3LP01SS Ordering number : EN6648B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP01SS General-Purpose Switching Device Applications Features • • • Low ON-resistance High-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±10 V Allowable Power Dissipation ID IDP PD 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.1 A --0.4 A This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7029A-003 • Package : SSFP • JEITA, JEDEC : SC-81 • Minimum Packing Quantity : 8,000 pcs./reel 3LP01SS-TL-E 3LP01SS-TL-H 1.4 0.1 3 Packing Type: TL Marking 2 0.45 TL 0.2 Electrical Connection 0.6 0.07 XA LOT No. 1 LOT No. 0.3 0.8 0 to 0.02 0.07 1.4 0.3 0.25 1 2 3 3 1 : Gate 2 : Source 3 : Drain SANYO : SSFP 1 2 http://semicon.sanyo.com/en/network 62712 TKIM/32406PE MSIM TB-00002156/92500 TSIM TA-1981 No.6648-1/7 3LP01SS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID= --1mA, VGS=0V VDS= --30V, VGS=0V VGS=±8V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID= --50mA, VGS= --4V ID= --30mA, VGS= --2.5V ID= --1mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings min typ max --30 VDS= --10V, ID= --100μA VDS= --10V, ID= --50mA V --0.4 80 VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --100mA --1 μA ±10 μA --1.4 110 V mS 8 10.4 Ω 11 15.4 Ω 27 54 Ω 7.5 pF 5.7 pF 1.8 pF 24 ns 55 ns 120 ns 130 ns 1.43 nC 0.18 nC 0.25 IS= --100mA, VGS=0V Unit --0.83 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --15V VIN VIN PW=10μs D.C.≤1% D ID= --50mA RL=300Ω VOUT G 3LP01SS P.G 50Ω S Ordering Information Package Shipping memo 3LP01SS-TL-E Device SSFP 8,000pcs./reel Pb Free 3LP01SS-TL-H SSFP 8,000pcs./reel Pb Free and Halogen Free No.6648-2/7 3LP01SS ID -- VDS --0.18 V .5 --0.16 --6.0 --0.07 --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 --0.10 --0.08 --0.06 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 15 --50mA ID= --30mA 5 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C Ta=75°C 10 7 --25°C 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A , mA 12 -I D= 10 V 30 A, m --50 I D= 8 4.0 = -V GS 6 4 2 --60 --40 --20 0 20 40 60 80 --25°C 5 3 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 5 7 160 IT00083 2 --0.1 3 IT00080 RDS(on) -- ID VGS= --1.5V 5 3 2 100 7 5 25°C Ta=75°C 3 2 --25°C 2 3 5 7 2 --1.0 Drain Current, ID -- mA Forward Transfer Admittance, | yfs | -- S V 2.5 = -V GS 7 3 IT00082 | yfs | -- ID 1.0 16 14 25°C Ta=75°C 10 IT00081 RDS(on) -- Ta 18 2 10 --0.1 3 --4.0 IT00078 3 7 3 --3.5 Drain Current, ID -- A VGS= --2.5V 5 2 --3.0 VGS= --4V 1000 7 --2.5 RDS(on) -- ID IT00079 RDS(on) -- ID 100 --2.0 5 1.0 --0.01 0 --1 --1.5 7 25 0 --1.0 100 Ta=25°C 10 --0.5 Gate-to-Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.12 --0.02 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.14 --0.04 --0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C --25 °C V --2.0V Ta= --2 75° C --3 .0V --4 . --0.08 Drain Current, ID -- A VDS= --10V 0V --3.5V --0.09 ID -- VGS --0.20 Drain Current, ID -- A --0.10 VDS= --10V 7 5 3 25°C 2 0.1 5°C 2 Ta= -- 75°C 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00084 No.6648-3/7 3LP01SS IS -- VSD 3 Switching Time, SW Time -- ns 5 --0.01 --0.5 --0.6 --0.7 --25°C 2 25°C 3 Ta=7 5°C --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 3 2 10 Ciss Coss 5 3 2 Crss 3 5 7 Drain Current, ID -- A --0.1 IT00086 VGS -- Qg VDS= --10V ID= --0.1A --9 7 2 --10 5 Ciss, Coss, Crss -- pF tf 2 f=1MHz 7 --8 --7 --6 --5 --4 --3 --2 --1 1.0 0 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00088 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 3 IT00085 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.1 Gate-to-Sourse Voltage, VGS -- V Source Current, IS -- A 7 VDD= --15V VGS= --4V 7 2 --0.1 SW Time -- ID 1000 VGS=0V 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02381 No.6648-4/7 3LP01SS Embossed Taping Specification 3LP01SS-TL-E, 3LP01SS-TL-H No.6648-5/7 3LP01SS Outline Drawing 3LP01SS-TL-E, 3LP01SS-TL-H Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No.6648-6/7 3LP01SS Note on usage : Since the 3LP01SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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