5LN01SP Ordering number : EN6559A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN01SP Ultrahigh-Speed Switching Applications Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 50 V ±10 V 0.1 A 0.4 A 0.25 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation PW≤10μs, duty cycle≤1% This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7524-007 • Package : SPA • JEITA, JEDEC : SC-72 • Minimum Packing Quantity : 2,500 pcs./box, 500 pcs./bag 5LN01SP 5LN01SP-AC 2.2 1.8 3.0 4.0 Marking Electrical Connection YB 0.4 0.5 3 0.6 LOT No. 15.0 0.4 1 2 2 0.7 0.7 3.0 3.8 1 3 1.3 1.3 0.4 1 : Source 2 : Drain 3 : Gate SANYO : SPA http://www.sanyosemi.com/en/network/ N2112 TKIM/82200 TS IM TA-2046 No.6559-1/10 5LN01SP Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=50V, VGS=0V 50 IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=50mA 0.13 RDS(on)1 ID=50mA, VGS=4V 6 7.8 Ω RDS(on)2 ID=30mA, VGS=2.5V 7.1 9.9 Ω RDS(on)3 ID=10mA, VGS=1.5V 10 20 Ciss V 10 μA ±10 μA 1.3 0.18 V S Ω 6.6 pF Output Capacitance Coss 4.7 pF Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time td(on) tr 18 ns 42 ns 190 ns Rise Time Turn-OFF Delay Time VDS=10V, f=1MHz Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=10V, ID=100mA 105 ns 1.57 nC 0.20 nC 0.32 IS=100mA, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=25V VIN ID=50mA RL=500Ω VOUT VIN PW=10μs D.C.≤1% D G 5LN01SP P.G 50Ω S Ordering Information Package Shipping 5LN01SP Device SPA 500pcs./bag 5LN01SP-AC SPA 2,500pcs./box memo Pb Free No.6559-2/10 5LN01SP ID -- VDS VDS=10V 6.0 V VGS=1.5V 0.05 0.04 0.03 0.12 C 0.10 0.08 0.06 0.02 0.04 0.01 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain-to-Source Voltage, VDS -- V 0 0.5 1.0 1.5 2.0 VGS=4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 9 50mA 8 ID=30mA 7 6 5 4 3.0 IT00055 RDS(on) -- ID 100 Ta=25°C 11 2.5 Gate-to-Source Voltage, VGS -- V IT00054 RDS(on) -- VGS 12 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.14 75° C Drain Current, ID -- A 0.16 0.07 0.06 Ta= --25° C 0.18 25° 5V V 2.0 2. 4.0V 0.08 Drain Current, ID -- A 3 .0 3.5V 0.09 ID -- VGS 0.20 V 0.10 5 3 2 10 Ta=75°C 25°C --25°C 7 5 3 2 3 1.0 0.01 2 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2 Ta=75°C 7 --25°C 25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 Drain Current, ID -- A 0 8 =3 ID 0V VG A, 4. S= m 50 I D= 6 4 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00060 3 IT00057 3 2 Ta=75°C 10 7 --25°C 5 25°C 3 2 2 3 5 7 0.01 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S .5V 2 VGS=1.5V | yfs | -- ID 1.0 2 S= , VG mA 0.1 RDS(on) -- ID IT00058 12 10 7 5 1.0 0.001 3 RDS(on) -- Ta 14 5 7 3 5 3 Drain Current, ID -- A 100 5 10 2 IT00056 VGS=2.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 RDS(on) -- ID 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 2 3 IT00059 VDS=10V 7 5 3 25°C Ta= -- 2 25°C 75°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 IT00061 No.6559-3/10 5LN01SP IF -- VSD 3 Switching Time, SW Time -- ns 5 3 --25 °C Ta= 75° C 25° C Forward Current, IF -- A 0.1 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V tf 100 7 2 10 Ciss 5 Coss 3 2 Crss 3 5 10 15 20 25 30 td(on) 2 2 3 5 7 10 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA 8 7 6 5 4 3 2 1 1.0 0 tr 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF 3 7 td(off) 2 9 5 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT00064 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 1.8 IT00065 PD -- Ta 0.3 Allowable Power Dissipation, PD -- W 3 IT00062 f=1MHz 7 5 10 0.01 1.1 Ciss, Coss, Crss -- VDS 100 VDD=25V VGS=4V 7 2 7 SW Time -- ID 1000 VGS=0 0.25 0.2 0.15 0.1 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02005 No.6559-4/10 5LN01SP Taping Specification 5LN01SP-AC No.6559-5/10 5LN01SP No.6559-6/10 5LN01SP Outline Drawing 5LN01SP-AC Mass (g) Unit 0.13 mm * For reference No.6559-7/10 5LN01SP Bag Packing Specification 5LN01SP No.6559-8/10 5LN01SP Outline Drawing 5LN01SP Mass (g) Unit 0.13 mm * For reference No.6559-9/10 5LN01SP Note on usage : Since the 5LN01SP is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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