TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V (D−S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35 0.53 1 0 to 3 1.0 3.0 0 APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23) G 1 S 2 TO-226AA (TO-92) 3 S 1 G 2 “S” TN 0201KL xxyy 3 “S” = Siliconix Logo xxyy = Date Code Device Marking Front View D D Top View TN0201K Top View Marking Code: K3ywl TN0201KL K3 = Part Number Code for TN0201K y = Year Code w = Week Code l = Lot Traceability Ordering Information: TN0201K-T1—E3 (Lead Free) Ordering Information: TN0201KL-TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Limit Parameter Symbol TN0201K TN0201KL Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 70_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 70_C PD RthJA TJ, Tstg V 0.42 0.64 0.33 0.51 0.8 1.5 0.35 0.8 0.22 0.51 357 156 −55 to 150 Unit A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 72671 S-40245—Rev. A, 16-Feb-04 www.vishay.com 1 TN0201K/TN0201KL Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 10 mA 20 VGS(th) VDS = VGS, ID = 0.25 mA 1.0 2.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55_C 10 On State Drain Currenta On-State ID(on) D( ) Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea VDS = 10 V V, VGS = 10 V Diode Forward Voltage 0.5 TN0201KL 0.8 nA mA A VGS = 4.5 V, ID = 0.1 A 0.8 1.4 VGS = 10 V, ID = 0.3 A 0.47 1.0 gfs VDS = 10 V, ID = 0.3 A 550 VSD IS = 0.3 A, VGS = 0 V 0.85 1.2 1000 1500 rDS(on) Forward Transconductancea TN0201K V W mS V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 200 Gate Resistance Rg 48 VDS = 16 V, VGS = 10 V ID ^ 0.3 A 205 td(on) Turn On Time Turn-On VDD = 15 V, RL = 50 W ID ^ 0.3 03A A, VGEN = 10 V RG = 6 W tr td(off) Turn-Off Time tf pC W 4.5 8 8 15 9 15 6.3 12 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 1.0 0.8 VGS = 10 thru 5 V 0.7 4V 0.8 I D − Drain Current (A) I D − Drain Current (A) 0.6 0.5 0.4 0.3 0.2 3V 0.6 0.4 TJ = 125_C 0.2 0.1 0.0 0.0 25_C 2V 0.4 0.8 1.2 1.6 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 −55_C 0.0 2.0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72671 S-40245—Rev. A, 16-Feb-04 TN0201K/TN0201KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 50 1.2 40 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 1.5 VGS = 4.5 V 0.9 VGS = 10 V 0.6 0.3 0.0 0.0 Ciss 30 Coss 20 Crss 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 4 ID − Drain Current (A) Gate Charge 20 On-Resistance vs. Junction Temperature VDS = 16 V ID = 0.3 A r DS(on) − On-Resistance ( W) (Normalized) V GS − Gate-to-Source Voltage (V) 16 1.6 8 6 4 2 VGS = 10 V ID = 0.3 A 1.4 1.2 VGS = 4.5 V ID = 0.1 A 1.0 0.8 0 0.0 0.2 0.4 0.6 0.8 0.6 −50 1.0 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 3 1 TJ = 150_C r DS(on) − On-Resistance ( W ) I S − Source Current (A) 12 VDS − Drain-to-Source Voltage (V) 10 0.1 0.01 0.001 0.0 8 TJ = 25_C 2.0 1.6 ID = 0.3 A 1.2 0.8 0.4 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72671 S-40245—Rev. A, 16-Feb-04 1.2 1.4 0 4 8 12 16 20 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 TN0201K/TN0201KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 V GS(th) Variance (V) 0.2 ID = 250 mA −0.0 −0.2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 150 TJ − Temperature (_C) Safe Operating Area (TO-236, TN0201K Only) Safe Operating Area (TO-226AA, TN0201KL Only) 10 10 IDM Limited rDS(on) Limited rDS(on) Limited 10 ms 0.1 ID(on) Limited 100 ms 1s 10 s dc TA = 25_C Single Pulse 0.01 BVDSS Limited 0.001 0.1 1 1 ms 1 1 ms I D − Drain Current (A) I D − Drain Current (A) 1 IDM Limited 0.1 0.01 10 ms ID(on) Limited 10 100 1s dc TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 VDS − Drain-to-Source Voltage (V) 100 ms 10 s 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN0201K Only) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72671 S-40245—Rev. A, 16-Feb-04 TN0201K/TN0201KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN0201KL Only) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72671 S-40245—Rev. A, 16-Feb-04 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 5