5, C10
C6
C7
C8
C9
C20, C23
C21
C24
C22
C25
L1
R1
R2
18 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
0.8 pF, B Case Chip Capacitor, ATC
68 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT
2) 1.0 mF, 50 V, Kemet P/N C1825C105
22 mF, 35 V, Kemet P/N T491D226K35AS
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils, εr = 2.55
(new PCB’s available from CMR)
Heatsink
Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3″ x 5″ Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2S
Insert for LDMOS m250S 3″ x 5″ Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373SR1)
MRF373R1 MRF373SR1
4
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MRF373S
ARCHIVED 2005
Figure 5. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373SR1)
Figure 6. MRF373SR1 Narrowband Test Circuit Photo
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
5
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS FOR MRF373R1 IN SINGLE–ENDED FIXTURE
3 . 3 012
/ 3 -
-
-
-
-
')* + !,-"
η
3 / 3 -
')* 3 + !+"
$#+##!,"
#
#
##!,"
$#+##!,"
$
Figure 7. Power Gain versus Output Power
. / !012"
η ###!4"
Figure 8. Performance in Narrowband Circuit
ARCHIVED 2005
#
#!$"
%&&
'&&
(&&
!
"
Figure 9. Capacitance versus Voltage
Table 1. Common Source S–Parameters (VDS = 28 V, ID = 2.0 A)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
400
0.921
182
2.23
52
0.009
39
0.824
184
450
0.922
181
1.95
49
0.009
53
0.832
184
500
0.924
180
1.70
46
0.010
64
0.841
184
550
0.926
179
1.49
42
0.011
72
0.851
183
600
0.929
178
1.31
38
0.013
78
0.860
183
650
0.932
177
1.16
35
0.015
81
0.870
182
700
0.936
176
1.03
31
0.017
82
0.881
182
750
0.940
176
0.93
28
0.019
82
0.892
181
800
0.945
175
0.84
26
0.021
82
0.904
180
850
0.951
174
0.78
24
0.023
80
0.917
180
900
0.957
173
0.72
24
0.025
78
0.929
179
MRF373R1 MRF373SR1
6
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MRF373S
ARCHIVED 2005
Vertical Balun Mounting Detail
)*$)* !> '9- -%:('&*(%$"
0'*'('86 7(*%:68 012 68)<
'=7(& ! -%8 *9%:;"
)*$)* !> '9- -%:('&*(%$"
)5&*(6*7 ! -%8 *9%:;"
'*7?
(%- 68)< &' *96* 6 -%8 @*65A
.%*& %<*' *97 -6%< @&8'*A (7&)8*%<=
%< 68)< &'8,7( $6,& 57%<= 87B78 C%*9
*97 &)5&*(6*7 &'8,7( $6,& C97<
.)88D %<&7(*7,>
<$)*
! '9- -%:('&*(%$"
(')<,
-%8 &8'* :)*
')* *' 6::7$* 68)<
Figure 10. MRF373SR1 Broadband Push–Pull Component Layout
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
7
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Table 2. MRF373SR1 Broadband Push–Pull Application Parts List
Designation
Description
1.0 pF, AVX, P12101J1R0BBT
C2, C4, C10
10 pF, AVX, P12101J100GBT
C3A, B
120 pF, 300 V, AVX, AQ149M121JAJBE
C5, C6, C9
12 pF, AVX, P12101J120GBT
C7, C8
18 pF, AVX, P12101J180GBT
C11
6.8 pF, AVX, P12101J6R8BBT
C12
4.7 pF, AVX, P12101J4R7BBT
C13, C18A, B
3.3 pF, AVX, P12101J3R3BBT
C14A, B
100 pF, 500 V, AVX, AQ147M101JAJBE
C15
2.7 pF, AVX, P12101J2R7BBT
C16A, B
3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT
C17A, B, C19A, B
22 mF, 35 V, Kemet P/N T491D226K35AS
L1A, B, L3A, B, L4, L5
8.0 nH, Coilcraft P/N A03T
L2, L6
12.5 nH, Coilcraft P/N A04T
R1A, B
22 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
R2A, B
10 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
R3
390 Ω, Vishay Dale Chip Resistor (1206)
R4
2.4 kΩ, Vishay Dale Chip Resistor (1206)
R5T
470 Ω Thermistor, KOA SPEER MOT P/N 0680149M01
PCB
MRF373 PP Printed Circuit Board Rev 2C,
Rogers RO4350, Height 30 mils, ε( = 3.48
Balun A, B
Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01,
Rogers RO3010, Height 50 mils, ε( = 10.2
ARCHIVED 2005
C1
MRF373R1 MRF373SR1
8
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
3 ,:
D/ 3 012
/ 3 - $7( &%,7
012
012
012
012
012
012
3 ,:
D/ 3 012
/ 3 - $7( &%,7
$&#+##!,"
0#
0
#
#!,:"
TYPICAL TWO–TONE BROADBAND CHARACTERISTICS
')* + !+
" Figure 11. Intermodulation Distortion versus Output
Power (MRF373S Broadband Push–Pull Fixture)
')* + !+
" Figure 12. Broadband Power Gain versus Output
Power (MRF373S Broadband Push–Pull Fixture)
η ###!4"
ARCHIVED 2005
3 ,:
D/ 3 012
/ 3 - $7( &%,7
012
012
012
')* + !+
" Figure 13. Efficiency versus Output Power
(MRF373S Broadband Push–Pull Fixture)
MOTOROLA RF DEVICE DATA
MRF373R1 MRF373SR1
9
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ARCHIVED 2005
NOTES
MRF373R1 MRF373SR1
10
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
PACKAGE DIMENSIONS
Q
666
2X
G
B
0
0
0
?
> 0 0 >0>
> 0? 1>
> 0 1 0 > !>" +
0 E >
1
3
B
2
(FLANGE)
2X
D
555 0 2X
0
R
K
(LID)
0
:::
0
0
0
F
H
:::
N
(LID)
0
0
0
S
C
E
(INSULATOR)
666
555
M
0
0
(INSULATOR)
A
ARCHIVED 2005
0
SEATING
PLANE
T
A
0
0
0
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
?
> > > CASE 360B–05
ISSUE F
NI–360
MRF373R1
(FLANGE)
B
?
> 0 0 >0>
> 0? 1>
> 0 1 0 > !>" +
0 E >
1
2
B
(FLANGE)
2X
2X
K
0
D
555
0
0
R
(LID)
:::
0
0
0
F
H
N
(LID)
:::
0
0
0
S
(INSULATOR)
E
C
T
M
SEATING
PLANE
(INSULATOR)
555
0
MILLIMETERS
MIN
MAX
>
>
>
>
>
>
>
>
>
>
>
>
>#
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>#
>#
>#
A
A
PIN 3
INCHES
MIN
MAX
>
>
>
>
>
>
>
>
>
>
>
>
>#
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>#
>#
>#
0
0
MOTOROLA RF DEVICE DATA
666
0
0
0
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>#
>#
>#
MILLIMETERS
MIN
MAX
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>
>#
>#
>#
?
> > > CASE 360C–05
ISSUE D
NI–360S
MRF373SR1
MRF373R1 MRF373SR1
11
Archived 2005
ARCHIVED 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture
of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their
respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334
Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors/
MRF373R1 MRF373SR1
12
◊
MOTOROLA RF DEVICE DATA
MRF373/D
Archived 2005