TI TPS74901KTWR

TPS749xx
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SBVS082B – JUNE 2007 – REVISED OCTOBER 2007
3.0A Low Dropout Linear Regulator with Programmable Soft-Start
FEATURES
1
•
•
•
•
2
•
•
•
•
•
•
•
Ultra-Low VIN and VOUT Range: 0.8V to 5.5V
VBIAS Range: 2.7V to 5.5V
Low Dropout: 120mV (typ) at 3.0A, VBIAS = 5V
Power-Good (PG) Output Allows Supply
Monitoring or Provides a Sequencing Signal
for Other Supplies
2% Accuracy Over Line/Load/Temperature
Programmable Soft-Start Provides Linear
Voltage Startup
VBIAS Permits Low VIN Operation with Good
Transient Response
Stable with Any Output Capacitor ≥ 2.2μF
Available in 5mm × 5mm × 1mm QFN and
DDPAK-7 Packages
Open-Drain Power-Good
Active High Enable
APPLICATIONS
•
•
•
•
•
FPGA Applications
DSP Core and I/O Voltages
Post-Regulation Applications
Applications with Special Start-Up Time or
Sequencing Requirements
Hot-Swap and Inrush Controls
DESCRIPTION
The TPS749xx low-dropout (LDO) linear regulator
provides an easy-to-use robust power management
solution for a wide variety of applications.
User-programmable soft-start minimizes stress on the
input power source by reducing capacitive inrush
current on start-up. The soft-start is monotonic and
well-suited for powering many different types of
processors and ASICs. The enable input and
power-good output allow easy sequencing with
external regulators. This complete flexibility permits
the user to configure a solution that meets the
sequencing requirements of FPGAs, DSPs, and other
applications with special start-up requirements.
A precision reference and error amplifier deliver 2%
accuracy over load, line, temperature, and process.
The device is stable with any type of capacitor
≥ 2.2μF, and the device is fully specified from –40°C
to +125°C. The TPS749xx is offered in a small (5mm
× 5mm) QFN package, yielding a highly compact total
solution size. It is also available in a DDPAK-7.
blank
blank
blank
blank
blank
blank
VIN
IN
CIN
R3
BIAS
EN
VBIAS
TPS74901
VOUT
R1
GND
CSS
CSS = 0.001mF
OUT
SS
CBIAS
CSS = 0mF
PG
VOUT
CSS = 0.0047mF
1V/div
COUT
FB
R2
1.2V
Figure 1. Typical Application Circuit (Adjustable)
1V/div
VEN
0V
Time (1ms/div)
Figure 2. Turn-On Response
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
TPS749xx
www.ti.com
SBVS082B – JUNE 2007 – REVISED OCTOBER 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
VOUT (2)
PRODUCT
TPS749xxyyyz
(1)
(2)
(3)
XX is nominal output voltage (for example, 12 = 1.2V, 15 = 1.5V, 01 = Adjustable). (3)
YYY is package designator.
Z is package quantity.
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
Fixed output voltages from 0.8V to 3.3V are available; minimum order quantities may apply. Contact factory for details and availability.
For fixed 0.8V operation, tie FB to OUT.
ABSOLUTE MAXIMUM RATINGS (1)
At TJ = –40°C to +125°C, unless otherwise noted. All voltages are with respect to GND.
TPS749xx
UNIT
VIN, VBIAS
Input voltage range
–0.3 to +6
V
VEN
Enable voltage range
–0.3 to +6
V
VPG
Power-good voltage range
–0.3 to +6
V
IPG
PG sink current
0 to +1.5
mA
VSS
SS pin voltage range
–0.3 to +6
V
VFB
Feedback pin voltage range
–0.3 to +6
V
VOUT
Output voltage range
–0.3 to VIN + 0.3
V
IOUT
Maximum output current
Internally limited
Output short-circuit duration
Indefinite
PDISS
Continuous total power dissipation
TJ
Operating junction temperature range
–40 to +125
°C
TSTG
Storage junction temperature range
–55 to +150
°C
(1)
See Dissipation Ratings Table
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability.
DISSIPATION RATINGS
(1)
(2)
2
PACKAGE
θJA
θJC
TA < +25°C
POWER RATING
DERATING FACTOR
ABOVE TA = +25°C
RGW (QFN) (1)
36.5°C/W
4.05°C/W
2.74W
27.4mW/°C
KTW (DDPAK) (2)
18.8°C/W
2.32°C/W
5.32W
53.2mW/°C
See Figure 29 – Figure 31 for PCB layout description.
See Figure 32 – Figure 33 for PCB layout description.
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ELECTRICAL CHARACTERISTICS
At TJ = –40°C to +125°C, VEN = 1.1V, VIN = VOUT + 0.3V, CBIAS = 0.1μF, CIN = COUT = 10μF, CNR = 1nF, IOUT = 50mA, and
VBIAS = 5.0V, unless otherwise noted. Typical values are at TJ = +25°C.
TPS74901
PARAMETER
TEST CONDITIONS
MAX
UNIT
VIN Input voltage range
VOUT + VDO
5.5
V
VBIAS Bias pin voltage range
2.7
5.5
V
0.806
V
3.6
V
VREF Internal reference (Adj.)
TJ = +25°C
0.798
VREF
Accuracy
(RGW package) (1)
VOUT + 2.2V ≤ VBIAS ≤ 5.5V,
50mA ≤ IOUT ≤ 3.0A
–2
±0.5
2
%
Accuracy
(KTW package) (1)
VOUT + 2.4V ≤ VBIAS ≤ 5.5V,
50mA ≤ IOUT ≤ 3.0A
–2
±0.5
2
%
VOUT/VIN Line regulation
VOUT
VOUT/IOUT Load regulation
VDO
VIN dropout voltage
(2)
VBIAS dropout voltage (2)
ICL Current limit
+ 0.3 ≤ VIN ≤ 5.5V
Shutdown supply current
(IGND)
%/V
50mA ≤ IOUT ≤ 3.0A
0.09
%/A
IOUT = 3.0A,
VBIAS – VOUT (NOM) ≥ 3.25V (3)
120
280
mV
IOUT = 3.0A, VIN = VBIAS
1.31
1.75
V
VOUT = 80% × VOUT (NOM), RGW
Package
3.9
4.6
5.5
VOUT = 80% × VOUT (NOM), KTW
Package
3.8
4.6
5.5
1
2
mA
1
50
μA
0.150
1
μA
A
VEN ≤ 0.4V
IFB Feedback pin current
Power-supply rejection
(VIN to VOUT)
PSRR
Power-supply rejection
(VBIAS to VOUT)
Noise Output noise voltage
tSTR Minimum startup time
ISS Soft-start charging current
VEN,
–1
1kHz, IOUT = 1.5A,
VIN = 1.8V, VOUT = 1.5V
60
300kHz, IOUT = 1.5A,
VIN = 1.8V, VOUT = 1.5V
30
1kHz, IOUT = 1.5A,
VIN = 1.8V, VOUT = 1.5V
50
300kHz, IOUT = 1.5A,
VIN = 1.8V, VOUT = 1.5V
30
100Hz to 100kHz,
IOUT = 3.0A, CSS = 0.001μF
25 × VOUT
RLOAD for IOUT = 1.0A, CSS = open
200
μs
VSS = 0.4V
440
nA
dB
dB
HI
Enable input high level
1.1
5.5
Enable input low level
0
0.4
HYS
Enable pin hysteresis
50
mV
Enable pin deglitch time
20
μs
VEN,
DG
IEN Enable pin current
VIT PG trip threshold
VEN = 5V
VOUT decreasing
85
VHYS PG trip hysteresis
VPG, LO PG output low voltage
IPG, LKG PG leakage current
(1)
(2)
(3)
μVRMS
LO
VEN,
VEN,
0.802
0.03
(NOM)
IBIAS Bias pin current
ISHDN
TYP
VIN = 5V, IOUT = 3.0V
Output voltage range
VOUT
MIN
TJ
Operating junction
temperature
TSD
Thermal shutdown
temperature
V
0.1
1
μA
90
94
%VOUT
3
IPG = 1mA (sinking), VOUT < VIT
VPG = 5.25V, VOUT > VIT
V
0.1
–40
Shutdown, temperature increasing
+165
Reset, temperature decreasing
+140
%VOUT
0.3
V
1
μA
+125
°C
°C
Adjustable devices tested at 0.8V; resistor tolerance is not taken into account.
Dropout is defined as the voltage from VIN to VOUT when VOUT is 3% below nominal.
3.25V is a test condition of this device and can be adjusted by referring to Figure 8.
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SBVS082B – JUNE 2007 – REVISED OCTOBER 2007
BLOCK DIAGRAM
OUT
IN
Current
Limit
BIAS
UVLO
Thermal
Limit
0.44mA
VOUT
R1
SS
CSS
Soft-Start
Discharge
0.8V
Reference
FB
PG
Hysteresis
and Deglitch
EN
R2
0.9 ´ VREF
GND
Table 1. Standard 1% Resistor Values for Programming the Output Voltage (1)
(1)
R1 (kΩ)
R2 (kΩ)
VOUT (V)
Short
Open
0.8
0.619
4.99
0.9
1.13
4.53
1.0
1.37
4.42
1.05
1.87
4.99
1.1
2.49
4.99
1.2
4.12
4.75
1.5
3.57
2.87
1.8
3.57
1.69
2.5
3.57
1.15
3.3
VOUT = 0.8 × (1 + R1/R2)
Table 2. Standard Capacitor Values for Programming the Soft-Start Time (1)
(1)
4
CSS
SOFT-START TIME
Open
0.1ms
470pF
0.5ms
1000pF
1ms
4700pF
5ms
0.01μF
10ms
0.015μF
16ms
tSS(s) = 0.8 × CSS(F)/7.5 × 10
–7
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PIN ASSIGNMENTS
RGW PACKAGE
QFN-20
(TOP VIEW)
IN
NC
NC
NC
OUT
5
4
3
2
1
KTW PACKAGE
DDPAK-7
(TOP VIEW)
IN
6
20
OUT
IN
7
19
OUT
IN
8
18
OUT
PG
9
17
NC
BIAS
10
16
FB
12
13
14
15
GND
NC
NC
SS
SS
FB
OUT
GND
IN
BIAS
EN
11
EN
1 2 3 4 5 6 7
PIN DESCRIPTIONS
NAME
KTW (DDPAK)
RGW (QFN)
DESCRIPTION
IN
5
5–8
Unregulated input to the device.
EN
7
11
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts
the regulator into shutdown mode. This pin must not be left floating.
SS
1
15
Soft-Start pin. A capacitor connected on this pin to ground sets the start-up
time. If this pin is left floating, the regulator output soft-start ramp time is
typically 100μs.
BIAS
6
10
Bias input voltage for error amplifier, reference, and internal control circuits.
PG
N/A
9
Power-Good (PG) is an open-drain, active-high output that indicates the status
of VOUT. When VOUT exceeds the PG trip threshold, the PG pin goes into a
high-impedance state. When VOUT is below this threshold the pin is driven to a
low-impedance state. A pull-up resistor from 10kΩ to 1MΩ should be connected
from this pin to a supply up to 5.5V. The supply can be higher than the input
voltage. Alternatively, the PG pin can be left floating if output monitoring is not
necessary.
FB
2
16
This pin is the feedback connection to the center tap of an external resistor
divider network that sets the output voltage. This pin must not be left floating.
OUT
3
1, 18–20
NC
N/A
2–4, 13, 14, 17
GND
4
12
PAD/TAB
Regulated output voltage. A small capacitor (total typical capacitance ≥ 2.2μF,
ceramic) is needed from this pin to ground to assure stability.
No connection. This pin can be left floating or connected to GND to allow better
thermal contact to the top-side plane.
Ground
Should be soldered to the ground plane for increased thermal performance.
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TYPICAL CHARACTERISTICS
At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 50mA, VEN = VIN, CIN = 1μF, CBIAS = 4.7μF, and COUT = 10μF,
unless otherwise noted.
VBIAS LINE REGULATION
0.5
0.15
0.4
0.3
0.10
Change in VOUT (%)
Change in VOUT (%)
VIN LINE REGULATION
0.20
-40°C
0.05
0
+25°C
-0.05
+125°C
-0.01
0.2
-40°C
0.1
0
-0.1
+125°C
-0.2
+25°C
-0.3
-0.15
-0.4
-0.20
-0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.5
5.0
1.0
1.5
2.0
VIN - VOUT (V)
Figure 3.
3.0
3.5
4.0
Figure 4.
LOAD REGULATION
LOAD REGULATION
1.0
0.5
0.4
0.8
-40°C
03
0.6
Change in VOUT (%)
Change in VOUT (%)
2.5
VBIAS - VOUT (V)
-40°C
0.4
+125°C
+25°C
0.2
+25°C
0.2
0.1
0
-0.1
-0.2
+125°C
-0.3
0
-0.4
-0.2
-0.5
10
20
30
40
0.5
1.0
1.5
2.0
2.5
3.0
IOUT (mA)
IOUT (A)
Figure 5.
Figure 6.
VIN DROPOUT VOLTAGE vs
iOUT AND TEMPERATURE (TJ)
VIN DROPOUT VOLTAGE vs
VIN DROPOUT VOLTAGE vs IOUT AND TEMPERATURE (TJ)
180
400
160
350
IOUT = 3A
140
120
100
+125°C
80
60
+25°C
40
300
250
+125°C
200
150
100
+25°C
-40°C
20
50
-40°C
0
0
0
6
0
50
VDO (VIN - VOUT) (mV)
VDO (VIN - VOUT) (mV)
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
IOUT (A)
VBIAS - VOUT (V)
Figure 7.
Figure 8.
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3.5
4.0
4.5
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TYPICAL CHARACTERISTICS (continued)
At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 50mA, VEN = VIN, CIN = 1μF, CBIAS = 4.7μF, and COUT = 10μF,
unless otherwise noted.
VIN DROPOUT VOLTAGE vs
(VBIAS – VOUT) AND TEMPERATURE (TJ)
2200
200
IOUT = 0.5A
180
2000
160
VDO (VBIAS - VOUT) (mV)
VDO (VIN - VOUT) (mV)
VBIAS DROPOUT VOLTAGE vs
IOUT AND TEMPERATURE (TJ)
140
120
100
+25°C
80
+125°C
60
40
-40°C
1800
1600
+125°C
1400
1200
+25°C
1000
-40°C
800
20
600
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
0.5
1.0
VBIAS - VOUT (V)
Figure 9.
VBIAS PSRR vs FREQUENCY
2.5
3.0
VIN PSRR vs FREQUENCY
90
80
IOUT = 0.1A
IOUT = 1.5A
70
60
50
40
IOUT = 0.5A
30
VIN = 1.8V
VOUT = 1.2V
VBIAS = 5V
CSS = 1nF
20
10
0
10
Power-Supply Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
2.0
Figure 10.
90
80
70
IOUT = 100mA
60
IOUT = 500mA
50
40
30
20
VIN = 1.8V
VOUT = 1.2V
CSS = 1nF
10
0
100
1k
10k
100k
1M
10
10M
Figure 12.
1kHz
10kHz
50
40
500kHz
30
100kHz
20
10
0
0.25
0.50
0.75
1.00
1.25
1.50
IOUT = 300mA
100k
1M
10M
NOISE SPECTRAL DENSITY
60
0
10k
Figure 11.
1.75
2.00 2.25
Output Spectral Noise Density (mV/ÖHz)
70
1k
Frequency (Hz)
VOUT = 1.2V
IOUT = 1.5A
CSS = 1nF
80
100
IOUT = 1500mA
Frequency (Hz)
VIN PSRR vs (VIN – VOUT)
90
Power-Supply Rejection Ratio (dB)
1.5
IOUT (A)
1
IOUT = 100mA
VOUT = 1.2V
CSS = 0nF
0.1
CSS = 10nF
CSS = 1nF
0.01
100
VIN - VOUT (V)
1k
10k
100k
Frequency (Hz)
Figure 13.
Figure 14.
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TYPICAL CHARACTERISTICS (continued)
At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 50mA, VEN = VIN, CIN = 1μF, CBIAS = 4.7μF, and COUT = 10μF,
unless otherwise noted.
BIAS PIN CURRENT vs
IOUT AND TEMPERATURE (TJ)
BIAS PIN CURRENT vs
VBIAS AND TEMPERATURE (TJ)
2.0
2.0
1.8
1.8
+125°C
1.6
1.4
1.4
IBIAS (mA)
IBIAS (mA)
+125°C
1.6
1.2
1.0
0.8
-40°C
0.6
1.2
+25°C
1.0
0.8
0.6
+25°C
0.4
0.4
0.2
0.2
0
-40°C
0
0
0.5
1.0
1.5
2.0
2.5
2.0
3.0
3.0
3.5
4.0
IOUT (A)
VBIAS (V)
Figure 15.
Figure 16.
SOFT-START CHARGING CURRENT (ISS) vs
TEMPERATURE (TJ)
4.5
5.0
5.5
LOW-LEVEL PG VOLTAGE vs CURRENT
1.0
475
0.9
VOL Low-Level PG Voltage (V)
500
450
ISS (nA)
2.5
425
400
375
350
325
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
300
-50
-25
0
25
50
75
100
125
0
2
4
Junction Temperature (°C)
6
8
10
12
PG Current (mA)
Figure 17.
Figure 18.
CURRENT LIMIT vs (VBIAS – VOUT)
5.0
-40°C
4.5
Current Limit (A)
4.0
+125°C
3.5
3.0
+25°C
2.5
Drive capability of output FET limits
IOUT when VBIAS - VOUT is under 2.0V.
2.0
1.5
VOUT = 0.8V
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VBIAS - VOUT (V)
Figure 19.
8
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TYPICAL CHARACTERISTICS
At TJ = +25°C, VIN = VOUT(TYP) + 0.3V, VBIAS = 5V, IOUT = 1A, VEN = VIN = 1.8V, VOUT = 1.5V, CIN = 1μF, CBIAS = 4.7μF, and
COUT = 10μF, unless otherwise noted.
VBIAS LINE TRANSIENT
VIN LINE TRANSIENT
CSS = 1nF
COUT = 10mF (Ceramic)
COUT = 10mF (Ceramic)
100mV/div
100mV/div
COUT = 2.2mF (Ceramic)
100mV/div
CSS = 1nF
3.8V
5.0V
1V/div
1V/div
1V/ms
3.3V
1V/ms
1.8V
Time (50ms/div)
Time (50ms/div)
Figure 20.
Figure 21.
OUTPUT LOAD TRANSIENT RESPONSE
TURN-ON RESPONSE
COUT = 470mF (OSCON)
CSS = 0nF
100mV/div
COUT = 100mF (Ceramic)
CSS = 1nF
0.5V/div
100mV/div
VOUT
CSS = 2.2nF
COUT = 22mF (Ceramic)
100mV/div
1.2V
3A
2A/div
CSS = 1nF
1V/div
VEN
0V
1A/ms
50mA
Time (50ms/div)
Time (1ms/div)
Figure 22.
Figure 23.
POWER-UP/POWER-DOWN
VIN = VBIAS = VEN
1V/div
VPG (500mV/div)
VOUT
Time (20ms/div)
Figure 24.
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APPLICATION INFORMATION
The TPS749xx belongs to a family of low dropout
regulators that feature soft-start capabilities. These
regulators use a low current bias input to power all
internal control circuitry, allowing the NMOS pass
transistor to regulate very low input and output
voltages.
The use of an NMOS-pass FET offers several critical
advantages for many applications. Unlike a PMOS
topology device, the output capacitor has little effect
on loop stability. This architecture allows the
TPS749xx to be stable with any capacitor type of
value 2.2μF or greater. Transient response is also
superior to PMOS topologies, particularly for low VIN
applications.
The
TPS749xx
features
a
programmable
voltage-controlled soft-start circuit that provides a
smooth, monotonic start-up and limits startup inrush
currents that may be caused by large capacitive
loads. A power-good (PG) output is available to allow
supply monitoring and sequencing of other supplies.
An enable (EN) pin with hysteresis and deglitch
allows slow-ramping signals to be used for
sequencing the device. The low VIN and VOUT
capability allows for inexpensive, easy-to-design, and
efficient linear regulation between the multiple supply
voltages often present in processor intensive
systems.
Figure 25 illustrates the typical application circuit for
the TPS749xx adjustable output device.
R1 and R2 can be calculated for any output voltage
using the formula shown in Figure 25. Refer to
Table 1 for sample resistor values of common output
voltages. In order to achieve the maximum accuracy
specifications, R2 should be ≤ 4.99kΩ.
VIN
IN
CIN
1mF
PG
R3
BIAS
EN
VBIAS
TPS74901
R1
SS
CBIAS
1mF
VOUT
OUT
FB
GND
CSS
COUT
10mF
INPUT, OUTPUT, AND BIAS CAPACITOR
REQUIREMENTS
The device is designed to be stable for all available
types of and values of output capacitors ≥ 2.2μF. The
device is also stable with multiple capacitors in
parallel, which can be of any type or value.
The capacitance required on the IN and BIAS pin
strongly depends on the input supply source
impedance. To counteract any inductance in the
input, the minimum recommended capacitor for VIN
and VBIAS is 1μF. If VIN and VBIAS are connected to
the same supply, the recommended minimum
capacitor for VBIAS is 4.7μF. Good quality, low ESR
capacitors should be used on the input; ceramic X5R
and X7R capacitors are preferred. These capacitors
should be placed as close the pins as possible for
optimum performance.
TRANSIENT RESPONSE
The TPS749xx is designed to have excellent transient
response for most applications with a small amount of
output capacitance. In some cases, the transient
response may be limited by the transient response of
the input supply. This limitation is especially true in
applications where the difference between the input
and output is less than 300mV. In this case, adding
additional input capacitance improves the transient
response much more than just adding additional
output capacitance would do. With a solid input
supply, adding additional output capacitance reduces
undershoot and overshoot during a transient event;
refer to Figure TBD in the Typical Characteristics
section. Because the TPS749xx is stable with output
capacitors as low as 2.2μF, many applications may
need very little capacitance at the LDO output. For
these applications, local bypass capacitance for the
powered device may be sufficient to meet the
transient requirements of the application. This design
reduces the total solution cost by avoiding the need
to use expensive high-value capacitors at the LDO
output.
R2
(
VOUT = 0.8 ´ 1 +
R1
R2
)
Figure 25. Typical Application Circuit for the
TPS749xx (Adjustable)
10
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DROPOUT VOLTAGE
VIN
The TPS749xx offers very low dropout performance,
making it well-suited for high-current low VIN/low VOUT
applications. The low dropout of the TPS749xx allows
the device to be used in place of a DC/DC converter
and still achieve good efficiencies. This provides
designers with the power architecture for their
applications to achieve the smallest, simplest, and
lowest cost solution.
There are two different specifications for dropout
voltage with the TPS749xx. The first specification
(see Figure 26) is referred to as VIN Dropout and is
used when an external bias voltage is applied to
achieve low dropout. This specification assumes that
VBIAS is at least 3.25V (1) above VOUT, which is the
case for VBIAS when powered by a 5.0V rail with 5%
tolerance and with VOUT = 1.5V. If VBIAS is
higher than VOUT + 3.25V, VIN dropout is less than
specified (1).
BIAS
Reference
IN
VBIAS = 5V ±5%
VIN = 1.8V
VOUT = 1.5V
IOUT = 1.5A
Efficiency = 83%
OUT
VOUT
COUT
BIAS
Reference
IN
VBIAS = 3.3V ±5%
VIN = 3.3V ± 5V
VOUT = 1.5V
IOUT = 1.5A
Efficiency = 45%
OUT
VOUT
COUT
FB
Simplified Block Diagram
Figure 27. Typical Application of the TPS749xx
Without an Auxiliary Bias
PROGRAMMABLE SOFT-START
The TPS749xx features a programmable, monotonic,
voltage-controlled soft-start that is set with an
external capacitor (CSS). This feature is important for
many applications because it eliminates power-up
initialization problems when powering FPGAs, DSPs,
or other processors. The controlled voltage ramp of
the output also reduces peak inrush current during
start-up, minimizing start-up transient events to the
input power bus.
FB
Simplified Block Diagram
Figure 26. Typical Application of the TPS749xx
Using an Auxiliary Bias Rail
The second specification (shown in Figure 27) is
referred to as VBIAS Dropout and applied to
applications where IN and BIAS are tied together.
This option allows the device to be used in
applications where an auxiliary bias voltage is not
available or low dropout is not required. Dropout is
limited by BIAS in these applications because VBIAS
provides the gate drive to the pass FET; therefore,
VBIAS must be 1.75V above VOUT. Dropout is limited
by BIAS in these applications because VBIAS provides
the gate drive to the pass FET; therefore, VBIAS must
be 1.75V above VOUT. Because of this usage, IN and
BIAS tied together easily consume huge power. Pay
attention not to exceed the power rating of the IC
package.
(1)
3.25V is a test condition of this device and can be adjusted by
referring to Figure 8.
To achieve a linear and monotonic soft-start, the
TPS749xx error amplifier tracks the voltage ramp of
the external soft-start capacitor until the voltage
exceeds the internal reference. The soft-start ramp
time is dependent on the soft-start charging current
(ISS), soft-start capacitance (CSS), and the internal
reference voltage (VREF), and can be calculated using
Equation 1:
tSS =
(VREF x CSS)
ISS
(1)
If large output capacitors are used, the device current
limit (ICL) and the output capacitor may set the
start-up time. In this case, the start-up time is given
by Equation 2:
tSSCL =
(VOUT(NOM) x COUT)
ICL(MIN)
(2)
where:
VOUT(NOM) is the nominal set output voltage,
COUT is the output capacitance, and
ICL(MIN) is the minimum current limit for the device.
In applications where monotonic startup is required,
the soft-start time given by Equation 1 should be set
to be greater than Equation 2.
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The maximum recommended soft-start capacitor is
0.015μF. Larger soft-start capacitors can be used and
will not damage the device; however, the soft-start
capacitor discharge circuit may not be able to fully
discharge the soft-start capacitor when enabled.
Soft-start capacitors larger than 0.015μF could be a
problem in applications where the user needs to
rapidly pulse the enable pin and still requires the
device to soft-start from ground. CSS must be
low-leakage; X7R, X5R, or C0G dielectric materials
are preferred. Refer to Table 2 for suggested
soft-start capacitor values.
SEQUENCING REQUIREMENTS
VIN, VBIAS, and VEN can be sequenced in any order
without causing damage to the device. However, for
the soft-start function to work as intended, certain
sequencing rules must be applied. Connecting EN to
IN is acceptable for most applications as long as VIN
is greater than 1.1V and the ramp rate of VIN and
VBIAS is faster than the set soft-start ramp rate. If the
ramp rate of the input sources is slower than the set
soft-start time, the output tracks the slower supply
minus the dropout voltage until it reaches the set
output voltage. If EN is connected to BIAS, the device
will soft-start as programmed, provided that VIN is
present before VBIAS. If VBIAS and VEN are present
before VIN is applied and the set soft-start time has
expired, then VOUT tracks VIN. If the soft-start time has
not expired, the output tracks VIN until VOUT reaches
the value set by the charging soft-start capacitor.
Figure 28 shows the use of an RC-delay circuit to
hold off VEN until VBIAS has ramped. This technique
can also be used to drive EN from VIN. An external
control signal can also be used to enable the device
after VIN and VBIAS are present.
NOTE: When VBIAS and VEN are present and VIN is
not supplied, this device outputs approximately 50μA
of current from OUT. Although this condition will not
cause any damage to the device, the output current
may charge up the OUT node if total resistance
between OUT and GND (including external feedback
resistors) is less than 10kΩ.
VIN
IN
VOUT
OUT
R1
CIN
BIAS TPS74901
FB
EN
SS
COUT
R2
R
VBIAS
CBIAS
GND
C
CSS
Figure 28. Soft-Start Delay Using an RC Circuit on
Enable
12
OUTPUT NOISE
The TPS749xx provides low output noise when a
soft-start capacitor is used. When the device reaches
the end of the soft-start cycle, the soft-start capacitor
serves as a filter for the internal reference. By using a
0.001μF soft-start capacitor, the output noise is
reduced by half and is typically 30μVRMS for a 1.2V
output (10Hz to 100kHz). Further increasing CSS has
little effect on noise, Because most of the output
noise is generated by the internal reference, the
noise is a function of the set output voltage. The RMS
noise with a 0.001μF soft-start capacitor is given in
Equation 3.
VN(mVRMS) = 25
mVRMS
x VOUT(V)
V
(3)
The low output noise of the TPS749xx makes it a
good choice for powering transceivers, PLLs, or other
noise-sensitive circuitry.
ENABLE/SHUTDOWN
The enable (EN) pin is active high and is compatible
with standard digital signaling levels. VEN below 0.4V
turns the regulator off, while VEN above 1.1V turns the
regulator on. Unlike many regulators, the enable
circuitry has hysteresis and deglitching for use with
relatively slowly ramping analog signals. This
configuration allows the TPS749xx to be enabled by
connecting the output of another supply to the EN
pin. The enable circuitry typically has 50mV of
hysteresis and a deglitch circuit to help avoid on-off
cycling because of small glitches in the VEN signal.
The enable threshold is typically 0.8V and varies with
temperature and process variations. Temperature
variation is approximately –1mV/°C; process variation
accounts for most of the rest of the variation to the
0.4V and 1.1V limits. If precise turn-on timing is
required, a fast rise-time signal must be used to
enable the TPS749xx.
If not used, EN can be connected to either IN or
BIAS. If EN is connected to IN, it should be
connected as close as possible to the largest
capacitance on the input to prevent voltage droops on
that line from triggering the enable circuit.
POWER-GOOD
The power-good (PG) pin is an open-drain output and
can be connected to any 5.5V or lower rail through an
external pull-up resistor. This pin requires at least
1.1V on VBIAS in order to have a valid output. The PG
output is high-impedance when VOUT is greater than
VIT + VHYS. If VOUT drops below VIT or if VBIAS drops
below 1.9V, the open-drain output turns on and pulls
the PG output low. The PG pin also asserts when the
device is disabled. The recommended operating
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condition of PG pin sink current is up to 1mA, so the
pull-up resistor for PG should be in the range of 10kΩ
to 1MΩ. PG is only provided on the QFN package. If
output voltage monitoring is not needed, the PG pin
can be left floating.
INTERNAL CURRENT LIMIT
The TPS749xx features a factory-trimmed, accurate
current limit that is flat over temperature and supply
voltage. The current limit allows the device to supply
surges of up to 4A and maintain regulation. The
current limit responds in about 10μs to reduce the
current during a short-circuit fault.
The internal current limit protection circuitry of the
TPS749xx is designed to protect against overload
conditions. It is not intended to allow operation above
the rated current of the device. Continuously running
the TPS749xx above the rated current degrades
device reliability.
THERMAL PROTECTION
Thermal protection disables the output when the
junction temperature rises to approximately +160°C,
allowing the device to cool. When the junction
temperature cools to approximately +140°C, the
output circuitry is enabled. Depending on power
dissipation, thermal resistance, and ambient
temperature the thermal protection circuit may cycle
on and off. This cycling limits the dissipation of the
regulator, protecting it from damage as a result of
overheating.
Activation of the thermal protection circuit indicates
excessive
power
dissipation
or
inadequate
heatsinking.
For
reliable
operation,
junction
temperature should be limited to +125°C maximum.
To estimate the margin of safety in a complete design
(including
heatsink),
increase
the
ambient
temperature until thermal protection is triggered; use
worst-case loads and signal conditions. For good
reliability, thermal protection should trigger at least
+40°C above the maximum expected ambient
condition of the application. This condition produces a
worst-case junction temperature of +125°C at the
highest
expected
ambient
temperature
and
worst-case load.
The internal protection circuitry of the TPS749xx is
designed to protect against overload conditions. It is
not intended to replace proper heatsinking.
Continuously running the TPS749xx into thermal
shutdown degrades device reliability.
LAYOUT RECOMMENDATIONS AND POWER
DISSIPATION
An optimal layout can greatly improve transient
performance, PSRR, and noise. To minimize the
voltage drop on the input of the device during load
transients, the capacitance on IN and BIAS should be
connected as close as possible to the device. This
capacitance also minimizes the effects of parasitic
inductance and resistance of the input source and
can therefore improve stability. To achieve optimal
transient performance and accuracy, the top side of
R1 in Figure 25 should be connected as close as
possible to the load. If BIAS is connected to IN it is
recommended to connect BIAS as close to the sense
point of the input supply as possible. This connection
minimizes the voltage droop on BIAS during transient
conditions and can improve the turn-on response.
Knowing the device power dissipation and proper
sizing of the thermal plane that is connected to the
tab or pad is critical to avoiding thermal shutdown
and ensuring reliable operation. Power dissipation of
the device depends on input voltage and load
conditions and can be calculated using Equation 4:
PD = (VIN - VOUT) x IOUT
(4)
Power dissipation can be minimized and greater
efficiency can be achieved by using the lowest
possible input voltage necessary to achieve the
required output voltage regulation.
On both the QFN (RGW) and DDPAK (KTW)
packages, the primary conduction path for heat is
through the exposed pad or tab to the printed circuit
board (PCB). The pad or tab can be connected to
ground or be left floating; however, it should be
attached to an appropriate amount of copper PCB
area to ensure the device will not overheat. The
maximum junction to ambient thermal resistance
depends on the maximum ambient temperature,
maximum device junction temperature, and power
dissipation of the device and can be calculated using
Equation 5:
RqJA =
(+125°C - TA)
PD
(5)
Knowing the maximum RθJA, and system air flow the
minimum amount of PCB copper area needed for
appropriate heatsinking can be calculated using
Figure 29 through Figure 31.
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PCB Top View
PCB Cross Section
TJ
RqJC
TC
RqCS
0.062in.
TS
RqSA
4-layer. 0.062” FR4
Vias are 0.012” diameter, plated
Top/Bottom layers are 2 oz. copper
Inner layers are 1 oz. copper
0.5in
TA
1.0in
RqJA = RqJC + RqCS + RqSA
2.0in
2
2
2
55
50
0 LFM
qJA (°C/W)
45
40
150 LFM
35
250 LFM
30
25
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2
Area (in )
Figure 29. RGW (5 x 5 QFN) PCB Layout and Corresponding RθJA Data, Buried Thermal Plane, No Vias
Under Thermal Pad
14
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PCB Top View
PCB Cross Section
TJ
RqJC
TC
RqCS
0.062in.
TS
0.5in
RqSA
4-layer. 0.062” FR4
Vias are 0.012” diameter, plated
Top/Bottom layers are 2 oz. copper
Inner layers are 1 oz. copper
1.0in
TA
2.0in
2
2
2
RqJA = RqJC + RqCS + RqSA
50
45
0 LFM
qJA (°C/W)
40
150 LFM
35
30
250 LFM
25
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
Area (in )
Figure 30. RGW (5 x 5 QFN) PCB Layout and Corresponding RθJA Data, Buried Thermal Plane, Vias Under
Thermal Pad
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SBVS082B – JUNE 2007 – REVISED OCTOBER 2007
PCB Top View
PCB Cross Section
TJ
RqJC
TC
RqCS
0.062in.
TS
4-layer. 0.062” FR4
Vias are 0.012” diameter, plated
Top/Bottom layers are 2 oz. copper
Inner layers are 1 oz. copper
RqSA
0.5in
TA
1.0in
2.0in
2
2
2
RqJA = RqJC + RqCS + RqSA
90
80
qJA (°C/W)
70
0 LFM
60
150 LFM
50
40
250 LFM
30
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
Area (in )
Figure 31. RGW (5 x 5 QFN) PCB Layout and Corresponding RθJA Data, Top Layer Thermal Plane
16
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PCB Top View
PCB Cross Section
2.0in
2
TJ
RqJC
1.0in
2
TC
0.5in
RqCS
0.062in.
2
TS
RqSA
4-layer. 0.062” FR4
Vias are 0.012” diameter, plated
Top/Bottom layers are 2 oz. copper
Inner layers are 1 oz. copper
TA
RqJA = RqJC + RqCS + RqSA
35
0 LFM
qJA (°C/W)
30
25
20
15
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2
Area (in )
Figure 32. KTW (DDPAK-7) PCB Layout and Corresponding RθJA, Buried Thermal Plane
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PCB Top View
PCB Cross Section
2.0in
2
TJ
1.0in
RqJC
TC
2
0.5in
2
RqCS
0.062in.
TS
RqSA
4-layer. 0.062” FR4
Vias are 0.012” diameter, plated
Top/Bottom layers are 2 oz. copper
Inner layers are 1 oz. copper
TA
RqJA = RqJC + RqCS + RqSA
55
50
45
qJA (°C/W)
40
35
30
0 LFM
25
20
15
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2
Area (in )
Figure 33. KTW (DDPAK-7) PCB Layout and Corresponding RθJA, Top Layer Thermal Plane
18
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PACKAGE OPTION ADDENDUM
www.ti.com
20-Sep-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS74901KTWR
ACTIVE
DDPAK
KTW
7
500
Green (RoHS &
no Sb/Br)
CU SN
Level-2-260C-1 YEAR
TPS74901KTWRG3
ACTIVE
DDPAK
KTW
7
500
Green (RoHS &
no Sb/Br)
CU SN
Level-2-260C-1 YEAR
TPS74901KTWT
ACTIVE
DDPAK
KTW
7
50
Green (RoHS &
no Sb/Br)
CU SN
Level-2-260C-1 YEAR
TPS74901KTWTG3
ACTIVE
DDPAK
KTW
7
50
Green (RoHS &
no Sb/Br)
CU SN
Level-2-260C-1 YEAR
TPS74901RGWR
ACTIVE
QFN
RGW
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS74901RGWRG4
ACTIVE
QFN
RGW
20
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS74901RGWT
ACTIVE
QFN
RGW
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TPS74901RGWTG4
ACTIVE
QFN
RGW
20
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
TPS74901KTWR
DDPAK
KTW
7
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
500
330.0
24.4
10.6
15.6
4.9
16.0
24.0
Q2
TPS74901KTWT
DDPAK
KTW
7
50
330.0
24.4
10.6
15.6
4.9
16.0
24.0
Q2
TPS74901RGWR
QFN
RGW
20
3000
330.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
TPS74901RGWT
QFN
RGW
20
250
180.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS74901KTWR
DDPAK
KTW
7
500
346.0
346.0
41.0
TPS74901KTWT
DDPAK
KTW
7
50
346.0
346.0
41.0
TPS74901RGWR
QFN
RGW
20
3000
346.0
346.0
29.0
TPS74901RGWT
QFN
RGW
20
250
190.5
212.7
31.8
Pack Materials-Page 2
MECHANICAL DATA
MPSF015 – AUGUST 2001
KTW (R-PSFM-G7)
PLASTIC FLANGE-MOUNT
0.410 (10,41)
0.385 (9,78)
0.304 (7,72)
–A–
0.006
–B–
0.303 (7,70)
0.297 (7,54)
0.0625 (1,587) H
0.055 (1,40)
0.0585 (1,485)
0.300 (7,62)
0.064 (1,63)
0.045 (1,14)
0.252 (6,40)
0.056 (1,42)
0.187 (4,75)
0.370 (9,40)
0.179 (4,55)
0.330 (8,38)
H
0.296 (7,52)
A
0.605 (15,37)
0.595 (15,11)
0.012 (0,305)
C
0.000 (0,00)
0.019 (0,48)
0.104 (2,64)
0.096 (2,44)
H
0.017 (0,43)
0.050 (1,27)
C
C
F
0.034 (0,86)
0.022 (0,57)
0.010 (0,25) M
B
0.026 (0,66)
0.014 (0,36)
0°~3°
AM C M
0.183 (4,65)
0.170 (4,32)
4201284/A 08/01
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Lead width and height dimensions apply to the
plated lead.
D. Leads are not allowed above the Datum B.
E. Stand–off height is measured from lead tip
with reference to Datum B.
F. Lead width dimension does not include dambar
protrusion. Allowable dambar protrusion shall not
cause the lead width to exceed the maximum
dimension by more than 0.003”.
G. Cross–hatch indicates exposed metal surface.
H. Falls within JEDEC MO–169 with the exception
of the dimensions indicated.
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