MCH5810 Ordering number : ENN8194 MCH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage(*1) Drain Current (DC) Drain Current (Pulse) VDSS VGSS --30 --9 V ID --0.4 A IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V --1.6 A 0.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 150 mA Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 3 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QK (*1) : When designing a circuit using this product, that this P-channel MOSFET has a gate (oxide film) protection diode connected only between its gate and source. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12505PE TS IM TB-00001111 No.8194-1/6 MCH5810 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 VDS=--30V, VGS=0 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=--8V, VDS=0 yfs RDS(on)1 VDS=--10V, ID=--0.2A Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 Ciss Input Capacitance --30 VDS=--10V, ID=--100µA V --0.4 0.2 --1 µA --1 µA --1.4 V Ω 0.42 S ID=--0.2A, VGS=--4.5V ID=--0.1A, VGS=--2.5V 1.4 1.8 2.0 2.8 VDS=--10V, f=1MHz 40 Ω pF Output Capacitance Coss pF Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 8 Reverse Transfer Capacitance 4.5 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 5 ns See specified Test Circuit. 10 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 5 ns VDS=--10V, VGS=--4.5V, ID=--0.4A See specified Test Circuit. 0.83 nC nC Gate-to-Source Charge Qgs Qgd VDS=--10V, VGS=--4.5V, ID=--0.4A VDS=--10V, VGS=--4.5V, ID=--0.4A 0.25 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--0.4A, VGS=0 --1.0 --1.5 V VR VF 1 IR=0.5mA IF=100mA 0.32 0.36 V VF 2 0.41 V 45 µA Interterminal Capacitance IF=150mA VR=6V VR=10V, f=1MHz 0.35 IR C Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 0.17 nC [SBD] Reverse Voltage Forward Voltage Reverse Current Package Dimensions unit : mm 2195 15 10 0.25 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 0.15 2 1 0.07 1.6 1 5 2.0 4 (Bottom view) 0.85 0.25 2.1 4 5 3 ns Electrical Connection 0.3 0.65 pF 10 5 4 V 1 2 2 3 Top view 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 3 (Top view) SANYO : MCPH5 No.8194-2/6 MCH5810 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --15V Duty≤10% D 50Ω VOUT PW=10µs D.C.≤1% 100Ω 10mA 100mA ID= --0.2A RL=75Ω VIN 10Ω 100mA VIN 0V --4.5V 10µs --5V G trr MCH5810 50Ω S V V .5 --2 --3 .0 V --3. 5 V --0.45 --0.40 --0.30 --0.25 --0.20 5°C --0.15 25° C --0.10 --0.05 --0.05 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 Drain-to-Source Voltage, VDS -- V IT07653 RDS(on) -- VGS [MOSFET] 5.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4.5 4.0 ID= --0.2A 3.5 3.0 --0.1A 2.5 2.0 1.5 1.0 0.5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT08162 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT07654 RDS(on) -- Ta [MOSFET] 4.0 Ta=25°C --1.0 --0.5 C VGS= --1.5V --0.10 [MOSFET] VDS= --10V --25 ° --0.15 --0.35 Ta= 7 0V --0.20 ID -- VGS --0.50 --2.0 --6. --4.5V 0V --4. Drain Current, ID -- A --0.25 [MOSFET] Ta= --25 °C 75° C 25° C ID -- VDS --0.30 Drain Current, ID -- A P.G 3.5 3.0 .5V = --2 VGS , A --0.1 I D= --4.5V S= VG , A 2 0. I D= -- 2.5 2.0 1.5 1.0 0.5 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 IT07656 No.8194-3/6 MCH5810 yfs -- ID 3 C 5° --2 = °C Ta 75 0.1 °C 25 7 5 3 3 2 --0.1 7 5 3 2 --0.01 7 5 2 --0.001 2 3 5 7 --0.01 2 3 5 7 --0.1 2 SW Time -- ID 3 3 5 7 --1.0 IT07657 0 [MOSFET] --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT08697 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] 60 VDS= --15V VGS= --4.5V 2 50 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VGS=0 3 2 Drain Current, ID -- A td(off) 10 td(on) 7 tf tr 5 Ciss 40 30 20 10 3 2 5 3 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Total Gate Charge, Qg -- nC RDS(on) -- ID 5 --15 --20 --25 3 2 Ta=75°C 25°C --25°C 1.0 7 5 --0.01 0.9 2 3 5 7 2 --0.1 3 5 Drain Current, ID -- A IT08944 ASO [MOSFET] [MOSFET] 2 <10µs 10 0 1m µs s IDP= --1.6A --1.0 Drain Current, ID -- A Ta=75°C 2 --25°C 25°C 7 --1.0 IT08700 3 VGS= --2.5V 3 7 5 10 ID= --0.4A m DC 3 op 10 er 2 s ati on --0.1 7 (T a= Operation in this area is limited by RDS(on). 5 s 0m 25 °C ) 3 1.0 2 7 --0.01 --30 VGS= --4.5V --3.5 0.1 --10 Drain-to-Source Voltage, VDS -- V IT08163 RDS(on) -- ID [MOSFET] [MOSFET] VDS= --10V ID= --400mA 0 --5 IT08698 VGS -- Qg --4.5 0 7 Drain Current, ID -- A --4.0 Coss Crss 0 2 --0.1 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω [MOSFET] C 25°C --25°C 5 0.01 --0.001 Gate-to-Source Voltage, VGS -- V --1.0 7 5 Ta=75 ° 7 2 IF -- VSD [MOSFET] VDS= --10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 1.0 2 3 5 7 --0.1 2 Drain Current, ID -- A 3 5 7 --1.0 IT08165 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT08701 No.8194-4/6 MCH5810 PD -- Ta Allowable Power Dissipation, PD -- W 0.8 [MOSFET] M 0.6 ou nte do na ce ram 0.4 ic bo ard (9 00 mm 0.2 2 ✕0 .8m m) 1u nit 0 0 20 40 60 80 100 140 120 160 Ambient Temperature, Ta -- °C IT08702 IF -- VF [SBD] 5 Reverse Current, IR -- µA 5° 10 C 0° C 75 °C 50 ° 25 C °C 3 2 Ta =1 2 Forward Current, IF -- mA 3 2 100 7 5 10 7 5 3 2 1.0 7 5 3 [SBD] Ta=125°C 100°C 1000 7 5 3 2 75°C 100 7 5 3 2 50°C 25°C 10 7 5 3 2 1.0 0.1 0.2 0.3 0.4 Forward Voltage, VF -- V 0.6 0.5 (2) (4) (3) 0.4 0.3 Rectangular wave 0.2 θ Sine wave 360° 0.1 0 0 180° 360° 0.1 0.2 0.3 0.4 4 0.5 Average Forward Current, IO -- A 0.6 0.7 IT08705 6 8 10 12 14 Reverse Voltage, VR -- V [SBD] (1) 2 IT08703 PF(AV) -- IO (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0 0.5 16 IT08704 C -- VR 7 Interterminal Capacitance, C -- pF 0 Average Forward Power Dissipation, PF(AV) -- W IR -- VR 10000 7 5 3 2 [SBD] 5 3 2 10 7 5 0.1 2 3 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 3 IT08706 No.8194-5/6 MCH5810 Note on usage : Since the MCH5810 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8194-6/6