2SK3746 Ordering number : EN8283A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3746 High-Voltage, High-Speed Switching Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability (Adoption of HVP process) Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) ID IDP Allowable Power Dissipation PD PW≤10μs, duty cycle≤1% Tc=25°C Unit 1500 V ±20 V 2 A 4 A 2.5 W 110 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 41 mJ 2 A Avalanche Current *2 *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7539-002 • Package : TO-3P-3L • JEITA, JEDEC : SC-65, TO-247, SOT-199 • Minimum Packing Quantity : 30 pcs./magazine 2SK3746-1E 4.8 15.6 5.0 1.5 Marking 7.0 3.2 Electrical Connection 16.76 10.0 13.6 3.5 18.4 19.9 2 K3746 LOT No. 1.0 20.0 1 2.0 3.0 0.6 3 2 3 1.4 1 5.45 1 : Gate 2 : Drain 3 : Source 5.45 SANYO : TO-3P-3L http://semicon.sanyo.com/en/network 52312 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7 2SK3746 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Ratings Conditions min typ 1500 ID=1mA, VGS=0V VDS=1200V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=16V, VDS=0V VDS=10V, ID=1mA 2.5 Forward Transfer Admittance | yfs | VDS=20V, ID=1A 0.7 Static Drain-to-Source On-State Resistance RDS(on) ID=1A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD r507 RG μA ±10 μA 1.4 See Fig.2 IS=2A, VGS=0V V S 10 VDS=200V, VGS=10V, ID=2A 13 Ω 380 pF 70 pF 40 pF 12 ns 37 ns 152 ns 59 ns 37.5 nC 2.7 nC 20 nC 0.88 1.2 V Fig.2 Switching Time Test Circuit L 10V 0V VIN VDD=200V ID=1A RL=200Ω 2SK3746 VDD 507 100 3.5 VIN 10V 0V Unit V VDS=30V, f=1MHz Fig.1 Avalanche Resistance Test Circuit max VOUT D PW=10μs D.C.≤0.5% G 2SK3746 P.G RGS=50Ω S Ordering Information Device 2SK3746-1E Package Shipping memo TO-3P-3L 30pcs./magazine Pb Free No.8283-2/7 2SK3746 ID -- VDS 4.0 8V 2.5 6V 2.0 1.5 5V 1.0 VDS=20V pulse Tc= --25°C 2.5 10V 3.0 Drain Current, ID -- A Drain Current, ID -- A 3.5 ID -- VGS 3.0 Tc=25°C pulse 2.0 25°C 1.5 75°C 1.0 0.5 0.5 VGS=4V 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 Tc=75°C 25°C --25°C 5 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V | yfs | -- ID °C 25 1.0 5°C --2 = °C Tc 75 3 2 0.1 5 7 2 0.1 3 5 7 Drain Current, ID -- A --25 0 75 100 125 150 IT09034 VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 IT09036 Ciss, Coss, Crss -- VDS f=1MHz 2 Ciss, Coss, Crss -- pF 5 tr 2 1000 7 5 Ciss 3 2 Co ss 100 7 5 Crss 3 2 td(on) 10 0.1 50 3 tf 3 25 IS -- VSD 5 100 7 20 IT09032 5 Diode Forward Voltage, VSD -- V td(off) 2 18 10 IT09035 VDD=200V VGS=10V 3 16 15 0.01 0.2 3 SW Time -- ID 5 Switching Time, SW Time -- ns 2 1.0 14 20 3 2 3 12 25 10 7 5 2 10 Case Temperature, Tc -- °C 3 5 8 ID=1A VGS=10V IT09033 VDS=20V 7 6 RDS(on) -- Tc 0 --50 20 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 18 4 30 25 10 2 Gate-to-Source Voltage, VGS -- V ID=1A 15 0 IT09031 RDS(on) -- VGS 30 0 0 50 --25°C 10 5°C 25°C 5 Tc= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0 2 3 5 7 1.0 Drain Current, ID -- A 2 3 IT09037 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT09038 No.8283-3/7 2SK3746 VGS -- Qg 10 VDS=200V ID=2A 3 ID=2A 2 7 4 3 2 1.0 7 5 10 10m 0m s s s n io at er 5 0μ s op 6 10 1m C Drain Current, ID -- A 8 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 Tc=25°C Single pulse 2 1 0 10 0 20 30 Total Gate Charge, Qg -- nC 0.01 1.0 40 2 3 5 7 10 Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 5 7 100 2 3 5 71000 2 3 IT16891 PD -- Tc 120 2.5 2 3 Drain-to-Source Voltage, VDS -- V IT09039 PD -- Ta 3.0 Allowable Power Dissipation, PD -- W IDP=4A(PW≤10μs) D Gate-to-Source Voltage, VGS -- V 9 ASO 7 5 110 100 80 60 40 20 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09041 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09042 No.8283-4/7 2SK3746 Magazine Specification 2SK3746-1E No.8283-5/7 2SK3746 Outline Drawing 2SK3746-1E Mass (g) Unit 1.8 mm * For reference No.8283-6/7 2SK3746 Note on usage : Since the 2SK3746 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No.8283-7/7