SANYO EN6559A

5LN01SP
Ordering number : EN6559A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
5LN01SP
Ultrahigh-Speed Switching
Applications
Features
•
•
•
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Unit
50
V
±10
V
0.1
A
0.4
A
0.25
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Package Dimensions
Product & Package Information
unit : mm (typ)
7524-007
• Package
: SPA
• JEITA, JEDEC
: SC-72
• Minimum Packing Quantity : 2,500 pcs./box, 500 pcs./bag
5LN01SP
5LN01SP-AC
2.2
1.8
3.0
4.0
Marking
Electrical Connection
YB
0.4
0.5
3
0.6
LOT No.
15.0
0.4
1
2
2
0.7
0.7
3.0
3.8
1
3
1.3
1.3
0.4
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
http://www.sanyosemi.com/en/network/
N2112 TKIM/82200 TS IM TA-2046 No.6559-1/10
5LN01SP
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=50V, VGS=0V
50
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
0.4
VDS=10V, ID=50mA
0.13
RDS(on)1
ID=50mA, VGS=4V
6
7.8
Ω
RDS(on)2
ID=30mA, VGS=2.5V
7.1
9.9
Ω
RDS(on)3
ID=10mA, VGS=1.5V
10
20
Ciss
V
10
μA
±10
μA
1.3
0.18
V
S
Ω
6.6
pF
Output Capacitance
Coss
4.7
pF
Reverse Transfer Capacitance
Crss
1.7
pF
Turn-ON Delay Time
td(on)
tr
18
ns
42
ns
190
ns
Rise Time
Turn-OFF Delay Time
VDS=10V, f=1MHz
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=10V, VGS=10V, ID=100mA
105
ns
1.57
nC
0.20
nC
0.32
IS=100mA, VGS=0V
0.85
nC
1.2
V
Switching Time Test Circuit
4V
0V
VDD=25V
VIN
ID=50mA
RL=500Ω
VOUT
VIN
PW=10μs
D.C.≤1%
D
G
5LN01SP
P.G
50Ω
S
Ordering Information
Package
Shipping
5LN01SP
Device
SPA
500pcs./bag
5LN01SP-AC
SPA
2,500pcs./box
memo
Pb Free
No.6559-2/10
5LN01SP
ID -- VDS
VDS=10V
6.0
V
VGS=1.5V
0.05
0.04
0.03
0.12
C
0.10
0.08
0.06
0.02
0.04
0.01
0.02
0
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V
0
0.5
1.0
1.5
2.0
VGS=4V
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
10
9
50mA
8
ID=30mA
7
6
5
4
3.0
IT00055
RDS(on) -- ID
100
Ta=25°C
11
2.5
Gate-to-Source Voltage, VGS -- V
IT00054
RDS(on) -- VGS
12
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0.14
75°
C
Drain Current, ID -- A
0.16
0.07
0.06
Ta=
--25°
C
0.18
25°
5V
V
2.0
2.
4.0V
0.08
Drain Current, ID -- A
3 .0
3.5V
0.09
ID -- VGS
0.20
V
0.10
5
3
2
10
Ta=75°C
25°C
--25°C
7
5
3
2
3
1.0
0.01
2
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
2
Ta=75°C
7
--25°C
25°C
3
2
1.0
0.01
2
3
5
7
2
0.1
Drain Current, ID -- A
0
8
=3
ID
0V
VG
A,
4.
S=
m
50
I D=
6
4
2
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT00060
3
IT00057
3
2
Ta=75°C
10
7
--25°C
5
25°C
3
2
2
3
5
7
0.01
Drain Current, ID -- A
Forward Transfer Admittance, | yfs | -- S
.5V
2
VGS=1.5V
| yfs | -- ID
1.0
2
S=
, VG
mA
0.1
RDS(on) -- ID
IT00058
12
10
7
5
1.0
0.001
3
RDS(on) -- Ta
14
5
7
3
5
3
Drain Current, ID -- A
100
5
10
2
IT00056
VGS=2.5V
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
10
RDS(on) -- ID
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
9
2
3
IT00059
VDS=10V
7
5
3
25°C
Ta= --
2
25°C
75°C
0.1
7
5
3
2
0.01
0.01
2
3
5
7
0.1
Drain Current, ID -- A
2
3
IT00061
No.6559-3/10
5LN01SP
IF -- VSD
3
Switching Time, SW Time -- ns
5
3
--25
°C
Ta=
75°
C
25°
C
Forward Current, IF -- A
0.1
2
0.01
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V
tf
100
7
2
10
Ciss
5
Coss
3
2
Crss
3
5
10
15
20
25
30
td(on)
2
2
3
5
7
10
0.1
IT00063
VGS -- Qg
VDS=10V
ID=100mA
8
7
6
5
4
3
2
1
1.0
0
tr
5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Ciss, Coss, Crss -- pF
3
7
td(off)
2
9
5
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT00064
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
1.8
IT00065
PD -- Ta
0.3
Allowable Power Dissipation, PD -- W
3
IT00062
f=1MHz
7
5
10
0.01
1.1
Ciss, Coss, Crss -- VDS
100
VDD=25V
VGS=4V
7
2
7
SW Time -- ID
1000
VGS=0
0.25
0.2
0.15
0.1
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02005
No.6559-4/10
5LN01SP
Taping Specification
5LN01SP-AC
No.6559-5/10
5LN01SP
No.6559-6/10
5LN01SP
Outline Drawing
5LN01SP-AC
Mass (g) Unit
0.13
mm
* For reference
No.6559-7/10
5LN01SP
Bag Packing Specification
5LN01SP
No.6559-8/10
5LN01SP
Outline Drawing
5LN01SP
Mass (g) Unit
0.13
mm
* For reference
No.6559-9/10
5LN01SP
Note on usage : Since the 5LN01SP is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
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independent device, the customer should always evaluate and test devices mounted in the customer' s
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of November, 2012. Specifications and information herein are subject
to change without notice.
PS No.6559-10/10