STR750Fxx STR751Fxx STR752Fxx STR755Fxx ARM7TDMI-S™ 32-bit MCU with Flash, SMI, 3 std 16-bit timers, PWM timer, fast 10-bit ADC, I2C, UART, SSP, USB and CAN Features ■ Core – ARM7TDMI-S 32-bit RISC CPU – 54 DMIPS @ 60 MHz ■ Memories – Up to 256 KB Flash program memory (10k W/E cycles, retention 20 yrs @ 85°C) – 16 KB Read-While-Write Flash for data (100k W/E cycles, retention 20 yrs@ 85°C) – Flash Data Readout and Write Protection – 16KBytes embedded high speed SRAM – Memory mapped interface (SMI) to ext. Serial Flash (64 MB) w. boot capability ■ ■ ■ ■ Clock, reset and supply management – Single supply 3.3V ±10% or 5V ±10% – Embedded 1.8V Voltage Regulators – Int. RC for fast start-up and backup clock – Up to 60 MHz operation using internal PLL with 4 or 8 MHz crystal/ceramic osc. – Smart Low Power Modes: SLOW, WFI, STOP and STANDBY with backup registers – Real-time Clock, driven by low power internal RC or 32.768 kHz dedicated osc, for clock-calendar and Auto Wake-up Nested interrupt controller – Fast interrupt handling with 32 vectors – 16 IRQ priorities, 2 maskable FIQ sources – 16 external interrupt / wake-up lines DMA – 4-channel DMA controller – Circular buffer management – Support for UART, SSP, Timers, ADC LQFP64 10x10 mm LFBGA64 8 x 8 x 1.7 mm LFBGA100 10 x 10 x 1.7 mm – 16-bit 6-ch. synchronizable PWM timer – Dead time generation, edge/center-aligned waveforms and emergency stop – Ideal for induction/brushless DC motors ■ 8 Communications interfaces – 1 I2C interface – 3 HiSpeed UARTs w. Modem/LIN capability – 2 SSP interfaces (SPI or SSI) up to 16 Mb/s – 1 CAN interface (2.0B Active) – 1 USB full-speed 12 Mb/s interface with 8 configurable endpoint sizes ■ 10-bit A/D converter – 16/11 chan. with prog. Scan Mode & FIFO – Programmable Analog Watchdog feature – Conversion time: min. 3.75 µs – Start conversion can be triggered by timers ■ Up to 72/38 I/O ports – 72/38 GPIOs with High Sink capabilities – Atomic bit SET and RES operations Table 1. Reference 6 Timers – 16-bit watchdog timer (WDG) – 16-bit timer for system timebase functions – 3 synchronizable timers each with up to 2 input captures and 2 output compare/PWMs. October 2007 LQFP100 14 x 14 mm Device summary Root part number STR750Fxx STR750FV0, STR750FV1, STR750FV2 STR751Fxx STR751FR0, STR751FR1, STR751FR2 STR752Fxx STR752FR0, STR752FR1, STR752FR2 STR755Fxx Rev 4 STR755FR0, STR755FR1, STR755FR2 STR755FV0, STR755FV1, STR755FV2 1/84 www.st.com 1 Contents STR750Fxx STR751Fxx STR752Fxx STR755Fxx Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 3.1 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.0.1 4.1 5 Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1 5.2 5.3 2/84 Pin description table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.1.6 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 5.1.7 I/O characteristics versus the various power schemes (3.3V or 5.0V) . 29 5.1.8 Current consumption measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5.2.1 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5.2.2 Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 5.2.3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 35 5.3.3 Embedded voltage regulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.3.4 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 5.3.5 Clock and timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 5.3.6 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 5.3.7 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 6 Contents 5.3.8 I/O port pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 5.3.9 TB and TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 5.3.10 Communication interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . 62 5.3.11 USB characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 5.3.12 10-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 6.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 6.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 6.2.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 6.2.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . . . 80 7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 3/84 Description 1 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Description The STR750 family of 32-bit microcontrollers combines the industry-standard ARM7TDMI® 32-bit RISC core, featuring high performance, very low power, and very dense code, with a comprehensive set of peripherals and ST's latest 0.18µ embedded Flash technology. The STR750 family comprises a range of devices integrating a common set of peripherals as well as USB, CAN and some key innovations like clock failure detection and an advanced motor control timer. It supports both 3.3V and 5V, and it is also available in an extended temperature range (-40 to +105°C). This makes it a genuine general purpose microcontroller family, suitable for a wide range of applications: ● Appliances, brushless motor drives ● USB peripherals, UPS, alarm systems ● Programmable logic controllers, circuit breakers, inverters ● Medical and portable equipment 2 Device overview Table 2. Device overview Features STR755FR0 STR755FR1 STR755FR2 STR751FR0/ STR751FR1/ STR751FR2 STR752FR0/ STR752FR1/ STR752FR2 STR755FV0 STR755FV1/ STR755FV2 Flash - Bank 0 (bytes) 64K/128K/256K Flash - Bank 1 (bytes) 16K RWW STR750FV0/ STR750FV1/ STR750FV2 RAM (bytes) 16K Operating Temperature. Ambient temp.:-40 to +85°C / -40 to +105°C (see Table 49) Junction temp. -40 to + 125 °C (see Table 10) Common Peripherals USB/CAN peripherals Operating Voltage Packages (x) 4/84 3 UARTs, 2 SSPs, 1 I2C, 3 timers 1 PWM timer, 38 I/Os 13 Wake-up lines, 11 A/D Channels None USB 3.3V or 5V 3.3V CAN T=LQFP64 10x10, H=LFBGA64 3 UARTs, 2 SSPs, 1 I2C, 3 timers 1 PWM timer, 72 I/Os 15 Wake-up lines, 16 A/D Channels None USB+CAN 3.3V or 5V T=LQFP100 14x14, H=LFBGA100 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 3 Introduction Introduction This Datasheet contains the description of the STR750F family features, pinout, Electrical Characteristics, Mechanical Data and Ordering information. For complete information on the Microcontroller memory, registers and peripherals. Please refer to the STR750F Reference Manual. For information on the ARM7TDMI-S core please refer to the ARM7TDMI-S Technical Reference Manual available from Arm Ltd. For information on programming, erasing and protection of the internal Flash memory please refer to the STR7 Flash Programming Reference Manual For information on third-party development tools, please refer to the http://www.st.com/mcu website. 3.1 Functional description The STR750F family includes devices in 2 package sizes: 64-pin and 100-pin. Both types have the following common features: ARM7TDMI-STM core with embedded Flash & RAM STR750F family has an embedded ARM core and is therefore compatible with all ARM tools and software. It combines the high performance ARM7TDMI-STM CPU with an extensive range of peripheral functions and enhanced I/O capabilities. All devices have on-chip highspeed single voltage FLASH memory and high-speed RAM. Figure 1 shows the general block diagram of the device family. Embedded Flash memory Up to 256 KBytes of embedded Flash is available in Bank 0 for storing programs and data. An additional Bank 1 provides 16 Kbytes of RWW (Read While Write) memory allowing it to be erased/programmed on-the-fly. This partitioning feature is ideal for storing application parameters. ● When configured in burst mode, access to Flash memory is performed at CPU clock speed with 0 wait states for sequential accesses and 1 wait state for random access (maximum 60 MHz). ● When not configured in burst mode, access to Flash memory is performed at CPU clock speed with 0 wait states (maximum 32 MHz) Embedded SRAM 16 Kbytes of embedded SRAM accessed (read/write) at CPU clock speed with 0 wait states. Enhanced interrupt controller (EIC) In addition to the standard ARM interrupt controller, the STR750F embeds a nested interrupt controller able to handle up to 32 vectors and 16 priority levels. This additional hardware block provides flexible interrupt management features with minimal interrupt latency. 5/84 Introduction STR750Fxx STR751Fxx STR752Fxx STR755Fxx Serial memory interface (SMI) The Serial Memory interface is directly able to access up to 4 serial FLASH devices. It can be used to access data, execute code directly or boot the application from external memory. The memory is addressed as 4 banks of up to 16 Mbytes each. Clocks and start-up After RESET or when exiting from Low Power Mode, the CPU is clocked immediately by an internal RC oscillator (FREEOSC) at a frequency centered around 5 MHz, so the application code can start executing without delay. In parallel, the 4/8 MHz Oscillator is enabled and its stabilization time is monitored using a dedicated counter. An oscillator failure detection is implemented: when the clock disappears on the XT1 pin, the circuit automatically switches to the FREEOSC oscillator and an interrupt is generated. In Run mode, the AHB and APB clock speeds can be set at a large number of different frequencies thanks to the PLL and various prescalers: up to 60 MHz for AHB and up to 32 MHz for APB when fetching from Flash (64 MHz and 32 MHz when fetching from SRAM). In SLOW mode, the AHB clock can be significantly decreased to reduce power consumption. The built-in Clock Controller also provides the 48 MHz USB clock directly without any extra oscillators or PLL. For instance, starting from the 4 MHz crystal source, it is possible to obtain in parallel 60 MHz for the AHB clock, 48 MHz for the USB clock and 30 MHz for the APB peripherals. Boot modes At start-up, boot pins are used to select one of five boot options: ● Boot from internal flash ● Boot from external serial Flash memory ● Boot from internal boot loader ● Boot from internal SRAM Booting from SMI memory allows booting from a serial flash. This way, a specific boot monitor can be implemented. Alternatively, the STR750F can boot from the internal boot loader that implements a boot from UART. Power supply schemes You can connect the device in any of the following ways depending on your application. 6/84 ● Power Scheme 1: Single external 3.3V power source. In this configuration the VCORE supply required for the internal logic is generated internally by the main voltage regulator and the VBACKUP supply is generated internally by the low power voltage regulator. This scheme has the advantage of requiring only one 3.3V power source. ● Power Scheme 2: Dual external 3.3V and 1.8V power sources. In this configuration, the internal voltage regulators are switched off by forcing the VREG_DIS pin to high level. VCORE is provided externally through the V18 and V18REG power pins and VBACKUP through the V18_BKP pin. This scheme is intended to save power consumption for applications which already provide an 1.8V power supply. ● Power Scheme 3: Single external 5.0V power source. In this configuration the VCORE supply required for the internal logic is generated internally by the main voltage STR750Fxx STR751Fxx STR752Fxx STR755Fxx Introduction regulator and the VBACKUP supply is generated internally by the low power voltage regulator. This scheme has the advantage of requiring only one 5.0V power source. ● Caution: Power Scheme 4: Dual external 5.0V and 1.8V power sources. In this configuration, the internal voltage regulators are switched off, by forcing the VREG_DIS pin to high level. VCORE is provided externally through the V18 and V18REG power pins and VBACKUP through the V18_BKP pin. This scheme is intended to provide 5V I/O capability. When powered by 5.0V, the USB peripheral cannot operate. Low power modes The STR750F supports 5 low power modes, SLOW, PCG, WFI, STOP and STANDBY. Caution: ● SLOW MODE: the system clock speed is reduced. Alternatively, the PLL and the main oscillator can be stopped and the device is driven by a low power clock (fRTC). The clock is either an external 32.768 kHz oscillator or the internal low power RC oscillator. ● PCG MODE (Peripheral Clock Gating MODE): When the peripherals are not used, their APB clocks are gated to optimize the power consumption. ● WFI MODE (Wait For Interrupts): only the CPU clock is stopped, all peripherals continue to work and can wake-up the CPU when IRQs occur. ● STOP MODE: all clocks/peripherals are disabled. It is also possible to disable the oscillators and the Main Voltage Regulator (In this case the VCORE is entirely powered by V18_BKP). This mode is intended to achieve the lowest power consumption with SRAM and registers contents retained. The system can be woken up by any of the external interrupts / wake-up lines or by the RTC timer which can optionally be kept running. The RTC can be clocked either by the 32.768 kHz Crystal or the Low Power RC Oscillator. Alternatively, STOP mode gives flexibility to keep the either main oscillator, or the Flash or the Main Voltage Regulator enabled when a fast start after wake-up is preferred (at the cost of some extra power consumption). ● STANDBY MODE: This mode (only available in single supply power schemes) is intended to achieve the lowest power consumption even when the temperature is increasing. The digital power supply (VCORE) is completely removed (no leakage even at high ambient temperature). SRAM and all register contents are lost. Only the RTC remains powered by V18_BKP. The STR750F can be switched back from STANDBY to RUN mode by a trigger event on the WKP_STDBY pin or an alarm timeout on the RTC counter. It is important to bear in mind that it is forbidden to remove power from the VDD_IO power supply in any of the Low Power Modes (even in STANDBY MODE). DMA The flexible 4-channel general-purpose DMA is able to manage memory to memory, peripheral to memory and memory to peripheral transfers. The DMA controller supports circular buffer management avoiding the generation of interrupts when the controller reaches the end of the buffer. The DMA can be used with the main peripherals: UART0, SSP0, Motor control PWM timer (PWM), standard timer TIM0 and ADC. RTC (real-time clock) The real-time clock provides a set of continuously running counters which can be used with suitable software to provide a clock calendar function, and provides an alarm interrupt and a 7/84 Introduction STR750Fxx STR751Fxx STR752Fxx STR755Fxx periodic interrupt. It is clocked by an external 32.768 kHz oscillator or the internal low power RC oscillator. The RC has a typical frequency of 300 kHz and can be calibrated. WDG (watchdog timer) The watchdog timer is based on a 16-bit downcounter and 8-bit prescaler. It can be used as watchdog to reset the device when a problem occurs, or as free running timer for application time out management. Timebase timer (TB) The timebase timer is based on a 16-bit auto-reload counter and not connected to the I/O pins. It can be used for software triggering, or to implement the scheduler of a real-time operating system. Synchronizable standard timers (TIM2:0) The three standard timers are based on a 16-bit auto-reload counter and feature up to 2 input captures and 2 output compares (for external triggering or time base / time out management). They can work together with the PWM timer via the Timer Link feature for synchronization or event chaining. In reset state, timer Alternate Function I/Os are connected to the same I/O ports in both 64-pin and 100-pin devices. To optimize timer functions in 64-pin devices, timer Alternate Function I/Os can be connected, or “remapped”, to other I/O ports as summarized in Table 3 and detailed in Table 6. This remapping is done by the application via a control register. Table 3. Standard timer alternate function I/Os Number of alternate function I/Os Standard timer functions 64-pin package 100-pin package Default mapping Remapped Input Capture 2 1 2 Output Compare/PWM 2 1 2 Input Capture 2 1 1 Output Compare/PWM 2 1 1 Input Capture 2 2 2 Output Compare/PWM 2 1 2 TIM 0 TIM 1 TIM 2 Any of the standard timers can be used to generate PWM outputs. One timer (TIM0) is mapped to a DMA channel. Motor control PWM timer (PWM) The Motor Control PWM Timer (PWM) can be seen as a three-phase PWM multiplexed on 6 channels. The 16-bit PWM generator has full modulation capability (0...100%), edge or centre-aligned patterns and supports dead-time insertion. It has many features in common with the standard TIM timers which has the same architecture and it can work together with the TIM timers via the Timer Link feature for synchronization or event chaining.The PWM timer is mapped to a DMA channel. 8/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Introduction I²C bus The I²C bus interface can operate in multi-master and slave mode. It can support standard and fast modes (up to 400KHz). High speed universal asynch. receiver transmitter (UART) The three UART interfaces are able to communicate at speeds of up to 2 Mbit/s. They provide hardware management of the CTS and RTS signals and have LIN Master capability. To optimize the data transfer between the processor and the peripheral, two FIFOs (receive/transmit) of 16 bytes each have been implemented. One UART can be served by the DMA controller (UART0). Synchronous serial peripheral (SSP) The two SSPs are able to communicate up to 8 Mbit/s (SSP1) or up to 16 Mbit/s (SSP0) in standard full duplex 4-pin interface mode as a master device or up to 2.66 Mbit/s as a slave device. To optimize the data transfer between the processor and the peripheral, two FIFOs (receive/transmit) of 8 x 16 bit words have been implemented. The SSPs support the Motorola SPI or TI SSI protocols. One SSP can be served by the DMA controller (SSP0). Controller area network (CAN) The CAN is compliant with the specification 2.0 part B (active) with a bit rate up to 1Mbit/s. It can receive and transmit standard frames with 11-bit identifiers as well as extended frames with 29-bit identifiers. Up to 32 message objects are handled through an internal RAM buffer. In LQFP64 devices, CAN and USB cannot be connected simultaneously. Universal serial bus (USB) The STR750F embeds a USB device peripheral compatible with the USB Full speed 12Mbs. The USB interface implements a full speed (12 Mbit/s) function interface. It has software configurable endpoint setting and suspend/resume support. The dedicated 48 MHz clock source is generated from the internal main PLL. VDD must be in the range 3.3V±10% for USB operation. ADC (analog to digital converter) The 10-bit Analog to Digital Converter, converts up to 16 external channels (11 channels in 64-pin devices) in single-shot or scan modes. In scan mode, continuous conversion is performed on a selected group of analog inputs. The minimum conversion time is 3.75 µs (including the sampling time). The ADC can be served by the DMA controller. An analog watchdog feature allows you to very precisely monitor the converted voltage of up to four channels. An IRQ is generated when the converted voltage is outside the programmed thresholds. The events generated by TIM0, TIM2 and PWM timers can be internally connected to the ADC start trigger, injection trigger, and DMA trigger respectively, to allow the application to synchronize A/D conversion and timers. 9/84 Introduction STR750Fxx STR751Fxx STR752Fxx STR755Fxx GPIOs (general purpose input/output) Each of the 72 GPIO pins (38 GPIOs in 64-pin devices) can be configured by software as output (push-pull or open-drain), as input (with or without pull-up or pull-down) or as Peripheral Alternate Function. Port 1.15 is an exception, it can be used as general-purpose input only or wake-up from STANDBY mode (WKP_STDBY). Most of the GPIO pins are shared with digital or analog alternate functions. 10/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Block diagram STR750 block diagram BOOT1, BOOT0 as AF TEST NJTRST JTDI JTCK JTMS JTDO as AF ARM7TDMI-S CPU 60MHz AHB JTAG & ICE-RT GP DMA 4 streams AHB Arbiter SCLK, MOSI MISO as AF 4 CS as AF SERIAL MEMORY INTERFACE HRESETN PRESETN SRAM 16KB AHB LITE (up to 60MHz) Figure 1. BUS MATRIX 3.2 Introduction FLASH 256KB +16KB (RWW) NESTED INTERRUPT CTL RESET & POWER VDD_IO VCORE VBACKUP VDDA_PLL VDDA_ADC DC-DC 3.3V TO 1.8V MAIN LOW POWER 32xIRQ 2xFIQ HCLK OSC 32K CLOCK MANAGEMENT 15AF P0[31:0] P1[19:0] P2[19:0] 16AF VDDA_ADC VSSA_ADC PLL OSC 4M XT1 XT2 VDDA_PLL VSSA_PLL CK_USB EXT.IT WAKEUP RTC_XT1 RTC_XT2 FREE OSC PCLK APB BRIDGE VDD_IO V18 V18BKP VSS LP OSC CK_RTC CK_SYS NRSTIN NRSTOUT USB Full Speed GPIO PORT 0 USBDP USBDM CAN 2.0B RX,TX as AF GPIO PORT 2 FIFO 2x(16x8bit) UART0 RX,TX,CTS, RTS as AF 10-bit ADC FIFO 2x(16x8bit) UART1 RX,TX,CTS, RTS as AF WATCHDOG FIFO 2x(16x8bit) UART2 RX,TX,CTS, RTS as AF FIFO 2x(8x16bit) SSP0 MOSI,MISO, SCK,NSS as AF FIFO 2x(8x16bit) SSP1 MOSI,MISO, SCK,NSS as AF GPIO PORT 1 RTC TB TIMER 2xICAP, 2xOCMP as AF 2xICAP, 2xOCMP as AF TIM0 TIMER 2xICAP, 2xOCMP as AF TIM2 TIMER PWM1, PWM1N PWM2, PWM2N PWM3, PWM3N PWM_EMERGENCY as AF PWM TIMER TIM1 TIMER I2C SCL,SDA as AF APB (up to 32 MHz) AF: alternate function on I/O port pin Note: I/Os shown for 100 pin devices. 64-pin devices have the I/O set shown in Figure 3. 11/84 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 P0.03 / TIM2_TI1 / ADC_IN1 VDD_IO VSS_IO VSS18 V18 P1.00 / TIM0_OC2 P1.01 / TIM0_TI2 P1.13 / ADC_IN14 P1.14/ ADC_IN15 P1.04 / PWM3N / ADC_IN9 P1.05 / PWM3 P1.06 / PWM2N/ ADC_IN10 P1.07 / PWM2 P1.08 / PWM1N/ ADC_IN11 P2.05 / PWM3N P2.06 / PWM3 P2.07 / PWM2N P2.08 / PWM2 P2.09 / PWM1N P1.09 / PWM1 P1.10 / PWM_EMERGENCY P0.04 / SMI_CS0 / SSP0_NSS P0.05 / SSP0_SCLK / SMI_CK P0.06 / SMI_DIN / SSP0_MISO P0.07 / SMI_DOUT / SSP0_MOSI 4 Figure 2. ADC_IN13 / P1.12 ADC_IN0 / TIM2_OC1/ P0.02 MCO / TIM0_TI1 / P0.01 BOOT0 / TIM0_OC1 / P0.00 TIM1_TI2 / P0.31 TIM1_OC2 / P0.30 ADC_IN8 / TIM1_TI1 / P0.29 TIM1_OC1 / P0.28 TEST VSS_IO ADC_IN6 / UART1_RTS / P0.23 TIM2_OC1/ P2.04 UART1_RTS / P2.03 P2.02 ADC_IN5 / UART1_CTS / P0.22 UART1_TX / P0.21 UART1_RX / P0.20 JTMS / P1.19 JTCK / P1.18 JTDO / P1.17 JTDI / P1.16 NJTRST P2.01 P2.00 UART0_RTS / RTCK / P0.13 12/84 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 = 16 A/D input channels = 15 External interrupts / Wake-up Lines SMI_CS1 / ADC_IN2 / UART0_CTS / P0.12 SMI_CS2 / BOOT1 / UART0_TX / P0.11 SMI_CS3 / UART0_RX / P0.10 I2C_SDA / P0.09 I2C_SCL / P0.08 P2.19 P2.18 UART2_RTS / P2.17 ADC_IN12 / UART0_RTS P1.11 ADC_IN7 /UART2_RTS / P0.27 UART2_CTS / P0.26 UART2_TX / P0.25 UART2_RX / P0.24 ADC_IN4 / SSP1_NSS / USB_CK / P0.19 SSP1_MOSI / P0.18 ADC_IN3 / SSP1_MISO / P0.17 SSP1_SCLK / P0.16 P2.16 VDD_IO VDDA_PLL XT2 XT1 VSS_IO VSSA_PLL P2.15 Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx Pin description LQFP100 pinout LQFP100 V18BKP I/Os 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 VREG_DIS VSS_IO VSSA_ADC P2.10 P2.11 VDDA_ADC VDD_IO P1.02 / TIM2_OC2 P1.03 / TIM2_TI2 USB_DP USB_DN P0.14 / CAN_RX P0.15 / CAN_TX P2.12 P2.13 P1.15 / WKP_STDBY NRSTIN NRSTOUT XRTC2 XRTC1 V18BKP VSSBKP VSS18 V18REG P2.14 STR750Fxx STR751Fxx STR752Fxx STR755Fxx = 11 A/D input channels = 13 External interrupts / Wake-up Lines P1.09 / PWM1 P1.10 / PWM_EMERGENCY P0.04 / SMI_CS0 /SSP0_NSS P0.05 / SSP0_SCLK / SMI_CK P0.06 / SMI_DIN / SSP0_MISO P0.07 / SMI_DOUT / SSP0_MOSI 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 1 47 2 46 3 45 4 44 5 43 6 42 7 41 8 LQFP64 40 9 39 10 38 11 V18BKP I/Os 37 12 36 13 35 14 34 15 33 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 VREG_DIS VSS_IO_2 VSSA_ADC VDDA_ADC VDD_IO_2 P1.03 / TIM2_TI2 P0.14 / CAN_RX or USB_DP P0.15 / CAN_TX or USB_DN NRSTIN NRSTOUT XRTC2 XRTC1 V18BKP VSSBKP VSS18 V18REG SMI_CS1 / ADC_IN2 / UART0_CTS / UART2_RX /P0.12 SMI_CS2 / BOOT1 / UART0_TX / P0.11 SMI_CS3 / UART0_RX / P0.10 I2C_SDA/ P0.09 I2C_SCL / P0.08 ADC_IN12 / UART0_RTS / P1.11 ADC_IN4 / SSP1_NSS / USB_CK / P0.19 SSP1_MOSI / P0.18 ADC_IN3 / SSP1_MISO / P0.17 SSP1_SCLK / P0.16 VDD_IO_3 VDDA_PLL XT2 XT1 VSS_IO_3 VSSA_PLL ADC_IN13 / P1.12 ADC_IN0 / TIM2_OC1 / P0.02 MCO / TIM0_TI1 / P0.01 BOOT0 / TIM0_OC1 / P0.00 ADC_IN8 / TIM1_TI1 / P0.29 TIM1_OC1 / P0.28 TEST VSS_IO_4 UART1_TX / P0.21 UART1_RX / P0.20 JTMS / P1.19 JTCK / P1.18 JTDO / P1.17 JTDI / P1.16 NJTRST UART2_TX / UART0_RTS / RTCK / P0.13 P1.08 / PWM1N / ADC_IN11 LQFP64 pinout P0.03 / TIM2_TI1 / ADC_IN1 VDD_IO_1 VSS_IO_1 VSS18 V18 P1.04 / PWM3N / ADC_IN9 P1.05 / PWM3 P1.06 / PWM2N / ADC_IN10 P1.07 / PWM2 Figure 3. Pin description 13/84 Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx Table 4. LFBGA100 ball connections 1 3 4 5 6 7 8 9 10 A P0.03 P1.13 P1.14 P1.04 P1.06 P1.08 P0.05 P0.06 P0.07 P1.02 B P1.12 P0.02 P0.01 P1.05 P1.07 P1.09 P0.04 P2.13 P1.03 P2.10 C P0.31 P0.00 VDD_IO V18 P1.10 P2.09 VSS_IO VSSA_ADC P2.11 USB_DP D P0.29 P0.30 VSS_IO VSS18 P1.01 P1.15 VDD_IO VDDA_ADC P2.12 USB_DN E P0.28 P0.23 P0.22 VSS_IO TEST P1.00 NRSTOUT VREG_DIS NRSTIN P0.14 F P2.03 P0.21 P0.20 P2.02 P2.04 P2.05 P2.06 VSS18 VSSBKP P0.15 NJTRST P1.18 P1.19 P2.01 P2.00 P2.07 2.08 V18REG V18BKP XRTC2 G H P0.13 P1.16 P1.17 P2.19 P2.18 P2.17 P0.24 P2.14 P2.16 XRTC1 J P0.11 P0.12 P1.11 P0.27 P0.19 P0.26 P0.25 P2.15 VDD_IO VSS_IO K P0.10 P0.09 P0.08 P0.18 P0.17 P0.16 XT1 XT2 Table 5. 14/84 2 VDDA_PLL VSSA_PLL LFBGA64 ball connections 1 2 3 4 5 6 7 8 A P0.03 VSS_IO P1.04 P1.06 P1.08 P0.05 P0.06 P0.07 B P1.12 VDD_IO P1.05 P1.07 P1.09 P0.04 P1.10 P1.03 C P0.01 P0.02 P0.00 V18 VSS18 VDD_IO VSS_IO P0.14 D P0.29 P0.28 TEST VSS_IO VREG_DIS VDDA_ADC VSSA_ADC E P1.18 P1.19 P0.20 P0.21 NRSTOUT NRSTIN V18BKP XRTC2 F P0.13 NJTRST P1.16 P1.17 V18REG VSS18 VSSBKP XRTC1 G P0.11 P0.12 P1.11 P0.19 VDD_IO VSS_IO H P0.10 P0.09 P0.08 P0.17 P0.18 P0.16 P0.15 VDDA_PLL VSSA_PLL XT2 XT1 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 4.0.1 Pin description Pin description table Legend / abbreviations for Table 6: Type: I = input, O = output, S = supply, Input levels: All Inputs are LVTTL at VDD_IO = 3.3V+/-0.3V or TTL at VDD_IO = 5V± 0.5V. In both cases, TT means VILmax =0.8V VIHmin=2.0V Inputs: All inputs can be configured as floating or with internal weak pull-up or pull down (pu/pd) Outputs: All Outputs can be configured as Open Drain (OD) or Push-Pull (PP) (see also note 6 below Table 6). There are 3 different types of Output with different drives and speed characteristics: – O8: fmax = 40 MHz on CL=50pF and 8 mA static drive capability for VOL=0.4V and up to 20 mA for VOL=1.3V (seeOutput driving current on page 55) – O4: fmax = 20 MHz on CL=50pF and 4 mA static drive capability for VOL=0.4V (seeOutput driving current on page 55) – O2: fmax = 10 MHz on CL=50pF and 2 mA static drive capability of for VOL=0.4V (seeOutput driving current on page 55) External interrupts/wake-up lines: EITx 15/84 Pin description STR750Fxx STR751Fxx STR752Fxx STR755Fxx Port reset state The reset state of the I/O ports is GPIO input floating. Exceptions are P1[19:16] and P0.13 which are configured as JTAG alternate functions: ● The JTAG inputs (JTDI, JTMS and JTDI) are configured as input floating and are ready to accept JTAG sequences. ● The JTAG output JTDO is configured as floating when idle (no JTAG operation) and is configured in output push-pull only when serial JTAG data must be output. ● The JTAG output RTCK is always configured as output push-pull. It outputs '0' level during the reset phase and then outputs the JTCK input signal resynchronized 3 times by the internal AHB clock. ● The GPIO_PCx registers do not control JTAG AF selection, so the reset values of GPIO_PCx for P1[19:16] and P0. 13 are the same as other ports. Refer to the GPIO section of the STR750 Reference Manual for the register description and reset values. ● P0.11 and P0.00 are sampled by the boot logic after reset, prior to fetching the first word of user code at address 0000 0000h. ● When booting from SMI (and only in this case), the reset state of the following GPIOs is "SMI alternate function output enabled": – P0.07 (SMI_DOUT) – P0.05 (SMI_CLK) – P0.04 (SMI_CS0) – P0.06 (SMI_DIN) Note that the other SMI pins: SMI_CS1,2,3 (P0.12, P0.11, P0.10) are not affected. To avoid excess power consumption, unused I/O ports must be tied to ground. STR750F pin description Ext. int /Wake-up Capability X X Port 1.12 ADC: Analog input 13 I/O TT X X EIT0 O8 X X Port 0.02 TIM2: Output Compare 1(4) I/O TT X X O8 X X Port 0.01 TIM0: Input Main Clock Capture / trigger Output / external clock 1 I/O TT X X O8 X X Port 0.00 / Boot mode selection input 0 TIM0: Output Compare 1 P0.31 / TIM1_TI2 I/O TT X X O2 X X Port 0.31 TIM1: Input Capture / trigger / external clock 2 P0.30 / TIM1_OC2 I/O TT X X O2 X X Port 0.30 TIM1: Output Compare 2 1 B1 2 B2 2 P0.02 / C2 TIM2_OC1 / ADC_IN0 3 B3 3 C1 4 C2 4 P0.00 / C3 TIM0_OC1 / BOOT0 5 C1 6 D2 P1.12 / ADC_IN13 P0.01 / TIM0_TI1 / MCO Input Level O8 B1 Pin name Type EIT12 LFBGA64(2) X LQFP64(2) X LFBGA100(1) TT LQFP100(1) I/O 1 16/84 Output pu/pd Input floating Pin n° Usable in Standby Table 6. OD (3) PP Main function (after reset) Alternate function ADC: Analog input 0 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Input Output floating pu/pd 5 D1 P0.29 / TIM1_TI1 / ADC_IN8 I/O TT X X O2 X X Port 0.29 TIM1: Input Capture 1 8 E1 6 D2 P0.28 / TIM1_OC1 I/O TT X X O2 X X Port 0.28 TIM1: Output Compare 1 9 E5 7 D3 TEST I Reserved, must be tied to ground 10 E4 8 D4 VSS_IO S Ground Voltage for digital I/Os Capability LFBGA64(2) D1 Input Level LQFP64(2) 7 Pin name Type LFBGA100(1) Main function (after reset) LQFP100(1) Pin n° Usable in Standby STR750F pin description (continued) Ext. int /Wake-up Table 6. Pin description OD (3) PP Alternate function I/O TT X X O2 X X Port 0.23 UART1: Ready To Send output(4) ADC: Analog input 8 11 E2 P0.23 / UART1_RTS / ADC_IN6 12 F5 P2.04 / TIM2_OC1 I/O TT X X O2 X X Port 2.04 TIM2: Output Compare 1(4) 13 F1 P2.03 / UART1_RTS I/O TT X X O2 X X Port 2.03 UART1: Ready To Send output(4) 14 F4 P2.02 I/O TT X X O2 X X Port 2.02 15 E3 P0.22 / UART1_CTS / ADC_IN5 I/O TT X X O2 X X Port 0.22 UART1: Clear To Send input 16 F2 9 E4 P0.21 / UART1_TX I/O TT X X O2 X X Port 0.21 UART1: Transmit data output (remappable to P0.15)(4) 17 F3 10 E3 P0.20 / UART1_RX I/O TT X X O2 X X Port 0.20 UART1: Receive data input (remappable to P0.14)(4) 18 G3 11 E2 P1.19 / JTMS I/O TT X X O2 X X JTAG mode selection input(6) Port 1.19 19 G2 12 E1 P1.18 / JTCK I/O TT X X O2 X X JTAG clock input(6) Port 1.18 20 H3 13 F4 P1.17 / JTDO I/O TT X X O8 X X JTAG data output(6) Port 1.17 21 H2 14 F3 P1.16 / JTDI I/O TT X X O2 X X JTAG data input(6) Port 1.16 22 G1 15 F2 NJTRST I TT 23 G4 P2.01 I/O TT X X O2 X X Port 2.01 24 G5 P2.00 I/O TT X X O2 X X Port 2.00 X JTAG return clock output(6) ADC analog input 6 ADC: Analog input 5 JTAG reset input(5) Port 0.13 25 H1 16 P0.13 / RTCK / F1 UART0_RTS UART2_TX I/O TT X X O8 X UART2: Transmit UART0: Ready To Send output(4) Data output (when remapped)(8) 17/84 Pin description 26 J2 P0.12 / UART2_RX / 17 G2 UART0_CTS / ADC_IN2 / SMI_CS1 I/O TT X X Capability Output Ext. int /Wake-up pu/pd Input Level Pin name Type Input LFBGA64(2) LQFP64(2) LFBGA100(1) LQFP100(1) Pin n° O4 OD (3) X PP X Usable in Standby STR750F pin description (continued) floating Table 6. STR750Fxx STR751Fxx STR752Fxx STR755Fxx Main function (after reset) Port 0.12 Alternate function UART0: Clear To Send input ADC: Analog input 2 Serial Memory Interface: chip select output 1 UART2: Receive Data input (when remapped)(8) O4 X X Port 0.11/Boot mode selection input 1 O2 X X Port 0.10 UART0: Receive Data input O4 X X Port 0.09 I2C: Serial Data O4 X X Port 0.08 I2C: Serial clock X O2 X X Port 2.19 X X O2 X X Port 2.18 TT X X O2 X X Port 2.17 UART2: Ready To Send output(4) I/O TT X X O8 X X Port 1.11 UART0: Ready To Send output(4) ADC: Analog input 12 P0.27 / UART2_RTS / ADC_IN7 I/O TT X X O2 X X Port 0.27 UART2: Ready To Send output(8) ADC: Analog input 7 J6 P0.26 / UART2_CTS I/O TT X X O2 X X Port 0.26 UART2: Clear To Send input 37 J7 P0.25 / UART2_TX I/O TT X X O2 X X Port 0.25 UART2: Transmit data output (remappable to P0.13)(8) 38 H7 P0.24 / UART2_RX I/O TT X X O2 X X Port 0.24 UART2: Receive data input (remappable to P0.12)(8) 27 J1 P0.11 / UART0_TX / 18 G1 BOOT1 / SMI_CS2 28 K1 P0.10 / 19 H1 UART0_RX / SMI_CS3 I/O TT X X 29 K2 20 H2 P0.09 / I2C_SDA I/O TT X X 30 K3 21 H3 P0.08 / I2C_SCL I/O TT X X 31 H4 P2.19 I/O TT X 32 H5 P2.18 I/O TT 33 H6 P2.17 / UART2_RTS I/O 34 J3 P1.11 22 G3 /UART0_RTS ADC_IN12 35 J4 36 39 J5 P0.19 / USB_CK / 23 G4 SSP1_NSS / ADC_IN4 P0.18 / SSP1_MOSI 40 K4 24 H5 41 K5 P0.17 / 25 H4 SSP1_MISO / ADC_IN3 42 K6 26 H6 18/84 P0.16 / SSP1_SCLK I/O TT X X I/O TT X X EIT4 EIT3 EIT11 EIT6 O2 X X Port 0.19 UART0: Transmit data output Serial Memory Interface: chip select output 2 Serial Memory Interface: chip select output 3 SSP1: Slave select input (remappable to P0.11)(8) ADC: Analog input 4 USB: 48 MHz Clock input I/O TT X X O2 X X Port 0.18 SSP1: Master out/slave in data (remappable to P0.10)(8) I/O TT X X O2 X X Port 0.17 SSP1: Master in/slave out data (remappable to P0.09)(8) I/O TT X X O2 X X Port 0.16 SSP1: serial clock (remappable to P0.08)(8) ADC: Analog input 3 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Input Output Supply voltage for digital I/Os 45 K9 28 G7 VDDA_PLL S Supply voltage for PLL 46 K8 29 H7 XT2 47 K7 30 H8 XT1 48 J10 31 G6 VSS_IO S Ground voltage for digital I/Os 49 K10 32 G8 VSSA_PLL S Ground voltage for PLL X X Capability S TT pu/pd 27 G5 VDD_IO I/O floating J9 P2.16 Input Level 44 Pin name Type H9 LFBGA64(2) 43 LQFP64(2) LFBGA100(1) Main function (after reset) LQFP100(1) Pin n° Usable in Standby STR750F pin description (continued) Ext. int /Wake-up Table 6. Pin description O2 OD (3) PP X X Alternate function Port 2.16 4 MHz main oscillator 50 J8 P2.15 I/O TT X X O2 X X Port 2.15 51 H8 P2.14 I/O TT X X O2 X X Port 2.14 52 G8 33 F5 V18REG Stabilization for main voltage regulator. Requires external capacitors of at least 10µF between V18REG and VSS18. See Figure 4. S To be connected to the 1.8V external power supply when embedded regulators are not used, 53 F8 34 F6 VSS18 S Ground Voltage for the main voltage regulator 54 F9 35 F7 VSSBKP S Stabilization for low power voltage regulator. S Ground Voltage for the low power voltage regulator. Requires external capacitors of at least 1µF between V18BKP and VSSBKP. See Figure 4. To be connected to the 1.8V external power supply when embedded regulators are not used, 55 G9 36 E7 V18BKP 56 H10 37 F8 XRTC1 X 57 G10 38 E8 XRTC2 X 32 kHz oscillator for Realtime Clock 58 E7 39 E5 NRSTOUT O 59 E9 40 E6 NRSTIN I TT 60 D6 I TT X P1.15 / WKP_STDBY EIT15 X Reset output X Reset input X Port 1.15 Wake-up from STANDBY input pin 61 B8 P2.13 I/O TT X X O2 X X Port 2.13 62 D9 P2.12 I/O TT X X O2 X X Port 2.12 63 F10 P0.15 / CAN_TX I/O TT X X O2 X X Port 0.15 CAN: Transmit data output 64 E10 P0.14 / CAN_RX I/O TT X X O2 X X Port 0.14 CAN: Receive data input 65 D10 USB_DN I/O USB: bidirectional data (data -) 66 C10 USB_DP I/O USB: bidirectional data (data +) 67 B9 41 D8 (7) (7) 42 C8 (7) (7) 41 D8 (7) (7) 42 C8 (7) (7) 43 B8 P1.03 / TIM2_TI2 I/O TT X X EIT5 O2 X X Port 1.03 TIM2: Input Capture / trigger / external clock 2 (remappable to P0.07)(8) 19/84 Pin description Input Output Supply Voltage for digital I/Os 70 D8 45 D6 VDDA_ADC S Supply Voltage for A/D converter X X Capability S TT pu/pd 44 C6 VDD_IO I/O floating D7 P1.02 / TIM2_OC2 Input Level 69 Pin name Type A10 LFBGA64(2) 68 LQFP64(2) LFBGA100(1) Main function (after reset) LQFP100(1) Pin n° Usable in Standby STR750F pin description (continued) Ext. int /Wake-up Table 6. STR750Fxx STR751Fxx STR752Fxx STR755Fxx O2 OD (3) PP X X Port 1.02 Alternate function TIM2: Output compare 2 (remappable to P0.06)(8) 71 C9 P2.11 I/O TT X X O2 X X Port 2.11 72 B10 P2.10 I/O TT X X O2 X X Port 2.10 73 C8 46 D7 VSSA_ADC S Ground Voltage for A/D converter 74 C7 47 C7 VSS_IO S Ground Voltage for digital I/Os 75 E8 48 D5 VREG_DIS I TT I/O TT X X I/O TT X X I/O TT X X I/O TT X X Voltage Regulator Disable input 76 A9 49 P0.07 / A8 SMI_DOUT / SSP0_MOSI 77 A8 50 A7 78 A7 51 P0.05 / A6 SSP0_SCLK / SMI_CK 79 B7 52 B6 80 C5 53 P1.10 B7 PWM_EMERGE NCY I/O TT X X 81 B6 54 B5 P1.09 / PWM1 I/O TT X X 82 C6 P2.09 / PWM1N I/O TT X 83 G7 P2.08 / PWM2 I/O TT 84 G6 P2.07 / PWM2N I/O 85 F7 P2.06 / PWM3 86 F6 87 A6 55 A5 88 B5 56 B4 P1.07 / PWM2 89 A5 57 A4 90 B4 58 B3 P1.05 / PWM3 20/84 O4 X X Port 0.07 Serial Memory Interface: data output SSP0: Master out Slave in data O4 X X Port 0.06 Serial Memory Interface: data input SSP0: Master in Slave out data O4 X X Port 0.05 SSP0: Serial clock Serial Memory Interface: Serial clock output O4 X X Port 0.04 Serial Memory Interface: chip select output 0 SSP0: Slave select input EIT10 O2 X X Port 1.10 PWM: Emergency input EIT9 O4 X X Port 1.09 PWM: PWM1 output X O2 X X Port 2.09 PWM: PWM1 complementary output(4) X X O2 X X Port 2.08 PWM: PWM2 output(4) TT X X O2 X X Port 2.07 PWM: PWM2 complementary output(4) I/O TT X X O2 X X Port 2.06 PWM: PWM3 output(4) P2.05 / PWM3N I/O TT X X O2 X X Port 2.05 PWM: PWM3 complementary output(4) P1.08 / PWM1N / ADC_IN11 I/O TT X X O4 X X Port 1.08 PWM: PWM1 complementary output(8) I/O TT X X O4 X X Port 1.07 PWM: PWM2 output(4) I/O TT X X O4 X X Port 1.06 PWM: PWM2 complementary output(4) I/O TT X X O4 X X Port 1.05 PWM: PWM3 output(4) P0.06 / SMI_DIN / SSP0_MISO P0.04 / SMI_CS0 / SSP0_NSS P1.06 / PWM2N / ADC_IN10 EIT2 EIT1 EIT8 EIT7 ADC: analog input 11 ADC: analog input 10 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 92 Capability A3 Main function (after reset) pu/pd 59 Output floating LFBGA64(2) A4 Input Level LQFP64(2) 91 Type LFBGA100(1) Input LQFP100(1) Pin n° Usable in Standby STR750F pin description (continued) Ext. int /Wake-up Table 6. Pin description P1.04 / PWM3N / ADC_IN9 I/O TT X X O4 X X Port 1.04 PWM: PWM3 complementary output(4) A3 P1.14 / ADC_IN15 I/O TT X X O8 X X Port 1.14 ADC: analog input 15 93 A2 P1.13 / ADC_IN14 I/O TT X X O8 X X Port 1.13 ADC: analog input 14 94 D5 P1.01 / TIM0_TI2 I/O TT X X O2 X X Port 1.01 TIM0: Input Capture / trigger / external clock 2 (remappable to P0.05)(8) 95 E6 P1.00 / TIM0_OC2 I/O TT X X O2 X X Port 1.00 TIM0: Output compare 2 (remappable to P0.04)(8) Pin name EIT13 OD (3) PP Alternate function ADC: analog input 9 96 C4 60 C4 V18 S Stabilization for main voltage regulator. Requires external capacitors 33nF between V18 and VSS18. See Figure 4. To be connected to the 1.8V external power supply when embedded regulators are not used. 97 D4 61 C5 VSS18 S Ground Voltage for the main voltage regulator. 98 D3 62 A2 VSS_IO S Ground Voltage for digital I/Os 99 C3 63 B2 VDD_IO S Supply Voltage for digital I/Os 100 A1 64 A1 P0.03 / TIM2_TI1 / ADC_IN1 I/O TT X X O2 X X Port 0.03 TIM2: Input Capture / trigger / external clock 1 ADC: analog input 1 1. For STR755FVx part numbers, the USB pins must be left unconnected. 2. The non available pins on LQPFP64 and LFBGA64 packages are internally tied to low level. 3. None of the I/Os are True Open Drain: when configured as Open Drain, there is always a protection diode between the I/O pin and VDD_IO. 4. In the 100-pin package, this Alternate Function is duplicated on two ports. You can configure one port to use this AF, the other port is then free for general purpose I/O (GPIO), external interrupt/wake-up lines, or analog input (ADC_IN) where these functions are listed in the table. 5. It is mandatory that the NJTRST pin is reset to ground during the power-up phase. It is recommended to connect this pin to NRSTOUT pin (if available) or NRSTIN. 6. After reset, these pins are enabled as JTAG alternate function see (Port reset state on page 16). To use these ports as general purpose I/O (GPIO), the DBGOFF control bit in the GPIO_REMAP0R register must be set by software (in this case, debugging these I/Os via JTAG is not possible). 7. There are two different TQFP and BGA 64-pin packages: in the first one, pins 41 and 42 are mapped to USB DN/DP while for the second one, they are mapped to P0.15/CAN_TX and P0.14/CAN_RX. 8. For details on remapping these alternate functions, refer to the GPIO_REMAP0R register description. 21/84 Pin description Figure 4. STR750Fxx STR751Fxx STR752Fxx STR755Fxx Required external capacitors when regulators are used 33 nF 33 nF 96 VSS18 V18 97 V18BKP 55 VSSBKP 54 LQFP100 VSS18 1µF V18BKP 36 VSSBKP 35 1µF LQFP64 53 V18REG 52 61 60 VSS18 V18 VSS18 10 µF 34 V18REG 33 10 µF VDD_IO 27 VDD_IO 44 1 µF 1 µF 33 nF 33 nF D4 C4 VSS18 V18 VSSBKP F9 LFBGA100 1µF V18BKP E7 VSSBKP F7 1µF LFBGA64 VSS18 VSS18 F8 V18REG G8 VDD_IO J9 1 µF 22/84 C5 C4 VSS18 V18 V18BKP G9 10 µF F6 V18REG F5 VDD_IO G5 1 µF 10 µF STR750Fxx STR751Fxx STR752Fxx STR755Fxx 4.1 Pin description Memory map Figure 5. Memory map Addressable Memory Space 4 Gbytes 0xFFFF FFFF 0xFFFF 8000 APB TO ARM7 BRIDGE Peripheral Memory Space 32 Kbytes 0xFFFF FFFF 32K 0xFFFF FC00 0xFFFF FBFF 0xFFFF F800 0xFFFF F7FF 7 Reserved 1K EIC 1K EXTIT 1K RTC 1K DMA 1K Reserved 1K GPIO I/O Ports 1K Reserved 1K UART2 1K UART1 1K UART0 1K Reserved 1K 0xFFFF F400 0xFFFF F3FF FLASH Memory Space 128/256 Kbytes 0xE000 0000 0xDFFF FFFF 0xFFFF F000 0xFFFF EFFF 0xFFFF EC00 0xFFFF EBFF 6 0x2010 DFFF 0x2010 C000 SystemMemory 8K 0x2010 0017 0x2010 0000 Flash registers 24B 0xFFFF E800 0xFFFF E7FF 0xFFFF E400 0xFFFF E3FF 0xFFFF E000 0xFFFF DFFF 0xC000 0000 0xBFFF FFFF 0xFFFF DC00 0xFFFF DBFF 0xFFFF D800 0xFFFF D7FF 5 0x200C 0x200C 0x200C 0x200C 0x200C 0xA000 0000 0x9FFF FFFF 4 0x9000 0013 0x9000 0000 0x83FF FFFF 0x8000 0000 0x7FFF FFFF SMI Registers 4000 3FFF 2000 1FFF 0000 0xFFFF D400 0xFFFF D3FF B1F1 8K B1F0 8K 0xFFFF D000 0xFFFF CFFF 0xFFFF CC00 0xFFFF CBFF 0xFFFF C800 0xFFFF C7FF 20B 0xFFFF C400 0xFFFF C3FF SMI Ext. Memory 4 x 16M 0xFFFF C000 0xFFFF BFFF 0xFFFF BC00 0xFFFF BBFF 0xFFFF B800 0xFFFF B7FF 3 0x6000 0047 0x6000 0000 0x5FFF FFFF 0xFFFF B400 0xFFFF B3FF CONF + MRCC 1K 0x2003 FFFF 0xFFFF B000 0xFFFF AFFF B0F7(2) 2 0x4000 3FFF 0x4000 0000 0x3FFF FFFF 64K 0xFFFF A800 0xFFFF A7FF 0x2003 0000 0x2002 FFFF Internal SRAM B0F6(2) 16K 64K 0x2002 0000 0x2001 FFFF 1 0x2010 0017 0x2000 0000 0x1FFF FFFF 0xFFFF 0xFFFF 0xFFFF 0xFFFF 0xFFFF B0F5 128K/256K+16K+32B 64K 0x2001 0000 0x2000 FFFF 0 Boot Memory(1) 128K/256K 0x2000 0x2000 0x2000 0x2000 0x2000 0x2000 0x2000 0x2000 0x2000 8000 7FFF 6000 5FFF 4000 3FFF 2000 1FFF 0000 1K CAN 1K Reserved 1K SSP1 1K SSP0 1K Reserved 1K WDG 1K Reserved 1K USB Registers 1K Reserved 1K A400 A3FF A200 USB RAM 256 x16-bit A000 9FFF 0xFFFF 9000 0xFFFF 8FFF 32K 1K PWM 1K TIM2 1K TIM1 1K TIM0 1K TB Timer 1K ADC 1K Reserved 1K 0xFFFF 8C00 0xFFFF 8BFF B0F1 8K 8K 8K 0xFFFF 8400 0xFFFF 83FF B0F0 8K 0xFFFF 8000 B0F3 B0F2 0xFFFF 8800 0xFFFF 87FF 1K Reserved 0xFFFF 9800 0xFFFF 97FF 0xFFFF 9400 0xFFFF 93FF Internal Flash 1K 0xFFFF 9C00 0xFFFF 9BFF B0F4 0x0000 0000 0xFFFF AC00 0xFFFF ABFF I2C Reserved (1) In internal Flash Boot Mode, internal FLASH is aliased at 0x0000 0000h (2) Only available in STR750Fx2 Reserved 23/84 Electrical parameters 5 Electrical parameters 5.1 Parameter conditions STR750Fxx STR751Fxx STR752Fxx STR755Fxx Unless otherwise specified, all voltages are referred to VSS. 5.1.1 Minimum and maximum values Unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of ambient temperature, supply voltage and frequencies by tests in production on 100% of the devices with an ambient temperature at TAmax (given by the selected temperature range). Data based on product characterisation, design simulation and/or technology characteristics are indicated in the table footnotes and are not tested in production. Based on characterization, the minimum and maximum values refer to sample tests and represent the mean value plus or minus three times the standard deviation (mean±3Σ). 5.1.2 Typical values Unless otherwise specified, typical data are based on TA=25° C, VDD_IO=3.3 V (for the 3.0 V≤VDD_IO≤3.6 V voltage range) and V18=1.8 V. They are given only as design guidelines and are not tested. Typical ADC accuracy values are determined by characterization of a batch of samples from a standard diffusion lot over the full temperature range, where 95% of the devices have an error less than or equal to the value indicated (mean±2Σ). 5.1.3 Typical curves Unless otherwise specified, all typical curves are given only as design guidelines and are not tested. 24/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 5.1.4 Electrical parameters Loading capacitor The loading conditions used for pin parameter measurement are shown in Figure 6. Figure 6. Pin loading conditions STR7 PIN CL=50pF 5.1.5 Pin input voltage The input voltage measurement on a pin of the device is described in Figure 7. Figure 7. Pin input voltage STR7 PIN VIN 25/84 Electrical parameters 5.1.6 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Power supply schemes When mentioned, some electrical parameters can refer to a dedicated power scheme among the four possibilities. The four different power schemes are described below. Power supply scheme 1: Single external 3.3 V power source Figure 8. Power supply scheme 1 IN STANDBY MODE THIS BLOCK IS KEPT POWERED ON V18_BKP 1µF VSS_BKP NORMAL MODE VREG_DIS LOW POWER V LPVREG ~1.4V VOLTAGE REGULATOR V18 33nF BACKUP CIRCUITRY OSC32K, RTC WAKEUP LOGIC, BACKUP REGISTERS) POWER SWITCH VSS18 V18REG 10µF VBACKUP V18 VSS18 VDD_IO 3.3V 1µF MAIN VMVREG = 1.8V VOLTAGE REGULATOR +/-0.3V VSS_IO VIO=3.3V OUT I/O LOGIC GP I/Os IN VDD_PLL 3.3V PLL VSS_PLL VDD_ADC VSS_ADC ADCIN 26/84 3.3V ADC VCORE KERNEL LOGIC (CPU & DIGITAL & MEMORIES) STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Power supply scheme 2: Dual external 1.8V and 3.3V supply Figure 9. Power supply scheme 2 V18_BKP VSS_BKP VDD_IO VBACKUP OFF LOW POWER VOLTAGE REGULATOR VREG_DIS V18 VLPVREG BACKUP CIRCUITRY (OSC32K, RTC WAKEUP LOGIC, BACKUP REGISTERS) V18REG POWER SWITCH 1.8V VSS18 OFF VDD_IO MAIN VOLTAGE REGULATOR 3.3V +/-0.3V VCORE VMVREG VSS_IO KERNEL (CORE & DIGITAL & MEMORIES) VIO=3.3V OUT GP I/Os I/O LOGIC IN VDD_PLL 3.3V VSS_PLL VDD_ADC VSS_ADC PLL 3.3V ADC ADCIN NOTE : THE EXTERNAL 3.3 V POWER SUPPLY MUST ALWAYS BE KEPT ON 27/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Power supply scheme 3: Single external 5 V power source Figure 10. Power supply scheme 3 IN STANDBY MODE THIS BLOCK IS KEPT POWERED ON V18_BKP 1µF VSS_BKP NORMAL MODE VREG_DIS LOW POWER V LPVREG ~1.4V VOLTAGE REGULATOR V18 33nF BACKUP CIRCUITRY OSC32K, RTC WAKEUP LOGIC, BACKUP REGISTERS) POWER SWITCH VSS18 V18REG 10µF VBACKUP V18 VSS18 VDD_IO 5.0V 1µF MAIN VMVREG = 1.8V VOLTAGE REGULATOR +/-0.5V VSS_IO VIO=5.0V OUT I/O LOGIC GP I/Os IN VDD_PLL 5.0V PLL VSS_PLL VDD_ADC VSS_ADC ADCIN 28/84 5.0V ADC VCORE KERNEL LOGIC (CPU & DIGITAL & MEMORIES) STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Power supply scheme 4: Dual external 1.8 V and 5.0 V supply Figure 11. Power supply scheme 4 V18_BKP VSS_BKP VDD_IO VBACKUP OFF LOW POWER VOLTAGE REGULATOR VREG_DIS V18 VLPVREG BACKUP CIRCUITRY (OSC32K, RTC WAKEUP LOGIC, BACKUP REGISTERS) V18REG POWER SWITCH 1.8V VSS18 OFF VDD_IO MAIN VOLTAGE REGULATOR 5.0V +/-0.5V VCORE VMVREG VSS_IO KERNEL (CORE & DIGITAL & MEMORIES) VIO=5.0V OUT GP I/Os I/O LOGIC IN VDD_PLL 5.0V PLL VSS_PLL VDD_ADC VSS_ADC 5.0V ADC ADCIN NOTE : THE EXTERNAL 5.0V POWER SUPPLY MUST ALWAYS BE KEPT ON 5.1.7 I/O characteristics versus the various power schemes (3.3V or 5.0V) Unless otherwise mentioned, all the I/O characteristics are valid for both ● VDD_IO=3.0 V to 3.6 V with bit EN33=1 ● VDD_IO=4.5 V to 5.5 V with bit EN33=0 When VDD_IO=3.0 V to 3.6 V, I/Os are not 5V tolerant. 5.1.8 Current consumption measurements All the current consumption measurements mentioned below refer to Power scheme 1 and 2 as described in Figure 12 and Figure 13 29/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Figure 12. Power consumption measurements in power scheme 1 (regulators enabled) VDDA_ADC pins VDDA_PLL pins IDDA_PLL IDDA_ADC ADC load PLL load VDD_IO pins IDD ballast regulator I33 transistor 3.3V Supply 3.3V internal load V18 pins (including V18BKP) I18 1.8V internal load IDD is measured, which corresponds to the total current consumption : IDD = IDDA_PLL + IDDA_ADC + I33 + I18 Figure 13. Power consumption measurements in power scheme 2 (regulators disabled) VDDA_ADC pins VDDA_PLL pins IDDA_PLL IDD_v33 3.3V Supply 30/84 PLL load I33 3.3V internal load I18 1.8V internal load IDD_v18 IDD_v33 and IDD_v18 are measured which correspond to: IDD_v33 = IDDA_PLL + IDDA_ADC + I33 IDD_v18 = I18 ADC load VDD_IO pins V18 pins (including V18BKP) 1.8V Supply IDDA_ADC STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Figure 14. Power consumption measurements in power scheme 3 (regulators enabled) VDDA_ADC pins VDDA_PLL pins IDDA_PLL IDDA_ADC ADC load PLL load VDD_IO pins IDD ballast regulator I50 transistor 5.0V Supply 5.0V internal load V18 pins (including V18BKP) I18 1.8V internal load IDD is measured, which corresponds to the total current consumption : IDD = IDDA_PLL + IDDA_ADC + I50 + I18 Figure 15. Power consumption measurements in power scheme 4 (regulators disabled) VDDA_ADC pins VDDA_PLL pins IDDA_PLL IDD_v50 5.0V Supply PLL load I50 5.0V internal load I18 1.8V internal load IDD_v18 IDD_v50 and IDD_v18 are measured which correspond to: IDD_v50= IDDA_PLL + IDDA_ADC + I50 IDD_v18 = I18 ADC load VDD_IO pins V18 pins (including V18BKP) 1.8V Supply IDDA_ADC 31/84 Electrical parameters 5.2 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Absolute maximum ratings Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 5.2.1 Voltage characteristics Table 7. Voltage characteristics Symbol Ratings VDD_x - VSS_X(1) Including VDDA_ADC and VDDA_PLL V18 - VSS18 VIN Digital 1.8 V Supply voltage on all V18 power pins (when 1.8 V is provided externally) Input voltage on any pin (2) Min Max Unit -0.3 6.5 V -0.3 2.0 VSS-0.3 to VDD_IO+0.3 VSS-0.3 to VDD_IO+0.3 |∆VDDx| Variations between different 3.3 V or 5.0 V power pins 50 |∆V18x| Variations between different 1.8 V power pins(3) 25 Variations between all the different ground pins 50 |VSSX - VSS| VESD(HBM) Electro-static discharge voltage (Human Body Model) VESD(MM) Electro-static discharge voltage (Machine Model) see : Absolute maximum ratings (electrical sensitivity) on page 52 mV see : Absolute maximum ratings (electrical sensitivity) on page 52 1. All 3.3 V or 5.0 V power (VDD_IO, VDDA_ADC, VDDA_PLL) and ground (VSS_IO, VSSA_ADC, VDDA_ADC) pins must always be connected to the external 3.3V or 5.0V supply. When powered by 3.3V, I/Os are not 5V tolerant. 2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads, there is no positive injection current, and the corresponding VIN maximum must always be respected 3. Only when using external 1.8 V power supply. All the power (V18, V18REG, V18BKP) and ground (VSS18, VSSBKP) pins must always be connected to the external 1.8 V supply. 32/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 5.2.2 Electrical parameters Current characteristics Table 8. Current characteristics Symbol Maximum value Ratings IVDD_IO(1) IVSS_IO(1) IIO Total current into VDD_IO power lines (source) (2) Total current out of VSS ground lines (sink) Unit 150 (2) 150 Output current sunk by any I/O and control pin 25 Output current source by any I/Os and control pin - 25 Injected current on NRSTIN pin ±5 Injected current on XT1 and XT2 pins ±5 mA IINJ(PIN) (3) & (4) Injected current on any other ΣIINJ(PIN)(3) pin (5) Total injected current (sum of all I/O and control ±5 pins) (5) ± 25 1. The user can use GPIOs to source or sink high current (up to 20 mA for O8 type High Sink I/Os). In this case, the user must ensure that these absolute max. values are not exceeded (taking into account the RUN power consumption) and must follow the rules described in Section 5.3.8: I/O port pin characteristics on page 54. 2. All 3.3 V or 5.0 V power (VDD_IO, VDDA_ADC, VDDA_PLL) and ground (VSS_IO, VSSA_ADC, VDDA_ADC) pins must always be connected to the external 3.3V or 5.0V supply. 3. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. 4. Negative injection disturbs the analog performance of the device. See note in Section 5.3.12: 10-bit ADC characteristics on page 72. 5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). These results are based on characterization with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device. 5.2.3 Thermal characteristics Table 9. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range -65 to +150 °C TJ Maximum junction temperature 150 °C 33/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx 5.3 Operating conditions 5.3.1 General operating conditions Subject to general operating conditions for VDD_IO, and TA unless otherwise specified. Table 10. Symbol fHCLK General operating conditions Parameter Internal AHB Clock frequency Conditions Min Max Accessing SRAM with 0 wait states 0 64 Accessing Flash in burst mode, TA≤85° C 0 60 Accessing Flash in burst mode TA>85° C 56 Accessing Flash with 0 wait states 0 32 Accessing Flash in RWW mode 0 16 0 32 Standard Operating Voltage Power Scheme 1 & 2 3.0 3.6 Standard Operating Voltage Power Scheme 3 & 4 4.5 5.5 V18 Standard Operating Voltage Power Scheme 2 & 4 1.65 1.95 PD Power dissipation at TA= 85° C for suffix 6 or TA= 105° C for suffix 7(1) fPCLK VDD_IO TA TJ Internal APB Clock frequency LQFP100 434 LQFP64 444 LFBGA100 487 LFBGA64 344 Unit MHz MHz V mW Ambient temperature for 6 suffix Maximum power dissipation version Low power dissipation(2) -40 85 °C -40 105 °C Ambient temperature for 7 suffix Maximum power dissipation version Low power dissipation (2) -40 105 °C -40 125 °C 6 Suffix Version -40 105 °C 7 Suffix Version -40 125 °C Junction temperature range 1. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 6.2: Thermal characteristics on page 79). 2. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 6.2: Thermal characteristics on page 79). 34/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 5.3.2 Electrical parameters Operating conditions at power-up / power-down Subject to general operating conditions for TA. Table 11. Operating conditions at power-up / power-down Symbol Parameter Conditions Min(1) Typ Max(1) µs/V 20 tVDD_IO VDD_IO rise time rate tV18 V18 rise time rate (1) 20 When 1.8 V power is supplied externally Unit ms/V µs/V 20 20 ms/V 1. Data guaranteed by characterization, not tested in production. 5.3.3 Embedded voltage regulators Subject to general operating conditions for VDD_IO, and TA Table 12. Embedded voltage regulators Symbol Parameter Conditions Min Typ Max Unit VMVREG MVREG power supply(1) load <150 mA 1.65 1.80 1.95 V VLPVREG LPVREG power supply(2) load <10 mA 1.30 1.40 1.50 V tVREG_PWRUP(1) Voltage Regulators start-up time (to reach 90% of final V18 value) at VDD_IO power-up(3) VDD_IO rise slope = 20 µs/V 80 µs VDD_IO rise slope = 20 ms/V 35 ms 1. VMVREG is observed on the V18, V18REG and V18BKP pins except in the following case: - In STOP mode with MVREG OFF (LP_PARAM13 bit). See note 2. - In STANDBY mode. See note 2. 2. In STANDBY mode, VLPVREG is observed on the V18BKP pin In STOP mode, VLPVREG is observed on the V18, V18REG and V18BKP pins. 3. Once VDD_IO has reached 3.0 V, the RSM (Regulator Startup Monitor) generates an internal RESET during this start-up time. 35/84 Electrical parameters 5.3.4 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Supply current characteristics The current consumption is measured as described in Figure 12 on page 30 and Figure 13 on page 30. Subject to general operating conditions for VDD_IO, and TA Maximum power consumption For the measurements in Table 13 and Table 14, the MCU is placed under the following conditions: ● All I/O pins are configured in output push-pull 0 ● All peripherals are disabled except if explicitly mentioned. ● Embedded Regulators are used to provide 1.8 V (except if explicitly mentioned). Table 13. Symbol IDD Maximum power consumption in RUN and WFI modes Parameter Conditions (1) Typ(2) Max (3) Unit External Clock with PLL multiplication, code running from RAM, all peripherals enabled in the 3.3V Supply current in MRCC_PLCKEN register: fHCLK=60 and 5V RUN mode MHz, fPCLK=30 MHz range Single supply scheme see Figure 12 / Figure 14 80 90 mA External Clock, code running from RAM: fHCLK=60 MHz, fPCLK=30 MHz 3.3V Supply current in Single supply scheme see and 5V WFI mode Figure 12./ Figure 14 range Parameter setting BURST=1, WFI_FLASHEN=1 62 67 mA 1. The conditions for these consumption measurements are described at the beginning of Section 5.3.4. 2. Typical data are based on TA=25°C, VDD_IO=3.3V or 5.0V and V18=1.8V unless otherwise specified. 3. Data based on product characterisation, tested in production at VDD_IO max and V18 max (1.95V in dual supply mode or regulator output value in single supply mode) and TA max. 36/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Table 14. Electrical parameters Maximum power consumption in STOP and STANDBY modes Max(3) Symbol Conditions (1) Parameter Supply current in STOP mode IDD Supply current in STANDBY mode Typ(2) TA 25°C TA 85°C TA 105°C Unit LP_PARAM bits: ALL OFF(4) Single supply scheme see Figure 12. 3.3V range 12 16 117 250 µA LP_PARAM bits: ALL OFF Dual supply scheme see Figure 13. IDD_V18 IDD_V33 5 <1 8 3 60 20 110 26 µA LP_PARAM bits: ALL OFF(4) Single supply scheme see Figure 10 5V range 15 22 160 310 µA LP_PARAM bits: ALL OFF Dual supply scheme see Figure 11 IDD_V18 IDD_V50 5 3 8 6 60 50 110 65 3.3 V range 10 20 25 28 5V range 15 25 30 33 µA RTC OFF 1. The conditions for these consumption measurements are described at the beginning of Section 5.3.4. 2. Typical data are based on TA=25°C, VDD_IO=3.3V or 5.0V and V18=1.8V unless otherwise specified. 3. Data based on product characterisation, tested in production at VDD_IO max and V18 max (1.95V in dual supply mode or regulator output value in single supply mode). 4. In this mode, the whole digital circuitry is powered internally by the LPVREG at approximately 1.4V, which significantly reduces the leakage currents. 37/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Figure 16. Power consumption in STOP mode Figure 17. Power consumption in STOP mode in Single supply scheme (3.3 V Single supply scheme (5 V range) range) 350 300 300 TYP (3.3V) MAX (3.6V) 200 IStop (uA) IStop (uA) 250 150 100 250 TYP (5.0V) 200 MAX (5.5V) 150 100 50 50 0 0 -40 25 45 55 75 95 105 -40 25 Temp (°C) 75 95 35 TYP (3.3V) 30 MAX (3.6V) 25 IStandby (uA) 25 20 15 10 5 TYP (5.0V) MAX (5.5V) 20 15 10 5 0 0 -40 25 Temp (°C) 105 Figure 19. Power consumption in STANDBY mode (5 V range) 30 IStandby (uA) 55 Temp (°C) Figure 18. Power consumption in STANDBY mode (3.3 V range) 38/84 45 105 -40 25 Temp (°C) 105 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Typical power consumption The following measurement conditions apply to Table 15, Table 16 and Table 17. In RUN mode: ● Program is executed from Flash (except if especially mentioned). The program consists of an infinite loop. When fHCLK > 32 MHz, burst mode is activated. ● A standard 4 MHz crystal source is used. ● In all cases the PLL is used to multiply the frequency. ● All measurements are done in the single supply scheme with internal regulators used (see Figure 12) In WFI Mode: ● In WFI Mode the measurement conditions are similar to RUN mode (OSC4M and PLL enabled). In addition, the Flash can be disabled depending on burst mode activation: – For AHB frequencies greater than 32 MHz, burst mode is activated and the Flash is kept enabled by setting the WFI_FLASH_EN bit (this bit cannot be reset when burst mode is activated). – For AHB frequencies less than or equal to 32 MHz, burst mode is deactivated, WFI_FLASH_EN is reset and the LP_PARAM14 bit is set (Flash is disabled in WFI mode). In SLOW mode: ● The same program as in RUN mode is executed from Flash. The CPU is clocked by the FREEOSC, OSC4M, LPOSC or OSC32K. Only EXTIT peripheral is enabled in the MRCC_PCLKEN register. In SLOW-WFI mode: ● In SLOW-WFI, the measurement conditions are similar to SLOW mode (CPU clocked by a low frequency clock). In addition, the LP_PARAM14 bit is set (FLASH is OFF). The WFI routine itself is executed from SRAM (it is not allowed to execute a WFI from the internal FLASH) In STOP mode: ● Several measurements are given: in the single supply scheme with internal regulators used (see Figure 12): and in the dual supply scheme (see Figure 13). In STANDBY mode: ● ● Three measurements are given: – The RTC is disabled, only the consumption of the LPVREG and RSM remain (almost no leakage currents) – The RTC is running, clocked by a standard 32.768 kHz crystal. – The RTC is running, clocked by the internal Low Power RC oscillator (LPOSC) STANDBY mode is only supported in the single supply scheme (see Figure 12) 39/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Subject to general operating conditions for VDD_IO, and TA Table 15. Symbol Single supply typical power consumption in Run, WFI, Slow and Slow-WFI modes Para meter Conditions Clocked by OSC4M with PLL multiplication, all peripherals enabled in the MRCC_PLCKEN register: fHCLK=60 MHz, fPCLK=30 MHz fHCLK=56 MHz, fPCLK=28 MHz fHCLK=48 MHz, fPCLK=24 MHz fHCLK=32 MHz, fPCLK=32 MHz fHCLK=16 MHz, fPCLK=16 MHz Supply current in fHCLK=8 MHz, fPCLK=8 MHz RUN mode(4) Clocked by OSC4M with PLL multiplication, only EXTIT IDD (3) 3.3V 5V typ(1) typ(2) 80 75 65 59 34 20 82 77 67 61 37 22 65 60 54 42 22 16 67 62 55 44 24 18 62 59 53 22 13 10 63 60 54 23 15 11 Clocked by FREEOSC: fHCLK=fPCLK=~5 MHz, Supply current in Clocked by OSC4M: fHCLK=fPCLK=4 MHz Clocked by LPOSC: fHCLK=fPCLK=~300 kHz SLOW mode(4) Clocked by OSC32K: fHCLK=fPCLK=32.768 kHz 9 8 3.65 3.5 10 9 3.9 4.2 mA Clocked by FREEOSC: fHCLK=fPCLK=~5 MHz Supply current in Clocked by OSC4M: fHCLK=fPCLK=4 MHz SLOW-WFI Clocked by LPOSC: fHCLK=fPCLK=~300 kHz (4)(7) mode Clocked by OSC32K: fHCLK=fPCLK=32.768 kHz 3.5 3.1 1.15 0.98 4.0 3.75 1.65 1.5 mA peripheral enabled in the MRCC_PLCKEN register: fHCLK=60 MHz, fPCLK=30 MHz fHCLK=56 MHz, fPCLK=28 MHz fHCLK=48 MHz, fPCLK=24 MHz fHCLK=32 MHz, fPCLK=32 MHz fHCLK=16 MHz, fPCLK=16 MHz fHCLK=8 MHz, fPCLK=8 MHz Clocked by OSC4M with PLL multiplication, only EXTIT peripheral enabled in the MRCC_PLCKEN register: fHCLK=60 MHz, fPCLK=30 MHz(5) Supply current in fHCLK=56 MHz, fPCLK=28 MHz(5) fHCLK=48 MHz, fPCLK=24 MHz(5) WFI mode(4) fHCLK=32 MHz, fPCLK=32 MHz(6) fHCLK=16 MHz, fPCLK= 16 MHz (6) fHCLK= 8 MHz, fPCLK= 8 MHz(6) 1. Typical data based on TA=25° C and VDD_IO=3.3V. 2. Typical data based on TA=25° C and VDD_IO=5.0V. 3. The conditions for these consumption measurements are described at the beginning of Section 5.3.4 on page 36. 4. Single supply scheme see Figure 14. 5. Parameter setting BURST=1, WFI_FLASHEN=1 6. Parameter setting BURST=0, WFI_FLASHEN=0 7. Parameter setting WFI_FLASHEN=0, OSC4MOFF=1 40/84 Unit mA mA mA STR750Fxx STR751Fxx STR752Fxx STR755Fxx Table 16. Electrical parameters Dual supply supply typical power consumption in Run, WFI, Slow and Slow-WFI modes To calculate the power consumption in Dual supply mode, refer to the values given in Table 15. and consider that this consumption is split as follows: IDD(single supply)~IDD(dual supply)= IDD_V18 + IDD(VDD_IO) For 3.3V range: IDD(VDD_IO) ~ 1 to 2 mA For 5V range: IDD(VDD_IO) ~ 2 to 3 mA Therefore most of the consumption is sunk on the V18 power supply This formula does not apply in STOP and STANDBY modes, refer to Table 17. Subject to general operating conditions for VDD_IO, and TA Table 17. Symbol Typical power consumption in STOP and STANDBY modes 3.3V Typ(1) 5V Typ(2) LP_PARAM bits: ALL OFF(5) 12 15 LP_PARAM bits : MVREG ON, OSC4M OFF, FLASH OFF(6) 130 135 LP_PARAM bits: MVREG ON, OSC4M ON , FLASH OFF(6) 1950 1930 630 635 2435 2425 Parameter Supply current in STOP mode(4) Conditions LP_PARAM bits: MVREG ON, OSC4M OFF, FLASH ON (6) LP_PARAM bits: MVREG ON, OSC4M ON, FLASH ON IDD(3) Supply current in STOP mode(7) Supply current in STANDBY mode(4) (6) LPPARAM bits: ALL OFF, with V18=1.8 V IDD_V18 IDD_V33 5 <1 5 <1 LP_PARAM bits: OSC4M ON, FLASH OFF IDD_V18 IDD_V33 410 1475 410 1435 LP_PARAM bits: OSC4M OFF, FLASH ON IDD_V18 IDD_V33 550 <1 550 1 LP_PARAM bits: OSC4M ON, FLASH ON IDD_V18 IDD_V33 910 1475 910 1445 RTC OFF 11 14 RTC ON clocked by OSC32K 14 18 Unit µA µA µA 1. Typical data are based on TA=25°C, VDD_IO=3.3 V and V18=1.8 V unless otherwise indicated in the table. 2. Typical data are based on TA=25°C, VDD_IO=5.0 V and V18=1.8 V unless otherwise indicated in the table. 3. The conditions for these consumption measurements are described at the beginning of Section 5.3.4 on page 36. 4. Single supply scheme see Figure 12. 5. In this mode, the whole digital circuitry is powered internally by the LPVREG at approximately 1.4 V, which significantly reduces the leakage currents. 6. In this mode, the whole digital circuitry is powered internally by the MVREG at 1.8 V. 7. Dual supply scheme see Figure 13. 41/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Supply and clock manager power consumption Table 18. Supply and clock manager power consumption Conditions(1) 3.3V Typ 5V Typ External components specified in: 4/8 MHz crystal / ceramic resonator oscillator (XT1/XT2) on page 46 1815 1795 FLASH static current consumption in STOP or WFI mode (LP_PARAM bit FLASH ON) 515 515 Main Voltage Regulator static current IDD(MVREG) consumption in STOP mode (LP_PARAM bit: MVREG ON) 130 135 STOP mode includes leakage where V18 is internally set to 1.4 V 12 15 STANDBY mode where V18BKP and V18 are internally set to 1.4 V and 0 V respectively 11 14 Symbol Parameter Supply current of resonator oscillator IDD(OSC4M) in STOP or WFI mode (LP_PARAM bit: OSC4M ON) IDD(FLASH) Low Power Voltage Regulator + RSM IDD(LPVREG) current static current consumption 1. Measurements performed in 3.3V single supply mode see Figure 12 42/84 Unit µA STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters On-Chip peripheral power consumption Conditions: – VDD_IO=VDDA_ADC=VDDA_PLL=3.3 V or 5 V ±10% unless otherwise specified. – TA= 25° C – Clocked by OSC4M with PLL multiplication, fCK_SYS=64 MHz, fHCLK=32 MHz, fPCLK=32 MHz . Table 19. On-Chip peripherals Symbol IDD(TIM) Parameter TIM Timer supply current (1) PWM Timer supply current(2) IDD(SSP) SSP supply current (3) IDD(UART) UART supply current (4) IDD(PWM) Typ (3.3V and 5.0V) Unit 0.7 1 1.3 1.6 IDD(I2C) I2C supply current (5) 0.3 IDD(ADC) ADC supply current when converting (6) 1.2 mA (7) IDD(USB) USB supply current Note: VDD_IO must be 3.3 V ±10% 0.90 IDD(CAN) CAN supply current (8) 2.8 1. Data based on a differential IDD measurement between reset configuration and timer counter running at 32 MHz. No IC/OC programmed (no I/O pads toggling) 2. Data based on a differential IDD measurement between reset configuration and PWM running at 32 MHz. This measurement does not include PWM pads toggling consumption. 3. Data based on a differential IDD measurement between reset configuration and permanent SPI master communication at maximum speed 16 MHz. The data sent is 55h. This measurement does not include the pad toggling consumption. 4. Data based on a differential IDD measurement between reset configuration and a permanent UART data transmit sequence at 1Mbauds. This measurement does not include the pad toggling consumption. 5. Data based on a differential IDD measurement between reset configuration (I2C disabled) and a permanent I2C master communication at 100kHz (data sent equal to 55h). This measurement includes the pad toggling consumption but not the external 10kOhm external pull-up on clock and data lines. 6. Data based on a differential IDD measurement between reset configuration and continuous A/D conversions at 8 MHz in scan mode on 16 inputs configured as AIN. 7. Data based on a differential IDD measurement between reset configuration and a running generic HID application. 8. Data based on a differential IDD measurement between reset configuration (CAN disabled) and a permanent CAN data transmit sequence in loopback mode at 1MHz. This measurement does not include the pad toggling consumption. 43/84 Electrical parameters 5.3.5 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Clock and timing characteristics XT1 external clock source Subject to general operating conditions for VDD_IO, and TA. Table 20. Symbol fXT1 XT1 external clock source Parameter Conditions(1) (2) Min External clock source frequency VXT1H XT1 input pin high level voltage VXT1L XT1 input pin low level voltage tw(XT1H) tw(XT1L) XT1 high or low time (3) Typ Max Unit 4 60 MHz VDD_IO 0.7xVDD_IO V tr(XT1) tf(XT1) see Figure 20 VSS 0.3xVDD_IO 6 ns XT1 rise or fall time (3) IL XTx Input leakage current CIN(XT1) XT1 input capacitance(3) DuCy(XT1) Duty cycle 20 VSS ≤ VIN ≤ VDD_IO ±1 5 45 pF 55 1. Data based on typical application software. 2. Time measured between interrupt event and interrupt vector fetch. ∆tc(INST) is the number of tCPU cycles needed to finish the current instruction execution. 3. Data based on design simulation and/or technology characteristics, not tested in production. 44/84 µA % STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters XRTC1 external clock source Subject to general operating conditions for VDD_IO, and TA. Table 21. XRTC1 external clock source Symbol Conditions(1) Parameter fXRTC1 External clock source frequency VXRTC1H XRTC1 input pin high level voltage VXRTC1L XRTC1 input pin low level voltage Min Typ Max Unit 32.768 500 kHz VDD_IO 0.7xVDD_IO V see Figure 20 tw(XRTC1H) XRTC1 high or low tw(XRTC1L) time(2) tr(XRTC1) tf(XRTC1) IL CIN(RTC1) XRTC1 rise or fall VSS 0.3xVDD_IO 900 ns time(2) XRTCx Input leakage current 50 VSS≤VIN≤VDD_I ±1 O XRTC1 input capacitance(2) 5 DuCy(RTC1) Duty cycle 30 µA pF 70 % 1. Data based on typical application software. 2. Data based on design simulation and/or technology characteristics, not tested in production. Figure 20. Typical application with an external clock source 90% VXT1H 10% VXT1L tr(XT1) TXT1 tf(XT1) tw(XT1H) tw(XT1L) XT2 EXTERNAL CLOCK SOURCE fOSC4M hi-Z XT1 IL STR750 45/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx 4/8 MHz crystal / ceramic resonator oscillator (XT1/XT2) The STR750 system clock or the input of the PLL can be supplied by a OSC4M which is a 4 MHz clock generated from a 4 MHz or 8 MHz crystal or ceramic resonator. If using an 8 MHz oscillator, software set the XTDIV bit to enable a divider by 2 and generate a 4 MHz OSC4M clock. All the information given in this paragraph are based on product characterisation with specified typical external components. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and start-up stabilization time. Refer to the crystal/ceramic resonator manufacturer for more details (frequency, package, accuracy...). Table 22. Symbol 4/8 MHz crystal / ceramic resonator oscillator (XT1/XT2)(1) Parameter Conditions Min 4 MHz Crystal/Resonator Oscillator connected on XT1/XT2 XTDIV=0 or 8 MHz Crystal/Resonator Oscillator connected on XT1/XT2 XTDIV=1 fOSC4M Oscillator frequency RF Feedback resistor CL1(2) CL2 Recommended load capacitance versus equivalent RS=200Ω serial resistance of the crystal or (3) ceramic resonator (RS) i2 XT2 driving current Typ Max 4 200 VDD_IO=3.3 V or 5.0 V tSU(OSC4M)(4) Startup time at VDD_IO power-up Unit MHz 240 270 kΩ 60 pF 425 µA 1 ms 1. Resonator characteristics given by the crystal/ceramic resonator manufacturer. 2. For CL1 and CL2 it is recommended to use high-quality ceramic capacitors in the 5-pF to 25-pF range (typ.) designed for high-frequency applications and selected to match the requirements of the crystal or resonator. CL1 and CL2, are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2. PCB and MCU pin capacitance must be included when sizing CL1 and CL2 (10 pF can be used as a rough estimate of the combined pin and board capacitance). 3. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a humid environment, due to the induced leakage and the bias condition change. However, it is recommended to take this point into account if the MCU is used in tough humidity conditions. 4. tSU(OSC4M) is the typical start-up time measured from the moment VDD_IO is powered (with a quick VDD_IO ramp-up from 0 to 3.3V (<50µs) to a stabilized 4MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal/ceramic resonator manufacturer. Figure 21. Typical application with a 4 or 8 MHz crystal or ceramic resonator XTDIV WHEN RESONATOR WITH INTEGRATED CAPACITORS CL1 XT1 LINEAR AMPLIFIER RESONATOR RF CL2 fOSC4M /2 VDD/2 Ref FEEDBACK LOOP i2 XT2 STR75X 46/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters OSC32K crystal / ceramic resonator oscillator The STR7 RTC clock can be supplied with a 32.768 kHz Crystal/Ceramic resonator oscillator. All the information given in this paragraph are based on product characterisation with specified typical external components. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and start-up stabilization time. Refer to the crystal/ceramic resonator manufacturer for more details (frequency, package, accuracy...). Table 23. OSC32K crystal / ceramic resonator oscillator Symbol Parameter Conditions fOSC32K Oscillator Frequency RF Feedback resistor CL1 CL2 Recommended load capacitance RS=40KΩ versus equivalent serial resistance of the crystal or ceramic resonator (RS)(1) i2 XT2 driving current Min Typ Max Unit 32.768 VDD_IO=3.3 V or 5.0 V VDD_IO=3.3 V or 5.0 V VIN=VSS tSU(OSC32K)(2) Startup time 270 kHz 310 370 kΩ 12.5 15 pF 5 µA 1 VDD_IO is stabilized 2.5 s 1. The oscillator selection can be optimized in terms of supply current using an high quality resonator with small RS value. Refer to crystal/ceramic resonator manufacturer for more details 2. tSU(OSC32K) is the start-up time measured from the moment it is enabled (by software) to a stabilized 32 kHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal/ceramic resonator manufacturer Figure 22. Typical application with a 32.768 kHz crystal or ceramic resonator WHEN RESONATOR WITH INTEGRATED CAPACITORS i2 CL1 CL2 fOSC32K XRTC1 32 kHz RESONATOR FEEDBACK LOOP RF XRTC2 STR750 PLL characteristics PLL Jitter Terminology ● Self-referred single period jitter (period jitter) Period Jitter is defined as the difference of the maximum period (Tmax) and minimum period (Tmin) at the output of the PLL where Tmax is the maximum time difference between 2 consecutive clock rising edges and Tmin is the minimum time difference between 2 consecutive clock rising edges. See Figure 23 ● Self-referred long term jitter (N period jitter) Self-referred long term Jitter is defined as the difference of the maximum period (Tmax) and minimum period (Tmin) at the output of the PLL where Tmax is the maximum time 47/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx difference between N+1 consecutive clock rising edges and Tmin is the minimum time difference between N+1 consecutive clock rising edges. N should be kept sufficiently large to have a long term jitter (ex: thousands). For N=1, this becomes the single period jitter. See Figure 23 ● Cycle-to-cycle jitter (N period jitter) This corresponds to the time variation between adjacent cycles over a random sample of adjacent clock cycles pairs. Jitter(cycle-to-cycle) = Max(Tcycle n- Tcycle n-1) for n=1 to N. See Figure 24 Figure 23. Self-referred jitter (single and long term) n --- n+1 n+N IDEAL CK_PLL T ACTUAL CK_PLL single period jitter trigger point long term jitter Figure 24. Cycle-to-cycle jitter n n+1 n+2 --- n+N IDEAL CK_PLL T ACTUAL CK_PLL Tcycle 1 48/84 Tcycle 2 Tcycle N-1 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters PLL characteristics Subject to general operating conditions for VDD_IO, and TA. Table 24. PLL characteristics Value Symbol Parameter Test Conditions Min PLL input clock fPLL_IN Max(1) 4.0 PLL input clock duty cycle 40 PLL multiplier output clock fPLL_INx 24 fVCO VCO frequency range When PLL operates (locked) tLOCK PLL lock time fPLL_OUT Typ 336 Unit MHz 60 % 165 MHz 960 MHz 300 µs ∆tJITTER1(2)(3) Single period jitter (+/-3Σ peak to peak) fPLL_IN = 4 MHz(4) VDD_IO is stable +/-250 ps ∆tJITTER2(2)(3) Long term jitter (+/-3Σ peak to peak) fPLL_IN = 4 MHz(4) VDD_IO is stable +/-2.5 ns ∆tJITTER3(2)(3) Cycle to cycle jitter (+/-3Σ peak fPLL_IN = 4 MHz(4) VDD_IO is stable to peak) +/-500 ps 1. Data based on product characterisation, not tested in production. 2. Refer to jitter terminology in : PLL characteristics on page 47 for details on how jitter is specified. 3. The jitter specification holds true only up to 50mV (peak-to-peak) noise on VDDA_PLL and V18 supplies. Jitter will increase if the noise is more than 50mV. In addition, it assumes that the input clock has no jitter. 4. The PLL parameters (MX1, MX0, PRESC1, PRESC2) must respect the constraints described in: PLL characteristics on page 47. Internal RC oscillators (FREEOSC & LPOSC) Subject to general operating conditions for VDD_IO, and TA. Table 25. Internal RC oscillators (FREEOSC & LPOSC) Symbol Parameter fCK_FREEOSC FREEOSC Oscillator Frequency fCK_LPOSC LPOSC Oscillator Frequency Conditions Min Typ Max Unit 3 5 8 MHz 150 300 500 kHz 49/84 Electrical parameters 5.3.6 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Memory characteristics Flash memory Subject to general operating conditions for VDD_IO and V18, TA = -40 to 105 °C unless otherwise specified. Table 26. Flash memory characteristics Value Symbol Parameter Test Conditions Typ Max(1) Unit tPW Word Program 35 µs tPDW Double Word Program 60 µs tPB0 Bank 0 Program (256K) Single Word programming of a checker-board pattern 2 4.9(2) s tPB1 Bank 1 Program (16K) Single Word programming of a checker-board pattern 125 224(2) ms tES Sector Erase (64K) Not preprogrammed (all 1) Preprogrammed (all 0) 1.54 1.176 2.94(2) 2.38(2) s tES Sector Erase (8K) Not preprogrammed (all 1) Preprogrammed (all 0) 392 343 560(2) 532(2) ms tES Bank 0 Erase (256K) Not preprogrammed (all 1) Preprogrammed (all 0) 8.0 6.6 13.7 11.2 s tES Bank 1 Erase (16K) Not preprogrammed (all 1) Preprogrammed (all 0) 0.9 0.8 1.5 1.3 s tRPD Recovery when disabled 20 µs tPSL Program Suspend Latency 10 µs tESL Erase Suspend Latency 300 µs 1. Data based on characterisation not tested in production 2. 10K program/erase cycles. Table 27. Flash memory endurance and data retention Value Symbol Parameter Conditions Unit Typ Max NEND_B0 Endurance (Bank 0 sectors) 10 kcycles NEND_B1 Endurance (Bank 1 sectors) 100 kcycles YRET Data Retention TA=85° C 20 Years tESR Erase Suspend Rate Min time from Erase Resume to next Erase Suspend 20 ms 1. Data based on characterisation not tested in production. 50/84 Min(1) STR750Fxx STR751Fxx STR752Fxx STR755Fxx 5.3.7 Electrical parameters EMC characteristics Susceptibility tests are performed on a sample basis during product characterization. Functional EMS (electro magnetic susceptibility) Based on a simple running application on the product (toggling 2 LEDs through I/O ports), the product is stressed by two electro magnetic events until a failure occurs (indicated by the LEDs). ● ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard. ● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 1000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in the table below based on the EMS levels and classes defined in application note AN1709. Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations: The software flowchart must include the management of runaway conditions such as: ● Corrupted program counter ● Unexpected reset ● Critical Data corruption (control registers...) Prequalification trials: Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behaviour is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Table 28. Symbol EMC characteristics Parameter Conditions Level/ Class VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD_IO=3.3 V or 5 V, TA=+25° C, fCK_SYS=32 MHz conforms to IEC 1000-4-2 Class A VEFTB Fast transient voltage burst limits to be applied VDD_IO=3.3 V or 5 V, through 100pF on VDD and VSS pins to induce TA=+25° C, fCK_SYS=32 MHz a functional disturbance conforms to IEC 1000-4-4 Class A 51/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electro magnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. Table 29. EMI characteristics Symbo Parameter l SEMI Peak level Monitored Frequency Band Conditions Flash devices: VDD_IO=3.3 V or 5 V, TA=+25° C, LQFP64 package conforming to SAE J 1752/3 Max vs. [fOSC4M/fHCLK] Unit 4/32MHz 4/60MHz 0.1 MHz to 30 MHz 22 26 30 MHz to 130 MHz 31 26 130 MHz to 1 GHz 19 23 SAE EMI Level >4 >4 dBµV - Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU and DLU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electro-Static discharge (ESD) Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models can be simulated: Human Body Model and Machine Model. This test conforms to the JESD22-A114A/A115A standard. Table 30. Symbol Absolute maximum ratings Ratings VESD(HBM) Electro-static discharge voltage (Human Body Model) VESD(MM) Electro-static discharge voltage (Machine Model) VESD(CDM) Electro-static discharge voltage (Charge Device Model) Conditions Unit 2000 TA=+25° C 1. Data based on product characterisation, not tested in production. 52/84 Maximum value(1) 200 750 V STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Static and dynamic latch-up ● LU: 3 complementary static tests are required on 10 parts to assess the latch-up performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application note AN1181. ● DLU: Electro-Static Discharges (one positive then one negative test) are applied to each pin of 3 samples when the micro is running to assess the latch-up performance in dynamic mode. Power supplies are set to the typical values, the oscillator is connected as near as possible to the pins of the micro and the component is put in reset mode. This test conforms to the IEC1000-4-2 and SAEJ1752/3 standards. For more details, refer to the application note AN1181. Table 31. Symbol LU DLU Electrical sensitivities Parameter Conditions Class(1) Static latch-up class TA=+25° C TA=+85° C TA=+105° C Class A Dynamic latch-up class VDD= 5.5 V, fOSC4M=4 MHz, fCK_SYS=32 MHz, TA=+25° C Class A 1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the JEDEC specifications, that means when a device belongs to Class A it exceeds the JEDEC standard. B Class strictly covers all the JEDEC criteria (international standard). 53/84 Electrical parameters 5.3.8 STR750Fxx STR751Fxx STR752Fxx STR755Fxx I/O port pin characteristics General characteristics Subject to general operating conditions for VDD_IO and TA unless otherwise specified. Table 32. General characteristics I/O static characteristics Symbol Parameter VIL Input low level voltage VIH Input high level voltage Vhys Schmitt trigger voltage hysteresis(1) Conditions Min Typ Max Unit 0.8 V 2 TTL ports 400 mV IINJ(PIN) Injected Current on any I/O pin ±4 ΣIINJ(PIN Total injected current (sum of all I/O and control pins) ± 25 (2) mA Input leakage current on robust pins See Section 5.3.12 on page 72 Input leakage current(3) VSS≤VIN≤VDD_IO Static current consumption(4) Floating input mode RPU Weak pull-up equivalent resistor(5) VIN=VSS RPD Weak pull-down equivalent resistor(5) VIN=VDD_IO CIO I/O pin capacitance Ilkg IS tw(IT)in ±1 µA 200 VDD_IO=3.3 V 50 95 200 kΩ VDD_IO=5 V 20 58 150 kΩ VDD_IO=3.3 V 25 80 180 kΩ VDD_IO=5 V 20 50 120 kΩ External interrupt/wake-up lines pulse time(6) 5 2 pF TAP 1. Hysteresis voltage between Schmitt trigger switching levels. 2. When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise refer to IINJ(PIN) specification. A positive injection is induced by VIN>VDD_IO while a negative injection is induced by VIN<VSS. Refer to Section 5.2 on page 32 for more details. 3. Leakage could be higher than max. if negative current is injected on adjacent pins. 4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor (see Figure 25). Data based on design simulation and/or technology characteristics, not tested in production. 5. The RPU pull-up and RPD pull-down equivalent resistor are based on a resistive transistor. 6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. 54/84 B STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Figure 25. Connecting unused I/O pins VDD STR7XXX 10kΩ 10kΩ UNUSED I/O PORT UNUSED I/O PORT STR7XXX Output driving current The GP I/Os have different drive capabilities: ● O2 outputs can sink or source up to +/-2 mA. ● O4 outputs can sink or source up to +/-4 mA. ● outputs can sink or source up to +/-8 mA or can sink +20 mA (with a relaxed VOL). In the application, the user must limit the number of I/O pins which can drive current to respect the absolute maximum rating specified in Section 5.2.2 : ● The sum of the current sourced by all the I/Os on VDD_IO, plus the maximum RUN consumption of the MCU sourced on VDD_IO, can not exceed the absolute maximum rating IVDD_IO. ● The sum of the current sunk by all the I/Os on VSS_IO plus the maximum RUN consumption of the MCU sunk on VSS_IO can not exceed the absolute maximum rating IVSS_IO. Subject to general operating conditions for VDD_IO and TA unless otherwise specified. 55/84 Electrical parameters Table 33. STR750Fxx STR751Fxx STR752Fxx STR755Fxx Output driving current I/O Output drive characteristics for VDD_IO = 3.0 to 3.6 V and EN33 bit =1 or VDD_IO = 4.5 to 5.5 V and EN33 bit =0 I/O Symbol Type Parameter Conditions VOL(1) Output low level voltage for a standard I/O pin when 8 pins are sunk at same IIO=+2 mA time VOH(2) Output high level voltage for an I/O pin I =-2 mA when 4 pins are sourced at same time IO VOL(1) Output low level voltage for a standard I/O pin when 8 pins are sunk at same IIO=+4 mA time VOH(2) Output high level voltage for an I/O pin I =-4 mA when 4 pins are sourced at same time IO O2 O4 Min O8 VOH(2) VDD_IO-0.8 0.4 VDD_IO-0.8 V 0.4 IIO=+20 mA, Output low level voltage for a high sink T ≤85°C A I/O pin when 4 pins are sunk at same T ≥85°C A time IIO=+8 mA Output high level voltage for an I/O pin I =-8 mA when 4 pins are sourced at same time IO Unit 0.4 Output low level voltage for a standard I/O pin when 8 pins are sunk at same IIO=+8 mA time VOL(1) Max 1.3 1.5 0.4 VDD_IO-0.8 1. The IIO current sunk must always respect the absolute maximum rating specified in Section 5.2.2 and the sum of IIO (I/O ports and control pins) must not exceed IVSS_IO. 2. The IIO current sourced must always respect the absolute maximum rating specified in Section 5.2.2 and the sum of IIO (I/O ports and control pins) must not exceed IVDD_IO. 56/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Output speed Subject to general operating conditions for VDD_IO and TA unless otherwise specified. Table 34. Output speed I/O dynamic characteristics for VDD_IO = 3.0 to 3.6V and EN33 bit =1 or VDD_IO = 4.5 to 5.5V and EN33 bit =0 I/O Type Symbol Parameter Conditions fmax(IO)out Maximum Frequency(1) O2 CL=50 pF tf(IO)out Output high to low level fall time(2) tr(IO)out Output low to high level rise time(2) fmax(IO)out Maximum Frequency(1) O4 tf(IO)out Output high to low level fall time(2) tr(IO)out Output low to high level rise time(2) Output high to low level fall time(2) tr(IO)out Output low to high level rise time(2) MHz 30 ns 33 25 MHz 12 CL=50 pF Between 10% and 90% ns 14 CL=50pF tf(IO)out 10 CL=50 pF Between 10% and 90% CL=50 pF fmax(IO)out Maximum Frequency(1) O8 Min Typ Max Unit 40 MHz 6 CL=50 pF Between 10% and 90% ns 6 1. The maximum frequency is defined as described in Figure 26. 2. Data based on product characterisation, not tested in production. Figure 26. I/O output speed definition 10% 90% 50% 50% 90% 10% EXTERNAL OUTPUT ON 50pF tr(IO)out tr(IO)out T Maximum frequency is achieved if (tr + tf) ≤ (2/3)T and if the duty cycle is (45-55%) when loaded by 50pF 57/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx NRSTIN and NRSTOUT pins NRSTIN Pin Input Driver is TTL/LVTTL as for all GP I/Os. A permanent pull-up is present which is the same as RPU (see : General characteristics on page 54) NRSTOUT Pin Output Driver is equivalent to the O2 type driver except that it works only as an open-drain (the P-MOS is de-activated). A permanent pull-up is present which is the same as RPU (see : General characteristics on page 54) Subject to general operating conditions for VDD_IO and TA unless otherwise specified. Table 35. NRSTIN and NRSTOUT pins Symbol Parameter Conditions VIL(NRSTIN) NRSTIN Input low level voltage(1) VIH(NRSTIN) NRSTIN Input high level voltage(1) Vhys(NRSTIN) NRSTIN Schmitt trigger voltage hysteresis(2) VOL(NRSTIN) NRSTOUT Output low level voltage(3) IIO=+2 mA RPU(NRSTIN) NRSTIN Weak pull-up equivalent resistor(4) VIN=VSS tw(RSTL)out Generated reset pulse duration (visible at NRSTOUT pin)(5) th(RSTL)in External reset pulse hold time at NRSTIN pin(6) tg(RSTL)in maximum negative spike duration filtered at NRSTIN pin(7) Min Typ 1) Max Unit 0.8 V 2 400 mV 0.4 V VDD_IO=3.3 V 25 50 100 kΩ VDD_IO=5 V 20 31 100 kΩ Internal reset source 15 20 At VDD_IO power-up(5) 20 µs When VDD_IO is established(5) 1 µs The time between two spikes must be higher than 1/2 of the spike duration. µs 150 ns 1. Data based on product characterisation, not tested in production. 2. Hysteresis voltage between Schmitt trigger switching levels. 3. The IIO current sunk must always respect the absolute maximum rating specified in Section 5.2.2 and the sum of IIO (I/O ports and control pins) must not exceed IVSS. 4. The RPU pull-up equivalent resistor are based on a resistive transistor 5. To guarantee the reset of the device, a minimum pulse of 15 µs has to be applied to the internal reset. At VDD_IO power-up, the built-in reset stretcher may not generate the 15 µs pulse duration while once VDD_IO is established, an external reset pulse will be internally stretched up to 15 µs thanks to the reset pulse stretcher. 6. The reset network (the resistor and two capacitors) protects the device against parasitic resets, especially in noisy environments. 7. In fact the filter is made to ignore all incoming pulses with short duration: - all negative spikes with a duration less than 150 ns are filtered - all trains of negative spikes with a ratio of 1/2 are filtered. This means that all spikes with a maximum duration of 150 ns with minimum interval between spikes of 75 ns are filtered. Data guaranteed by design, not tested in production. 58/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Figure 27. Recommended NRSTIN pin protection VDD_IO RPU Filter NRSTOUT TO RESET OTHER CHIPS PULSE GENERATOR INTERNAL RESET WATCHDOG RESET SOFTWARE RESET RSM RESET VDD_IO STR7X RPU NRSTIN EXTERNAL RESET CIRCUIT Filter 0.01µF 1. The user must ensure that the level on the NRSTIN pin can go below the VIL(NRSTIN) max. level specified in NRSTIN and NRSTOUT pins on page 58. Otherwise the reset will not be taken into account internally. 59/84 Electrical parameters 5.3.9 STR750Fxx STR751Fxx STR752Fxx STR755Fxx TB and TIM timer characteristics Subject to general operating conditions for VDD_IO, fCK_SYS, and TA unless otherwise specified. Refer to Section 5.3.8: I/O port pin characteristics on page 54 for more details on the input/output alternate function characteristics (output compare, input capture, external clock, PWM output...). Table 36. TB and TIM timers Symbol tw(ICAP)in Parameter Conditions Input capture TIM0,1,2 pulse time fCK_TIM(MAX) = fCK_SYS TB tres(TIM) Timer resolution time(1) fCK_TIM = fCK_SYS = 60 MHz fCK_TIM(MAX) = fCK_SYS TIM0,1,2 f CK_TIM = fCK_SYS = 60MHz fEXT ResTIM Timer fCK_TIM(MAX) = fCK_SYS external clock TIM0,1,2 f CK_TIM = fCK_SYS = frequency on 60 MHz TI1 or TI2 Min fCK_TIM = fCK_SYS = 60 MHz fCK_TIM = fCK_SYS = 60 MHz Max Unit 2 tCK_TIM 1 tCK_TIM 16.6(1) ns 1 tCK_TIM 16.6(1) ns 0 fCK_TIM/4 MHz 0 15 MHz 16 bit 1 65536 tCK_TIM 0.0166 1092 µs 1 65536 tCK_TIM 0.0166 1092 µs Timer resolution 16-bit Counter clock TB period when tCOUNTER internal clock is selected (16-bit TIM0,1,2 Prescaler) Typ 65536x65536 tCK_TIM TB Maximum tMAX_COUNT Possible Count fCK_TIM = fCK_SYS = 60 MHz 71.58 s 65536x65536 tCK_TIM TIM0,1,2 f CK_TIM = fCK_SYS = 60 MHz 71.58 s 1. Take into account the frequency limitation due to the I/O speed capability when outputting the PWM to I/O pin, described in : Output speed on page 57. 60/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Table 37. PWM Timer (PWM) Symbol Parameter Conditions fCK_TIM(MAX) = fCK_SYS tres(PWM) PWM resolution time ResPWM PWM resolution VOS(1) PWM/DAC output step voltage tCOUNTER Timer clock period when internal clock is selected Maximum Possible tMAX_COUNT Count fCK_TIM = fCK_SYS = 60 MHz Min Typ Max Unit 1 tCK_TIM 16.6(1) ns 16 bit VDD_IO=3.3 V, Res=16-bits 50(1) µV VDD_IO=5.0 V, Res=16-bits (1) µV fCK_TIM=60 MHz 76 1 65536 tCK_TIM 0.0166 1087 µs 65536x t 65536 CK_TIM fCK_TIM = fCK_SYS = 60 MHz 71.58 s 1. Take into account the frequency limitation due to the I/O speed capability when outputting the PWM to an I/O pin, as described in : Output speed on page 57. 61/84 Electrical parameters 5.3.10 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Communication interface characteristics SSP synchronous serial peripheral in master mode (SPI or TI mode) General operating conditions: V33, 3.0V to 3.3V, V18 =1.8V, CL ≈ 45 pF. Table 38. Symbol fSCK SSP master mode characteristics(1) Parameter Conditions SPI clock frequency(2) tr(SCK) SPI clock rise time tf(SCK) SPI clock fall time tw(SCKH) tw(SCKL) SCK high and low time tNSSLQV NSS low to Data Output MOSI valid time Min SSP0 16 SSP1 8 SSP0 14 SSP1 33 SSP0 11 SSP1 30 SSP0 19 SSP1 30 SSP0 0.5tSCK+15ns SSP1 0.5tSCK+30ns SSP0 0.5tSCK+15ns SSP1 0.5tSCK+30ns SSP0 tSCK+15ns SSP1 tSCK+30ns SCK last edge to NSS high CPHA = 1 SCK trigger edge to data output MOSI valid time SSP0 15 tSCKQV SSP1 30 SCK trigger edge to data output MOSI invalid time SSP0 0 tSCKQX SSP1 0 Data input (MISO) setup time w.r.t SCK sampling edge SSP0 25 tsu SSP1 25 Data input (MISO) hold time w.r.t SCK sampling edge SSP0 0 th SSP1 0 1. Data based on characterisation results, not tested in production. 2. Max frequency for the 2 SSPs is fPCLK/2; fPCLK max = 32 MHz. This takes into account the frequency limitation due to I/O speed capability. SSP0 uses IO4 type while SSP1 uses IO2 type I/Os. 62/84 Unit MHz CPHA = 0 tSCKNSSH Max ns STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Figure 28. SPI configuration - master mode, single transfer NSS OUTPUT tc(SCK) tSCKNSSH (CPHA=0) sample edge SCK OUTPUT CPHA=0 CPOL=0 sample edge trigger edge trigger edge CPHA=0 CPOL=1 CPHA=1 CPOL=0 trigger edge tSCKNSSH (CPHA=1) trigger edge sample edge sample edge CPHA=1 CPOL=1 tw(SCKH) tw(SCKL) tsu(MISO) MISO INPUT DONT CARE tr(SCK) tf(SCK) th(MISO) MSB IN BIT IN DONT CARE LSB IN tNSSLQV tSCKQX tSCKQV MOSI OUTPUT tSCKQX MSB OUT 1 OR 0 LSB OUT BIT OUT 1 OR 0 Figure 29. SPI configuration - master mode, continuous transfer, CPHA=0 tc(SCK) 1.5*tc(SCK) NSS OUTPUT SCK OUTPUT sample trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample CPOL=0 CPOL=1 MOSI OUTPUT MISO INPUT tNSSLQV 1 OR 0 DONT CARE tNSSLQV MSB OUT LSB OUT MSB IN LSB IN MSB OUT DONT CARE FRAME 1 MSB IN FRAME 2 Figure 30. SPI configuration - master mode, continuous transfer, CPHA=1 tc(SCK) NSS OUTPUT SCK OUTPUT trigger sample trigger sample trigger sample trigger samlpe trigger sample trigger sample trigger sample trigger sample trigger CPOL=0 CPOL=1 MOSI OUTPUT 1 OR 0 MISO INPUT DONT CARE MSB OUT LSB OUT MSB OUT MSB IN LSB IN FRAME 1 MSB IN FRAME 2 63/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Figure 31. TI configuration - master mode, single transfer NSS OUTPUT tc(SCK) trigger edge SCK OUTPUT sample edge tw(SCKH) trigger edge sample edge trigger edge sample edge tw(SCKL) tf(SCK) tsu(MISO) tr(SCK) th(MISO) MISO INPUT MSB IN DONT CARE tSCKQV MOSI OUTPUT 1 OR 0 DONT CARE LSB IN tSCKQX MSB OUT LSB OUT Figure 32. TI configuration - master mode, continuous transfer tc(SCK) tc(SCK) NSS OUTPUT trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample SCK OUTPUT MOSI OUTPUT 1 OR 0 MISO INPUT DONT CARE MSB OUT LSB OUT MSB OUT LSB OUT MSB IN LSB IN MSB IN LSB IN FRAME 1 64/84 FRAME 2 DONT CARE STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters SSP synchronous serial peripheral in slave mode (SPI or TI mode) Subject to general operating conditions with CL ≈ 45 pF Table 39. SSP slave mode characteristics(1) Symbol Parameter Conditions Min SSP0 fSCK SPI clock frequency SSP1 Max Unit 2.66 MHz (fPLCK/12) MHz NSS input setup time w.r.t SCK first edge SSP0 0 tsu(NSS) SSP1 0 NSS input hold time w.r.t SCK last edge SSP0 th(NSS) tPCLK+15ns SSP1 tPCLK+15ns NSS low to Data Output MISO valid time SSP0 tNSSLQV 2tPCLK 3tPCLK+30 ns SSP1 2tPCLK 3tPCLK+30 ns NSS low to Data Output MISO invalid time SSP0 tNSSLQZ 2tPCLK 3tPCLK+15 ns SSP1 2tPCLK 3tPCLK+15 ns SSP0 15 tSCKQV SCK trigger edge to data output MISO valid time SSP1 30 SCK trigger edge to data output MISO invalid time SSP0 tSCKQX 2tPCLK SSP1 2tPCLK MOSI setup time w.r.t SCK sampling edge SSP0 0 tsu(MOSI) SSP1 0 MOSI hold time w.r.t SCK sampling edge SSP0 th(MOSI) 3tPCLK+15 ns SSP1 3tPCLK+15 ns ns 1. Data based on characterisation results, not tested in production. Figure 33. SPI configuration, slave mode with CPHA=0, single transfer NSS INPUT SCK INPUT tsu(NSS) th(NSS) sample edge CPHA=0 CPOL=0 CPHA=0 CPOL=1 MSB OUT tNSSHQZ tSCKQX(MISO) tSCKQV(MISO) z DONT CARE tr(SCK) tf(SCK) tw(SCKH) tw(SCKL) tsu(SI) MOSI INPUT trigger edge tc(SCK) tNSSLQV MISO OUTPUT sample edge trigger edge BIT OUT LSB OUT z th(SI) MSB IN BIT1 IN LSB IN DONT CARE 65/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx Figure 34. SPI configuration - slave mode with CPHA=0, continuous transfer 1.5*tc(SCK) tc(SCK) 1.5*tc(SCK) NSS INPUT SCK INPUT sample trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample CPOL=0 CPOL=1 tNSHQZ tNSSLQV tNSSLQV z MISO OUTPUT MOSI INPUT DONT CARE MSB OUT LSB OUT MSB IN LSB IN z DONT CARE MSB OUT MSB IN FRAME 1 FRAME 2 Figure 35. SPI configuration, slave mode with CPHA=1, single transfer NSS INPUT tsu(NSS) CPHA=1 CPOL=0 SCK INPUT th(NSS) trigger edge trigger edge sample edge CPHA=1 CPOL=1 tc(SCK) tr(SCK) tf(SCK) tw(SCKH) tw(SCKL) tSCKQV(MISO) tNSSLQV MISO OUTPUT tNSSHQX tNSSHQZ tSCKQX(MISO) z MSB OUT tsu(SI) MOSI INPUT sample edge DONT CARE BIT OUT z LSB OUT th(SI) MSB IN DONT CARE LSB IN BIT1 IN Figure 36. SPI configuration - slave mode with CPHA=1, continuous transfer tc(SCK) NSS OUTPUT SCK OUTPUT trigger sample trigger sample trigger sample trigger sample trigger sample trigger CPOL=1 MOSI OUTPUT 1 OR 0 MISO INPUT DONT CARE MSB OUT LSB OUT MSB OUT MSB IN LSB IN FRAME 1 66/84 samlpe trigger CPOL=0 MSB IN FRAME 2 sample trigger sample trigger STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters Figure 37. TI configuration - slave mode, single transfer tsu(NSS) NSS INPUT tc(SCK) tc(SCK)/2 trigger edge SCK sample edge tc(SCK)/2 trigger edge sample edge trigger edge sample edge INPUT tw(SCKH) tw(SCKL) tf(SCK) tsu(MOSI) tr(SCK) th(MOSI) MOSI INPUT DONT CARE MSB IN tSCKQZ tSCKQV MISO OUTPUT z 1 OR 0 DONT CARE LSB IN tSCKQX MSB OUT z LSB OUT Figure 38. TI configuration - slave mode, continuous transfer tc(SCK) tsu(NSS) th(NSS) tc(SCK) NSS OUTPUT trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample trigger sample SCK OUTPUT MOSI INPUT DONT CARE MSB IN LSB IN MSB IN LSB IN MISO OUTPUT MSB OUT LSB OUT MSB OUT LSB OUT 1 OR 0 FRAME 1 DONT CARE FRAME 2 67/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx SMI - serial memory interface Subject to general operating conditions with CL ≈ 30 pF. Table 40. SMI characteristics(1) Symbol Parameter Min Max Unit 32(2)(3) fSMI_CK SMI clock frequency 48(4) tr(SMI_CK) SMI clock rise time 10 tf(SMI_CK) SMI clock fall time 8 MHz ns tv(SMI_DOUT) Data output valid time 10 th(SMI_DOUT) Data output hold time 0 tv(SMI_CSSx) CSS output valid time 10 th(SMI_CSSx) CSS output hold time 0 tsu(SMI_DIN) Data input setup time 0 th(SMI_DIN) Data input hold time 5 1. Data based on characterisation results, not tested in production. 2. Max. frequency = fPCLK/2 = 64/2 = 32 MHz. 3. Valid for all temperature ranges: -40 to 105 °C, with 30 pF load capacitance. 4. Valid up to 60 °C, with 10 pF load capacitance. Figure 39. SMI timing diagram tc(SMI_CK) SMI_CK OUTPUT tw(SMI_CKH) tw(SMI_CKL) tsu(SMI_DIN) th(SMI_DIN) tv(SMI_DOUT) th(SMI_DOUT) SMI_DIN INPUT MSB IN MSB OUT SMI_DOUT OUTPUT tv(SMI_CSS) BIT6 IN BIT6 OUT tr(SMI_CK) tf(SMI_CK) LSB IN LSB OUT th(SMI_CSS) SMI_CSSX OUTPUT I2C - Inter IC control interface Subject to general operating conditions for VDD_IO, fPCLK, and TA unless otherwise specified. The I2C interface meets the requirements of the Standard I2C communication protocol described in the following table with the restriction mentioned below: Restriction: The I/O pins which SDA and SCL are mapped to are not “True” OpenDrain: when configured as open-drain, the PMOS connected between the I/O pin and VDD_IO is disabled, but it is still present. Also, there is a protection diode between the I/O pin and VDD_IO. Consequently, when using this I2C in a multi-master network, it is 68/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters not possible to power off the STR7x while some another I2C master node remains powered on: otherwise, the STR7x will be powered by the protection diode. Refer to I/O port characteristics for more details on the input/output alternate function characteristics (SDA and SCL). Table 41. SDA and SCL characteristics Symbol Standard mode I2C Parameter Min(2) Fast mode I2C(1) Unit (2) (2) Max (2) Min Max tw(SCLL) SCL clock low time 4.7 1.3 tw(SCLH) SCL clock high time 4.0 0.6 tsu(SDA) SDA setup time 250 100 th(SDA) SDA data hold time 0(3) 0(4) 900(3) tr(SDA) tr(SCL) SDA and SCL rise time 1000 20+0.1Cb 300 tf(SDA) tf(SCL) SDA and SCL fall time 300 20+0.1Cb 300 th(STA) START condition hold time 4.0 0.6 tsu(STA) Repeated START condition setup time 4.7 0.6 tsu(STO) STOP condition setup time 4.0 0.6 µs 4.7 1.3 µs tw(STO:STA) STOP to START condition time (bus free) Capacitive load for each bus line Cb 1. fPCLK, must be at least 8 MHz to achieve max fast µs µs 400 I2C ns 400 pF speed (400 kHz). 2. Data based on standard I2C protocol requirement, not tested in production. 3. The maximum hold time of the START condition has only to be met if the interface does not stretch the low period of SCL signal. 4. The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the undefined region of the falling edge of SCL. Figure 40. Typical application with I2C bus and timing diagram VDD 4.7kΩ VDD 4.7kΩ I2C BUS 100Ω SDA 100Ω SCL STRT75X REPEATED START START tsu(STA) tw(STO:STA) START SDA tr(SDA) tf(SDA) tsu(SDA) STOP th(SDA) SCL th(STA) tw(SCKH) tw(SCKL) tr(SCK) tf(SCK) tsu(STO) 1. Measurement points are done at CMOS levels: 0.3xVDD and 0.7xVDD. 69/84 Electrical parameters 5.3.11 STR750Fxx STR751Fxx STR752Fxx STR755Fxx USB characteristics The USB interface is USB-IF certified (Full Speed). Table 42. USB startup time Symbol Parameter tSTARTUP USB transceiver startup time Table 43. Conditions Max Unit 1 µs USB characteristics USB DC Electrical Characteristics Symbol Parameter Min.(1)(2) Max.(1)(2) Unit Conditions Input Levels VDI Differential Input Sensitivity I(DP, DM) 0.2 VCM Differential Common Mode Range Includes VDI range 0.8 2.5 VSE Single Ended Receiver Threshold 1.3 2.0 V Output Levels VOL Static Output Level Low RL of 1.5 kΩ to 3.6V(3) VOH Static Output Level High RL of 15 kΩ to VSS(3) 0.3 V 2.8 3.6 1. All the voltages are measured from the local ground potential. 2. It is important to be aware that the DP/DM pins are not 5 V tolerant. As a consequence, in case of a a shortcut with Vbus (typ: 5.0V), the protection diodes of the DP/DM pins will be direct biased . This will not damage the device if not more than 50 mA is sunk for longer than 24 hours but the reliability may be affected. 3. RL is the load connected on the USB drivers Figure 41. USB: data signal rise and fall time Differential Data Lines Crossover points VCRS VSS tr tf Table 44. Symbol USB: Full speed electrical characteristics Parameter Conditions Min Max Unit Driver characteristics: 70/84 tr Rise time(1) CL=50 pF 4 20 ns tf Time1) CL=50 pF 4 20 ns Fall STR750Fxx STR751Fxx STR752Fxx STR755Fxx Table 44. Electrical parameters USB: Full speed electrical characteristics Symbol Parameter Conditions Min Max Unit trfm Rise/ Fall Time matching tr/tf 90 110 % VCRS Output signal Crossover Voltage 1.3 2.0 V 1. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB Specification - Chapter 7 (version 2.0). 71/84 Electrical parameters 5.3.12 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 10-bit ADC characteristics Subject to general operating conditions for VDDA_ADC, fPCLK, and TA unless otherwise specified. Table 45. Symbol 10-bit ADC characteristics Parameter Conditions Min Typ(1) Max Unit 0.4 8 MHz VSSA_ADC VDDA_ADC V fADC ADC clock frequency VAIN Conversion voltage range(2) RAIN External input impedance(3)(4) 10 kΩ CAIN External capacitor on analog input(3)(4) 6.8 pF +400 µA injected on any pin 1 µA -400 µA injected on any pin except specific adjacent pins in Table 46 1 µA Ilkg Induced input leakage current -400µA injected on specific adjacent pins in Table 46 CADC Internal sample and hold capacitor tCAL Calibration Time tCONV IADC Total Conversion time (including sampling time) fCK_ADC=8 MHz fCK_ADC=8 MHz Sunk on VDDA_ADC 40 µA 3.5 pF 725.25 µs 5802 1/fADC 3.75 µs 30 (11 for sampling + 19 for Successive Approximation) 1/fADC 3.7 mA 1. Unless otherwise specified, typical data are based on TA=25°C. They are given only as design guidelines and are not tested. 2. Calibration is needed once after each power-up. 3. CPARASITIC represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (3 pF). A high CPARASITIC value will downgrade conversion accuracy. To remedy this, fADC should be reduced. 4. Depending on the input signal variation (fAIN), CAIN can be increased for stabilization time and reduced to allow the use of a larger serial resistor (RAIN). It is valid for all fADC frequencies ≤ 8 MHz. 72/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Electrical parameters ADC accuracy vs. negative injection current Injecting negative current on specific pins listed in Table 46 (generally adjacent to the analog input pin being converted) should be avoided as this significantly reduces the accuracy of the conversion being performed. It is recommended to add a Schottky diode (pin to ground) to pins which may potentially inject negative current. Table 46. List of adjacent pins Analog input Related adjacent pins a None AIN1/P0.03 None AIN2/P0.12 P0.11 AIN3/P0.17 P0.18 and P0.16 AIN4/P0.19 P0.24 AIN5/P0.22 None AIN6/P0.23 P2.04 AIN7/P0.27 P1.11 and P0.26 AIN8/P0.29 P0.30 and P0.28 AIN9/P1.04 None AIN10/P1.06 P1.05 AIN11/P1.08 P1.04 and P1.13 AIN12/P1.11 P2.17 and P0.27 AIN13/P1.12 None AIN14/P1.13 P1.14 and P1.01 AIN15/P1.14 None Figure 42. Typical application with ADC VDD STR75XX VT 0.6V RAIN 2kΩ(max) AINx VAIN CAIN VT 0.6V IL ±1µA 10-Bit A/D Conversion CADC 3.2pF Analog power supply and reference pins The VDDA_ADC and VSSA_ADC pins are the analog power supply of the A/D converter cell. Separation of the digital and analog power pins allow board designers to improve A/D performance. Conversion accuracy can be impacted by voltage drops and noise in the event of heavily loaded or badly decoupled power supply lines (see : General PCB design guidelines on page 74). 73/84 Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx General PCB design guidelines To obtain best results, some general design and layout rules should be followed when designing the application PCB to shield the noise-sensitive, analog physical interface from noise-generating CMOS logic signals. ● Use separate digital and analog planes. The analog ground plane should be connected to the digital ground plane via a single point on the PCB. ● Filter power to the analog power planes. It is recommended to connect capacitors, with good high frequency characteristics, between the power and ground lines, placing 0.1 µF and optionally, if needed 10 pF capacitors as close as possible to the STR7 power supply pins and a 1 to 10 µF capacitor close to the power source (see Figure 43). ● The analog and digital power supplies should be connected in a star network. Do not use a resistor, as VDDA_ADC is used as a reference voltage by the A/D converter and any resistance would cause a voltage drop and a loss of accuracy. ● Properly place components and route the signal traces on the PCB to shield the analog inputs. Analog signals paths should run over the analog ground plane and be as short as possible. Isolate analog signals from digital signals that may switch while the analog inputs are being sampled by the A/D converter. Do not toggle digital outputs near the A/D input being converted. Software filtering of spurious conversion results For EMC performance reasons, it is recommended to filter A/D conversion outliers using software filtering techniques. Figure 43. Power supply filtering STR75XX 1 to 10µF 0.1µF STR7 DIGITAL NOISE FILTERING VSS VDD_IO VDD POWER SUPPLY SOURCE (3.3V or 5.0V) 0.1µF EXTERNAL NOISE FILTERING 74/84 VDDA_ADC VSSA_ADC STR750Fxx STR751Fxx STR752Fxx STR755Fxx Table 47. Electrical parameters ADC accuracy ADC accuracy with fCK_SYS = 20 MHz, fADC=8 MHz, RAIN < 10 kΩ This assumes that the ADC is calibrated(1) Symbol Parameter Conditions |ET| Total unadjusted error (2) (3) |EO| Offset error(2) (3) EG Gain Error (2) (3) |ED| Differential linearity error(2) (3) |EL| Integral linearity error (2) (3) VDDA_ADC=3.3 V VDDA_ADC=5.0 V VDDA_ADC=3.3 V VDDA_ADC=5.0 V VDDA_ADC=3.3 V VDDA_ADC=5.0 V VDDA_ADC=3.3 V VDDA_ADC=5.0 V VDDA_ADC=3.3 V VDDA_ADC=5.0 V Typ Max 1 1.2 1 1.2 0.15 0.5 0.15 0.5 -0.8 -0.2 -0.8 -0.2 0.7 0.9 0.7 0.9 0.6 0.8 0.6 0.8 Unit LSB 1. Calibration is needed once after each power-up. 2. Refer to ADC accuracy vs. negative injection current on page 73 3. ADC Accuracy vs. MCO (Main Clock Output): the ADC accuracy can be significantly degraded when activating the MCO on pin P0.01 while converting an analog channel (especially those which are close to the MCO pin). To avoid this, when an ADC conversion is launched, it is strongly recommended to disable the MCO. Figure 44. ADC accuracy characteristics Digital Result ADCDR EG 1023 1022 1021 1LSB IDEAL V –V DDA SSA = ----------------------------------------- 1024 (2) ET (3) 7 (1) 6 5 4 (1) Example of an actual transfer curve (2) The ideal transfer curve (3) End point correlation line EO EL 3 ED 2 ET=Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO=Offset Error: deviation between the first actual transition and the first ideal one. EG=Gain Error: deviation between the last ideal transition and the last actual one. ED=Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL=Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. 1 LSBIDEAL 1 0 1 VSSA 2 3 4 5 6 7 Vin 1021 1022 1023 1024 VDDA 75/84 Package characteristics 6 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Package characteristics In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK® specifications are available at www.st.com. 6.1 Package mechanical data Figure 45. 64-pin low profile quad flat package (10x10) 0.10mm .004 seating plane D D1 D3 A A2 A1 Dim. Min Typ A B e E3E1 E c Max Min Typ Max 1.60 0.0630 0.15 0.0020 0.0059 A1 0.05 A2 1.35 1.40 1.45 0.0531 0.0551 0.0571 b 0.17 0.22 0.27 0.0067 0.0087 0.0106 C 0.09 0.20 0.0035 0.0079 D 12.00 0.4724 D1 10.00 0.3937 E 12.00 0.4724 E1 10.00 0.3937 e 0.50 K 0° 3.5° L 0.45 0.60 L1 M x 45° inches(1) mm 0.0197 7° 0° 3.5° 1.00 0.0394 Number of pins PIN 1 IDENTIFICATION N 1. L1 L K 76/84 7° 0.75 0.0177 0.0236 0.0295 64 Values in inches are converted from mm and rounded to 4 decimal digits. STR750Fxx STR751Fxx STR752Fxx STR755Fxx Package characteristics Figure 46. 100-pin low profile flat package (14x14) inches(1) mm Dim. Min Typ Max Min Typ Max A D D1 A A1 A2 b C D D1 E E1 e θ L L1 A2 A1 b e E1 E c L1 L θ N 1.60 0.05 0.15 0.0020 1.35 1.40 1.45 0.0531 0.0551 0.17 0.22 0.27 0.0067 0.0087 0.09 0.20 0.0035 16.00 0.6299 14.00 0.5512 16.00 0.6299 14.00 0.5512 0.50 0.0197 0° 3.5° 7° 0° 3.5° 0.45 0.60 0.75 0.0177 0.0236 1.00 0.0394 Number of Pins 100 0.0630 0.0059 0.0571 0.0106 0.0079 7° 0.0295 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 47. 64-ball low profile fine pitch ball grid array package inches(1) mm Dim. Min A A1 A2 b D D1 E E1 e f ddd Typ Max 1.210 0.270 0.450 7.750 7.750 0.720 1.050 Min Typ 1.700 0.0476 0.0106 1.120 0.500 8.000 5.600 8.000 5.600 0.800 1.200 N 0.550 0.0177 8.150 0.3051 8.150 0.3051 Max 0.0669 0.0441 0.0197 0.3150 0.2205 0.3150 0.2205 0.0315 0.0472 0.880 0.0283 1.350 0.0413 0.120 Number of Pins 64 0.0217 0.3209 0.3209 0.0346 0.0531 0.0047 1. Values in inches are converted from mm and rounded to 4 decimal digits. 77/84 Package characteristics STR750Fxx STR751Fxx STR752Fxx STR755Fxx Figure 48. 100-ball low profile fine pitch ball grid array package inches(1) mm Dim. Min A A1 A2 A3 A4 b D D1 E E1 e F ddd eee fff Typ Max Min Typ 1.700 0.270 9.85 N 0.0669 0.0106 1.085 0.30 0.45 9.85 Max 0.50 10.00 7.20 10.00 7.20 0.80 1.40 0.0427 0.0118 0.80 0.55 10.15 0.0315 0.0177 0.0197 0.0217 0.3878 0.3937 0.3996 0.2835 10.15 0.3878 0.3937 0.3996 0.2835 0.0315 0.055 0.12 0.005 0.15 0.006 0.08 0.003 Number of Balls 100 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 49. Recommended PCB design rules (0.80/0.75mm pitch BGA) Dpad 0.37 mm 0.52 mm typ. (depends on solder Dsm mask registration tolerance Solder paste 0.37 mm aperture diameter – Non solder mask defined pads are recommended – 4 to 6 mils screen print Dpad Dsm 78/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 6.2 Package characteristics Thermal characteristics The maximum chip junction temperature (TJmax) must never exceed the values given in Table 10: General operating conditions on page 34. The maximum chip-junction temperature, TJmax, in degrees Celsius, may be calculated using the following equation: TJmax = TAmax + (PDmax x ΘJA) Where: – TAmax is the maximum Ambient Temperature in °C, – ΘJA is the Package Junction-to-Ambient Thermal Resistance, in ° C/W, – PDmax is the sum of PINTmax and PI/Omax (PDmax = PINTmax + PI/Omax), – PINTmax is the product of IDD and VDD, expressed in Watts. This is the maximum chip internal power. – PI/Omax represents the maximum Power Dissipation on Output Pins. Where: PI/Omax = Σ (VOL*IOL) + Σ((VDD-VOH)*IOH), taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the application. Table 48. Thermal characteristics(1) Symbol Parameter Value Unit ΘJA Thermal Resistance Junction-Ambient LQFP 100 - 14 x 14 mm / 0.5 mm pitch 46 °C/W ΘJA Thermal Resistance Junction-Ambient LQFP 64 - 10 x 10 mm / 0.5 mm pitch 45 °C/W ΘJA Thermal Resistance Junction-Ambient LFBGA 64 - 8 x 8 x 1.7mm 58 °C/W ΘJA Thermal Resistance Junction-Ambient LFBGA 100 - 10 x 10 x 1.7mm 41 °C/W 1. Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural convection environment. 6.2.1 Reference document JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural Convection (Still Air). Available from www.jedec.org 79/84 Package characteristics 6.2.2 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Selecting the product temperature range When ordering the microcontroller, the temperature range is specified in the order code Table 49: Order codes on page 81. The following example shows how to calculate the temperature range needed for a given application. Assuming the following application conditions: Maximum ambient temperature TAmax= 82 °C (measured according to JESD51-2), IDDmax=8 mA, VDD = 5 V, maximum 20 I/Os used at the same time in output at low level with IOL = 8 mA, VOL= 0.4 V PINTmax = 8 mA x 5 V= 400 mW PIOmax = 20 x 8 mA x 0.4V = 64 mW This gives: PINTmax= 400 mW and PIOmax 64 mW: PDmax = 400 mW + 64 mW Thus: PDmax = 464 mW Using the values obtained in Table 48 TJmax is calculated as follows: – For LQFP100, 46°C/W TJmax = 82° C + (46° C/W x 464 mW) = 82°C + 21°C = 103° C This is within the range of the suffix 6 version parts (-40 < TJ < 105° C). In this case, parts must be ordered at least with the temperature range suffix 6 (see Table 49: Order codes on page 81). – For BGA64, 58°C/W TJmax = 82° C + (58° C/W x 464 mW) = 82°C + 27°C = 109° C This is within the range of the suffix 7 version parts (-40 < TJ < 125° C). In this case, parts must be ordered at least with the temperature range suffix 7 (see Table 49: Order codes on page 81). Figure 50. LQFP100 PDmax vs TA 700 P D (mW) 600 500 Suffix 6 400 Suffix 7 300 200 100 TA (° C) 80/84 12 5 11 5 10 5 95 85 75 0 STR750Fxx STR751Fxx STR752Fxx STR755Fxx 7 Order codes Order codes Table 49. Order codes Flash Prog. Memory Partnumber (Bank 0) Package USB Periph Periph Yes Yes -40 to +85°C - Yes -40 to +85°C Yes - -40 to +85°C Yes - -40 to +105°C - - -40 to +85°C Kbytes STR750FV0T6 64 STR750FV1T6 128 STR750FV2T6 256 STR750FV0H6 64 STR750FV1H6 128 STR750FV2H6 256 STR751FR0T6 64 STR751FR1T6 128 STR751FR2T6 256 STR751FR0H6 64 STR751FR1H6 128 STR751FR2H6 256 STR752FR0T6 64 STR752FR1T6 128 STR752FR2T6 256 STR752FR0H6 64 STR752FR1H6 128 STR752FR2H6 256 STR752FR0T7 64 STR752FR1T7 128 STR752FR2T7 256 STR752FR0H7 64 STR752FR1H7 128 STR752FR2H7 256 STR755FR0T6 64 STR755FR1T6 128 STR755FR2T6 256 STR755FR0H6 64 STR755FR1H6 128 STR755FR2H6 256 Nominal CAN Temp. Range (TA) LQFP100 14x14 LFBGA100 10x10 LQFP64 10x10 LFBGA64 8x8 LQFP64 10x10 LFBGA64 8x8 LQFP64 10x10 LFBGA64 8x8 LQFP64 10x10 LFBGA64 8x8 81/84 Order codes STR750Fxx STR751Fxx STR752Fxx STR755Fxx Table 49. Order codes (continued) Flash Prog. Memory Partnumber (Bank 0) Package CAN USB Periph Periph - - Kbytes 82/84 STR755FV0T6 64 STR755FV1T6 128 STR755FV2T6 256 STR755FV0H6 64 STR755FV1H6 128 STR755FV2H6 256 Nominal Temp. Range (TA) LQFP100 14x14 LFBGA100 10x10 -40 to +85°C STR750Fxx STR751Fxx STR752Fxx STR755Fxx 8 Revision history Revision history Table 50. Document revision history Date Revision 25-Sep-2006 1 Initial release 30-Oct-2006 2 Added power consumption data for 5V operation in Section 5 3 Changed datasheet title from STR750F to STR750FXX STR751Fxx STR752Fxx STR755xx. Added Table 1: Device summary on page 1 Added note 1 to Table 6 Added STOP mode IDD max. values in Table 14 Updated XT2 driving current in Table 23. Updated RPD in Table 32 Updated Table 21: XRTC1 external clock source on page 45 Updated Table 34: Output speed on page 57 Added characteristics for SSP synchronous serial peripheral in master mode (SPI or TI mode) on page 62 and SSP synchronous serial peripheral in slave mode (SPI or TI mode) on page 65 Added characteristics for SMI - serial memory interface on page 68 Added Table 42: USB startup time on page 70 4 Updated Section 5.2.3: Thermal characteristics on page 33 Updated PD, TJ and TA in Section 5.3: Operating conditions on page 34 Updated Table 20: XT1 external clock source on page 44 Updated Table 21: XRTC1 external clock source on page 45 Updated Section 6: Package characteristics on page 76 (inches rounded to 4 decimal digits instead of 3) Updated Ordering information Section 7: Order codes on page 81 04-Jul-2007 23-Oct-2007 Description of Changes 83/84 STR750Fxx STR751Fxx STR752Fxx STR755Fxx Please Read Carefully: Information in this document is provided solely in connection with ST products. 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