MOTOROLA MRF373

MOTOROLA
Order this document
by MRF373/D
SEMICONDUCTOR TECHNICAL DATA
Product Is Not Recommended for New Design.
The next generation of higher performance products are in development. Visit our online
Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates.
MRF373
MRF373S
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
60 W, 470 – 860 MHz, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common source amplifier applications in
28 volt transmitter equipment.
• Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
• Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
D
Power Gain – 11.2 dB
Efficiency – 40%
IMD – –30 dBc
CASE 360B–03, STYLE 1
(MRF373)
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
CASE 360C–03, STYLE 1
(MRF373S)
G
S
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Gate–Source Voltage
VGS
± 20
Vdc
ID
7
Adc
PD
173
1.33
W
W/°C
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
Drain Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MRF373S
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF373S
RθJC
0.75
°C/W
Thermal Resistance, Junction to Case
MRF373
RθJC
1
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA
WIRELESS SEMICONDUCTOR
 Motorola,
Inc. 2000
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
–
–
1
µAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
–
–
1
µAdc
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.6
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.9
–
S
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
–
79
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
–
46
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
–
4
–
pF
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
Gps
13
14.7
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz)
η
50
54
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
ψ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID =1 µA)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS, CW Operation
No Degradation in Output Power
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
Gps
–
11.2
–
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
η
–
40
–
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
IMD
–
– 30
–
dBc
MRF373 MRF373S
2
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
VDD
VGG
C10
R2
C15
C14
C13
R1
C4
C1
Z7
RF
INPUT
C11
C12
L1
Z8
Z9
Z10
Z12
Z11
RF
OUTPUT
C7
Z1
Z2
Z3
Z4
Z5
Z6
C2
C3
C9
C8
C6
C1
C2
C3
C4, C5, C6
C7, C8
C9
C10, C13
C11
C12
C14
C15
L1
R1
R2
C5
4.7 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
6.8 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
47 pF, B Case Chip Capacitor, ATC
0.2 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 50 V, Kemet P/N C1825C225
22 mF, 50 V, Kemet P/N T491D226K50AS
2) 1.0 mF, 50 V, Kemet P/N C1825C105
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils, εr = 2.55
Heatsink
Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3″ x 5″ Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2
Insert for LDMOS m250 3″ x 5″ Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373)
TO GATE
BIAS SUPPLY
TO DRAIN
BIAS SUPPLY
R2
C14
C15
C11
C13
R1
C10
L1
C4
C1
C8
C2
C6
C12
C3
C7
C9
C5
MRF373
Figure 2. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373)
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
3
Figure 3. MRF373 Narrowband Test Fixture Photo
VDD
VGG
C20
R2
C25
C24
C23
R1
C7
C1
Z10
RF
INPUT
Z11
Z12
C21
C22
L1
Z13
Z14
Z16
Z15
RF
OUTPUT
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C2
C3
C4
C6
C10
C11
C1, C2
C3
C4, C11
C5, C10
C6
C7
C8
C9
C20, C23
C21
C24
C22
C25
L1
R1
R2
C9
C8
18 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
0.8 pF, B Case Chip Capacitor, ATC
68 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT
2) 1.0 mF, 50 V, Kemet P/N C1825C105
22 mF, 35 V, Kemet P/N T491D226K35AS
10 mF, 35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils, εr = 2.55
(new PCB’s available from CMR)
Heatsink
Motorola P/N 95–11LDMOSKPS–1
LDMOS m250 3″ x 5″ Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2S
Insert for LDMOS m250S 3″ x 5″ Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373S)
MRF373 MRF373S
4
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
TO GATE
BIAS SUPPLY
TO DRAIN
BIAS SUPPLY
R2
C24
C25
C21
C23
R1
C11
C20
L1
C7
C1
C10
C2
C9
C22
C3
C4
C5
C6
C8
MRF373S
Figure 5. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373S)
Figure 6. MRF373S Narrowband Test Circuit Photo
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
5
TYPICAL CHARACTERISTICS FOR MRF373 IN SINGLE–ENDED FIXTURE
22
VDD = 28 V
f = 860 MHz
G p, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
G p, POWER GAIN (dB)
IDQ = 500 mA
400 mA
300 mA
15
200 mA
100 mA
14
13
30
40
35
45
Pout, OUTPUT POWER (dBm)
VDD = 28 V
IDQ = 200 mA
Pout = 60 W (CW)
20
17
16
58
18
16
η
IRL
57
η , DRAIN EFFICIENCY (%)
18
56
55
Gp
14
54
12
53
10
52
8
51
6
800
50
Figure 7. Power Gain versus Output Power
50
820
840
880
860
f, FREQUENCY (MHz)
900
920
Figure 8. Performance in Narrowband Circuit
120
C, CAPACITANCE (pF)
100
Ciss
80
60
Coss
40
20
Crss
0
0
10
20
30
40
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
50
Figure 9. Capacitance versus Voltage
Table 1. Common Source S–Parameters (VDS = 28 V, ID = 2.0 A)
f
MHz
S11
400
|S11|
0.921
450
0.922
500
S21
φ
182
|S21|
2.23
181
1.95
0.924
180
550
0.926
600
S12
φ
52
|S12|
0.009
49
0.009
1.70
46
179
1.49
0.929
178
650
0.932
700
0.936
750
S22
φ
φ
39
|S22|
0.824
184
53
0.832
184
0.010
64
0.841
184
42
0.011
72
0.851
183
1.31
38
0.013
78
0.860
183
177
1.16
35
0.015
81
0.870
182
176
1.03
31
0.017
82
0.881
182
0.940
176
0.93
28
0.019
82
0.892
181
800
0.945
175
0.84
26
0.021
82
0.904
180
850
0.951
174
0.78
24
0.023
80
0.917
180
900
0.957
173
0.72
24
0.025
78
0.929
179
MRF373 MRF373S
6
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
C19A
R3
R5T
R4
R2A
R6
C17A
C16A
L3A
R7A
C15
C18A
L5
C2
R1A
C3A
C5
C4
C1
L6
L2
C6
L4
C3B
L1A
C7 C8
C9 C10
R1B
C14A
C12
C11
L1B
C13
C14B
C18B
R7B
L3B
C16B
R2B
C17B
MRF373S
C19B
Vertical Balun Mounting Detail
Output 2
(12.5 ohm microstrip)
Motorola Vertical 660 MHz Balun
Rogers RO3010 (50 mil thick)
Output 1
(12.5 ohm microstrip)
PCB Substrate (30 mil thick)
Note:
Trim Balun PCB so that a 35 mil “tab”
fits into the main PCB “slot” resulting
in Balun solder pads being level with
the PCB substrate solder pads when
fully inserted.
Input
(50 ohm microstrip)
Ground
55 mil slot cut
out to accept Balun
Figure 10. MRF373S Broadband Push–Pull Component Layout
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
7
Table 2. MRF373S Broadband Push–Pull Application Parts List
Designation
Description
C1
1.0 pF, AVX, P12101J1R0BBT
C2, C4, C10
10 pF, AVX, P12101J100GBT
C3A, B
120 pF, 300 V, AVX, AQ149M121JAJBE
C5, C6, C9
12 pF, AVX, P12101J120GBT
C7, C8
18 pF, AVX, P12101J180GBT
C11
6.8 pF, AVX, P12101J6R8BBT
C12
4.7 pF, AVX, P12101J4R7BBT
C13, C18A, B
3.3 pF, AVX, P12101J3R3BBT
C14A, B
100 pF, 500 V, AVX, AQ147M101JAJBE
C15
2.7 pF, AVX, P12101J2R7BBT
C16A, B
3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT
C17A, B, C19A, B
22 mF, 35 V, Kemet P/N T491D226K35AS
L1A, B, L3A, B, L4, L5
8.0 nH, Coilcraft P/N A03T
L2, L6
12.5 nH, Coilcraft P/N A04T
R1A, B
22 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
R2A, B
10 Ω, Vishay Dale Chip Resistor, 1/4 W (1206)
R3
390 Ω, Vishay Dale Chip Resistor (1206)
R4
2.4 kΩ, Vishay Dale Chip Resistor (1206)
R5T
470 Ω Thermistor, KOA SPEER MOT P/N 0680149M01
PCB
MRF373 PP Printed Circuit Board Rev 2C,
Rogers RO4350, Height 30 mils, εr = 3.48
Balun A, B
Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01,
Rogers RO3010, Height 50 mils, εr = 10.2
MRF373 MRF373S
8
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
15
–10
VDD = 28 Vdc
DFREQUENCY = 6 MHz
IDQ = 250 mA per side
–15
–20
–25
–30
470 MHz
–35
660 MHz
–40
–45
VDD = 28 Vdc
DFREQUENCY = 6 MHz
IDQ = 250 mA per side
14
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL TWO–TONE BROADBAND CHARACTERISTICS
13
12
860 MHz
11
660 MHz
10
470 MHz
9
860 MHz
–50
8
1
10
100
Pout, OUTPUT POWER (WATTS PEP)
1000
Figure 11. Intermodulation Distortion versus Output
Power (MRF373S Broadband Push–Pull Fixture)
1
10
100
Pout, OUTPUT POWER (WATTS PEP)
1000
Figure 12. Broadband Power Gain versus Output
Power (MRF373S Broadband Push–Pull Fixture)
η , DRAIN EFFICIENCY (%)
D
50
VDD = 28 Vdc
DFREQUENCY = 6 MHz
IDQ = 250 mA per side
40
860 MHz
660 MHz
30
470 MHz
20
10
0
1
10
100
Pout, OUTPUT POWER (WATTS PEP)
1000
Figure 13. Efficiency versus Output Power
(MRF373S Broadband Push–Pull Fixture)
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
9
NOTES
MRF373 MRF373S
10
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
NOTES
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
MRF373 MRF373S
11
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030” AWAY FROM
EDGE OF FLANGE.
G
1
–B–
DIM
A
B
C
D
E
F
G
H
K
N
Q
3
Q 2 PL
2
K
0.25 (0.010)
D
E
H
T A
M
B
M
C
F
N
M
–T–
–A–
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
2
K
E
MILLIMETERS
MIN
MAX
20.07
20.57
5.59
6.09
3.18
4.45
5.21
5.71
1.27
1.77
0.11
0.15
14.27 BSC
1.96
2.21
5.47
6.47
8.89
9.39
3.05
3.55
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 360B–03
ISSUE D
(MRF373)
1
INCHES
MIN
MAX
0.790
0.810
0.220
0.240
0.125
0.175
0.205
0.225
0.050
0.070
0.004
0.006
0.562 BSC
0.077
0.087
0.215
0.255
0.350
0.370
0.120
0.140
DIM
A
B
C
D
E
F
H
K
N
D
N
F
H
3
C
–T–
SEATING
PLANE
INCHES
MIN
MAX
0.370
0.390
0.220
0.240
0.105
0.155
0.205
0.225
0.035
0.045
0.004
0.006
0.057
0.067
0.085
0.115
0.350
0.370
MILLIMETERS
MIN
MAX
9.40
9.91
5.59
6.09
2.67
3.94
5.21
5.71
0.89
1.14
0.11
0.15
1.45
1.70
2.16
2.92
8.89
9.39
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
–A–
CASE 360C–03
ISSUE B
(MRF373S)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MRF373 MRF373S
12
MRF373/D
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA